ASI MRF587 Npn silicon rf power transistor Datasheet

MRF587
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .280 4L STUD
DESCRIPTION:
The ASI MRF587 is Designed for
High Linearity Power Amplifier
Applications up to 500 MHz.
A
45°
1
2
B
3
4
FEATURES:
C
D
• PG = 16 dB Typical at 220 W/500 MHz
• Low Noise Figure
• Diffused Ballast Resistors
• Omnigold™ Metalization System
J
E
I
F
G
H
K
MAXIMUM RATINGS
#8-32 UNC
MAXIMUM
DIM
MINIMUM
inches / mm
inches / mm
A
1.010 / 25.65
1.055 / 26.80
IC
200 mA
B
.220 / 5.59
.230 /5.84
C
.270 / 6.86
.285 / 7.24
VCBO
34 V
D
.003 / 0.08
.007 / 0.18
E
.117 / 2.97
17 V
F
VEBO
2.5 V
H
PDISS
5.0 W @ TC = 25 °C
J
.175 / 4.45
.217 / 5.51
K
.275 / 6.99
.285 / 7.24
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
VCEO
CHARACTERISTICS
.130 / 3.30
G
.245 / 6.22
.255 / 6.48
.640 / 16.26
I
Lead 1 = Collector
2 & 3 = Emitter
4 = Base
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
.137 / 3.48
.572 / 14.53
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 1.0 mA
34
V
BVCEO
IC = 5.0 mA
17
V
BVEBO
IE = 100 µA
2.5
V
ICBO
VCB = 10 V
hFE
VCE = 5.0 V
Ccb
VCB = 10 V
GP
ηC
VCC = 15 V
IC = 50 mA
50
f = 1.0 MHz
1.7
11
IC = 90 mA
f = 0.3 GHz
65
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
50
µA
200
---
2.2
pF
dB
%
REV. A
1/1
Similar pages