IRF9630, SiHF9630 Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • • - 200 RDS(on) (Max.) (Ω) VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION TO-220 Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. G S G D D P-Channel MOSFET ORDERING INFORMATION Package TO-220 IRF9630PbF SiHF9630-E3 IRF9630 SiHF9630 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS - 200 Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at - 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta ID IDM Linear Derating Factor UNIT V - 6.5 - 4.0 A - 26 0.59 W/°C EAS 500 mJ Currenta IAR - 6.4 A Repetitive Avalanche Energya EAR 7.4 mJ Single Pulse Avalanche Energyb Repetitive Avalanche Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw PD 74 W dV/dt - 5.0 V/ns TJ, Tstg - 55 to + 150 300d °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 50 V, starting TJ = 25 °C, L = 17 mH, RG = 25 Ω, IAS = - 6.5 A (see fig. 12). c. ISD ≤ - 6.5 A, dI/dt ≤ 120 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. www.kersemi.com 1 IRF9630, SiHF9630 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 1.7 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = - 250 µA - 200 - - V ΔVDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.24 - V/°C VGS(th) VDS = VGS, ID = - 250 µA - 2.0 - - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 200 V, VGS = 0 V - - - 100 VDS = - 160 V, VGS = 0 V, TJ = 125 °C - - - 500 Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs ID = - 3.9 Ab VGS = - 10 V VDS = - 50 V, ID = - 3.9 Ab µA - - 0.80 Ω 2.8 - - S - 700 - - 200 - - 40 - - - 29 - - 5.4 - - 15 Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5 VGS = - 10 V ID = - 6.5 A, VDS = - 160 V, see fig. 6 and 13b Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) - 12 - tr - 27 - - 28 - - 24 - - 4.5 - Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance td(off) VDD = - 100 V, ID = - 6.5 A, rG = 12 Ω, rD = 15 Ω, see fig. 10b tf LD LS Between lead, 6 mm (0.25") from package and center of die contact D pF nC ns nH G - 7.5 - - - - 6.5 - - - 26 - - - 6.5 - 200 300 ns - 1.9 2.9 µC S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = - 6.5 A, VGS = 0 Vb TJ = 25 °C, IF = - 6.5 A, dI/dt = 100 A/µsb V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. www.kersemi.com 2 IRF9630, SiHF9630 Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 4 - Normalized On-Resistance vs. Temperature www.kersemi.com 3 IRF9630, SiHF9630 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area www.kersemi.com 4 IRF9630, SiHF9630 RD VDS VGS D.U.T. RG + - VDD - 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit td(on) td(off) tf tr VGS 10 % 90 % VDS Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case IAS L Vary tp to obtain required IAS VDS VDS D.U.T RG + V DD VDD IAS - 10 V tp 0.01 Ω A tp VDS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms www.kersemi.com 5 IRF9630, SiHF9630 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG - 10 V 12 V 0.2 µF 0.3 µF QGS - QGD D.U.T. VG + VDS VGS - 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.kersemi.com 6 Fig. 13b - Gate Charge Test Circuit IRF9630, SiHF9630 Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - RG + • dV/dt controlled by RG • ISD controlled by duty factor "D" • D.U.T. - device under test + - VDD Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D= P.W. Period VGS = - 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % * ISD VGS = - 5 V for logic level and - 3 V drive devices Fig. 14 - For P-Channel www.kersemi.com 7