Freescale MRF6S9125NBR1 Rf power field effect transistor Datasheet

Freescale Semiconductor
Technical Data
Document Number: MRF6S9125
Rev. 1, 7/2005
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF6S9125NR1
MRF6S9125NBR1
MRF6S9125MR1
MRF6S9125MBR1
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
N - CDMA Application
• Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ =
950 mA, Pout = 27 Watt Avg., Full Frequency Band (865 - 895 MHz), IS - 95
CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel
Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 20.2 dB
Drain Efficiency — 31%
ACPR @ 750 kHz Offset = - 47.1 dBc @ 30 kHz Bandwidth
GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA,
Pout = 60 Watts Avg., Full Frequency Band (865 - 895 MHz or
921 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 40% (Typ)
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.5% rms
GSM Application
• Typical GSM Performance: VDD = 28 Volts, IDQ = 700 mA, Pout =
125 Watts, Full Frequency Band (921 - 960 MHz)
Power Gain — 19 dB
Drain Efficiency — 62%
• Capable of Handling 10:1 VSWR, @ 28 Vdc, @ P1dB Output Power,
@ f = 880 MHz
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• N Suffix Indicates Lead - Free Terminations
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
880 MHz, 27 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6S9125NR1(MR1)
CASE 1484 - 02, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6S9125NBR1(MBR1)
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +68
Vdc
Gate - Source Voltage
VGS
- 0.5, +12
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
398
2.3
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
 Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
1
Table 2. Thermal Characteristics
Characteristic
Value(1,2)
Symbol
Thermal Resistance, Junction to Case
Case Temperature 80°C, 125 W CW
Case Temperature 76°C, 27 W CW
RθJC
Unit
°C/W
0.44
0.45
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
C (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
µAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 µAdc)
VGS(th)
1
2.1
3
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 950 mAdc)
VGS(Q)
2
2.89
4
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2.74 Adc)
VDS(on)
0.05
0.23
0.3
Vdc
gfs
—
6
—
S
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
60
—
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
2
—
pF
24
dB
Off Characteristics
On Characteristics
Forward Transconductance
(VDS = 10 Vdc, ID = 8 Adc)
Dynamic Characteristics (3)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W, f = 880 MHz
Power Gain
Gps
19
20.2
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
ηD
29
31
—
%
ACPR
—
- 47.1
- 45
dBc
IRL
—
- 16
-9
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
3. Part is internally input matched.
(continued)
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 οhm system) VDD = 28 Vdc, IDQ = 950 mA,
Pout = 60 W Avg., 921 MHz<Frequency<960 MHz
Power Gain
Gps
—
20
—
dB
Drain Efficiency
ηD
—
40
—
%
Error Vector Magnitude
EVM
—
1.5
—
% rms
Spectral Regrowth at 400 kHz Offset
SR1
—
- 63
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
- 78
—
dBc
Typical CW Performances (In Freescale GSM Test Fixture, 50 οhm system) VDD = 28 Vdc, IDQ = 700 mA, Pout = 125 W,
921 MHz<Frequency<960 MHz
