Freescale Semiconductor Technical Data Document Number: MRF6S9125 Rev. 1, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. N - CDMA Application • Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 950 mA, Pout = 27 Watt Avg., Full Frequency Band (865 - 895 MHz), IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 20.2 dB Drain Efficiency — 31% ACPR @ 750 kHz Offset = - 47.1 dBc @ 30 kHz Bandwidth GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 60 Watts Avg., Full Frequency Band (865 - 895 MHz or 921 - 960 MHz) Power Gain — 20 dB Drain Efficiency — 40% (Typ) Spectral Regrowth @ 400 kHz Offset = - 63 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM — 1.5% rms GSM Application • Typical GSM Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 125 Watts, Full Frequency Band (921 - 960 MHz) Power Gain — 19 dB Drain Efficiency — 62% • Capable of Handling 10:1 VSWR, @ 28 Vdc, @ P1dB Output Power, @ f = 880 MHz • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • N Suffix Indicates Lead - Free Terminations • 200°C Capable Plastic Package • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. 880 MHz, 27 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S9125NR1(MR1) CASE 1484 - 02, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6S9125NBR1(MBR1) Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +68 Vdc Gate - Source Voltage VGS - 0.5, +12 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 398 2.3 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Freescale Semiconductor, Inc., 2005. All rights reserved. RF Device Data Freescale Semiconductor MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 1 Table 2. Thermal Characteristics Characteristic Value(1,2) Symbol Thermal Resistance, Junction to Case Case Temperature 80°C, 125 W CW Case Temperature 76°C, 27 W CW RθJC Unit °C/W 0.44 0.45 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1B (Minimum) Machine Model (per EIA/JESD22 - A115) C (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 µAdc) VGS(th) 1 2.1 3 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 950 mAdc) VGS(Q) 2 2.89 4 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.74 Adc) VDS(on) 0.05 0.23 0.3 Vdc gfs — 6 — S Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 60 — pF Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2 — pF 24 dB Off Characteristics On Characteristics Forward Transconductance (VDS = 10 Vdc, ID = 8 Adc) Dynamic Characteristics (3) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W, f = 880 MHz Power Gain Gps 19 20.2 Drain Efficiency Adjacent Channel Power Ratio Input Return Loss ηD 29 31 — % ACPR — - 47.1 - 45 dBc IRL — - 16 -9 dB 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 3. Part is internally input matched. (continued) MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 οhm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 60 W Avg., 921 MHz<Frequency<960 MHz Power Gain Gps — 20 — dB Drain Efficiency ηD — 40 — % Error Vector Magnitude EVM — 1.5 — % rms Spectral Regrowth at 400 kHz Offset SR1 — - 63 — dBc Spectral Regrowth at 600 kHz Offset SR2 — - 78 — dBc Typical CW Performances (In Freescale GSM Test Fixture, 50 οhm system) VDD = 28 Vdc, IDQ = 700 mA, Pout = 125 W, 921 MHz<Frequency<960 MHz Power Gain Gps — 19 — dB Drain