STMicroelectronics M295V200T-70M6R 2 mbit 256kb x8 or 128kb x16, boot block single supply flash memory Datasheet

M29F200T
M29F200B
2 Mbit (256Kb x8 or 128Kb x16, Boot Block)
Single Supply Flash Memory
5V±10% SUPPLY VOLTAGE for PROGRAM,
ERASE and READ OPERATIONS
FAST ACCESS TIME: 55ns
FAST PROGRAMMING TIME
– 10µs by Byte / 16µs by Word typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte or Word-by-Word
– Status Register bits and Ready/Busy Output
MEMORY BLOCKS
– Boot Block (Top or Bottom location)
– Parameter and Main blocks
BLOCK, MULTI-BLOCK and CHIP ERASE
MULTI-BLOCK PROTECTION/TEMPORARY
UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
LOW POWER CONSUMPTION
– Stand-by and Automatic Stand-by
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code, M29F200T: 00D3h
– Device Code, M29F200B: 00D4h
DESCRIPTION
The M29F200 is a non-volatile memory that may
be erased electrically at the block or chip level and
programmed in-system on a Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply.
For Program and Erase operations the necessary
high voltages are generated internally. The device
can also be programmed in standard programmers.
The array matrix organisation allows each block to
be erased and reprogrammed without affecting
other blocks. Blocks can be protected against programing and erase on programming equipment,
and temporarily unprotected to make changes in
the application.
July 1998
44
1
TSOP48 (N)
12 x 20 mm
SO44 (M)
Figure 1. Logic Diagram
VCC
17
15
A0-A16
DQ0-DQ14
W
E
DQ15A–1
M29F200T
M29F200B
G
BYTE
RB
RP
VSS
AI01986
1/33
M29F200T, M29F200B
Figure 2A. TSOP Pin Connections
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
W
RP
NC
NC
RB
NC
NC
A7
A6
A5
A4
A3
A2
A1
1
12
13
48
M29F200T
M29F200B
(Normal)
24
37
36
25
Figure 2B. TSOP Reverse Pin Connections
A16
BYTE
VSS
DQ15A–1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
G
VSS
E
A0
A16
BYTE
VSS
DQ15A–1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
G
VSS
E
A0
1
12
13
48
M29F200T
M29F200B
(Reverse)
24
AI01987
Warning: NC = Not Connected.
Figure 2C. SO Pin Connections
Table 1. Signal Names
44
1
2
43
42
3
41
4
40
5
6
39
7
38
8
37
9
36
10
35
11 M29F200T 34
12 M29F200B 33
13
32
14
31
15
30
16
29
17
28
18
27
19
26
20
25
21
24
22
23
AI01989
Warning: NC = Not Connected.
2/33
25
AI01988
Warning: NC = Not Connected.
NC
RB
NC
A7
A6
A5
A4
A3
A2
A1
A0
E
VSS
G
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
37
36
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
W
RP
NC
NC
RB
NC
NC
A7
A6
A5
A4
A3
A2
A1
RP
W
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE
VSS
DQ15A–1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
A0-A16
Address Inputs
DQ0-DQ7
Data Input/Outputs, Command Inputs
DQ8-DQ14
Data Input/Outputs
DQ15A–1
Data Input/Output or Address Input
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset / Block Temporary Unprotect
RB
Ready/Busy Output
BYTE
Byte/Word Organisation
VCC
Supply Voltage
VSS
Ground
M29F200T, M29F200B
Table 2. Absolute Maximum Ratings (1)
Symbol
Parameter
Ambient Operating Temperature
TA
(3)
Value
Unit
–40 to 125
°C
TBIAS
Temperature Under Bias
–50 to 125
°C
TSTG
Storage Temperature
–65 to 150
°C
Input or Output Voltages
–0.6 to 7
V
Supply Voltage
–0.6 to 7
V
A9, E, G, RP Voltage
–0.6 to 13.5
V
VIO
(2)
VCC
V(A9, E, G, RP)
(2)
Notes: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings”
may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the Operating sections of this specification is not i mplied. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other
relevant quality documents.
2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns.
3. Depends on range.
DESCRIPTION (Cont’d)
Instructions for Read/Reset, Auto Select for reading the Electronic Signature or Block Protection
status, Programming, Block and Chip Erase, Erase
Suspend and Resume are written to the device in
cycles of commandsto a Command Interfaceusing
standard microprocessor write timings.
The device is offered in TSOP48 (12 x 20mm) and
SO44 packages. Both normal and reverse pinouts
are available for the TSOP48 package.
Organisation
The M29F200 is organisedas 256Kx8 or 128K x16
bits selectable by the BYTE signal. When BYTE is
Low the Byte-wide x8 organisation is selected and
the address lines are DQ15A–1 and A0-A16. The
Data Input/Output signal DQ15A–1 acts as address line A–1 which selects the lower or upper
Byte of the memory word for output on DQ0-DQ7,
DQ8-DQ14 remain at High impedan ce. When
BYTE is High the memory uses the address inputs
A0-A16 and the Data Input/Outputs DQ0-DQ15.
Memory control is provided by Chip Enable E,
Output Enable G and Write Enable W inputs.
AReset/Block TemporaryUnprotection RP tri-level
input provides a hardware reset when pulled Low,
and when held High (at VID) temporarily unprotects
blocks previously protected allowing them to be
programed and erased. Erase and Program operations are controlled by an internal Program/Erase
Controller (P/E.C.). Status Register data output on
DQ7 provides a Data Polling signal, and DQ6 and
DQ2 provide Toggle signals to indicate the state of
the P/E.C operations. A Ready/Busy RB output
indicates the completion of the internal algorithms.
Memory Blocks
The devices feature asymmetrically blocked architecture providing system memory integration. Both
M29F200T and M29F200B devices have an array
of 7 blocks, one Boot Block of 16 KBytes or 8
KWords, two Parameter Blocks of 8 KBytes or 4
KWords, one Main Block of 32 KBytes or 16
KWords and three Main Blocks of 64 KBytes or 32
KWords. The M29F200T has the Boot Block at the
top of the memory address space and the
M29F200B locates the Boot Block starting at the
bottom. The memory maps are showed in Figure
3. Each block can be erased separately, any combination of blocks can be specified for multi-block
erase or the entire chip may be erased. The Erase
operations are managed automatically by the
P/E.C. The block erase operation can be suspended in order to read from or program to any
block not being ersased, and then resumed.
Block protection provides additional data security.
Each block can be separately protected or unprotected against Program or Erase on programming
equipment. All previously protected blocks can be
temporarily unprotected in the application.
Bus Operations
The following operations can be performed using
the appropriatebus cycles: Read (Array, Electronic
Signature, Block Protection Status), Write command, Output Disable, Standby, Reset, Block Prot ec t io n , Unp ro t e ct io n, P ro t e cti on Verif y,
Unprotection Verify and Block Temporary Unprotection. See Tables 4 and 5.
3/33
M29F200T, M29F200B
Figure 3. Memory Map and Block Address Table (x8)
M29F200B
M29F200T
3FFFFh
3FFFFh
16K BOOT BLOCK
64K MAIN BLOCK
3C000h
3BFFFh
30000h
2FFFFh
8K PARAMETER BLOCK
64K MAIN BLOCK
3A000h
39FFFh
20000h
1FFFFh
8K PARAMETER BLOCK
64K MAIN BLOCK
38000h
37FFFh
10000h
0FFFFh
32K MAIN BLOCK
32K MAIN BLOCK
30000h
2FFFFh
08000h
07FFFh
64K MAIN BLOCK
06000h
05FFFh
20000h
1FFFFh
8K PARAMETER BLOCK
8K PARAMETER BLOCK
64K MAIN BLOCK
10000h
0FFFFh
04000h
03FFFh
16K BOOT BLOCK
64K MAIN BLOCK
00000h
00000h
AI01990
Table 3A. M29F200T Block Address Table
Address Range (x8)
Address Range (x16)
A16
A15
A14
A13
A12
00000h-0FFFFh
00000h-07FFFh
0
0
X
X
X
10000h-1FFFFh
08000h-0FFFFh
0
1
X
X
X
20000h-2FFFFh
10000h-17FFFh
1
0
X
X
X
30000h-37FFFh
18000h-1BFFFh
1
1
0
X
X
38000h-39FFFh
1C000h-1CFFFh
1
1
1
0
0
3A000h-3BFFFh
1D000h-1DFFFh
1
1
1
0
1
3C000h-3FFFFh
1E000h-1FFFFh
1
1
1
1
X
Table 3B. M29F200B Block Address Table
Address Range (x8)
Address Range (x16)
A16
A15
A14
A13
A12
00000h-03FFFh
00000h-01FFFh
0
0
0
0
X
04000h-05FFFh
02000h-02FFFh
0
0
0
1
0
06000h-07FFFh
03000h-03FFFh
0
0
0
1
1
08000h-0FFFFh
04000h-07FFFh
0
0
1
X
X
10000h-1FFFFh
08000h-0FFFFh
0
1
X
X
X
20000h-2FFFFh
10000h-17FFFh
1
0
X
X
X
30000h-3FFFFh
18000h-1FFFFh
1
1
X
X
X
4/33
M29F200T, M29F200B
Command Interface
Instructions, made up of commands written in cycles, can be given to the Program/Erase Controller
through a Command Interface (C.I.). For added
data protection, program or erase execution starts
after 4 or 6 cycles. The first, second,fourth and fifth
cycles are used to input Coded cycles to the C.I.
