VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 55 A IC90 TC = 90°C ICM TC = 25°C, 1 ms SSOA (RBSOA) VGE = 15 V, TJ = 125°C, RG = 2.7 Ω Clamped inductive load, VCC= 0.8 VCES tSC (SCSOA) VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 33 Ω, non repetitive PC TC = 25°C 30 A 110 A ICM = 60 @ 0.8 VCES A 10 µs 200 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque (TO-247) 1.13/10 Nm/lb.in. TO-247 AD (IXSH) (TAB) TO-268 (D3) ( IXST) G G = Gate S = Source TO-247 TO-268 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 6 4 g g 300 °C l l l Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BVCES IC = 250 µA, VGE = 0 V 600 VGE(th) IC = 2.5 mA, VCE = VGE 4 ICES VCE = 0.8 VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) VGE = 15 V; IC = IC90 © 2001 IXYS All rights reserved International standard packages Short Circuit SOA capability High frequency IGBT New generation HDMOSTM process Applications l Symbol TAB = Drain Features l Weight (TAB) S TJ = 25°C TJ = 125°C 30N60B 30N60C l l l l V 7 V 100 1 µA mA ±100 nA l 2.0 2.5 V V l AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Advantages l l Easy to mount with 1 screw (isolated mounting screw hole) Surface mountable, high power case style Reduce assembly time and cost High power density 98519B (11/01) IXSH/IXST 30N60B IXSH/IXST 30N60C Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 10 S 3100 pF 240 pF 30 pF 100 nC 30 nC Qgc 38 nC td(on) 30 ns 30 ns Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES tri Inductive load, TJ = 25°°C td(off) IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = 4.7 Ω Note 1 30N60B 30N60C 150 90 270 150 ns ns 30N60B 30N60C 140 70 270 120 ns ns 30N60B 30N60C 1.5 0.7 2.5 mJ 1.2 mJ 35 ns 35 ns 0.5 mJ 30N60B 30N60C 270 150 ns ns tfi 30N60B 30N60C 250 140 ns Eoff 30N60B 30N60C 2.5 1.2 mJ mJ tfi Eoff td(on) tri Eon td(off) Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = 4.7 Ω Note 1 1 = Gate 2 = Collector 3 = Emitter Tab = Collector TO-268 Outline 0.62 K/W RthJC RthCK TO-247 AD Outline (TO-247) 0.25 K/W Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG. Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXSH/IXST 30N60B IXSH/IXST 30N60C Fig.1 Saturation Characteristics Fig.2 Output Characterstics 200 100 VGE = 15V TJ = 25°C TJ = 25°C VGE = 15V 13V 160 IC - Amperes 80 IC - Amperes 11V 13V 11V 60 40 9V 120 80 7V 9V 40 20 7V 5V 0 0 0 1 2 3 4 0 5 2 4 8 10 125 150 VCE - Volts VCE - Volts Fig.3 Collector-Emitter Voltage vs. Gate-Emitter Voltage Fig.4 Temperature Dependence of Output Saturation Voltage 1.6 120 VGS=15V TJ = 125°C VCE (sat) - Normalized 80 11V 60 40 IC = 60A VGE = 15V 13V 100 IC - Amperes 6 9V 20 1.4 1.2 IC = 30A 1.0 IC = 15A 0.8 7V 0.6 0 0 2 4 6 8 25 10 50 75 VCE - Volts TJ - Degrees C Fig.5 Input Admittance 140 100 Fig.6 Temperature Dependence of Breakdown and Threshold Voltage 10000 VCE = 10V f = 1Mhz Capacitance - pF IC - Amperes 120 100 80 60 TJ = 125°C 40 20 Ciss 1000 Coss 100 Crss TJ = 25°C 10 0 4 6 8 10 VGE - Volts © 2001 IXYS All rights reserved 12 14 16 0 5 10 15 20 25 VCE-Volts 30 35 40 IXSH/IXST 30N60B IXSH/IXST 30N60C Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current 1.5 Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG 7.5 2.0 TJ = 125°C E(ON) E(OFF) 0.5 2.5 E(ON) - millijoules E(ON) - millijoules 5.0 IC = 60A 1.5 6 E(ON) 1.0 4 E(ON) IC = 30A E(OFF) 0.5 2 E(ON) E(OFF) IC = 15A 0.0 0 20 40 0.0 0.0 80 60 0 0 10 Fig.9 Gate Charge Characteristic Curve 30 40 50 Fig.10 Turn-Off Safe Operating Area 100 IC =30A VCE = 300V IC - Amperes 12 VGE - Volts 20 RG - Ohms IC - Amperes 15 E(OFF) - millijoules 1.0 E(OFF) - milliJoules RG = 10Ω 8 E(OFF) TJ = 125°C 9 6 TJ = 125°C 10 RG = 4.7Ω dV/dt < 5V/ns 1 3 0 0.1 0 25 50 75 100 125 0 100 Qg - nanocoulombs 200 300 400 500 600 VCE - Volts Fig.11 Transient Thermal Impedance 1 D=0.5 ZthJC (K/W) D=0.2 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D = Duty Cycle Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025