Efficiency ηD — 62 — % IRL — - 12 — dB P1dB — 125 — W Input Return Loss Pout @ 1 dB Compression Point, CW (f = 880 MHz) MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 RF Device Data Freescale Semiconductor 3 R1 VBIAS + C10 RF INPUT C9 C18 + + C8 C7 R2 C6 Z2 Z3 Z4 Z5 Z6 + + C20 C21 C22 L2 L1 Z1 C19 Z9 C4 Z7 Z10 Z11 C11 C12 Z12 Z13 Z14 Z15 Z16 C13 C14 C15 C16 Z8 C1 VSUPPLY + C23 RF Z17 OUTPUT C17 DUT C3 C2 Z1, Z17 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.200″ 1.060″ 0.382″ 0.108″ 0.200″ 0.028″ 0.236″ 0.050″ 0.238″ x 0.080″ x 0.080″ x 0.220″ x 0.220″ x 0.420″ x 0.620″ x 0.620″ x 0.620″ x 0.620″ C5 Microstrip Microstrip Microstrip Microstrip x 0.620″ Taper Microstrip Microstrip Microstrip Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 PCB 0.057″ x 0.620″ Microstrip 0.119″ x 0.620″ Microstrip 0.450″ x 0.220″ Microstrip 0.061″ x 0.220″ Microstrip 0.078″ x 0.220″ Microstrip 0.692″ x 0.080″ Microstrip 0.368″ x 0.080″ Microstrip Arlon GX - 0300 - 55 - 22, 0.030″, εr = 2.55 Figure 1. MRF6S9125NR1(NBR1)/MR1(MBR1) Test Circuit Schematic Table 6. MRF6S9125NR1(NBR1)/MR1(MBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 20 pF Chip Capacitor 600B200FT250XT ATC C2 6.2 pF Chip Capacitor 600B6R2BT250XT ATC C3, C15 0.8 - 8.0 pF Variable Capacitors, Gigatrim 27291SL Johanson C4, C5 11 pF Chip Capacitors 600B110FT250XT ATC C6, C18, C19 0.56 µF, 50 V Chip Capacitors C1825C564J5RAC Kemet C7, C8 47 µF, 16 V Tantalum Capacitors 593D476X9016D2T Vishay C9, C23 47 pF Chip Capacitors 700B470FW500XT ATC C10 100 µF, 50 V Electrolytic Capacitor 515D107M050BB6A Vishay C11, C12 12 pF Chip Capacitors 600B120FT250XT ATC C13, C14 5.1 pF Chip Capacitors 600B5R1BT250XT ATC C16 0.3 pF Chip Capacitor 700B0R3BW500XT ATC C17 39 pF Chip Capacitor 700B390FW500XT ATC C20, C21 22 µF, 35 V Tantalum Capacitors T491X226K035AS Kemet C22 470 µF, 63 V Electrolytic Capacitor SME63V471M12X25LL United Chemi - Con L1 7.15 nH Inductor 1606 - 7J CoilCraft L2 8.0 nH Inductor A03T CoilCraft R1 15 Ω, 1/4 W Chip Resistor (1210) Dale/Vishay R2 560 kΩ, 1/8 W Resistor (1206) Dale/Vishay MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 4 RF Device Data Freescale Semiconductor C20 C21 C8 C7 C22 C9 VGG C10 C6 R2 C4 R1 VDD C19 C23 C18 C11 C14 C1 C17 C2 C5 C3 CUT OUT AREA L2 L1 C13 C15 C16 C12 900 MHz TO272 WB Rev. 0 Figure 2. MRF6S9125NR1(NBR1)/MR1(MBR1) Test Circuit Component Layout MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 RF Device Data Freescale Semiconductor 5 32 Gps ηD 20 30 VDD = 28 Vdc, Pout = 27 W (Avg.) IDQ = 950 mA, N−CDMA IS−95 Pilot Sync, Paging, Traffic Codes 8 Through 13 19.8 19.5 28 −30 IRL 19.3 ACPR 19 18.8 −40 −50 −60 ALT1 −70 910 18.5 850 860 870 880 890 900 −5 −10 −15 −20 −25 IRL, INPUT RETURN LOSS (dB) Gps, POWER GAIN (dB) 20.3 ACPR (dBc), ALT1 (dBc) 34 20.5 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS f, FREQUENCY (MHz) 48 Gps, POWER GAIN (dB) 19.4 19.2 ηD 44 VDD = 28 Vdc, Pout = 62.5 W (Avg.) IDQ = 950 mA, N−CDMA IS−95 Pilot Sync, Paging, Traffic Codes 8 Through 13 19 18.8 40 −30 ACPR 18.6 IRL 18.4 −50 ALT1 18.2 18 850 860 870 880 −40 890 900 −60 −70 910 −5 −10 −15 −20 −25 IRL, INPUT RETURN LOSS (dB) 52 Gps ACPR (dBc), ALT1 (dBc) 19.6 ηD, DRAIN EFFICIENCY (%) Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 27 Watts