HiPerFETTM Power MOSFETs Q-Class IXFN 21N100Q Single MOSFET Die VDSS = 1000 V = 21 A ID25 RDS(on) = 0.50 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 21 A IDM TC = 25°C, pulse width limited by TJM 84 A IAR TC = 25°C 21 A EAR TC = 25°C 60 mJ 2.5 J 5 V/ns EAS dv/dt PD IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 520 W -55 to +150 °C TJM 150 °C Tstg -55 to +150 °C 2500 3000 V~ V~ 1.5/13 1.5/13 Nm/lb.in. Nm/lb.in. 30 g TJ VISOL 50/60 Hz, RMS IISOL≤ 1 mA t = 1 min t=1s Md Mounting torque Terminal connection torque Weight S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive -faster switching • Unclamped Inductive Switching (UIS) rated • Low RDS (on) • Fast intrinsic diode • International standard package • miniBLOC with Aluminium nitride isolation for low thermal resistance • Low terminal inductance (<10 nH) and stray capacitance to heatsink (<35pf) • Molding epoxies meet UL 94 V-0 flammability classification Symbol Test Conditions VDSS VGS = 0 V, ID = 1 mA VGS(th) VDS = VGS, ID = 1.5 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2001 IXYS All rights reserved V 4.5 V ±100 nA 100 2 µA mA 0.50 Ω Applications • DC-DC converters • • • • Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls Advantages • Easy to mount • • Space savings High power density 98762A (12/01) IXFN 21N100Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 20 V; ID = 0.5 • ID25, pulse test 16 22 S 5900 pF 550 pF Crss 90 pF td(on) 21 ns Ciss Coss tr 18 td(off) VGS = 0 V, VDS = 25 V, f = 1 MHz VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1 Ω (External) tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 18 ns 60 ns 12 ns Inches Min. Max. 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 38 nC C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 75 nC E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 K/W G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 K/W J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 0.05 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Test Conditions IS VGS = 0 V 21 A ISM Repetitive; pulse width limited by TJM 84 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V 250 ns µC A IF = IS, -di/dt = 100 A/µs, VR = 100 V Millimeter Min. Max. A B Symbol trr QRM IRM Dim. nC 0.24 Source-Drain Diode M4 screws (4x) supplied 170 RthJC RthCK miniBLOC, SOT-227 B 1.4 8 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXFN 21N100Q 35 35 TJ = 25OC 20 ID - Amperes ID - Amperes VGS = 9V 8V 7V 6V 25 TJ = 125OC 30 30 5V 15 10 VGS = 9V 8V 7V 6V 25 20 15 10 5V 5 5 4V 4V 0 0 0 5 10 15 20 0 5 10 VDS - Volts 20 25 30 VDS - Volts Fig.2 Output Characteristics @ Tj = 125°C Fig.1 Output Characteristics @ Tj = 25°C 2.6 2.8 VGS = 10V VGS = 10V 2.4 RDS(ON) - Normalized RDS(ON) - Normalized 15 TJ = 125OC 2.0 1.6 1.2 2.2 ID = 21A 1.8 ID =10.5A 1.4 TJ = 25OC 1.0 25 0.8 0 10 20 30 50 75 100 125 150 TJ - Degrees C ID - Amperes Fig.3 RDS(on) vs. Drain Current Fig.4 Temperature Dependence of Drain to Source Resistance 24 25 20 20 TJ = 150 C ID - Amperes ID - Amperes o 15 10 16 12 TJ = 125OC 8 TJ = 25oC 5 4 0 -50 -25 0 25 50 75 100 125 150 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 TC - Degrees C VGS - Volts Fig.5 Drain Current vs. Case Temperature Fig.6 Drain Current vs Gate Source Voltage © 2001 IXYS All rights reserved IXFN 21N100Q 30000 10 VDS = 500 V ID = 21 A IG = 10 mA Ciss 10000 Capacitance - pF VGS - Volts 8 6 4 f = 100kHz Coss 1000 Crss 2 100 0 0 40 80 120 160 0 200 5 10 15 20 25 30 35 40 VDS - Volts Gate Charge - nC Fig.7 Gate Charge Characteristic Curve Fig.8 Capacitance Curves 80 ID - Amperes 60 40 TJ = 125OC TJ = 25OC 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD - Volts Fig.9 Drain Current vs Drain to Source Voltage R(th)JC - K/W 1.000 0.100 0.010 0.001 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds Fig.10 Transient Thermal Impedance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025