Power Gain
Gps
—
19
—
dB
Drain Efficiency
ηD
—
62
—
%
IRL
—
- 12
—
dB
P1dB
—
125
—
W
Input Return Loss
Pout @ 1 dB Compression Point, CW
(f = 880 MHz)
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
RF Device Data
Freescale Semiconductor
3
R1
VBIAS
+
C10
RF
INPUT
C9
C18
+
+
C8
C7
R2
C6
Z2
Z3
Z4
Z5
Z6
+
+
C20
C21
C22
L2
L1
Z1
C19
Z9
C4
Z7
Z10
Z11
C11
C12
Z12
Z13
Z14
Z15
Z16
C13
C14
C15
C16
Z8
C1
VSUPPLY
+
C23
RF
Z17 OUTPUT
C17
DUT
C3
C2
Z1, Z17
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.200″
1.060″
0.382″
0.108″
0.200″
0.028″
0.236″
0.050″
0.238″
x 0.080″
x 0.080″
x 0.220″
x 0.220″
x 0.420″
x 0.620″
x 0.620″
x 0.620″
x 0.620″
C5
Microstrip
Microstrip
Microstrip
Microstrip
x 0.620″ Taper
Microstrip
Microstrip
Microstrip
Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
PCB
0.057″ x 0.620″ Microstrip
0.119″ x 0.620″ Microstrip
0.450″ x 0.220″ Microstrip
0.061″ x 0.220″ Microstrip
0.078″ x 0.220″ Microstrip
0.692″ x 0.080″ Microstrip
0.368″ x 0.080″ Microstrip
Arlon GX - 0300 - 55 - 22, 0.030″, εr = 2.55
Figure 1. MRF6S9125NR1(NBR1)/MR1(MBR1) Test Circuit Schematic
Table 6. MRF6S9125NR1(NBR1)/MR1(MBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
20 pF Chip Capacitor
600B200FT250XT
ATC
C2
6.2 pF Chip Capacitor
600B6R2BT250XT
ATC
C3, C15
0.8 - 8.0 pF Variable Capacitors, Gigatrim
27291SL
Johanson
C4, C5
11 pF Chip Capacitors
600B110FT250XT
ATC
C6, C18, C19
0.56 µF, 50 V Chip Capacitors
C1825C564J5RAC
Kemet
C7, C8
47 µF, 16 V Tantalum Capacitors
593D476X9016D2T
Vishay
C9, C23
47 pF Chip Capacitors
700B470FW500XT
ATC
C10
100 µF, 50 V Electrolytic Capacitor
515D107M050BB6A
Vishay
C11, C12
12 pF Chip Capacitors
600B120FT250XT
ATC
C13, C14
5.1 pF Chip Capacitors
600B5R1BT250XT
ATC
C16
0.3 pF Chip Capacitor
700B0R3BW500XT
ATC
C17
39 pF Chip Capacitor
700B390FW500XT
ATC
C20, C21
22 µF, 35 V Tantalum Capacitors
T491X226K035AS
Kemet
C22
470 µF, 63 V Electrolytic Capacitor
SME63V471M12X25LL
United Chemi - Con
L1
7.15 nH Inductor
1606 - 7J
CoilCraft
L2
8.0 nH Inductor
A03T
CoilCraft
R1
15 Ω, 1/4 W Chip Resistor (1210)
Dale/Vishay
R2
560 kΩ, 1/8 W Resistor (1206)
Dale/Vishay
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
4
RF Device Data
Freescale Semiconductor
C20 C21
C8 C7
C22
C9
VGG
C10
C6
R2
C4
R1
VDD
C19
C23
C18
C11
C14
C1
C17
C2
C5
C3
CUT OUT AREA
L2
L1
C13
C15
C16
C12
900 MHz
TO272 WB
Rev. 0
Figure 2. MRF6S9125NR1(NBR1)/MR1(MBR1) Test Circuit Component Layout
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
RF Device Data
Freescale Semiconductor
5
32
Gps
ηD
20
30
VDD = 28 Vdc, Pout = 27 W (Avg.)
IDQ = 950 mA, N−CDMA IS−95 Pilot
Sync, Paging, Traffic Codes 8 Through 13
19.8
19.5
28
−30
IRL
19.3
ACPR
19
18.8
−40
−50
−60
ALT1
−70
910
18.5
850
860
870
880
890
900
−5
−10
−15
−20
−25
IRL, INPUT RETURN LOSS (dB)
Gps, POWER GAIN (dB)
20.3
ACPR (dBc), ALT1 (dBc)
34
20.5
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
48
Gps, POWER GAIN (dB)
19.4
19.2
ηD
44
VDD = 28 Vdc, Pout = 62.5 W (Avg.)
IDQ = 950 mA, N−CDMA IS−95 Pilot
Sync, Paging, Traffic Codes 8 Through 13
19
18.8
40
−30
ACPR
18.6
IRL
18.4
−50
ALT1
18.2
18
850
860
870
880
−40
890
900
−60
−70
910
−5
−10
−15
−20
−25
IRL, INPUT RETURN LOSS (dB)
52
Gps
ACPR (dBc), ALT1 (dBc)
19.6
ηD, DRAIN
EFFICIENCY (%)
Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 27 Watts Avg.