Avg. f, FREQUENCY (MHz) Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 62.5 Watts Avg. 22 −10 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1475 mA Gps, POWER GAIN (dB) 21 1187 mA 20 950 mA 712 mA 19 475 mA 18 17 VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two −Tone Measurements, 100 MHz Tone Spacing VDD = 28 Vdc f1 = 880 MHz, f2 = 880.1 MHz Two −Tone Measurements, 100 MHz Tone Spacing −20 IDQ = 1425 mA −30 712 mA 475 mA −40 −50 1187 mA 950 mA −60 16 1 10 100 300 1 Figure 5. Two - Tone Power Gain versus Output Power 10 100 300 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 6 RF Device Data Freescale Semiconductor −10 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS VDD = 28 Vdc, IDQ = 950 mA f1 = 880 MHz, f2 = 880.1 MHz Two −Tone Measurements, Center Frequency = 880 MHz −20 −30 −40 3rd Order −50 5th Order −60 7th Order −70 1 10 100 −10 VDD = 28 Vdc, Pout = 125 W (PEP) IDQ = 950 mA, Two −Tone Measurements Center Frequency = 880 MHz −20 3rd Order −30 5th Order −40 −50 7th Order −60 300 0.1 1 10 Pout, OUTPUT POWER (WATTS) PEP TWO −TONE SPACING (MHz) Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Intermodulation Distortion Products versus Tone Spacing 100 56 Pout, OUTPUT POWER (dBm) Ideal P3dB = 52.4 dBm (172.5 W) 55 54 P1dB = 51.5 dBm (139.3 W) 53 52 Actual 51 50 VDD = 28 Vdc, IDQ = 950 mA Pulsed CW, 8 µsec(on), 1 msec(off) Center Frequency = 880 MHz 49 48 28 29 30 31 32 33 34 35 36 Pin, INPUT POWER (dBm) 50 VDD = 28 Vdc, IDQ = 950 mA f = 880 MHz, N−CDMA IS−95 (Pilot 40 Sync, Paging, Traffic Codes 8 Through 13) −30 TC = −30_C 25_C ηD ALT1 30 −50 −30_C 25_C 85_C Gps 20 25_C −30_C −70 85_C 0 0.1 1 −60 ACPR 25_C 10 −40 85_C 10 100 −80 200 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1, CHANNEL POWER (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) Figure 9. Pulse CW Output Power versus Input Power Pout, OUTPUT POWER (WATTS) AVG. Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS 22 TC = −30_C 50 25_C 40 85_C 19 ηD 18 30 Gps 17 25_C 16 VDD = 28 Vdc IDQ = 950 mA f = 880 MHz 85_C 15 1 10 100 20 20 Gps, POWER GAIN (dB) 20 60 ηD, DRAIN EFFICIENCY (%) 21 Gps, POWER GAIN (dB) 21 70 −30_C 19 32 V 18 28 V 24 V 17 16 V 10 0 200 20 V IDQ = 950 mA f = 880 MHz VDD = 12 V 16 0 50 100 150 200 Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain and Drain Efficiency versus CW Output Power Figure 12. Power Gain versus Output Power 250 MTTF FACTOR (HOURS X AMPS2) 109 108 107 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 13. MTTF Factor versus Junction Temperature MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 8 RF Device Data Freescale Semiconductor N - CDMA TEST SIGNAL 100 −10 1.2288 MHz Channel BW −20 −30 1 −40 −50 0.1 (dB) PROBABILITY (%) 10 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 −60 −70 −80 −ACPR @ 30 kHz Integrated BW −90 0.0001 0 2 4 6 8 10 +ACPR @ 30 kHz Integrated BW −100 PEAK −TO−AVERAGE (dB) Figure 14. Single - Carrier CCDF N - CDMA −110 −3.6 −2.9 −2.2 −1.5 −0.7 0 0.7 1.5 2.2 2.9 3.6 f, FREQUENCY (MHz) Figure 15. Single - Carrier N - CDMA Spectrum MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 RF Device Data Freescale Semiconductor 9 f = 900 MHz Zload f = 860 MHz Zo = 5 Ω Zsource f = 900 MHz f = 860 MHz VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg. f