, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BF470; BF472 PNP high-voltage transistors FEATURES • Low feedback capacitance. APPLICATIONS • Class-B video output stages in television receivers and for high-voltage IF output stages. DESCRIPTION PNP transistors in a TO-126; SOT32 plastic package. NPN complements: BF469 and BF471. Top view PINNING DESCRIPTION PIN 1 emitter 2 collector, connected to mounting base 3 base Fig.1 Simplified outline (TO-126; SOT32) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BF472 collector-emitter voltage UNIT open emitter BF470 VCEO MAX. MIN. CONDITIONS - -250 V - -300 V - -250 V V open base BF470 BF472 - -300 - -100 mA - 1.8 W lc = -25 mA; VCE = -20 V 50 - Ic = ic = 0; VCE = -30 V; f = 1 MHz - 1.8 lc = -10 mA; VCE = -10 V; f = 100 MHz 60 - ICM peak collector current Plot total power dissipation T mb <114°C hFE DC current gain Cre feedback capacitance fl transition frequency pF MHz NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors PNP high-voltage transistors BF470; BF472 LIMITING VALUES In accordance with the Absolute Maximum Rating System (EC 134). PARAMETER SYMBOL VCBO collector-base voltage MIN. CONDITIONS - -250 -300 V V - -250 -300 -5 -50 -100 -50 1.8 +150 150 +150 V V V mA mA mA W °C BF472 collector-emitter voltage open base BF470 BF472 VEBO emitter-base voltage Ic collector current (DC) ICM IBM peak collector current Plot total power dissipation storage temperature Tj junction temperature operating ambient temperature Tgmb open collector -65 -65 peak base current Tstg UNIT open emitter BF470 VCEO MAX. T mb <114°C °c °c THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-a thermal resistance from junction to ambient Rfh j-mb thermal resistance from junction to mounting base in free air; note 1 r VALUE UNIT 100 K/W K/W 20 Note 1. Transistor mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for collector lead minimum 10 x 10 mm. CHARACTERISTICS TJ = 25 °C unless otherwise specified. SYMBOL ICBO IEBO HFE VcEsat Cre fT PARAMETER collector cut-off current CONDITIONS IE = 0; VCB = -200 V IE = 0; VCB = -200 V; Tj = 1 50 °C MIN. emitter cut-off current Ic = 0; VEB = -5 V DC current gain 50 Ic = -25 mA; VCE = -20 V collector-emitter saturation voltage lc = -30 mA; IB = -5 mA feedback capacitance lc = "c = 0; VCE = -30 V; f = 1 MHz transition frequency lc = -10 mA; VCE = -10 V; f = 100 MHz 60 MAX. -10 -10 -50 -600 1.8 - UNIT nA HA nA mV PF MHz PNP high-voltage transistors BF470; BF472 PACKAGE OUTLINE 2.7 max -•- 78 max - 3.75 3.2 3.0 11.1 max 1*54 < max --1.2 15.3 min 2 L 0.88_ max 0.5 Dimensions in mm. (1) Terminal dimensions within this zone are uncontrolled. Fig.2 TO-126; SOT32. 3 , ft [2"29l 90°