Comchip CDST4448-G Smd switching diode Datasheet

SMD Switching Diode
SMD Diodes Specialist
CDST4448-G
-
High Speed
RoHS Device
+
Features
SOT-23
-Fast switching diode.
0.119 (3.00)
0.110 (2.80)
-Surface mount package ideally suited for
automatic insertion.
3
-For general purpose switching applications.
0.056 (1.40)
0.047 (1.20)
-High conductance.
1
2
0.083 (2.10)
0.006 (0.15)
0.002 (0.05)
0.066 (1.70)
Mechanical data
0.103 (2.60)
0.086 (2.20)
0.044 (1.10)
0.035 (0.90)
Case: SOT-23
Terminals: Solder plated, solderable per MILSTD-750, Method 2026.
0.006 (0.15) max
0.020 (0.50)
0.013 (0.35)
0.007 (0.20) min
Weight: 0.008 gram.
Marking: KA3
Dimensions in inches and (millimeters)
Maximum Rating (at T A =25 C unless otherwise noted)
O
Symbol
Limits
Unit
Non-Repetitive peak reverse voltage
V RM
100
V
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
V RRM
V RWM
VR
75
V
V R(RMS)
53
V
Forward continuous current
I FM
500
mA
Average rectified output current
IO
250
mA
I FSM
4.0
2.0
A
PD
350
mW
Thermal resistance-Junction to ambient air
R θJA
357
Storage temperature range
T STG
-65 ~ +150
Parameter
RMS reverse voltage
Peak forward surge current
@1μS
@1.0S
Power dissipation
O
C/W
O
C
Electrical Characteristics (at T A =25 C unless otherwise noted)
O
Parameter
Symbol
Test Conditions
Min
Max
Unit
0.62
0.72
0.855
1.0
1.25
V
2.5
25
μA
nA
Forward voltage
V F1
V F2
V F3
V F4
I F1 =5mA
I F2 =10mA
I F3 =100mA
I F4 =150mA
Reverse current
I R1
I R2
V R1 =75V
V R2 =20V
Capacitance between terminals
CT
V R =0V, f=1MHz
4
pF
Reverse recovery time
t rr
I F =I R =10mA, Irr=0.1I R ,
R L =100Ω
4
nS
REV:A
QW-B0022
Page 1
SMD Switching Diode
SMD Diodes Specialist
Characteristic Curves (CDST4448-G)
Fig. 1 - Forward Characteristics
Fig. 2 - Leakage Current vs
Junction Temperature
1000
10000
I R , Leakage Current (nA)
I F , Forward Current (mA)
O
T J =25 C
100
10
1
0.1
1000
100
10
V R =20V
0.01
0
1
1
V F , Instananeous
Forward Voltage (V)
2
0
100
200
T J , Junction Temperature ( OC)
REV:A
QW-B0022
Page 2
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