NBB-502 NBB-502Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz RoHS Compliant & Pb-Free Product Package Style: MPGA, Bowtie, 3x3, Ceramic GENERAL PURPOSE AMPLIFIERS (LNAs, HPAs, LINEAR AMPS) 3 Features Reliable, Low-Cost HBT Design 19.0dB Gain, +13.0dBm P1dB@2GHz High P1dB of [email protected] Single Power Supply Operation 50Ω I/O Matched for High Freq. Use Pin 1 Indicator 1 2 3 RF OUT Ground 8 9 4 Ground RF IN 7 6 5 Applications Narrow and Broadband Commercial and Military Radio Designs Linear and Saturated Amplifiers Gain Stage or Driver Amplifiers for MWRadio/Optical Designs (PTP/PMP/ LMDS/UNII/VSAT/WLAN/Cellular/DWDM) Functional Block Diagram Product Description The NBB-502 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost, high-performance solution for general purpose RF and microwave amplification needs. This 50Ω gain block is based on a reliable HBT proprietary MMIC design, providing unsurpassed performance for smallsignal applications. Designed with an external bias resistor, the NBB-502 provides flexibility and stability. The NBB-502 is packaged in a low-cost, surface-mount ceramic package, providing ease of assembly for high-volume tape-and-reel requirements. It is available in either 1,000 or 3,000 piece-per-reel quantities. Ordering Information NBB-502 NBB-502 NBB-502-T1 NBB-502-E NBB-X-K1 Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz Tape & Reel, 1000 Pieces Fully Assembled Evaluation Board Extended Frequency InGaP Amp Designer’s Tool Kit Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT 9 SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Rev A5 DS060124 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 3-13 NBB-502 Absolute Maximum Ratings Parameter GENERAL PURPOSE AMPLIFIERS (LNAs, HPAs, LINEAR AMPS) 3 Rating Unit RF Input Power +20 dBm Power Dissipation 300 mW Device Current 70 mA Channel Temperature 200 °C Operating Temperature -45 to +85 °C Storage Temperature -65 to +150 °C Exceeding any one or a combination of these limits may cause permanent damage. Parameter Min. Specification Typ. Max. Caution! ESD sensitive device. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RoHS status based on EUDirective2002/95/EC (at time of this document revision). Unit Overall Small Signal Power Gain, S21 Condition VD =+3.9V, ICC =35mA, Z0 =50Ω, TA =+25°C 19.0 16.0 Gain Flatness, GF Input and Output VSWR 20.5 dB 19.0 dB f=0.1GHz to 1.0GHz f=1.0GHz to 2.0GHz 17.0 dB f=2.0GHz to 4.0GHz ±0.8 dB f=1.0GHz to 3.0GHz 1.55:1 f=0.1GHz to 4.0GHz 1.50:1 f=4.0GHz to 6.0GHz 1.55:1 f=6.0GHz to 10.0GHz Bandwidth, BW 4.2 GHz BW3 (3dB) Output Power @ -1dB Compression, P1dB 13.0 dBm f=2.0GHz 14.0 dBm f=6.0GHz 4.0 dB f=3.0GHz Third Order Intercept, IP3 +23.0 dBm f=2.0GHz Reverse Isolation, S12 -17.0 dB Noise Figure, NF Device Voltage, VD Gain Temperature Coefficient, δGT/δT 3.6 3.9 4.2 f=0.1GHz to 10.0GHz V -0.0015 dB/°C 85 °C MTTF versus Temperature @ ICC =35mA Case Temperature Junction Temperature MTTF 109.4 °C >1,000,000 hours 179 °C/W Thermal Resistance θJC 3-14 J T – T CASE --------------------------- = θ JC ( °C ⁄ Watt ) V D ⋅ I CC 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. Rev A5 DS060124