isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF034 DESCRIPTION ·Drain Current ID=25A@ TC=25℃ ·Drain Source Voltage: VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.05Ω(Max) ·Simple Drive Requirements APPLICATIONS ·Switching power supplies ·Motor controls,Inverters and Choppers ·Audio amplifiers and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT 60 V ±20 V Drain Current-continuous@ TC=25℃ 25 A Total Dissipation@TC=25℃ 75 W Max. Operating Junction Temperature 150 ℃ -65~150 ℃ MAX UNIT 1.67 ℃/W 30 ℃/W VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Ptot Tj Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc website：www.iscsemi.cn PDF pdfFactory Pro 1 www.fineprint.cn isc & iscsemi is registered trademark isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF034 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=1mA 60 VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA 2.0 RDS(ON) Drain-Source On-stage Resistance IGSS TYPE MAX UNIT V 4.0 V VGS=10V; ID=16A 0.05 Ω Gate Source Leakage Current VGS=±20V;VDS=0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=48V; VGS=0 25 µA VSD Diode Forward Voltage IS=25A; VGS=0 1.8 V Ciss Input Capacitance 1300 VDS=25V; Crss Reverse Transfer Capacitance VGS=0V; 100 pF fT=1MHz Coss tr td(on) Output Capacitance 650 Rise Time Turn-on Telay Time 110 ID=25A; 21 VDD=30V; tf td(off) Fall Time Turn-off Delay Time isc website：www.iscsemi.cn PDF pdfFactory Pro RG=7.5Ω ns 80 53 2 www.fineprint.cn isc & iscsemi is registered trademark