This Coded sequence is the same for all Program/Erase Controller instructions. The ’Command’ itself and its confirmation, when applicable,
are given on the third, fourth or sixth cycles. Any
incorrect command or any improper command sequence will reset the device to Read Array mode.
Instructions
Seven instructions are defined to perform Read
Array, Auto Select (to read the ElectronicSignature
or Block ProtectionStatus), Program, Block Erase,
Chip Erase, Erase Suspend and Erase Resume.
The internal P/E.C. automatically handles all timing and verification of the Program and Erase
operations.The Status Register Data Polling, Toggle, Error bits and the RB output may be read at
any time, during programming or erase, to monitor
the progress of the operation.
Instructions are composed of up to six cycles. The
first two cycles input a Coded sequence to the
Command Interfacewhich iscommon to all instructions (see Table 8). The third cycle inputs the
instruction set-up command. Subsequent cycles
output the addressed data, Electronic Signature or
Block Protection Status for Read operations. In
order to give additional data protection,the instructions for Program and Block or Chip Erase require
further command inputs. For a Programinstruction,
the fourth command cycle inputs the address and
data to be programmed. For an Erase instruction
(Block or Chip), the fourth and fifth cycles input a
further Coded sequence before the Erase confirm
command on the sixth cycle. Erasure of a memory
block may be suspended,in orderto read data from
another block or to program data in another block,
and then resumed.
When power is first applied or if VCC falls below
VLKO, the command interface is reset to Read
Array.
SIGNAL DESCRIPTIONS
See Figure 1 and Table 1.
Address Inputs (A0-A16). The address inputs for
the memory array are latched during a write operation on the falling edge of Chip Enable E or Write
Enable W. In Word-wide organisation the address
lines are A0-A16, in Byte-wide organisation
DQ15A–1 acts as an additional LSB address line.
When A9 is raised to VID, either a Read Electronic
Signature Manufacturer or Device Code, Block
Protection Status or a Write Block Protection or
Block Unprotection is enabled depending on the
combination of levels on A0, A1, A6, A12 and A15.
Data Input/Outputs (DQ0-DQ7). T h e s e I nputs/Outputsare used in the Byte-wide and Wordwide organisations. The input is data to be
programmed in the memory array or a command
to be written to the C.I. Both are latched on the
rising edge of Chip Enable E or Write Enable W.
The output is data from the Memory Array, the
Electronic Signature Manufacturer or Device
codes, the Block Protection Status or the Status
register Data Polling bit DQ7, the Toggle Bits DQ6
and DQ2, the Error bit DQ5 or the Erase Timer bit
DQ3. Outputs are valid when Chip Enable E and
Output Enable G are active. The output is high
impedance when the chip is deselected or the
outputsare disabled and when RP is at a Low level.
Data Input/Outputs (DQ8-DQ14 and DQ15A–1).
These Inputs/Outputs are additionally used in the
Word-wide organisation.When BYTEis High DQ8DQ14 and DQ15A–1 act as the MSB of the Data
Input or Output, functioning as described for DQ0DQ7 above, and DQ8-DQ15 are ’don’t care’ for
command inputs or status outputs. When BYTE is
Low, DQ8-DQ14 are high impedance, DQ15A–1 is
the Address A–1 input.
Chip Enable (E). The Chip Enable input activates
the memory control logic, input buffers, decoders
and sense amplifiers. E High deselectsthe memory
and reduces the power consumptionto the standby
level. E can also be used to control writing to the
command register and to the memory array, while
W remains at a low level. The Chip Enable must be
forced to VID during the Block Unprotection operation.
Output Enable (G). The Output Enable gates the
outputs through the data buffers during a read
operation. When G is High the outputs are High
impedance. G must be forced to VID level during
Block Protection and Unprotection operations.
Write Enable (W). This input controls writing to the
Command Registerand Addressand Datalatches.
Byte/Word Organization Select (BYTE). The
BYTE input selects the output configuration for the
device: Byte-wide (x8) mode or Word-wide (x16)
mode. When BYTE is Low, the Byte-wide mode is
selected and the data is read and programmed on
DQ0-DQ7. In this mode, DQ8-DQ14 are at high
impedance and DQ15A–1 is the LSB address.
When BYTE is High, the Word-wide mode is selected and the data is read and programmed on
DQ0-DQ15.
5/33
M29F200T, M29F200B
Ready/Busy Output (RB). Ready/Busy is an
open-drainoutput and gives the internalstate of the
P/E.C. of the device. When RB is Low, the device
is Busy with a Program or Erase operation and it
will not accept any additional program or erase
instructions except the Erase Suspend instruction.
WhenRB is High, the device is ready for any Read,
Program or Erase operation. The RB will also be
High when the memory is put in Erase Suspend or
Standby modes.
Reset/Block Temporary Unprotect Input (RP).
The RP Input provides hardware reset and protected block(s) temporary unprotection functions.
Reset of the memory is acheived by pulling RP to
VIL for at least 500ns. When the reset pulse is
given, if the memory is in Read or Standby modes,
it will be available for new operations in 50ns after
the rising edge of RP. If the memory is in Erase,
Erase Suspend or Program modes the reset will
take 10µs during which the RB signal will be held
at VIL. The end of the memory reset will beindicated
by the rising edge of RB. A hardware reset during
an Eraseor Programoperation will corrupt the data
being programmed or the sector(s) being erased.
Temporary block unprotection is made by holding
RP at VID. In this condition previously protected
blocks can be programmed or erased. The transition of RP from VIH to VID must slower than 500ns.
When RP is returned from VID to VIH all blocks
temporarily unprotected will be again protected.
VCC Supply Voltage. The power supply for all
operations (Read, Program and Erase).
VSS Ground. VSS is the reference for all voltage
measurements.
DEVICE OPERATIONS
See Tables 4, 5 and 6.
Read. Read operations are used to output the
contents of the Memory Array, the Electronic Signature, the Status Register or the Block Protection
Status. Both Chip Enable E and Output Enable G
must be low in order to read the output of the
memory.
Write. Write operationsare used to give Instruction
Commands to the memory or to latch input data to
be programmed. A write operationis initiated when
Chip Enable E is Low and Write Enable W is Low
with Output Enable G High. Addresses are latched
on the falling edge of W or E whicheveroccurs last.
Commands and Input Data are latchedon the rising
edge of W or E whichever occurs first.
6/33
Output Disable. The data outputs are high impedance when the Output Enable G is High with Write
Enable W High.
Standby. The memory is in standby when Chip
Enable E is High and the P/E.C. is idle. The power
consumption is reduced to the standby level and
the outputs are high impedance, independent of
the Output Enable G or Write Enable W inputs.
Automatic Standby. After 150ns of bus inactivity
and when CMOS levels are driving the addresses,
the chip automatically enters a pseudo-standby
mode where consumption is reduced to the CMOS
standby value, while outputs still drive the bus.
Electronic Signature. Two codes identifying the
manufacturer and the device can be read from the
memory. The manufacturer’s code for STMicroelectronics is 20h, the device code is D3h for the
M29F200T (Top Boot) and D4h for the M29F200B
(Bottom Boot). These codes allow programming
equipment or applications to automatically match
their interface to the characteristics of the
M29F200. The Electronic Signature is output by a
Read operation when the voltage applied to A9 is
at VID and address input A1 is Low. The manufacturer code is output when the Address input A0 is
Low and the device code when this input is High.