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 62.5 Watts Avg.
22
−10
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
IDQ = 1475 mA
Gps, POWER GAIN (dB)
21
1187 mA
20
950 mA
712 mA
19
475 mA
18
17
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two −Tone Measurements, 100 MHz Tone Spacing
VDD = 28 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
Two −Tone Measurements, 100 MHz Tone Spacing
−20
IDQ = 1425 mA
−30
712 mA
475 mA
−40
−50
1187 mA
950 mA
−60
16
1
10
100
300
1
Figure 5. Two - Tone Power Gain versus
Output Power
10
100
300
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
6
RF Device Data
Freescale Semiconductor
−10
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 950 mA
f1 = 880 MHz, f2 = 880.1 MHz
Two −Tone Measurements, Center Frequency = 880 MHz
−20
−30
−40
3rd Order
−50
5th Order
−60
7th Order
−70
1
10
100
−10
VDD = 28 Vdc, Pout = 125 W (PEP)
IDQ = 950 mA, Two −Tone Measurements
Center Frequency = 880 MHz
−20
3rd Order
−30
5th Order
−40
−50
7th Order
−60
300
0.1
1
10
Pout, OUTPUT POWER (WATTS) PEP
TWO −TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
100
56
Pout, OUTPUT POWER (dBm)
Ideal
P3dB = 52.4 dBm (172.5 W)
55
54
P1dB = 51.5 dBm (139.3 W)
53
52
Actual
51
50
VDD = 28 Vdc, IDQ = 950 mA
Pulsed CW, 8 µsec(on), 1 msec(off)
Center Frequency = 880 MHz
49
48
28
29
30
31
32
33
34
35
36
Pin, INPUT POWER (dBm)
50
VDD = 28 Vdc, IDQ = 950 mA
f = 880 MHz, N−CDMA IS−95 (Pilot
40 Sync, Paging, Traffic Codes 8
Through 13)
−30
TC = −30_C
25_C
ηD
ALT1
30
−50
−30_C
25_C
85_C
Gps
20
25_C
−30_C
−70
85_C
0
0.1
1
−60
ACPR
25_C
10
−40
85_C
10
100
−80
200
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ALT1, CHANNEL POWER (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
Figure 9. Pulse CW Output Power versus
Input Power
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
22
TC = −30_C
50
25_C
40
85_C
19
ηD
18
30
Gps
17
25_C
16
VDD = 28 Vdc
IDQ = 950 mA
f = 880 MHz
85_C
15
1
10
100
20
20
Gps, POWER GAIN (dB)
20
60
ηD, DRAIN EFFICIENCY (%)
21
Gps, POWER GAIN (dB)
21
70
−30_C
19
32 V
18
28 V
24 V
17
16 V
10
0
200
20 V
IDQ = 950 mA
f = 880 MHz
VDD = 12 V
16
0
50
100
150
200
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
Figure 12. Power Gain versus Output Power
250
MTTF FACTOR (HOURS X AMPS2)
109
108
107
90 100 110 120 130 140 150 160 170 180 190 200 210
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 13. MTTF Factor versus Junction Temperature
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
8
RF Device Data
Freescale Semiconductor
N - CDMA TEST SIGNAL
100
−10
1.2288 MHz
Channel BW
−20
−30
1
−40
−50
0.1
(dB)
PROBABILITY (%)
10
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±750 kHz Offset. PAR = 9.8 dB @ 0.01%
Probability on CCDF.
