Yea Shin GBJ2504 25a glass passivated bridge rectifier Datasheet

DATA SHEET
GBJ25005 THRU GBJ2510
SEMICONDUCTOR
25A GLASS PASSIVATED
BRIDGE RECTIFIER
FEATURES
GBJ
•Glass Passivated Die Construction
•High Case Dielectric Strength of 1500VRMS
•Low Reverse Leakage Current
•Surge Overload Rating to 350A Peak
•Ideal for Printed Circuit Board Applications
•Plastic Material - UL Flammability
A
K
Classification 94V-0
•UL Listed Under Recognized Component
_
Index, File Number E94661
•High temperature soldering : 260OC / 10 seconds at terminals
J
•Pb free product at available : 99% Sn above meet RoHS
H
environment substance directive request
B
19.70
20.30
17.00
18.00
M
D
3.80
4.20
E
7.30
7.70
G
9.80
10.20
H
2.00
2.40
I
0.90
1.10
J
2.30
2.70
R
MECHANICAL DATA
G
•Case: Molded Plastic
E
30.30
C
P
I
Max
29.70
B
N
C
Min
A
L
S
D
Dim
E
•Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
•Polarity: Molded on Body
3.0 X 45°
K
L
4.40
4.80
M
3.40
3.80
N
3.10
3.40
P
2.50
2.90
R
0.60
0.80
S
10.80
11.20
All Dimensions in mm
•Mounting: Through Hole for #6 Screw
•Mounting Torque: 5.0 in-lbs Maximum
•Weight: 6.6 grams (approx)
•Marking: Type Number
Maximum Ratings and Electrical Characteristics@ TA = 25°C unless otherwise specified
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
Peak Repetitive Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
DC Blocking Voltage
VR
RMS Reverse Voltage
VR(RMS)
Average Forward Rectified Output Current
@ TC= 110℃
(Note 1)
GBJ
GBJ
GBJ
GBJ
GBJ
GBJ
GBJ
25005
2501
2502
2504
2506
2508
2510
50
100
200
400
600
800
1000
V
35
70
140
280
420
560
700
V
Unit
IO
25
A
IFSM
240
A
VFM
1.1
V
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
(JEDEC method)
Forward Voltage per element
@ IF =12.5A
Peak Reverse Current
@TC = 25℃
at Rated DC Blocking Voltage
@ TC = 125℃
10
IR
500
μA
I2t Rating for Fusing (t < 8.3ms) (Note 1)
I2t
510
Typical Junction Capacitance per Element (Note 2)
Cj
85
pF
R_JC
0.6
℃/W
Tj, TSTG
-65 to +150
℃
Typical Thermal Resistance, Junction to Case (Note 3)
Operating and Storage Temperature Range
A2s
Notes: 1. Non-repetitive, for t > 1ms and < 8.3 ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 220 x 220 x 1.6mm aluminum plate heat sink.
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DEVICE CHARACTERISTICS
GBJ25005 THRU GBJ2510
with heatsink
25
20
15
10
without heatsink
5
Resistive or
Inductive load
0
25
50
75
100
125
100
IF, INSTANTANEOUS FORWARD CURRENT (A)
IO, AVERAGE RECTIFIED CURRENT (A)
30
150
Tj = 25°C
10
1.0
0.1
Pulse width = 300µs
0.01
0
1.2
1.6
2.0
TJ = 25°C
f = 1MHz
Cj, JUNCTION CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
0.8
1000
Single half-sine-wave
(JEDEC method)
400
0.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics (per element)
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
Tj = 25°C
300
200
100
100
0
1
1
100
10
10
1.0
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Surge Current
IR, INSTANTANEOUS REVERSE CURRENT (µA)
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
1000
Tj = 150°C
Tj = 125°C
100
Tj = 100°C
10
1.0
Tj = 25°C
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
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