MHz Zsource Ω Zload Ω 860 0.62 - j2.13 1.48 - j0.14 865 0.64 - j2.31 1.56 - j0.09 870 0.62 - j2.45 1.66 - j0.02 875 0.59 - j2.43 1.73 + j0.04 880 0.57 - j2.42 1.74 + j0.11 885 0.54 - j2.36 1.68 + j0.19 890 0.57 - j2.18 1.61 + j0.25 895 0.58 - j1.94 1.52 + j0.33 900 0.59 - j1.86 1.48 + j0.37 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 16. Series Equivalent Source and Load Impedance MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 10 RF Device Data Freescale Semiconductor NOTES MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 RF Device Data Freescale Semiconductor 11 NOTES MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 12 RF Device Data Freescale Semiconductor NOTES MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 RF Device Data Freescale Semiconductor 13 PACKAGE DIMENSIONS E1 B A 2X E3 GATE LEAD DRAIN LEAD D D1 4X e 4X b1 aaa M C A 2X 2X D2 c1 E H DATUM PLANE F ZONE J A A1 2X A2 E2 NOTE 7 E5 E4 4 D3 3 ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ E5 BOTTOM VIEW C SEATING PLANE PIN 5 NOTE 8 1 2 CASE 1486 - 03 ISSUE C TO - 270 WB - 4 PLASTIC MRF6S9125NR1(MR1) NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DATUM PLANE −H− IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO INCLUDE MOLD MISMATCH AND ARE DETER− MINED AT DATUM PLANE −H−. 5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE “b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. 7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 e aaa INCHES MIN MAX .100 .104 .039 .043 .040 .042 .712 .720 .688 .692 .011 .019 .600 −−− .551 .559 .353 .357 .132 .140 .124 .132 .270 −−− .346 .350 .025 BSC .164 .170 .007 .011 .106 BSC .004 STYLE 1: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 18.08 18.29 17.48 17.58 0.28 0.48 15.24 −−− 14 14.2 8.97 9.07 3.35 3.56 3.15 3.35 6.86 −−− 8.79 8.89 0.64 BSC 4.17 4.32 0.18 0.28 2.69 BSC 0.10 DRAIN DRAIN GATE GATE SOURCE MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 14 RF Device Data Freescale Semiconductor E1 r1 aaa M C A B 2X A B GATE LEAD E2 ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ DRAIN LEAD 3 D D2 D1 4X e 4 b1 aaa M C A 4X H ZONE J A A1 A2 7 Y E3 1 2 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE −H−. 5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE "b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. 7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. F DATUM PLANE NOTE 8 E3 VIEW Y - Y E c1 PIN 5 Y C SEATING PLANE STYLE 1: PIN 1. 2. 3. 4. 5. DRAIN DRAIN GATE GATE SOURCE CASE 1484 - 02 ISSUE B TO - 272 WB - 4 PLASTIC MRF6S9125NBR1(MBR1) DIM A A1 A2 D D1 D2 E E1 E2 E3 F b1 c1 r1 e aaa INCHES MIN MAX .100 .104 .039 .043 .040 .042 .928 .932 .810 BSC .600 −−− .551 .559 .353 .357 .270 −−− .346 .350 .025 BSC .164 .170 .007 .011 .063 .068 .106 BSC .004 MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 23.57 23.67 20.57 BSC 15.24 −−− 14 14.2 8.97 9.07 6.86 −−− 8.79 8.89 0.64 BSC 4.17 4.32 .18 .28 1.60 1.73 2.69 BSC .10 MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com RoHS-compliant and/or Pb- free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2005. All rights reserved. MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 Document Number: MRF6S9125 Rev. 1, 7/2005 16 RF Device Data Freescale Semiconductor