GP1S196HCZ0F/GP1S196HCZSF GP1S196HCZ0F GP1S196HCZSF Gap : 1.1mm, Slit : 0.3mm Phototransistor Output, Compact Transmissive Photointerrupter ■ Description ■ Agency approvals/Compliance GP1S196HCZ0F is a compact-package, photo-transistor output, transmissive photointerrupter, with opposing emitter and detector in a molding that provides noncontact sensing. The compact package series is a result of unique technology combing transfer and injection molding. This device is half the size of the rest of the parts in this family. 1. Compliant with RoHS directive ■ Applications 1. General purpose detection of object presence or motion. 2. Example : printer, lens control for camera ■ Features 1. Transmissive with phototransistor output 2. Highlights : • Compact Size • Low Profile • Narrow Gap • Through-hole : GP1S196HCZ0F • SMT : GP1S196HCZSF 3. Key Parameters : • Gap Width : 1.1mm • Slit Width (detector side): 0.3mm • Package : 3.1×2×2.7mm 4. Lead free and RoHS directive compliant Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D3-A01001EN Date Jun. 30. 2005 © SHARP Corporation GP1S196HCZ0F/GP1S196HCZSF ■ Internal Connection Diagram Top view 2 1 Anode Collector Emitter Cathode 1 2 3 4 3 4 ■ Outline Dimensions (Unit : mm) Through-Hole [GP1S196HCZ0F] 0. 2) (R 2.7 3 (2.15) 2 ∗1.3 4 1 ∗2−1.85 Same potential as • Unspecified tolerance : ±0.1mm. • Dimensions in parenthesis are shown for reference. • The dimensions indicated by ∗ refer to those measured from the lead base. • The dimensions shown do not include those of burrs. Burr's dimensions : 0.15mm MAX. • The lead may be exposed at the painting out portion. • There is agreer identification mark on he light emitting side. ∗4−0.3 Same potential as 1 (1.05) 3 (0.3) Slit width (1.2) 2.1 ∗0.1 2−(0.85) 1 Same potential as 2−(1.5) 2−(1.75) 4− (1.2) 2−1.5±0.3 2−1.7±0.3 4 2 (0.04) 2.7 2−(1.5) 2−(1.75) 2.1 2−(0.85) 2−(0.2) Same potential as 1 (1.05) Identification mark (0.75) Center of light path ∗3.2±0.2 n tio si po ∗1.3 e (2.15) 4−0.3 at 1.1 4 0. n tio si po 4−0.15 3 (0.3) Slit width a-aʼ section G e 4 0. Identification mark (0.75) Center of light path ∗2 2−(1.62) 3.1 at 1.1 a' G 3.1 a-aʼ section 2−(0.2) (R 0. 2) 2−(1.62) 4− a' 2 a 2 a 2−(0.3) 2−(0.7) Top view 2−(0.3) 2−(0.7) Top view SMT Gullwing Lead-Form [GP1S196HCZ0F] 3 • Unspecified tolerance : ±0.1mm. • Dimensions in parenthesis are shown for reference. • The dimensions indicated by ∗ refer to those measured lead plating portion. • The dimensions shown do not include those of burrs. Burr's dimensions : 0.15mm MAX. • The lead may be exposed at the painting out portion. • There is agreer identification mark on he light emitting side. Product mass : approx. 0.022g Product mass : approx. 0.02g Plating material : SnCu (Cu : TYP. 2%) Country of origin Japan Sheet No.: D3-A01001EN 2 GP1S196HCZ0F/GP1S196HCZSF ■ Absolute Maximum Ratings Parameter Forward current Input Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Output Collector current Collector power dissipation Total power dissipation Operating temperature Storage temperature ∗1 Soldering temperature ∗ Symbol Rating IF 30 VR 6 P 75 VCEO 35 VECO 6 IC 20 75 PC 100 Ptot Topr −25 to +85 Tstg −40 to +100 Tsol 260 (Ta=25˚C ) Unit mA V mW V V mA mW mW ˚C ˚C ˚C 0.3mm or more Soldering area (GP1S196HCZ0F) 1 For 3s or less ■ Electro-optical Characteristics Parameter Forward voltage Input Reverse current Output Collector dark current Collector current Transfer Collector-emitter saturation voltage characRise time teristics Response time Fall time Symbol VF IR ICEO IC VCE(sat) tr tf Condition IF=20mA VR=3V VCE=20V VCE=5V, IF=5mA IF=10mA, IC=40μA VCE=5V, IC=100μA, RL=1kΩ MIN. − − − 100 − − − TYP. 1.2 − − − − 50 50 (Ta=25˚C ) MAX. Unit 1.4 V 10 μA 100 nA 400 μA 0.4 V 150 μs 150 Sheet No.: D3-A01001EN 3 GP1S196HCZ0F/GP1S196HCZSF Fig.2 Power Dissipation vs. Ambient Temperature 60 120 50 100 Power dissipation P, Pc, Ptot (mW) Forward current IF (mA) Fig.1 Forward Current vs. Ambient Temperature 40 30 20 10 80 75 0 25 50 75 85 P,Pc 60 40 20 15 0 25 Ptot 0 −25 100 0 Ambient temperature Ta (˚C) 25 50 75 85 100 Ambient temperature Ta (˚C) Fig.4 Collector Current vs. Forward Current Fig.3 Forward Current vs. Forward Voltage 1.1 100 VCE=5V Ta=25˚C 1 Collector current IC (mA) Forward current IF (mA) 0.9 Ta=85˚C 65˚C 10 45˚C 25˚C 0˚C 0.8 0.7 0.6 0.5 0.4 0.3 0.2 −25˚C 0.1 0 1 0 0.5 1 1.5 0 2 2 4 