2N3418S thru 2N3421S Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/393 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. These devices are also available in TO-5 and low profile U4 packages. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 2N3418 through 2N3421 series. • JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/393. • RoHS compliant versions available (commercial grade only). • V CE(sat) = 0.25 V @ Ic = 1 A. • Rise time t r = 0.22 µs max @ I C = 1.0 A, I B1 = 100 mA. • Fall time t f = 0.20 µs max @ I C = 1.0 A, I B2 = -10 0 mA. TO-39 (TO-205AD) Package Also available in: APPLICATIONS / BENEFITS TO-5 package • General purpose transistors for medium power applications requiring high frequency switching and low package profile. • Military and other high-reliability applications. (leaded) 2N3418 – 2N3421 U4 package (surface mount) 2N3418U4 – 2N3421U4 MAXIMUM RATINGS Symbol 2N3418S 2N3420S 2N3419S 2N3421S Unit Collector-Emitter Voltage V CEO 60 80 V Collector-Base Voltage V CBO 85 125 V Emitter-Base Voltage V EBO 8 V IC 3 5 A PD 1 5 W TJ , Tstg -65 to +200 °C Parameters / Test Conditions Collector Current tp <= 1 ms, duty cycle <= 50% Total Power Dissipation (1) @ TA = +25 °C (2) @ TC = +100 °C Operating & Storage Junction Temperature Range Notes: 1. Derate linearly 5.72 mW/°C for TA > +25 °C. 2. Derate linearly 150 mW/°C for TC > +100 °C. MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0192-1, Rev. 1 (111684) ©2011 Microsemi Corporation Page 1 of 6 2N3418S thru 2N3421S MECHANICAL and PACKAGING • • • CASE: Hermetically sealed, kovar base, nickel cap. MARKING: Part number, date code, manufacturer’s ID. POLARITY: See Package Dimensions on last page. PART NOMENCLATURE JAN 2N3418 S (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant Short-Leaded package JEDEC type number (see Electrical Characteristics table) Symbol C obo I CEO I CEX I EBO h FE TA V CEO V CBO V EBO SYMBOLS & DEFINITIONS Definition Common-base open-circuit output capacitance. Collector cutoff current, base open. Collector cutoff current, circuit between base and emitter. Emitter cutoff current, collector open. Common-emitter static forward current transfer ratio. Ambient temperature, free-air temperature. Collector-emitter voltage, base open. Collector-emitter voltage, emitter open. Emitter-base voltage, collector open. T4-LDS-0192-1, Rev. 1 (111684) ©2011 Microsemi Corporation Page 2 of 6 2N3418S thru 2N3421S ELECTRICAL CHARACTERISTICS (T A = +25°C, unless otherwise noted) OFF CHARACTERISTICS Parameters / Test Conditions Symbol Min. Collector-Emitter Breakdown Current I C = 50 mA, I B = 0 2N3418S, 2N3420S 2N3419S, 2N3421S V (BR)CEO 60 80 Max. Unit V Collector-Emitter Cutoff Current V BE = -0.5 V, V CE = 80 V V BE = -0.5 V, V CE = 120 V 2N3418S, 2N3420S 2N3419S, 2N3421S I CEX 0.3 0.3 µA Collector-Base Cutoff Current V CE = 45 V, I B = 0 V CE = 60 V, I B = 0 2N3418S, 2N3420S 2N3419S, 2N3421S I CEO 5.0 5.0 µA I EBO 0.5 10 µA Max. Unit Emitter-Base Cutoff Current V EB = 6.0 V, I C = 0 V EB = 8.0 V, I C = 0 ON CHARACTERISTICS (1) Parameters / Test Conditions Forward-Current Transfer Ratio I C = 100 mA, V CE = 2.0 V Symbol Min. 2N3418S, 2N3419S 2N3420S, 2N3421S 20 40 I C = 1.0 A, V CE = 2.0 V 2N3418S, 2N3419S 2N3420S, 2N3421S 20 40 I C = 2.0 A, V CE = 2.0 V 2N3418S, 2N3419S 2N3420S, 2N3421S 15 30 I C = 5.0 A, V CE = 5.0 V 2N3418S, 2N3419S 2N3420S, 2N3421S 10 15 60 120 