Diode Semiconductor Korea ERB32-01---ERB32-02 VOLTAGE RANGE: 100 --- 200 V CURRENT: 1.2 A HIGH EFFICIENCY RECTIFIERS FEATURES Low cost Diffused junction DO - 15 Low leakage Low forward voltage drop High current capability Easily cleaned with alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO--15,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.014 ounces,0.39 grams Dimensions in millimeters Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. ERB32 - 01 ERB32 - 02 UNITS Maximum recurrent peak reverse voltage VRRM 100 200 V Maximum RMS voltage VRMS 70 140 V Maximum DC blocking voltage VDC 100 200 V Maximum average forw ard rectified current 9.5mm lead length, @TA=75 IF(AV) 1.2 A IFSM 50.0 A VF 0.92 V Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ 1.2A Maximum reverse current @TA =25 at rated DC blocking voltage @TA=100 IR 5.0 50.0 Ａ Maximum reverse recovery time (Note1) t rr 50 ns Typical junction capacitance (Note2) CJ 50 pF Typical thermal resistance (Note3) RθJA 50 TJ - 55 ----- + 150 TSTG - 55 ----- + 150 Operating junction temperature range Storage temperature range /W NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. www.diode.kr Diode Semiconductor Korea ERB32-01 -- ERB32-02 FIG.1--TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 N 1. 10 N 1. t rr +0.5A D.U.T. (+) PULSE GENERATOR (NOTE2) (+) 25VDC (approx) (-) OSCILLOSCOPE (NOTE1) 1 NONINDUCTIVE 0 -0.25A (-) -1.0A 1cm NOTES:1.RISE TIME=7ns MAX.INPUT IMPEDANCE=1MΩ.22pF 2.RISE TIME=10ns MAX.SOURCE IMPEDANCE=50Ω. SET TIME BASE FOR 20/30 ns/cm FIG.3--TYPICAL JUNCTION CAPACITANCE 1.2 1 Single Phase Half Wave 60Hz Resistive or Inductive Load 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 150 200 100 60 40 20 10 4 TJ=25 2 1 0.1 0.2 TJ=125 8.3ms Single Half Sine-Wave AMPERES 60 50 40 30 20 10 0 1 2 4 8 10 20 1 2 4 10 20 40 100 40 60 80 100 NUMBER OF CYCLES AT 60Hz FIG.5 -- TYPICAL FORWARD CHARACTERISTIC 10 1.0 AMPERES 80 70 0.4 REVERSE VOLTAGE,VOLTS INSTANTANEOUS FORWARD CURRENT AMBIENT TEMPERATURE. FIG.4--PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT. JUNCTION CAPACITANCE,pF 1.4 AMPERES AVERAGE FORWARD RECTIFIED CURRENT. FIG.2 --FORWARD DERATING CURVE 0.1 TJ=25 Pulse Width=300µS 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2 INSTANTANEOUS FORWARD VOLTAGE, VOLTS www.diode.kr