Other Address inputs are ignored. The codes are
output on DQ0-DQ7.
The Electronic Signature can also be read, without
raising A9 to VID, by giving the memory the Instruction AS. If the Byte-wide configuration is selected
the codes are output on DQ0-DQ7with DQ8-DQ14
at High impedance; if the Word-wide configuration
is selected the codes are output on DQ0-DQ7 with
DQ8-DQ15 at 00h.
Block Protection. Each block can be separately
protected against Program or Erase on programming equipment. Block protection provides additional data security, as it disables all program or
erase operations.This mode is activatedwhen both
A9 and G are raised to VID and an address in the
block is applied on A12-A16. The Block Protection
algorithm is shown in Figure 14. Block protection is
initiated on the edge of W falling to VIL. Then after
a delay of 100µs, the edge of W rising to VIH ends
the protection operations. Block protection verify is
achieved by bringing G, E, A0and A6 to VIL and A1
to VIH, while W is at VIH and A9 at VID. Under these
conditions, reading the data output will yield 01h if
the block defined by the inputs on A12-A16 is
protected. Any attempt to program or erase a protected block will be ignored by the device.
M29F200T, M29F200B
Table 4. User Bus Operations (1)
E
G
W
RP
BYTE
A0
A1
A6
A9
A12
A15
DQ15
A–1
DQ8DQ14
DQ0-DQ7
Read Word
VIL
VIL
VIH
VIH
VIH
A0
A1
A6
A9
A12
A15
Data
Output
Data
Output
Data
Output
Read Byte
VIL
VIL
VIH
VIH
VIL
A0
A1
A6
A9
A12
A15
Address
Input
Hi-Z
Data
Output
Write Word
VIL
VIH
VIL
VIH
VIH
A0
A1
A6
A9
A12
A15
Write Byte
VIL
VIH
VIL
VIH
VIL
A0
A1
A6
A9
A12
A15
Address
Input
Hi-Z
Data
Input
Output Disable
VIL
VIH
VIH
VIH
X
X
X
X
X
X
X
Hi-Z
Hi-Z
Hi-Z
Standby
VIH
X
X
VIH
X
X
X
X
X
X
X
Hi-Z
Hi-Z
Hi-Z
X
X
X
VIL
X
X
X
X
X
X
X
Hi-Z
Hi-Z
Hi-Z
Block
Protection(2,4)
VIL
VID
VIL Pulse
VIH
X
X
X
X
VID
X
X
X
X
X
Blocks
Unprotection(4)
VID
VID
VIL Pulse
VIH
X
X
X
X
VID
VIH
VIH
X
X
X
Block
Protection
(2,4)
Verify
VIL
VIL
VIH
VIH
X
VIL
VIH
VIL
VID
A12
A15
X
X
Block
Protect
(3)
Status
Block
Unprotection
Verify(2,4)
VIL
VIL
VIH
VIH
X
VIL
VIH
VIH
VID
A12
A15
X
X
Block
Protect
Status (3)
Block
Temporary
Unprotection
X
X
X
VID
X
X
X
X
X
X
X
X
X
X
Operation
Reset
Notes: 1.
2.
3.
4.
Data Input Data Input
Data
Input
X = VIL or VIH
Block Address must be given on A12-A16 bits.
See Table 6.
Operation performed on programming equipment.
Table 5. Read Electronic Signature (following AS instruction or with A9 = VID)
Org.
Wordwide
Code
E
G
W
BYTE
A0
A1
Other
Addresses
DQ15
A–1
DQ8 DQ14
DQ0 DQ7
VIL
VIL
VIH
VIH
VIL
VIL
Don’t Care
0
00h
20h
M29F200T
VIL
VIL
VIH
VIH
VIH
VIL
Don’t Care
0
00h
D3h
M29F200B
VIL
VIL
VIH
VIH
VIH
VIL
Don’t Care
0
00h
D4h
VIL
VIL
VIH
VIL
VIL
VIL
Don’t Care
Don’t
Care
Hi-Z
20h
M29F200T
VIL
VIL
VIH
VIL
VIH
VIL
Don’t Care
Don’t
Care
Hi-Z
D3h
M29F200B
VIL
VIL
VIH
VIL
VIH
VIL
Don’t Care
Don’t
Care
Hi-Z
D4h
Device
Manufact.
Code
Device
Code
Manufact.
Code
Bytewide
Device
Code
Table 6. Read Block Protection with AS Instruction
E
G
W
A0
A1
A12 - A16
Other
Addresses
DQ0 - DQ7
Protected Block
VIL
VIL
VIH
VIL
VIH
Block Address
Don’t Care
01h
Unprotected Block
VIL
VIL
VIH
VIL
VIH
Block Address
Don’t Care
00h
Code
7/33
M29F200T, M29F200B
Block Temporary Unprotection. Any previously
protected block can be temporarily unprotected in
order to change stored data. The temporaryunprotection mode is activated by bringing RP to VID.
During the temporary unprotection mode the previously protected blocks are unprotected. A block
can be selected and data can be modified by
executingthe Erase or Program instruction with the
RP signal held at VID. When RP is returned to VIH,
all the previously protected blocks are again protected.
Block Unprotection. All protected blocks can be
unprotected on programming equipment to allow
updating of bit contents. All blocks must first be
protected before the unprotection operation. Block
unprotection is activated when A9, G and E are at
VID and A12, A15 at VIH. The Block Unprotection
algorithm is shown in Figure 15. Unprotection is
initiated by theedge of W falling to VIL . Aftera delay
of 10ms, the unprotection operation will end. Unprotectionverify is achieved by bringing G and E to
VIL while A0 is at VIL, A6 and A1 are at VIH and A9
remains at VID. In these conditions, reading the
output data will yield 00h if the block defined by the
inputs A12-A16 has been succesfully unprotected.
Each block must be separatelyverified by giving its
address in order to ensure that it has been unprotected.
INSTRUCTIONS AND COMMANDS
The Command Interface latches commands written to the memory. Instructions are made up from
one or more commands to perform Read Memory
Array, Read Electronic Signature, Read Block Protection, Program, Block Erase, Chip Erase, Erase
Suspend and Erase Resume. Commands are
made of addressand data sequences. The instructionsrequire from 1 to 6 cycles,the first or firstthree
of which are always write operationsused to initiate
the instruction. They are followed by either further
write cycles to confirm the first command or execute the command immediately. Command sequencing must be followed exactly. Any invalid
combination of commands will reset the device to
Read Array. The increased number of cycles has
been chosen to assure maximum data security.
Instructions are initialised by two initial Coded cycles which unlock the Command Interface.In addition, for Erase, instruction confirmation is again
preceded by the two Coded cycles.
Status Register Bits
P/E.C. status is indicated during execution by Data
Polling on DQ7, detection of Toggle on DQ6 and
DQ2, or Error on DQ5 and Erase Timer DQ3 bits.
8/33
Any read attempt during Program or Erase command executionwill automaticallyoutput these five
Status Register bits. The P/E.C. automatically sets
bits DQ2, DQ3, DQ5, DQ6 and DQ7. Other bits
(DQ0, DQ1 and DQ4) are reserved for future use
and should be masked. See Tables 9 and 10.
Data Polling Bit (DQ7). When Programming operations are in progress, this bit outputs the complement of the bit being programmed on DQ7.
During Erase operation, it outputs a ’0’. After completion of the operation, DQ7 will output the bit last
programmed or a ’1’ after erasing. Data Polling is
valid and only effective during P/E.C. operation,
that is after the fourth W pulse for programming or
after the sixth W pulse for erase. It must be performed at the address being programmed or at an
address within the block being erased. If all the
blocks selected for erasure are protected, DQ7 will
be set to ’0’ for about 100µs, and then return to the
previous addressed memory data value. See Figure 11 for the Data Polling flowchart and Figure 10
for the Data Polling waveforms. DQ7 will also flag
the Erase Suspend mode by switching from ’0’ to
’1’ at the start of the Erase Suspend. In order to
monitor DQ7 in the Erase Suspend mode an address within a block being erased must be provided. For a Read Operation in Erase Suspend
mode, DQ7 will output ’1’ if the read is attempted
on a blockbeing erasedand the data valueon other
blocks. During Program operation in Erase Suspend Mode, DQ7 will have the same behaviour as
in the normal program execution outside of the
suspend mode.
