DSK ERB32-01 High efficiency rectifier Datasheet

Diode Semiconductor Korea ERB32-01---ERB32-02
VOLTAGE RANGE: 100 --- 200 V
CURRENT: 1.2 A
HIGH EFFICIENCY RECTIFIERS
FEATURES
Low cost
Diffused junction
DO - 15
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--15,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces,0.39 grams
Dimensions in millimeters
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
ERB32 - 01
ERB32 - 02
UNITS
Maximum recurrent peak reverse voltage
VRRM
100
200
V
Maximum RMS voltage
VRMS
70
140
V
Maximum DC blocking voltage
VDC
100
200
V
Maximum average forw ard rectified current
9.5mm lead length,
@TA=75
IF(AV)
1.2
A
IFSM
50.0
A
VF
0.92
V
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous forw ard voltage
@ 1.2A
Maximum reverse current
@TA =25
at rated DC blocking voltage @TA=100
IR
5.0
50.0
A
Maximum reverse recovery time
(Note1)
t rr
50
ns
Typical junction capacitance
(Note2)
CJ
50
pF
Typical thermal resistance
(Note3)
RθJA
50
TJ
- 55 ----- + 150
TSTG
- 55 ----- + 150
Operating junction temperature range
Storage temperature range
/W
NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A.
2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
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Diode Semiconductor Korea
ERB32-01 -- ERB32-02
FIG.1--TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
N 1.
10
N 1.
t rr
+0.5A
D.U.T.
(+)
PULSE
GENERATOR
(NOTE2)
(+)
25VDC
(approx)
(-)
OSCILLOSCOPE
(NOTE1)
1
NONINDUCTIVE
0
-0.25A
(-)
-1.0A
1cm
NOTES:1.RISE TIME=7ns MAX.INPUT IMPEDANCE=1MΩ.22pF
2.RISE TIME=10ns MAX.SOURCE IMPEDANCE=50Ω.
SET TIME BASE FOR 20/30 ns/cm
FIG.3--TYPICAL JUNCTION CAPACITANCE
1.2
1
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0.8
0.6
0.4
0.2
0
0
20
40
60 80
100
120 140 150
200
100
60
40
20
10
4
TJ=25
2
1
0.1 0.2
TJ=125
8.3ms Single Half
Sine-Wave
AMPERES
60
50
40
30
20
10
0
1
2
4
8 10
20
1
2
4
10 20
40
100
40 60 80 100
NUMBER OF CYCLES AT 60Hz
FIG.5 -- TYPICAL FORWARD CHARACTERISTIC
10
1.0
AMPERES
80
70
0.4
REVERSE VOLTAGE,VOLTS
INSTANTANEOUS FORWARD CURRENT
AMBIENT TEMPERATURE.
FIG.4--PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT.
JUNCTION CAPACITANCE,pF
1.4
AMPERES
AVERAGE FORWARD RECTIFIED CURRENT.
FIG.2 --FORWARD DERATING CURVE
0.1
TJ=25
Pulse Width=300µS
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
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