Forward voltage VF (V) Fig.5 Collector Current vs. Collectoremitter Voltage 8 Ta25˚C IF30mA 110 Relative collector current (%) 1.6 20mA 0.8 10mA 0.4 5mA 2 4 6 14 16 18 20 8 100 90 80 70 60 50 40 30 20 10 0 −25 0 0 12 IF=5mA VCE=5V IC=100% at Ta=25˚C 120 1.2 10 Fig.6 Relative Collector Current vs. Ambient Temperature 130 2 Collector current IC (mA) 6 Forward current IF (mA) 10 0 25 50 75 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Sheet No.: D3-A01001EN 4 GP1S196HCZ0F/GP1S196HCZSF 0.2 Fig.8 Collector Dark Current vs. Ambient Temperature IF=10mA IC=40μA 0.18 Collector dark current ICEO (A) Collector-emitter saturation voltage VCE (sat) (V) Fig.7 Collector-emitter Saturation Votage vs. Ambient Temperature 0.16 0.14 0.12 0.1 0.08 10 6 10 7 10 8 10 9 VCE20V 0.06 0.04 −25 0 25 50 10 75 10 0 25 Ambient temperature Ta (˚C) Fig.9 Response Time vs. Load Resistance 100 Fig.10 Test Circuit for Response Time VCE=5V IC=100μA Ta=25˚C VCC RL RD Output Input Output Input tr 100 tf 10% ts tf td tr td 10 1 0.1 90% ts 100 1 10 Load resistance RL (kΩ) Fig.11 Relative Collector Current vs. Shield Distance (1) Fig.12 Relative Collector Current vs. Shield Distance (1) 100 100 0 90 L 90 80 Relative collector current (%) Relative collector current (%) 75 70 60 50 40 30 20 IF=5mA VCE=5V 10 0 0 L 0 Response time (μs) 1 000 50 Ambient temperature Ta (˚C) 80 70 60 50 40 30 20 IF=5mA VCE=5V 10 0 0.5 1 1.5 0 2 0.5 1 1.5 2 Shield moving distance L (mm) Shield moving distance L (mm) Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D3-A01001EN 5 GP1S196HCZ0F/GP1S196HCZSF ■ Design Considerations ● Design guide 1) Prevention of detection error To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to the external light. 2) Position of opaque board Opaque board shall be installed at place 1.4mm or more from the top of elements. (Example) 1.4mm or more 1.4mm or more This product is not designed against irradiation and incorporates non-coherent IRED. ● Degradation In general, the emission of the IRED used in photointerrupter will degrade over time. In the case of long term operation, please take the general IRED degradation (50% degradation over 5 years) into the design consideration. ● Recommended Foot Print (Only for GP1S196HCZSF) 3.7 0.7 1.3 0.6 1.65 Sheet No.: D3-A01001EN 6 GP1S196HCZ0F/GP1S196HCZSF ● Parts This product is assembled using the below parts. • Photodetector (qty. : 1) Category Material Maximum Sensitivity wavelength (nm) Sensitivity wavelength (nm) Response time (μs) Phototransistor Silicon (Si) 930 700 to 1 200 20 • Photo emitter (qty. : 1) Category Material Maximum light emitting wavelength (nm) I/O Frequency (MHz) Infrared emitting diode (non-coherent) Gallium arsenide (GaAs) 950 0.3 • Material Case Lead frame Lead frame plating Black polyphernylene sulfide resin (UL94 V-0) 42Alloy SnCu plating Sheet No.: D3-A01001EN 7 GP1S196HCZ0F/GP1S196HCZSF ■ Manufacturing Guidelines ● Storage and management after open (Only for GP1S196HCZSF) Storage condition Storage temp.: 5 to 30˚C, Storage humidity : 70%RH or less at regular packaging. Treatment after opening the moisture-proof package After opening, you should mount the products while keeping them on the condition of 5 to 25˚C and 70%RH or less in humidity within 4 days. After opening the bag once even if the prolonged storage is necessary, you should mount the products within two weeks. And when you store the rest of products you should put into a DRY BOX. Otherwise after the rest of products and silicagel are sealed up again, you should keep them under the condition of 5 to 30˚C and 70%RH or less in humidity. Baking before mounting When the above-mentioned storage method could not be executed, please process the baking treatment before mounting the products. However the baking treatment is permitted within one time. Recommended condition : 125˚C, 16 to 24 hours ∗Do not process the baking treatment with the product wrapped. When the baking treatment processing, you should move the products to a metallic tray or fix temporarily the products to substrate. ● Soldering Method Reflow Soldering (Only for GP1S196HCZSF) : Reflow soldering should follow the temperature profile shown below. Soldering should not exceed the curve of temperature profile and time. Please solder within one time. MAX 240˚C 1 to 4˚C/s 200˚C MAX 160˚C 1 to 4˚C/s 1 to 4˚C/s 25˚C MAX10s MAX120s MAX60s MAX90s