CYStech Electronics Corp. Spec. No. : C100Q8 Issued Date : 2016.01.12 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTE310P15KQ8 BVDSS -150V -2.2A ID@VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-1.5A 268mΩ(typ) Features • Simple drive requirement • Low on-resistance • Fast switching speed • ESD protected gate • Pb-free and Halogen-free package Equivalent Circuit Outline MTE310P15KQ8 SOP-8 G：Gate S：Source D：Drain Ordering Information Device MTE310P15KQ8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTE310P15KQ8 CYStek Product Specification Spec. No. : C100Q8 Issued Date : 2016.01.12 Revised Date : Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C, VGS=-10V Continuous Drain Current @TA=70 °C, VGS=-10V Pulsed Drain Current (Note 1) Single Pulse Avalanche Current Single Pulse Avalanche Energy @ L=25mH, IAS=-4A, VDD=-25V BVDSS VGS IDM IAS -150 ±20 -2.2 -1.8 -15 -4 EAS 200 (Note 2) TA=25 °C TA=70 °C Operating Junction and Storage Temperature Range Power Dissipation ID PD (Note 3) Tj ; Tstg Unit V A mJ 3.1 2 -55~+150 W °C Note : 1.Pulse width limited by maximum junction temperature. 2.100% tested by conditions of L=25mH, IAS=-3A, VGS=-10V, VDD=-25V. 3.Surface mounted on 1 in² copper pad of FR-4 board, t≤10s. Thermal Resistance Ratings Thermal Resistance Junction-to-Case Junction-to-Ambient (Note) Symbol RθJC RθJA Maximum 20 40 Unit °C / W Note : When mounted on a 1 in2 pad of 2 oz copper, t≤10s; 125°C/W when mounted on minimum copper pad. Electrical Characteristics (Tc=25°C, unless otherwise noted) Symbol Min. Typ. Max. Unit Static BVDSS -150 V V/°C ΔBVDSS/ΔTj -0.1 VGS(th) -2.0 -4.0 V IGSS ±10 -1 μA IDSS -25 RDS(ON) (Note 1) 268 340 mΩ GFS 4.2 S (Note 1) Dynamic Ciss 976 pF Coss 68 Crss 21 td(ON) (Note 1&2) 119 tr 9.4 (Note 1&2) ns td(OFF) (Note 1&2) 1082 tf 218 (Note 1&2) MTE310P15KQ8 Test Conditions VGS=0V, ID=-250μA Reference to 25°C, ID=-1mA VDS=VGS, ID=-250μA VGS=±20V, VDS=0V VDS=-120V, VGS=0V VDS=-120V, VGS=0V, Tj=85°C VGS=-10V, ID=-1.5A VDS=-10V, ID=-1.5A VDS=-25V, VGS=0V, f=1MHz VDS=-75V, ID=-1.3A, VGS=-10V, RG=6.5Ω CYStek Product Specification CYStech Electronics Corp. Spec. No. : C100Q8 Issued Date : 2016.01.12 Revised Date : Page No. : 3/9 Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified) Symbol Qg (Note 1&2) Qgs (Note 1&2) Qgd (Note 1&2) Source-Drain Diode IS ISM(Note 3) VSD(Note 1) trr Qrr Min. - Typ. 21.4 4.1 6.5 Max. - - -0.77 34 50 -2.2 -15 -1.2 - Unit nC Test Conditions VDS=-120V, ID=-1.3A, VGS=-10V A V ns nC IS=-1.3A, VGS=0V IF=-1.3A, dIF/dt=100A/μs Note : 1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% 2.Independent of operating temperature 3.Pulse width limited by maximum junction temperature Recommended Soldering Footprint MTE310P15KQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C100Q8 Issued Date : 2016.01.12 Revised Date : Page No. : 4/9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 -BVDSS, Normalized Drain-Source Breakdown Voltage 10 -10V, -9V, -8V, -7V -I D, Drain Current (A) 8 -6V 6 -5V 4 2 VGS=-4.5V 1.2 1 0.8 0.6 ID=-250μA, VGS=0V 0.4 0 0 2 4 6 8 -VDS, Drain-Source Voltage(V) -75 -50 -25 10 Source Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1000 R