h FE Collector-Emitter Saturation Voltage I C = 1.0 A, I B = 0.1 A I C = 2.0 A, I B = 0.2 A Base-Emitter Saturation Voltage I C = 1.0 A, I B = 0.1 A I C = 2.0 A, I B = 0.2 A V CE(sat) DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude of Common Emitter Small-Signal Short Circuit Forward Current Transfer Ratio I C = 0.1 A, V CE = 10 V, f = 20 MHz Output Capacitance V CB = 10 V, I E = 0, 100 kHz ≤ f ≤ 1.0 MHz 0.25 0.5 V V BE(sat) 0.6 0.7 1.2 1.4 V Symbol Min. Max. Unit |h fe | 1.3 0.8 C obo 150 pF NOTES: (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%. T4-LDS-0192-1, Rev. 1 (111684) ©2011 Microsemi Corporation Page 3 of 6 2N3418S thru 2N3421S ELECTRICAL CHARACTERISTICS (T A = +25°C, unless otherwise noted) continued SWITCHING CHARACTERISTICS Parameters / Test Conditions (for all symbols) Delay Time Rise Time Storage Time Fall Time Turn-Off Time V BE(off) = -3.7 V, I C = 1.0 A, I B1 = 100 mA V BE(off) = -3.7 V, I C = 1.0 A, I B2 = -100 mA V BE(off) = -3.7 V, I C = 1.0 A, I B2 = -100 mA, R L = 20 Ω Symbol Min. Max. td tr ts tf 0.08 0.22 1.10 0.20 t off 1.20 Unit µs µs µs COLLECTOR CURRENT IC (AMPERES) SAFE OPERATING AREA (See graph below and reference MIL-STD-750, method 3053) DC Test T C = +100 °C, 1 cycle, t > 1.0 s Test 1 V CE = 5.0 V, I C = 3.0 A Test 2 V CE = 37 V, I C = 0.4 A Test 3 V CE = 60 V, I C = 0.185 A 2N3418S, 2N3420S V CE = 80 V, I C = 0.12 A 2N3419S, 2N3421S Clamped Switching T A = +25 °C, I B = 0.5 A, I C = 3.0 A COLLECTOR TO EMITTER VOLTAGE V CE (VOLTS) Maximum Safe Operating Area (continuous dc) T4-LDS-0192-1, Rev. 1 (111684) ©2011 Microsemi Corporation Page 4 of 6 2N3418S thru 2N3421S DC Operation Maximum Rating (W) GRAPHS o TC ( C) (Case) FIGURE 1 Temperature-Power Derating Curve o THETA (oC/W) NOTES: Thermal Resistance Junction to Case = 4.5 C/W o Max Finish-Alloy Temp = 175.0 C TIME (s) FIGURE 2 Maximum Thermal Impedance NOTE: T C = +25 °C, Thermal Resistance R θJC = 4.5 °C/W T4-LDS-0192-1, Rev. 1 (111684) ©2011 Microsemi Corporation Page 5 of 6 2N3418S thru 2N3421S PACKAGE DIMENSIONS CD CH HD Dimensions Inches Millimeters Min Max Min Max .305 .335 7.75 8.51 .240 .260 6.10 6.60 .335 .370 8.51 9.40 LC LD LL LU L1 L2 P Q TL TW r α .200 TP .016 .021 .500 .750 See notes .050 .250 .100 .040 .029 .045 .028 .034 .010 45° TP Symbol 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 5.08 TP 0.41 0.53 12.7 19.05 7, 13, 14 1.27 6.35 2.54 1.02 0.74 1.14 0.71 .86 0.25 45° TP Note 6 7 7 7 5 4 3, 10 9, 10 11 6 Dimensions are in inches. Millimeters are given for general information only. Symbol TL is measured from HD maximum. Details of outline in this zone are optional. Symbol CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. Leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of TP relative to tab. Device may be measured by direct methods or by gauge. Symbol LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL minimum. Lead number 3 is electrically connected to case. Beyond r maximum, TW shall be held for a minimum length of .021 inch (0.53 mm). Lead number 4 omitted on this variation. Symbol r applied to both inside corners of tab. For transistor types 2N3418S, 2N3419S, 2N3420S, 2N3421S, LL is .500 (12.70 mm) minimum and .750 (19.05 mm) maximum. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. Lead 1 is emitter, lead 2 is base, and lead 3 is collector. T4-LDS-0192-1, Rev. 1 (111684) ©2011 Microsemi Corporation Page 6 of 6