Table 7. Commands
Hex Code
Command
00h
Invalid/Reserved
10h
Chip Erase Confirm
20h
Reserved
30h
Block Erase Resume/Confirm
80h
Set-up Erase
90h
Read Electronic Signature/
Block Protection Status
A0h
Program
B0h
Erase Suspend
F0h
Read Array/Reset
M29F200T, M29F200B
Table 8. Instructions (1)
Mne.
Instr.
Cyc.
1+
RD
(2,4)
1st Cyc.
Addr.
(3,7)
X
Data
Read/Reset
Memory Array
3+
Auto Select
3+
Addr. (3,7)
Addr. (3,7)
Addr. (3,7)
Program
Block Erase
4
6
Chip Erase
6
Addr. (3,7)
Addr. (3,7)
Data
ES (10)
ER
Erase
Suspend
Erase
Resume
1
Addr.
(3,7)
Data
1
Addr.
Data
6th Cyc.
7th Cyc.
Read Memory Array until a new write cycle is initiated.
5555h
AAAAh
Word
5555h
2AAAh
5555h
AAh
55h
F0h
Byte
AAAAh
5555h
AAAAh
Word
5555h
2AAAh
5555h
AAh
55h
90h
Byte
AAAAh
5555h
AAAAh
Word
5555h
2AAAh
5555h
AAh
55h
A0h
Program
Data
Byte
AAAAh
5555h
AAAAh
AAAAh
5555h
Word
5555h
2AAAh
5555h
5555h
2AAAh
AAh
55h
80h
AAh
55h
30h
Byte
AAAAh
5555h
AAAAh
AAAAh
5555h
AAAAh
Word
5555h
2AAAh
5555h
5555h
2AAAh
5555h
AAh
55h
80h
AAh
55h
10h
Data
CE
5th Cyc.
AAAAh
Data
BE
4th Cyc.
Byte
Data
PG
3rd Cyc.
F0h
Data
AS (4)
2nd Cyc.
X
B0h
(3,7)
X
30h
Read Memory Array until a new write cycle
is initiated.
Read Electronic Signature or Block
Protection Status until a new write cycle is
initiated. See Note 5 and 6.
Program
Address
Read Data Polling or Toggle Bit
until Program completes.
Block
Additional
(8)
Address Block
30h
Note 9
Read until Toggle stops, then read all the data needed from any
Block(s) not being erased then Resume Erase.
Read Data Polling or Toggle Bits until Erase completes or Erase is
suspended another time
Notes: 1. Commands not interpreted in this table will default to read array mode.
2. A wait of tPLYH is necessary after a Read/Reset command if the memory was in an Erase or Program mode
before starting any new operation.
3. X = Don’t Care.
4. The first cycles of the RD or AS instructions are followed by read operations. Any number of read cycles can occur after
the command cycles.
5. Signature Address bits A0, A1 at VIL will output Manufacturer code (20h). Address bits A0 at VIH and A1 at VIL will output
Device code.
6. Block Protection Address: A0 at VIL, A1 at VIH and A12-A16 within the Block will output the Block Protection status.
7. For Coded cycles address inputs A15 and A16 are don’t care.
8. Optional, additional Blocks addresses must be entered within the erase timeout delay after last write entry,
timeout status can be verified through DQ3 value (see Erase Timer Bit DQ3 description).
When full command is entered, read Data Polling or Toggle bit until Erase is completed or suspended.
9. Read Data Polling, Toggle bits or RB until Erase completes.
10.During Erase Suspend, Read and Data Program functions are allowed in blocks not being erased.
9/33
M29F200T, M29F200B
Table 9. Status Register Bits
DQ
7
Name
Data
Polling
Logic Level
Toggle Bit
Erase Complete or erase
block in Erase Suspend
’0’
Erase On-going
DQ
Program Complete or data
of non erase block during
Erase Suspend
DQ
Program On-going
DQ
’-1-1-1-1-1-1-1-’
5
4
3
Error Bit
Erase or Program On-going
Program Complete
Erase Complete or Erase
Suspend on currently
addressed block
Indicates the P/E.C. status, check during
Program or Erase, and on completion
before checking bits DQ5 for Program or
Erase Success.
Successive reads output complementary
data on DQ6 while Programming or Erase
operations are on-going. DQ6 remains at
constant level when P/E.C. operations are
completed or Erase Suspend is
acknowledged.
’1’
Program or Erase Error
’0’
Program or Erase On-going
’1’
Erase Timeout Period Expired
P/E.C. Erase operation has started. Only
possible command entry is Erase Suspend
(ES).
’0’
Erase Timeout Period
On-going
An additional block to be erased in parallel
can be entered to the P/E.C.
This bit is set to ’1’ in the case of
Programming or Erase failure.
Reserved
Erase
Time Bit
’-1-0-1-0-1-0-1-’
2
Note
’1’
’-1-0-1-0-1-0-1-’
6
Definition
Toggle Bit
1
DQ
1
Reserved
0
Reserved
Chip Erase, Erase or Erase
Suspend on the currently
addressed block.
Erase Error due to the
currently addressed block
(when DQ5 = ’1’).
Indicates the erase status and allows to
identify the erased block
Program on-going, Erase
on-going on another block or
Erase Complete
Erase Suspend read on
non Erase Suspend block
Notes: Logic level ’1’ is High, ’0’ is Low. -0-1-0-0-0-1-1-1-0- represent bit value in successive Read operations.
Toggle Bit (DQ6). When Programming or Erasing
operations are in progress, successive attempts to
read DQ6 will output complementarydata. DQ6 will
toggle following toggling of either G, or E when G
is low. The operation is completed when two successive reads yield the same output data. The next
read will output the bit last programmed or a ’1’ after
erasing. The toggle bit DQ6 is valid only during
P/E.C. operations, that is after the fourth W pulse
for programming or after the sixth W pulse for
10/33
Erase. If the blocks selected for erasure are protected, DQ6 will toggle for about 100µs and then
return back to Read. DQ6 will be set to ’1’ if a Read
operationis attemptedon an Erase Suspendblock.
When erase is suspended DQ6 will toggle during
programming operations in a block different to the
block in Erase Suspend. Either E or G toggling will
cause DQ6 to toggle. See Figure 12 for Toggle Bit
flowchart and Figure 13 for Toggle Bit waveforms.
M29F200T, M29F200B
Table 10. Polling and Toggle Bits
Mode
DQ7
DQ6
DQ2
DQ7
Toggle
1
Erase
0
Toggle
Note 1
Erase Suspend Read
(in Erase Suspend
block)
1
1
Toggle
Erase Suspend Read
(outside Erase Suspend
block)
DQ7
DQ6
DQ2
Erase Suspend Program
DQ7
Toggle
N/A
Program
the Word-wide configuration during the first cycle.
During the second cycle the Coded cycles consist
of writing the data 55h at address 5555h in the
Byte-wide configuration and at address 2AAAh in
the Word-wide configuration. In the Byte-wideconfiguration the address lines A–1 to A14 are valid, in
Word-wide A0 to A14 are valid, other address lines
are ’don’t care’. The Coded cycles happen on first
and second cycles of the command write or on the
fourth and fifth cycles.
Instructions
See Table 8.
Note: 1. Toggle if the address is within a block being erased.
’1’ if the address is within a block not being erased.
Toggle Bit (DQ2). This toggle bit, together with
DQ6, can be used to determine the device status
during the Erase operations. It can also be used to
identify the block being erased. During Erase or
Erase Suspend a read from a block being erased
will cause DQ2 to toggle. A read from a block not
being erased will set DQ2 to ’1’ during erase and
to DQ2 during Erase Suspend. During Chip Erase
a read operation will cause DQ2 to toggle as all
blocks are being erased. DQ2 will be set to ’1’
during program operation and when erase is complete. After erase completion and if the error bit
DQ5 is set to ’1’, DQ2 will toggle if the faulty block
is addressed.
