CEM8401 Feb. 2003 Dual Enhancement Mode Field Effect Transistor ( N and P Channel) 5 FEATURES 30V , 7.5A , RDS(ON)=21m Ω @VGS=10V. RDS(ON)=30mΩ @VGS=4.5V. -30V , -5.0A , RDS(ON)=50m Ω @VGS=-10V. RDS(ON)=75mΩ @VGS=-4.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 High power and current handing capability. Surface Mount Package. SO-8 4 G2 1 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS Ć20 Ć20 V Drain Current-Continuous a -Pulsed ID Ć7.5 Ć5.0 A IDM Ć30 Ć20 A Drain-Source Diode Forward Current a IS 2.3 -2.3 A Maximum Power Dissipation a PD 2.0 TJ, TSTG -55 to 150 Operating Junction and Storage Temperature Range W C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a RįJA 5-190 62.5 C/W CEM8401 N-Channel ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter Condition Symbol Min Typ C Max Unit 5 OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V Gate-Body Leakage IGSS VGS = Ć20V, VDS = 0V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA Drain-Source On-State Resistance RDS(ON) 30 V 1 µA Ć100 nA 3 V ON CHARACTERISTICS b ID(ON) gFS On-State Drain Current Forward Transconductance 1 VGS = 10V, ID = 9A 18 21 mΩ VGS = 4.5V, ID = 7.4A 25 30 mΩ VDS = 5V, VGS = 10V VDS = 15V, ID = 9A A 15 16 S 857 PF 343 PF 105 PF c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS =25V, VGS = 0V f =1.0MHZ c SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time tD(ON) tr tD(OFF) VDD = 15V, ID = 3.5A, VGS = 10V, RGEN = 6 Ω 22 45 ns 34 70 ns 43 90 ns Fall Time tf 18 35 ns Total Gate Charge Qg 28 35 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS =15V, ID = 4.7A, VGS =10V 5-191 4 nC 7.5 nC CEM8401 P-Channel ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter 5 Min Typ C Max Unit Symbol Condition Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS VDS = -30V, VGS = 0V -1 µA Gate-Body Leakage IGSS VGS =Ć20V, VDS = 0V Ć100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -3 V Drain-Source On-State Resistance RDS(ON) OFF CHARACTERISTICS -30 V ON CHARACTERISTICS b ID(ON) gFS On-State Drain Current Forward Transconductance -1 VGS = -10V, ID = -4.2A 40 50 mΩ VGS = -4.5V, ID = -3.4A 65 75 mΩ VDS = -5V, VGS = -10V VDS = -15V, ID = -4.2A A -15 7 S 1124 PF 488 PF 150 PF c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS =-15V, VGS = 0V f =1.0MHZ c SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time tD(ON) tr tD(OFF) VDD = -15V, ID = -4.2A, VGEN = -10V, RGEN = 6 Ω 21 40 ns 23 45 ns 33 65 ns Fall Time tf 60 100 ns Total Gate Charge Qg 30 36 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS =-15V, ID = -4.2A, VGS =-10V 5-192 4 nC 7.5 nC CEM8401 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter C Min Typ Max Unit Condition Symbol DRAIN-SOURCE DIODE CHARACTERISTICS b Diode Forward Voltage 5 VGS = 0V, Is = 5.1A N-Ch VGS = 0V, Is =-3.6A P-Ch VSD 0.8 -0.8 1.2 -1.2 Notes a.Surface Mounted on FR4 Board, t ś10sec. b.Pulse Test:Pulse Width ś300ijs, Duty Cycle ś 2%. c.Guaranteed by design, not subject to production testing. N-Channel 20 30 -55 C VGS=10 thru 4V 24 ID, Drain Current (A) ID, Drain Current (A) 16 12 8 VGS=3V 4 0 12 25 C 6 Tj=125 C 0 0.5 0 1.5 1.0 1 2.0 4 3 2 5 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 1.80 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 1200 1000 Ciss C, Capacitance (pF) 18 800 600 Coss 400 200 Crss 0 0 5 10 15 20 25 30 1.60 ID=9.0A VGS=10V 1.40 1.20 1.00 0.80 0.60 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature( C) VDS, Drain-to Source Voltage (V) Figure 4. On-Resistance Variation with Temperature Figure 3. Capacitance 5-193 V VDS=VGS