SavantIC Semiconductor Product Specification BDV64/64A/64B/64C Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BDV65/65A/65B/65C ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in general purpose amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS BDV64 VCBO VCEO VEBO Collector-base voltage Collector-emitter voltage Emitter-base voltage BDV64A VALUE -60 Open emitter -80 BDV64B -100 BDV64C -120 BDV64 -60 BDV64A UNIT Open base -80 BDV64B -100 BDV64C -120 Open collector V V -5 V IC Collector current -12 A ICM Collector current-peak -15 A IB Base current -0.5 A PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 125 Ta=25 3.5 W SavantIC Semiconductor Product Specification BDV64/64A/64B/64C Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS BDV64 V(BR)CEO VCEsat VBE ICBO ICEO Collector-emitter breakdown voltage MIN TYP. MAX UNIT -60 BDV64A -80 IC=-30mA, IB=0 V BDV64B -100 BDV64C -120 Collector-emitter saturation voltage IC=-5A ,IB=-20mA -2.0 V Base-emitter on voltage IC=-5A ; VCE=-4V -2.5 V BDV64 VCB=-60V, IE=0 VCB=-30V, IE=0;TC=150 -0.4 -2.0 BDV64A VCB=-80V, IE=0 VCB=-40V, IE=0;TC=150 -0.4 -2.0 BDV64B VCB=-100V, IE=0 VCB=-50V, IE=0;TC=150 -0.4 -2.0 BDV64C VCB=-120V, IE=0 VCB=-60V, IE=0;TC=150 -0.4 -2.0 BDV64 VCE=-30V, IB=0 BDV64A VCE=-40V, IB=0 BDV64B VCE=-50V, IB=0 BDV64C VCE=-60V, IB=0 Collector cut-off current Collector cut-off current IEBO Emitter cut-off current VEB=-5V; IC=0 hFE DC current gain IC=-5A ; VCE=-4V VEC Diode forward voltage IE=-10A mA -2 mA -5 mA -3.5 V 1000 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.0 2 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BDV64/64A/64B/64C PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.1mm) 3