Error Bit (DQ5). This bit is set to ’1’ by the P/E.C.
when there is a failure of programming, block
erase, or chip erase that results in invalid data in
the memory block. In caseof an error in block erase
or program, the block in which the error occured or
to which the programmed data belongs, must be
discarded. The DQ5 failure condition will also appear if a user tries to program a ’1’ to a locationthat
is previously programmed to ’0’. Other Blocks may
stillbe used.The error bit resets after a Read/Reset
(RD) instruction. In case of success of Program or
Erase, the error bit will be set to ’0’ .
Erase Timer Bit (DQ3). This bit is set to ’0’ by the
P/E.C. when the last block Erase command has
been entered to the Command Interface and it is
awaiting the Erase start. When the erase timeout
period is finished, after 80µs to 120µs, DQ3 returns
to ’1’.
Coded Cycles
The two Coded cycles unlock the Command Interface. They are followed by an input command or a
confirmation command. The Coded cycles consist
of writing the data AAh at address AAAAh in the
Byte-wide configuration and at address 5555h in
Read/Reset (RD) Instruction. The Read/Reset
instruction consists of one write cycle giving the
command F0h. It can be optionally preceded by the
two Coded cycles. Subsequentread operationswill
read the memory array addressed and output the
data read. A wait state of 10µs is necessary after
Read/Reset prior to any valid read if the memory
was in an Erase mode when the RD instruction is
given.
Auto Select (AS) Instruction. This instruction
uses the two Coded cycles followed by one write
cycle giving the command 90h to address AAAAh
in the Byte-wide configuration or address 5555h in
the Word-wide configuration for command set-up.
A subsequent read will output the manufacturer
code and the device code or the block protection
status depending on the levels of A0 and A1. The
manufacturer code, 20h, is output when the addresses lines A0 and A1 are Low, the device code,
D3h for Top Boot, D4h for Bottom Boot is output
when A0 is High with A1 Low.
The AS instruction also allows access to the block
protectionstatus.After givingthe AS instruction, A0
is set to VIL with A1 at VIH, while A12-A16 define
the address of the block to be verified. A read in
these conditions will output a 01h if the block is
protected and a 00h if the block is not protected.
Program (PG) Instruction. This instruction uses
four write cycles. Both for Byte-wide configuration
and for Word-wide configuration. The Program
command A0h is written to address AAAAh in the
Byte-wide configuration or to address 5555h in the
Word-wide configurationon the third cycle after two
Coded cycles. A fourth write operation latches the
Address on the falling edge of W or E and the Data
to be written on the rising edge and starts the
P/E.C. Read operations output the Status Register
bits after the programming has started. Memory
programming is made only by writing ’0’ in place of
’1’. Status bits DQ6 and DQ7 determine if programming is on-goingand DQ5 allows verification of any
possible error. Programming at an address not in
blocks being erased is also possible during erase
suspend. In this case, DQ2 will toggle at the address being programmed.
11/33
M29F200T, M29F200B
Table 11. AC Measurement Conditions
High Speed
Standard
Input Rise and Fall Times
≤ 10ns
≤ 10ns
Input Pulse Voltages
0 to 3V
0.45V to 2.4V
1.5V
0.8V and 2V
Input and Output Timing Ref. Voltages
Figure 4. AC Testing Input Output Waveform
Figure 5. AC Testing Load Circuit
1.3V
High Speed
1N914
3V
1.5V
3.3kΩ
0V
DEVICE
UNDER
TEST
Standard
2.4V
OUT
CL
2.0V
0.8V
0.45V
CL = 30pF for High Speed
CL = 100pF for Standard
AI01275B
CL includes JIG capacitance
AI01276B
Table 12. Capacitance (1) (TA = 25 °C, f = 1 MHz )
Symbol
C IN
C OUT
Parameter
Test Condition
Max
Unit
VIN = 0V
6
pF
VOUT = 0V
12
pF
Input Capacitance
Output Capacitance
Min
Note: 1. Sampled only, not 100% tested.
Block Erase (BE) Instruction. This instruction
uses a minimum of six write cycles. The Erase
Set-up command 80h is written to address AAAAh
in the Byte-wide configuration or address 5555h in
the Word-wide configuration on third cycle after the
two Coded cycles. The Block Erase Confirm command 30h is similarly written on the sixth cycle after
another two Coded cycles. During the input of the
second command an addresswithin the block to be
erased is given and latched into the memory. Additional block Erase Confirm commands and block
addresses can be written subsequently to erase
12/33
other blocks in parallel, without further Coded cycles. The erase will start after the erase timeout
period (see Erase Timer Bit DQ3 description).
Thus, additional Erase Confirm commands for
other blocks must be given within this delay. The
input of a new Erase Confirm command will restart
the timeout period. The status of the internal timer
can be monitored through the level of DQ3, if DQ3
is ’0’ the Block Erase Command has been given
and the timeout is running, if DQ3 is ’1’, the timeout
has expired and the P/E.C. is erasing the Block(s).
If the second command given is not an erase
M29F200T, M29F200B
Table 13. DC Characteristics
(TA = 0 to 70°C, –40 to 85°C or –40 to 125°C; VCC = 5V ± 10%)
Symbol
Parameter
Test Condition
Min
Max
Unit
0V ≤ VIN ≤ VCC
±1
µA
0V ≤ VOUT ≤ VCC
±1
µA
ILI
Input Leakage Current
ILO
Output Leakage Current
ICC1
Supply Current (Read) TTL Byte
E = VIL, G = VIH, f = 6MHz
20
mA
ICC1
Supply Current (Read) TTL Word
E = VIL, G = VIH, f = 6MHz
20
mA
ICC2
Supply Current (Standby) TTL
E = VIH
1
mA
ICC3
Supply Current (Standby) CMOS
E = VCC ± 0.2V
100
µA
Byte program, Block or
Chip Erase in progress
20
mA
ICC4 (1)
Supply Current (Program or Erase)
VIL
Input Low Voltage
–0.5
0.8
V
VIH
Input High Voltage
2
VCC + 0.5
V
VOL
Output Low Voltage
0.45
V
VOH
Output High Voltage TTL
IOH = –2.5mA
2.4
V
Output High Voltage CMOS
IOH = –100µA
VCC –0.4V
V
VID
A9 Voltage (Electronic Signature)
IID
A9 Current (Electronic Signature)
VLKO
IOL = 5.8mA
Supply Voltage (Erase and
Program lock-out)
11.0
A9 = VID
3.2
12.0
V
100
µA
4.2
V
Note: 1. Sampled only, not 100% tested.
confirm or if the Coded cycles are wrong, the
instruction aborts, and the device is reset to Read
Array. It is not necessary to program the block with
00h as the P/E.C. will do this automatically before
to erasing to FFh. Read operations after the sixth
rising edge of W or E output the status register
status bits.
During the executionof the erase by the P/E.C., the
memory accepts only the Erase Suspend ES and
Read/Reset RD instructions. Data Polling bit DQ7
returns ’0’ while the erasure is in progress and ’1’
when it has completed. The Toggle bit DQ2 and
DQ6 toggle during the erase operation. They stop
when erase is completed. After completion the
Status Register bit DQ5 returns’1’ if there has been
an erase failure. In such a situation, the Toggle bit
DQ2 can be used to determine which block is not
correctly erased. In the case of erase failure, a
Read/Reset RD instruction is necessary in order to
reset the P/E.C.
Chip Erase (CE) Instruction. Thisinstructionuses
six write cycles. The Erase Set-up command 80h
is written to address AAAAh in the Byte-wide configuration or the address 5555h in the Word-wide
configurationon the third cycle after the two Coded
cycles. The Chip Erase Confirm command 10h is
similarly written on the sixth cycle after anothertwo
Coded cycles. If the second command given is not
an erase confirm or if the Coded cycles are wrong,
the instruction aborts and the device is reset to
Read Array. It is not necessaryto programthe array
with 00h firstas theP/E.C. will automaticallydo this
before erasing it to FFh. Read operations after the
sixth rising edge of W or E output the Status
Register bits. During the execution of the erase by
the P/E.C., Data Polling bit DQ7 returns ’0’, then ’1’
on completion. The Toggle bits DQ2 and DQ6
toggle during erase operation and stop when erase
is completed. After completion the Status Register
bit DQ5 returns ’1’ if there has been an Erase
Failure.