0.01
0.001
−60
−70
−80
−ACPR @ 30 kHz
Integrated BW
−90
0.0001
0
2
4
6
8
10
+ACPR @ 30 kHz
Integrated BW
−100
PEAK −TO−AVERAGE (dB)
Figure 14. Single - Carrier CCDF N - CDMA
−110
−3.6 −2.9 −2.2
−1.5
−0.7
0
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
Figure 15. Single - Carrier N - CDMA Spectrum
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
RF Device Data
Freescale Semiconductor
9
f = 900 MHz
Zload
f = 860 MHz
Zo = 5 Ω
Zsource
f = 900 MHz
f = 860 MHz
VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
860
0.62 - j2.13
1.48 - j0.14
865
0.64 - j2.31
1.56 - j0.09
870
0.62 - j2.45
1.66 - j0.02
875
0.59 - j2.43
1.73 + j0.04
880
0.57 - j2.42
1.74 + j0.11
885
0.54 - j2.36
1.68 + j0.19
890
0.57 - j2.18
1.61 + j0.25
895
0.58 - j1.94
1.52 + j0.33
900
0.59 - j1.86
1.48 + j0.37
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
10
RF Device Data
Freescale Semiconductor
NOTES
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
RF Device Data
Freescale Semiconductor
11
NOTES
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
12
RF Device Data
Freescale Semiconductor
NOTES
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
RF Device Data
Freescale Semiconductor
13
PACKAGE DIMENSIONS
E1
B
A
2X
E3
GATE LEAD
DRAIN LEAD
D
D1
4X
e
4X
b1
aaa M C A
2X
2X
D2
c1
E
H
DATUM
PLANE
F
ZONE J
A
A1
2X
A2
E2
NOTE 7
E5
E4
4
D3
3
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
E5
BOTTOM VIEW
C
SEATING
PLANE
PIN 5
NOTE 8
1
2
CASE 1486 - 03
ISSUE C
TO - 270 WB - 4
PLASTIC
MRF6S9125NR1(MR1)
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −H−.
5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE “b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA
OF THE HEAT SLUG.
DIM
A
A1
A2
D
D1
D2
D3
E
E1
E2
E3
E4
E5
F
b1
c1
e
aaa
INCHES
MIN
MAX
.100
.104
.039
.043
.040
.042
.712
.720
.688
.692
.011
.019
.600
−−−
.551
.559
.353
.357
.132
.140
.124
.132
.270
−−−
.346
.350
.025 BSC
.164
.170
.007
.011
.106 BSC
.004
STYLE 1:
PIN 1.
2.
3.
4.
5.
MILLIMETERS
MIN
MAX
2.54
2.64
0.99
1.09
1.02
1.07
18.08
18.29
17.48
17.58
0.28
0.48
15.24
−−−
14
14.2
8.97
9.07
3.35
3.56
3.15
3.35
6.86
−−−
8.79
8.89
0.64 BSC
4.17
4.32
0.18
0.28
2.69 BSC
0.10
DRAIN
DRAIN
GATE
GATE
SOURCE
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
14
RF Device Data
Freescale Semiconductor
E1
r1
aaa M C A B
2X
A
B
GATE LEAD
E2
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
DRAIN LEAD
3
D D2
D1
4X
e
4
b1
aaa M C A
4X
H
ZONE J
A
A1
A2
7
Y
E3
1
2
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES PER
ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE THE
LEAD EXITS THE PLASTIC BODY AT THE TOP OF
THE PARTING LINE.
4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE "b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA OF
THE HEAT SLUG.
F
DATUM
PLANE
NOTE 8
E3
VIEW Y - Y
E
c1
PIN 5
Y
C
SEATING
PLANE
STYLE 1:
PIN 1.
2.
3.
4.
5.
DRAIN
DRAIN
GATE
GATE
SOURCE
CASE 1484 - 02
ISSUE B
TO - 272 WB - 4
PLASTIC
MRF6S9125NBR1(MBR1)
DIM
A
A1
A2
D
D1
D2
E
E1
E2
E3
F
b1
c1
r1
e
aaa
INCHES
MIN
MAX
.100
.104
.039
.043
.040
.042
.928
.932
.810 BSC
.600
−−−
.551
.559
.353
.357
.270
−−−
.346
.350
.025 BSC
.164
.170
.007
.011
.063
.068
.106 BSC
.004
MILLIMETERS
MIN
MAX
2.54
2.64
0.99
1.09
1.02
1.07
23.57
23.67
20.57 BSC
15.24
−−−
14
14.2
8.97
9.07
6.86
−−−
8.79
8.89
0.64 BSC
4.17
4.32
.18
.28
1.60
1.73
2.69 BSC
.10
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
RF Device Data
Freescale Semiconductor
15
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MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
Document Number: MRF6S9125
Rev. 1, 7/2005
16
RF Device Data
Freescale Semiconductor
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