QFET FQD6N40C / FQU6N40C ® 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. • • • • • • • 4.5A, 400V, RDS(on) = 1.0 Ω @VGS = 10 V Low gate charge ( typical 16nC) Low Crss ( typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS Compliant FQD6N40C / FQU6N40C October 2008 D ! D ● G S D-PAK FQD Series G D S G! I-PAK ◀ ▲ ● ● FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQD6N40C / FQU6N40C 400 Units V 4.5 A - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) 2.7 A 18 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 270 mJ IAR Avalanche Current (Note 1) 4.5 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C)* (Note 1) 4.8 4.5 2.5 mJ V/ns W 48 0.38 -55 to +150 W W/°C °C 300 °C dv/dt PD TJ, TSTG TL (Note 3) Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient.* RθJA Thermal Resistance, Junction-to-Ambient. Typ -- Max 2.6 Units °C/W -- 50 °C/W -- 110 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2008 Fairchild Semiconductor Internationa Rev. A1, October 2008 Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 400 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.54 IDSS IGSSF IGSSR VDS = 400 V, VGS = 0 V -- -- 1 µA VDS = 320 V, TC = 125°C -- -- 10 µA Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 2.25A -- 0.83 1 Ω gFS Forward Transconductance VDS = 40 V, ID = 2.25A -- 4.7 -- S -- 480 625 pF -- 80 105 pF -- 15 20 pF -- 13 35 ns -- 65 140 ns -- 21 55 ns -- 38 85 ns -- 16 20 nC (Note 4) FQD6N40C / FQU6N40C Electrical Characteristics Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 200 V, ID = 6A, RG = 25 Ω (Note 4, 5) VDS = 320 V, ID = 6A, VGS = 10 V (Note 4, 5) -- 2.3 -- nC -- 8.2 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 4.5 A ISM -- -- 18 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 4.5 A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time -- 230 -- ns Qrr Reverse Recovery Charge -- 1.7 -- µC VGS = 0 V, IS = 6 A, dIF / dt = 100 A/µs (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 13.7 mH, IAS = 6 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 6A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2008 Fairchild Semiconductor Internationa Rev. A1, October 2008 FQD6N40C / FQU6N40C Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 o 150 C o 25 C o 0 -55 C 10 ※ Notes : 1. VDS = 40V 2. 250μ s Pulse Test ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ -1 10 -1 -1 0 10 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 3.5 1 10 IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 3.0 VGS = 10V 2.5 2.0 1.5 VGS = 20V 1.0 0 10 150℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 25℃ ※ Note : TJ = 25℃ -1 0.5 0 5 10 15 20 10 0.2 0.4 0.6 ID, Drain Current [A] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 1200 0.8 1.0 1.2 1.4 VSD, Source-Drain voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1000 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 12 VDS = 80V 10 Capacitance [pF] Ciss Coss 600 400 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz Crss 200 VGS, Gate-Source Voltage [V] VDS = 200V 800 8 VDS = 320V 6 4 2 ※ Note : ID = 6A 0 0 -1 10 0 10 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2008 Fairchild Semiconductor Internationa 0 5 10 15 20 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics Rev. A1, October 2008 FQD6N40C / FQU6N40C Typical Characteristics (Continued) 1.2 3.0 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 2.25 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature o 2 5 10 Operation in This Area is Limited by R DS(on) 1 100 µs 4 10 µs ID, Drain Current [A] ID, Drain Current [A] 10 1 ms 3 10 ms 0 DC 10 2 -1 10 ※ Notes : 1 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -2 10 0 10 1 2 10 0 25 3 10 10 50 VDS, Drain-Source Voltage [V] (t), T h e r m a l R e s p o n s e 100 125 150 Figure 10. Maximum Drain Current vs Case Temperature Figure 9. Maximum Safe Operating Area D = 0 .5 10 ※ N o te s : 1 . Z θ J C (t) = 2 .6 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 0 0 .2 0 .1 0 .0 5 10 -1 0 .0 1 10 PDM 0 .0 2 Z θ JC 75 TC, Case Temperature [℃] -5 t1 s in g le p u ls e 10 -4 10 t2 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11. Transient Thermal Response Curve ©2008 Fairchild Semiconductor Internationa Rev. A1, October 2008 FQD6N40C / FQU6N40C Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp ©2008 Fairchild Semiconductor Internationa ID (t) VDS (t) VDD tp Time Rev. A1, October 2008 FQD6N40C / FQU6N40C Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2008 Fairchild Semiconductor Internationa Rev. A1, October 2008 FQD6N40C / FQU6N40C Mechanical Dimensions D - PAK Dimensions in Millimeters ©2008 Fairchild Semiconductor Internationa Rev. A1, October 2008 FQD6N40C / FQU6N40C Mechanical Dimensions I - PAK Dimensions in Millimeters ©2008 Fairchild Semiconductor Internationa Rev. 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