13/33
M29F200T, M29F200B
Table 14A. Read AC Characteristics
(TA = 0 to 70°C, –40 to 85°C or –40 to 125°C)
M29F200T / M29F200B
Symbol
Alt
Parameter
-55
-70
High Speed
Interface
Standard
Interface
Test Condition
Min
tAVAV
tRC
Address Valid to Next Address Valid
E = VIL, G = VIL
tAVQV
tACC
Address Valid to Output Valid
E = VIL, G = VIL
tELQX
(1)
tLZ
Chip Enable Low to Output Transition
G = VIL
tELQV
(2)
tCE
Chip Enable Low to Output Valid
G = VIL
tGLQX
(1)
tOLZ
Output Enable Low to Output
Transition
E = VIL
tGLQV (2)
tOE
Output Enable Low to Output Valid
E = VIL
tEHQX
tOH
Chip Enable High to Output
Transition
G = VIL
tHZ
Chip Enable High to Output Hi-Z
G = VIL
tOH
Output Enable High to Output
Transition
E = VIL
tDF
Output Enable High to Output Hi-Z
E = VIL
tOH
Address Transition to Output
Transition
tEHQZ
(1)
tGHQX
tGHQZ
(1)
tAXQX
tPLYH (1,3)
E = VIL, G = VIL
Max
55
Min
Max
70
55
0
ns
70
0
55
0
0
0
0
0
0
0
ns
ns
20
0
10
ns
ns
20
15
ns
ns
30
15
ns
ns
70
30
tRRB
RP Low to Read Mode
tREADY
Unit
ns
ns
10
µs
tPHEL
tRH
RP High to Chip Enable Low
50
50
ns
tPLPX
tRP
RP Pulse Width
500
500
ns
tELBL
tELBH
tELFL Chip Enable to BYTE Switching Low
tELFH or High
5
5
ns
tBLQZ
tFLQZ BYTE Switching Low to Output Hi-Z
15
20
ns
tBHQV
tFHQV BYTE Switching High to Output Valid
30
30
ns
Notes: 1. Sampled only, not 100% tested.
2. G may be delayed by up to tELQV - tGLQV after the falling edge of E without increasing tELQV.
3. To be considered only if the Reset pulse is given while the memory is in Erase or Program mode.
Erase Suspend (ES) Instruction. The Block
Erase operation may be suspended by this instruction which consists of writing the command B0h
without any specific address. No Coded cycles are
required. It permits reading of data from another
block and programming in another block while an
erase operation is in progress. Erase suspend is
accepted only during the Block Erase instruction
execution. Writing this command during Erase
14/33
timeout will, in addition to suspending the erase,
terminate the timeout. The Toggle bit DQ6 stops
togglingwhen the P/E.C. is suspended.The Toggle
bits will stop toggling between 0.1µs and 15µs after
the Erase Suspend (ES) command has been written. The device will then automatically be set to
Read Memory Array mode. When erase is suspended, a Read from blocks being erased will
output DQ2 toggling and DQ6 at ’1’. A Read from
M29F200T, M29F200B
Table 14B. Read AC Characteristics
(TA = 0 to 70°C, –40 to 85°C or –40 to 125°C)
M29F200T / M29F200B
Symbol
Alt
Parameter
-90
-120
Standard
Interface
Standard
Interface
Test Condition
Min
tAVAV
tRC
Address Valid to Next Address Valid
E = VIL, G = VIL
tAVQV
tACC
Address Valid to Output Valid
E = VIL, G = VIL
tELQX
(1)
tLZ
Chip Enable Low to Output Transition
G = VIL
tELQV
(2)
tCE
Chip Enable Low to Output Valid
G = VIL
tGLQX
(1)
tOLZ
Output Enable Low to Output
Transition
E = VIL
tGLQV (2)
tOE
Output Enable Low to Output Valid
E = VIL
tEHQX
tOH
Chip Enable High to Output
Transition
G = VIL
tHZ
Chip Enable High to Output Hi-Z
G = VIL
tOH
Output Enable High to Output
Transition
E = VIL
tDF
Output Enable High to Output Hi-Z
E = VIL
tOH
Address Transition to Output
Transition
tEHQZ
(1)
tGHQX
tGHQZ
(1)
tAXQX
tPLYH (1,3)
E = VIL, G = VIL
Max
90
Min
Max
120
90
0
ns
120
0
90
0
0
0
0
0
0
0
ns
ns
30
0
10
ns
ns
30
20
ns
ns
50
20
ns
ns
120
35
tRRB
RP Low to Read Mode
tREADY
Unit
ns
ns
10
µs
tPHEL
tRH
RP High to Chip Enable Low
50
50
ns
tPLPX
tRP
RP Pulse Width
500
500
ns
tELBL
tELBH
tELFL Chip Enable to BYTE Switching Low
tELFH or High
5
5
ns
tBLQZ
tFLQZ BYTE Switching Low to Output Hi-Z
20
30
ns
tBHQV
tFHQV BYTE Switching High to Output Valid
40
40
ns
Notes: 1. Sampled only, not 100% tested.
2. G may be delayed by up to tELQV - tGLQV after the falling edge of E without increasing tELQV.
3. To be considered only if the Reset pulse is given while the memory is in Erase or Program mode.
a block not being erased returns valid data. During
suspension the memory will respond only to the
Erase Resume ER and the Program PG instructions. A Program operation can be initiated during
erase suspend in one of the blocks not being
erased. It will result in both DQ2 and DQ6 toggling
when the data is beingprogrammed. ARead/Reset
command will definitively abort erasure and result
in invalid data in the blocks being erased.
Erase Resume (ER) Instruction. If an Erase Suspend instruction was previously executed, the
erase operation may be resumed by giving the
command 30h, at any address, and without any
Coded cycles.
15/33
16/33
Note: Write Enable (W) = High
BYTE
DQ0-DQ7/
DQ8-DQ15
G
E
A0-A16/
A–1
ADDRESS VALID
AND CHIP ENABLE
tELBL/tELBH
tAVQV
tGLQV
OUTPUT ENABLE
tGLQX
tELQX
tELQV
VALID
tAVAV
DATA VALID
tBLQZ
VALID
tGHQZ
tGHQX
tEHQX
tEHQZ
tAXQX
AI02002
M29F200T, M29F200B
Figure 6. Read Mode AC Waveforms
M29F200T, M29F200B
Table 15A. Write AC Characteristics, Write Enable Controlled
(TA = 0 to 70°C, –40 to 85°C or –40 to 125°C)
M29F200T / M29F200B
Symbol
Alt
-55
-70
High Speed
Interface
Standard
Interface
Parameter
Min
Max
Min
Unit
Max
tAVAV
tWC
Address Valid to Next Address Valid
55
70
ns
tELWL
tCS
Chip Enable Low to Write Enable Low
0
0
ns
tWLWH
tWP
Write Enable Low to Write Enable High
30
35
ns
tDVWH
tDS
Input Valid to Write Enable High
25
30
ns
tWHDX
tDH
Write Enable High to Input Transition
0
0
ns
tWHEH
tCH
Write Enable High to Chip Enable High
0
0
ns
tWHWL
tWPH
Write Enable High to Write Enable Low
20
20
ns
tAVWL
tAS
Address Valid to Write Enable Low
0
0
ns
tWLAX
tAH
Write Enable Low to Address Transition
45
45
ns
Output Enable High to Write Enable Low
0
0
ns
tGHWL
tVCHEL
tVCS
VCC High to Chip Enable Low
50
50
µs
tWHGL
tOEH
Write Enable High to Output Enable Low
0
0
ns
tPHPHH (1,2)
tVIDR
RP Rise Time to VID
500
500
ns
tPLPX
tRP
RP Pulse Width
500
500
ns
tWHRL
(1)
tPHWL
(1)
tBUSY Program Erase Valid to RB Delay
tRSP
RP High to Write Enable Low
30
4
30
4
ns
µs
Notes: 1. Sample only, not 100% tested.
2. This timing is for Temporary Block Unprotection operation.
POWER SUPPLY
Power Up
The memory Command Interface is reset on power
up to Read Array. Either E or W must be tied to VIH
during Power Up to allow maximum security and
the possibility to write a command on the first rising
edge of E and W. Any write cycle initiation is
blocked when Vcc is below VLKO.
Supply Rails
Normal precautions must be taken for supply voltage decoupling; each device in a system should
have the VCC rail decoupled with a 0.1µF capacitor
close to the VCC and VSS pins. The PCB trace
widths should be sufficient to carry the VCC program and erase currents required.