DS(on) , Static Drain-Source On-State Resistance(mΩ) 1.2 -VSD, Source-Drain Voltage(V) VGS=0V VGS=-6V -10V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 100 0.01 0.1 1 -ID, Drain Current(A) 0 10 R DS(on) , Normalized Static Drain-Source On-State Resistance 1000 800 2 4 6 8 -IS, Source Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(on) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=-1.5A 600 400 200 2.2 2 VGS=-10V, ID=-1.5A 1.8 1.6 1.4 1.2 1 0.8 RDS(ON) @Tj=25°C : 268mΩ typ. 0.6 0.4 0 0 MTE310P15KQ8 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C100Q8 Issued Date : 2016.01.12 Revised Date : Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 1.4 -VGS(th) , normliz Threshold Voltage Capacitance---(pF) 10000 Ciss 1000 C oss 100 Crss ID=-1mA 1 0.8 ID=-250μA 0.6 0.4 10 0 1.2 5 10 15 20 25 -VDS, Drain-Source Voltage(V) -75 -50 -25 30 Forward Transfer Admittance vs Drain Current 50 75 100 125 150 175 Gate Charge Characteristics VDS=-30V -VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 25 10 10 1 0.1 0.01 0.001 VDS=-10V Pulsed TA=25°C 8 VDS=-75V 6 4 VDS=-120V 2 ID=-1.3A 0 0.01 0.1 1 -ID, Drain Current(A) 10 0 4 8 12 16 Qg, Total Gate Charge(nC) 20 24 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 3 10 100μs 1ms 1 10ms 100ms 0.1 1s TA=25°C, Tj=150°C, VGS=-10V RθJA=40°C/W, Single Pulse DC MTE310P15KQ8 0.1 1 10 100 -ID, Drain-Source Voltage(V) 2.5 2 1.5 1 0.5 TA=25°C, VGS=-10V, RθJA=40°C/W 0 0.01 0.01 -I D, Maximum Drain Current(A) 100 -I D, Drain Current(A) 0 Tj, Junction Temperature(°C) 1000 25 50 75 100 125 150 Tj, Junction Temperature(°C) 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C100Q8 Issued Date : 2016.01.12 Revised Date : Page No. : 6/9 Typical Characteristics(Cont.) Typical Transfer Characteristics Single Pulse Maximum Power Dissipation 10 300 8 -I D, Drain Current (A) Peak Transient Power (W) VDS=-5V TJ(MAX) =150°C TA=25°C RθJA=40°C/W 250 200 150 100 6 4 2 50 0 0 0.001 0.01 0.1 1 10 Pulse Width(s) 100 1000 0 1 2 3 4 5 6 -VGS, Gate-Source Voltage(V) 7 8 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=40°C/W 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTE310P15KQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C100Q8 Issued Date : 2016.01.12 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTE310P15KQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C100Q8 Issued Date : 2016.01.12 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTE310P15KQ8 CYStek Product Specification Spec. No. : C100Q8 Issued Date : 2016.01.12 Revised Date : Page No. : 9/9 CYStech Electronics Corp. SOP-8 Dimension Marking: Device Name Date Code E310 P15K □□□□ 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 *: Typical Inches Min. Max. 0.1850 0.2007 0.1496 0.1575 0.2283 0.2441 0.0500* 0.0130 0.0201 0.1472 0.1527 DIM A B C D E F Millimeters Min. Max. 4.70 5.10 3.80 4.00 5.80 6.20 1.27 * 0.33 0.51 3.74 3.88 DIM G H I J K L Inches Min. Max. 0.0531 0.0689 0.1889 0.2007 0.0019 0.0098 0.0157 0.0500 0.0067 0.0098 0.0531 0.0610 Millimeters Min. Max. 1.35 1.75 4.80 5.10 0.05 0.25 0.40 1.27 0.17 0.25 1.35 1.55 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTE310P15KQ8 CYStek Product Specification