IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 4.4 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 8.9 Configuration Single D DPAK (TO-252) IPAK (TO-251) Dynamic dV/dt Rating Repetitive Avalanche Rated Surface Mount (IRFRC20/SiHFRC20) Straight Lead (IRFUC20/SiHFUC20) Available in Tape and Reel Fast Switching Ease of Paralleling Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFUC/SiHFUC series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surcace mount applications. G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb DPAK (TO-252) IRFRC20PbF SiHFRC20-E3 IRFRC20 SiHFRC20 DPAK (TO-252) IRFRC20TRLPbFa SiHFRC20TL-E3a IRFRC20TRLa SiHFRC20TLa DPAK (TO-252) IRFRC20TRPbFa SiHFRC20T-E3a IRFRC20TRa SiHFRC20Ta DPAK (TO-252) IRFRC20TRRPbFa SiHFRC20TR-E3a IRFRC20TRRa SiHFRC20TRa IPAK (TO-251) IRFUC20PbF SiHFUC20-E3 IRFUC20 SiHFUC20 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) SYMBOL VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM EAS IAR EAR TC = 25 °C TA = 25 °C PD dV/dt TJ, Tstg for 10 s LIMIT 600 ± 20 2.0 1.3 8.0 0.33 0.020 450 2.0 4.2 42 2.5 3.0 - 55 to + 150 260d UNIT V A W/°C mJ A mJ W V/ns °C www.kersemi.com 1 IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 THERMAL RESISTANCE RATINGS SYMBOL MIN. TYP. MAX. Maximum Junction-to-Ambient PARAMETER RthJA - - 110 Maximum Junction-to-Ambient (PCB Mount)a RthJA - - 50 Maximum Junction-to-Case (Drain) RthJC - - 3.0 UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 µA 600 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.88 - V/°C VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V nA Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance IGSS IDSS RDS(on) gfs VGS = ± 20 V - - ± 100 VDS = 600 V, VGS = 0 V - - 100 VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 500 - - 4.4 Ω 1.4 - - S - 350 - - 48 - - 8.6 - ID = 1.2 Ab VGS = 10 V VDS = 50 V, ID = 1.2 A µA Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5 VGS = 10 V ID = 2.0 A, VDS = 360 V, see fig. 6 and 13b - - 18 - - 3.0 Gate-Drain Charge Qgd - - 8.9 Turn-On Delay Time td(on) - 10 - - 23 - - 30 - - 25 - - 4.5 - - 7.5 - - - 2.0 - - 8.0 Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance tr td(off) VDD = 300 V, ID = 2.0 A, RG = 18 Ω, RD = 135 Ω, see fig. 10b tf LD LS Between lead, 6 mm (0.25") from package and center of die contact pF nC ns D nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton www.kersemi.com 2 MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 2.0 A, VGS = 0 Vb TJ = 25 °C, IF = 2.0 A, dI/dt = 100 A/µsb - - 1.6 V - 290 580 ns - 0.67 1.3 µC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature www.kersemi.com 3 IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.kersemi.com 4 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 RD VDS VGS D.U.T. RG + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature tr td(off) tf Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case www.kersemi.com 5 IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T RG + - I AS V DD VDS 10 V 0.01 Ω tp Fig. 12a - Unclamped Inductive Test Circuit IAS Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG VGS 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.kersemi.com 6 Fig. 13b - Gate Charge Test Circuit IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 Peak Diode Recovery dV/dt Test Circuit + D.U.T Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - • • • • RG dV/dt controlled by R G Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test Driver gate drive P.W. + Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices Fig. 14 - For N-Channel www.kersemi.com 7