17/33
M29F200T, M29F200B
Table 15B. Write AC Characteristics, Write Enable Controlled
(TA = 0 to 70°C, –40 to 85°C or –40 to 125°C)
M29F200T / M29F200B
Symbol
Alt
-90
-120
Standard
Interface
Standard
Interface
Parameter
Min
Max
Min
Unit
Max
tAVAV
tWC
Address Valid to Next Address Valid
90
120
ns
tELWL
tCS
Chip Enable Low to Write Enable Low
0
0
ns
tWLWH
tWP
Write Enable Low to Write Enable High
45
50
ns
tDVWH
tDS
Input Valid to Write Enable High
45
50
ns
tWHDX
tDH
Write Enable High to Input Transition
0
0
ns
tWHEH
tCH
Write Enable High to Chip Enable High
0
0
ns
tWHWL
tWPH
Write Enable High to Write Enable Low
20
20
ns
tAVWL
tAS
Address Valid to Write Enable Low
0
0
ns
tWLAX
tAH
Write Enable Low to Address Transition
45
50
ns
Output Enable High to Write Enable Low
0
0
ns
tGHWL
tVCHEL
tVCS
VCC High to Chip Enable Low
50
50
µs
tWHGL
tOEH
Write Enable High to Output Enable Low
0
0
ns
tPHPHH (1,2)
tVIDR
RP Rise Time to VID
500
500
ns
tPLPX
tRP
RP Pulse Width
500
500
ns
tWHRL
(1)
tPHWL
(1)
tBUSY Program Erase Valid to RB Delay
tRSP
RP High to Write Enable Low
Notes: 1. Sample only, not 100% tested.
2. This timing is for Temporary Block Unprotection operation.
18/33
35
4
50
4
ns
µs
M29F200T, M29F200B
Figure 7. Write AC Waveforms, W Controlled
tAVAV
A0-A16/
A–1
VALID
tWLAX
tAVWL
tWHEH
E
tELWL
tWHGL
G
tGHWL
tWLWH
W
tWHWL
tDVWH
DQ0-DQ7/
DQ8-DQ15
tWHDX
VALID
VCC
tVCHEL
RB
tWHRL
AI01991
Note: Address are latched on the falling edge of W, Data is latched on the rising edge of W.
19/33
M29F200T, M29F200B
Table 16A. Write AC Characteristics, Chip Enable Controlled
(TA = 0 to 70°C, –40 to 85°C or –40 to 125°C)
M29F200T / M29F200B
Symbol
Alt
-55
-70
High Speed
Interface
Standard
Interface
Parameter
Min
Max
Min
Unit
Max
tAVAV
tWC
Address Valid to Next Address Valid
55
70
ns
tWLEL
tWS
Write Enable Low to Chip Enable Low
0
0
ns
tELEH
tCP
Chip Enable Low to Chip Enable High
30
35
ns
tDVEH
tDS
Input Valid to Chip Enable High
25
30
ns
tEHDX
tDH
Chip Enable High to Input Transition
0
0
ns
tEHWH
tWH
Chip Enable High to Write Enable High
0
0
ns
tEHEL
tCPH
Chip Enable High to Chip Enable Low
20
20
ns
tAVEL
tAS
Address Valid to Chip Enable Low
0
0
ns
tELAX
tAH
Chip Enable Low to Address Transition
45
45
ns
Output Enable High Chip Enable Low
0
0
ns
tGHEL
tVCHWL
tVCS
VCC High to Write Enable Low
50
50
µs
tEHGL
tOEH
Chip Enable High to Output Enable Low
0
0
ns
tPHPHH (1,2)
tVIDR
RP Rise TIme to VID
500
500
ns
tPLPX
tRP
RP Pulse Width
500
500
ns
tEHRL
(1)
tBUSY
tPHWL
(1)
tRSP
Program Erase Valid to RB Delay
RP High to Write Enable Low
Notes: 1. Sample only, not 100% tested.
2. This timing is for Temporary Block Unprotection operation.
20/33
30
4
30
4
ns
µs
M29F200T, M29F200B
Table 16B. Write AC Characteristics, Chip Enable Controlled
(TA = 0 to 70°C, –40 to 85°C or –40 to 125°C)
M29F200T / M29F200B
Symbol
Alt
-90
-120
Standard
Interface
Standard
Interface
Parameter
Min
Max
Min
Unit
Max
tAVAV
tWC
Address Valid to Next Address Valid
90
120
ns
tWLEL
tWS
Write Enable Low to Chip Enable Low
0
0
ns
tELEH
tCP
Chip Enable Low to Chip Enable High
45
50
ns
tDVEH
tDS
Input Valid to Chip Enable High
45
50
ns
tEHDX
tDH
Chip Enable High to Input Transition
0
0
ns
tEHWH
tWH
Chip Enable High to Write Enable High
0
0
ns
tEHEL
tCPH
Chip Enable High to Chip Enable Low
20
20
ns
tAVEL
tAS
Address Valid to Chip Enable Low
0
0
ns
tELAX
tAH
Chip Enable Low to Address Transition
45
50
ns
Output Enable High Chip Enable Low
0
0
ns
tGHEL
tVCHWL
tVCS
VCC High to Write Enable Low
50
50
µs
tEHGL
tOEH
Chip Enable High to Output Enable Low
0
0
ns
tPHPHH (1,2)
tVIDR
RP Rise TIme to VID
500
500
ns
tPLPX
tRP
RP Pulse Width
500
500
ns
tEHRL
(1)
tBUSY
tPHWL
(1)
tRSP
Program Erase Valid to RB Delay
RP High to Write Enable Low
35
4
50
4
ns
µs
Notes: 1. Sample only, not 100% tested.
2. This timing is for Temporary Block Unprotection operation.
21/33
M29F200T, M29F200B
Figure 8. Write AC Waveforms, E Controlled
tAVAV
A0-A16/
A–1
VALID
tELAX
tAVEL
tEHWH
W
tWLEL
tEHGL
G
tGHEL
tELEH
E
tEHEL
tDVEH
DQ0-DQ7/
DQ8-DQ15
tEHDX
VALID
VCC
tVCHWL
RB
tEHRL
AI01992
Note: Address are latched on the falling edge of E, Data is latched on the rising edge of E.
Figure 9. Read and Write AC Characteristics, RP Related
E
tPHEL
W
tPHWL
RB
RP
tPLPX
tPHPHH
tPLYH
AI02091
22/33
M29F200T, M29F200B
Table 17A. Data Polling and Toggle Bit AC Characteristics (1)
(TA = 0 to 70°C, –40 to 85°C or –40 to 125°C)
M29F200T / M29F200B
Symbol
tWHQ7V
tEHQ7V
tQ7VQV
tWHQV
tEHQV
-55
-70
High Speed
Interface
Standard
Interface
Parameter
Unit
Min
Max
Min
Max
Write Enable High to DQ7 Valid (Program, W Controlled)
10
2400
10
2400
µs
Write Enable High to DQ7 Valid (Chip Erase, W Controlled)
1.0
30
1.0
30
sec
Chip Enable High to DQ7 Valid (Program, E Controlled)
10
2400
10
2400
µs
Chip Enable High to DQ7 Valid (Chip Erase, E Controlled)
1.0
30
1.0
30
sec
30
ns
Q7 Valid to Output Valid (Data Polling)
30
Write Enable High to Output Valid (Program)
10
2400
10
2400
µs
Write Enable High to Output Valid (Chip Erase)
1.0
30
1.0
30
sec
Chip Enable High to Output Valid (Program)
10
2400
10
2400
µs
Chip Enable High to Output Valid (Chip Erase)
1.0
30
1.0
30
sec
Note: 1. All other timings are defined in Read AC Characteristics table.
Table 17B. Data Polling and Toggle Bit AC Characteristics (1)
(TA = 0 to 70°C, –40 to 85°C or –40 to 125°C)
M29F200T / M29F200B
Symbol
tWHQ7V
tEHQ7V
tQ7VQV
tWHQV
tEHQV
-90
-120
Standard
Interface
Standard
Interface
Parameter
Unit
Min
Max
Min
Max
Write Enable High to DQ7 Valid (Program, W Controlled)
10
2400
10
2400
µs
Write Enable High to DQ7 Valid (Chip Erase, W Controlled)
1.0
30
1.0
30
sec
Chip Enable High to DQ7 Valid (Program, E Controlled)
10
2400
10
2400
µs
Chip Enable High to DQ7 Valid (Chip Erase, E Controlled)
1.0
30
1.0
30
sec
50
ns
Q7 Valid to Output Valid (Data Polling)
35
Write Enable High to Output Valid (Program)
10
2400
10
2400
µs
Write Enable High to Output Valid (Chip Erase)
1.0
30
1.0
30
sec
Chip Enable High to Output Valid (Program)
10
2400
10
2400
µs
Chip Enable High to Output Valid (Chip Erase)
1.0
30
1.0
30
sec
Note: 1. All other timings are defined in Read AC Characteristics table.