Sheet No.: D3-A01001EN 8 GP1S196HCZ0F/GP1S196HCZSF Flow Soldering: Soldering should be completed below 260˚C and within 3 s. Please solder within one time. Soldering area is 0.3mm or more away from the bottom of housing. Please take care not to let any external force exert on lead pins. Please don't do soldering with preheating, and please don't do soldering by reflow. Other notice Please test the soldering method in actual condition and make sure the soldering works fine, since the impact on the junction between the device and PCB varies depending on the cooling and soldering conditions. ● Cleaning instructions Solvent cleaning : Solvent temperature should be 45˚C or below. Immersion time should be 3 minutes or less. Ultrasonic cleaning : Do not execute ultrasonic cleaning. Recommended solvent materials : Ethyl alcohol, Methyl alcohol and Isopropyl alcohol. ● Presence of ODC This product shall not contain the following materials. And they are not used in the production process for this product. Regulation substances : CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform) Specific brominated flame retardants such as the PBBOs and PBBs are not used in this product at all. This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC). •Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated diphenyl ethers (PBDE). Sheet No.: D3-A01001EN 9 GP1S196HCZ0F/GP1S196HCZSF ■ Package specification ● Sleeve package 1. Through-hole (GP1S196HCZ0F) Package materials Sleeve : Polycarbonate Stopper : Styrene-Elastomer Package method MAX. 200 pcs. of products shall be packaged in a sleeve. Both ends shall be closed by tabbed and tabless stoppers. MAX. 50 sleeves in one case. 2. SMT Gullwing (GP1S196HCZSF) Package materials Sleeve : Polycarbonate Stopper : Styrene-Elastomer Aluminium laminated Bag : Nylon, Polyphernylene, Aluminium Package method MAX. 200 pcs. of products shall be packaged in a sleeve. Both ends shall be closed by tabbed and tabless stoppers. MAX. 50 sleeves with silicagel are enclosed in aluminium laminated bag. After sealing up the bag, it encased in one case. Sheet No.: D3-A01001EN 10 GP1S196HCZ0F/GP1S196HCZSF ■ Important Notices · The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of SHARP's devices. with equipment that requires higher reliability such as: --- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.) --- Traffic signals --- Gas leakage sensor breakers --- Alarm equipment --- Various safety devices, etc. (iii) SHARP devices shall not be used for or in connection with equipment that requires an extremely high level of reliability and safety such as: --- Space applications --- Telecommunication equipment [trunk lines] --- Nuclear power control equipment --- Medical and other life support equipment (e.g., scuba). · Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. SHARP reserves the right to make changes in the specifications, characteristics, data, materials, structure, and other contents described herein at any time without notice in order to improve design or reliability. Manufacturing locations are also subject to change without notice. · If the SHARP devices listed in this publication fall within the scope of strategic products described in the Foreign Exchange and Foreign Trade Law of Japan, it is necessary to obtain approval to export such SHARP devices. · Observe the following points when using any devices in this publication. SHARP takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used specified in the relevant specification sheet nor meet the following conditions: (i) The devices in this publication are designed for use in general electronic equipment designs such as: --- Personal computers --- Office automation equipment --- Telecommunication equipment [terminal] --- Test and measurement equipment --- Industrial control --- Audio visual equipment --- Consumer electronics (ii) Measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when SHARP devices are used for or in connection · This publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, in whole or in part, without the express written permission of SHARP. Express written permission is also required before any use of this publication may be made by a third party. · Contact and consult with a SHARP representative if there are any questions about the contents of this publication. Sheet No.: D3-A01001EN [H135] 11