ID=250ӴA 1.20 1.10 1.00 0.90 0.80 0.70 0.60 -50 -25 0 25 50 75 100 125 150 BVDSS, Normalized Drain-Source Breakdown Voltage 1.30 1.15 ID=250ӴA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 25 50 75 100 125 150 Figure 6. Breakdown Voltage Variation with Temperature Figure 5. Gate Threshold Variation with Temperature 25 20 10 20 Is, Source-drain current (A) gFS, Transconductance (S) 0 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) 15 10 5 VDS=15V VGS=0V 1 0.1 0 0 5 10 15 20 0.4 IDS, Drain-Source Current (A) 0.6 1.2 1.0 0.8 VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current Figure 8. Body Diode Forward Voltage Variation with Source Current 10 8 VDS=15V ID=4.7A ID, Drain Current (A) VGS, Gate to Source Voltage (V) 5 Vth, Normalized Gate-Source Threshold Voltage CEM8401 6 4 2 10 1 8 16 24 32 Qg, Total Gate Charge (nC) N) Lim it 1m 10 10 10 10 0 DC 10 -1 10 0 (O 1s -2 0 S RD 0m s ms s s TA=25 C Tj=150 C Single Pulse 10 -1 10 1 10 0 10 VDS, Drain-Source Voltage (V) Figure 10. Maximum Safe Operating Area Figure 9. Gate Charge 5-194 1 CEM8401 P-Channel 15 20 -55 C -VGS=10 thru 5V 12 -VGS=4V -ID, Drain Current (A) -ID, Drain Current (A) 16 12 8 -VGS=3V 4 9 25 C 3 0 Tj=125 C 0 0 1 2 3 4 5 1 6 5 -VGS, Gate-to-Source Voltage (V) Figure 11. Output Characteristics Figure 12. Transfer Characteristics 1.80 RDS(ON), On-Resistance(Ohms) 1500 Ciss 1200 900 600 Coss 300 Crss 0 0 5 10 15 20 25 30 1.60 ID=-4.2A VGS=-10V 1.40 1.20 1.00 0.80 0.60 -50 -25 -VDS, Drain-to Source Voltage (V) VDS=VGS ID=-250ijA 1.20 1.10 1.00 0.90 0.80 0.70 0.60 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Figure 15. Gate Threshold Variation with Temperature 5-195 25 50 75 100 125 150 Figure 14. On-Resistance Variation with Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.30 0 TJ, Junction Temperature( C) Figure 13. Capacitance Vth, Normalized Gate-Source Threshold Voltage 4 3 2 -VDS, Drain-to-Source Voltage (V) 1800 C, Capacitance (pF) 5 6 1.15 ID=-250ijA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Figure 16. Breakdown Voltage Variation with Temperature CEM8401 P-Channel 20 16 -Is, Source-drain current (A) gFS, Transconductance (S) 5 12 8 4 VDS=-15V 4 8 12 1.05 1.00 1 0.95 0.90 0.1 0.85 0 0 1.15 20 10 VGS=0V 1.10 ID=250ijA 0.4 -25 16 00.6 25 50 1.2 1.0 125 150 0.8 75 100 -VSD, Body Diode Forward Voltage (V) -IDS, Drain-Source Current (A) Figure 18. Body Diode Forward Voltage Variation with Source Current Figure 17. Transconductance Variation with Drain Current VDS=-15V ID=-4.2A 8 -ID, Drain Current (A) VGS, Gate to Source Voltage (V) 10 6 4 2 10 1 10 8 16 24 32 N) Lim it 10 1s 0 10 DC 10 -1 10 0 S(O 10 -2 0 RD 0m 1m s ms s s TA=25 C Tj=150 C Single Pulse 10 -1 10 1 10 0 -VDS, Drain-Source Voltage (V) Qg, Total Gate Charge (nC) Figure 20. Maximum Safe Operating Area Figure 19. Gate Charge 5-196 10 1 CEM8401 VDD t on V IN D td(off) 5 tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) RL 10% INVERTED 10% G 90% VIN S 50% 50% 10% PULSE WIDTH Figure 22. Switching Waveforms Figure 21. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 102 0 D=0.5 1 Duty Cycle=0.5 0.2 10 -1 0.1 0.2 0.05 10 PDM 0.1 0.02 0.1 -2 t1 t2 t2 1. RӰJA (t)=r * R(t)=r ӰJA (t) * RįJA 1. (t) RįJA 2. RӰJA=See Datasheet 2. R įJA=See Datasheet RӰJA (t)PDM* RįJA (t) 3. TJM-TA =3.P*TJMTA = 4. Duty Cycle, D=t1/t2 4. Duty Cycle, D=t1/t2 0.02 Pulse Single Single Pulse 0.01 10 PDM t1 0.05 0.01 -3 -4 10 -3-3 10 10 -2 -2 10 10 10 -1 10 -1 10 0 1 10 1 Square Wave Pulse Duration (sec) Figure 13. 23. Normalized Thermal Transient Impedance Curve 5-197 10 10 2 100