23/33
24/33
DQ0-DQ6/
DQ8-DQ15
DQ7
W
G
E
A0-A16/
A–1
LAST WRITE
CYCLE OF
PROGRAM
OR ERASE
INSTRUCTION
DATA POLLING
READ CYCLES
tWHQ7V
tEHQ7V
tELQV
tAVQV
tQ7VQV
IGNORE
DQ7
DATA POLLING (LAST) CYCLE
tGLQV
ADDRESS (WITHIN BLOCKS)
VALID
VALID
DATA OUTPUT VALID
AI01993
MEMORY
ARRAY
READ CYCLE
M29F200T, M29F200B
Figure 10. Data Polling DQ7 AC Waveforms
M29F200T, M29F200B
Figure 11. Data Polling Flowchart
Figure 12. Data Toggle Flowchart
START
START
READ
DQ2, DQ5 & DQ6
READ DQ5 & DQ7
at VALID ADDRESS
DQ7
=
DATA
NO
NO
YES
NO
DQ5
=1
DQ5
=1
YES
YES
READ DQ2, DQ6
READ DQ7
DQ7
=
DATA
NO
DQ2, DQ6
=
TOGGLE
YES
YES
DQ2, DQ6
=
TOGGLE
NO
FAIL
NO
YES
PASS
FAIL
PASS
AI01369
AI01873
Table 18. Program, Erase Times and Program, Erase Endurance Cycles
(TA = 0 to 70°C; VCC = 5V ± 10% or 5V ± 5%)
M29F200T / M29F200B
Parameter
Unit
Typ
Typical after
100k W/E Cycles
Chip Erase (Preprogrammed)
0.7
0.9
sec
Chip Erase
2.4
2.5
sec
Boot Block Erase
0.6
sec
Parameter Block Erase
0.5
sec
Main Block (32Kb) Erase
0.9
sec
Main Block (64Kb) Erase
1.0
sec
Chip Program (Byte)
2.8
2.8
sec
Byte Program
11
11
µs
Word Program
20
20
µs
Min
Program/Erase Cycles (per Block)
100,000
cycles
25/33
26/33
DATA
TOGGLE
READ CYCLE
Note: All other timings are as a normal Read cycle.
LAST WRITE
CYCLE OF
PROGRAM
OF ERASE
INSTRUCTION
DQ0-DQ1,DQ3-DQ5,DQ7/
DQ8-DQ15
DQ6,DQ2
W
G
E
A0-A16/
A–1
DATA TOGGLE
READ CYCLE
IGNORE
STOP TOGGLE
tWHQV
tEHQV
tAVQV
MEMORY ARRAY
READ CYCLE
VALID
VALID
tGLQV
tELQV
VALID
AI01994
M29F200T, M29F200B
Figure 13. Data Toggle DQ6, DQ2 AC Waveforms
M29F200T, M29F200B
Figure 14. Block Protection Flowchart
START
BLOCK ADDRESS
on A12-A16
W = VIH
Set-up
n=0
G, A9 = VID,
E = VIL
Wait 4µs
W = VIL
Protect
Wait 100µs
W = VIH
E, G = VIH
Verify
VERIFY BLOCK PROTECTION
A0, A6 = VIL; A1 = VIH; A9 = VID
A12-A16 IDENTIFY BLOCK
E = VIL
Wait 4µs
G = VIL
Wait 60ns
VERIFY BLOCK
PROTECT STATUS
DATA
=
01h
NO
YES
A9 = VIH
++n
= 25
NO
PASS
YES
A9 = VIH
FAIL
AI01995B
27/33
M29F200T, M29F200B
Figure 15. All Blocks Unprotecting Flowchart
START
PROTECT
ALL BLOCKS
n=0
Set-up
W = VIH
E, G, A9 = VID
A12, A15 = VIH
Wait 4µs
W = VIL
Unprotect
Wait 10ms
W = VIH
Verify
E, G = VIH
E, A0 = VIL; A1, A6 = VIH; A9 = VID
A12-A16 IDENTIFY BLOCK
NEXT
BLOCK
Wait 4µs
G = VIL
Wait 60ns
VERIFY BLOCK
PROTECT STATUS
NO
NO
++n
= 1000
YES
DATA
=
00h
YES
LAST
BLK.
NO
YES
A9 = VIH
A9 = VIH
FAIL
PASS
AI01996C
28/33
M29F200T, M29F200B
ORDERING INFORMATION SCHEME
Example:
M29F200T
-55
N
1
TR
Operating Voltage
F
Option
5V ± 10%
Array Matrix
T
Top Boot
B
Bottom Boot
Speed
-55(1) 55ns
Reverse
Pinout
TR
Tape & Reel
Packing
Temp. Range
Package
N
TSOP48
12 x 20mm
M
SO44
-70 70ns
-90 90ns
R
1
0 to 70 °C
6
–40 to 85 °C
3
–40 to 125 °C
-120 120ns
Note: 1. Speed obtained with High Speed Measurement Conditions.
Devices are shipped from the factory with the memory content erased (to FFh).
For a list of available options (Speed, Package, etc...) or for further informationon any aspect of this device,
please contact the STMicroelectronics Sales Office nearest to you.
29/33
M29F200T, M29F200B
TSOP48 Normal Pinout - 48 lead Plastic Thin Small Outline, 12 x 20mm
mm
Symb
Typ
inches
Min
Max
A
Typ
Min
1.20
0.047
A1
0.05
0.15
0.002
0.006
A2
0.95
1.05
0.037
0.041
B
0.17
0.27
0.007
0.011
C
0.10
0.21
0.004
0.008
D
19.80
20.20
0.780
0.795
D1
18.30
18.50
0.720
0.728
E
11.90
12.10
0.469
0.476
-
-
-
-
L
0.50
0.70
0.020
0.028
α
0°
5°
0°
5°
N
48
e
0.50
0.020
48
CP
0.10
0.004
A2
1
N
e
E
B
N/2
D1
A
CP
D
DIE
C
TSOP-a
Drawing is not to scale.
30/33
Max
A1
α
L
M29F200T, M29F200B
TSOP48 Reverse Pinout - 48 lead Plastic Thin Small Outline, 12 x 20mm
mm
Symb
Typ
inches
Min
Max
A
Typ
Min
1.20
Max
0.047
A1
0.05
0.15
0.002
0.006
A2
0.95
1.05
0.037
0.041
B
0.17
0.27
0.007
0.011
C
0.10
0.21
0.004
0.008
D
19.80
20.20
0.780
0.795
D1
18.30
18.50
0.720
0.728
E
11.90
12.10
0.469
0.476
–
–
–
–
L
0.50
0.70
0.020
0.028
α
0°
5°
0°
5°
N
48
e
0.50
0.020
48
CP
0.10
0.004
A2
1
N
e
E
B
N/2
D1
A
CP
D
DIE
C
TSOP-b
A1
α
L
Drawing is not to scale.
31/33
M29F200T, M29F200B
SO44 - 44 lead Plastic Small Outline, 525 mils body width
mm
Symb
Typ
inches
Min
Max
A
2.42
A1
0.22
B
Typ
Min
Max
2.62
0.095
0.103
0.23
0.009
0.010
0.50
0.020
C
0.10
0.25
0.004
0.010
D
28.10
28.30
1.106
1.114
E
13.20
13.40
0.520
0.528
–
–
–
–
15.90
16.10
0.626
0.634
e
1.27
H
0.050
L
0.80
–
–
0.031
–
–
α
3°
–
–
3°
–
–
N
44
CP
44
0.10
0.004
h x 45°
A
C
B
CP
e
D
N
E
H
1
A1
SO-a
Drawing is not to scale.
32/33
α
L
M29F200T, M29F200B
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Spec ifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
 1998 STMicroelectronics - All Rights Reserved
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33/33