Fairchild BC638 Pnp epitaxial silicon transistor Datasheet

BC638 PNP Epitaxial Silicon Transistor
BC638
PNP Epitaxial Silicon Transistor
Switching and Amplifier Applications
• Complement to BC637
TO-92
1
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings T
a
Symbol
= 25°C unless otherwise noted
Parameter
Value
Units
VCER
Collector-Emitter Voltage at RBE=1KΩ
-60
V
VCES
Collector-Emitter Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-1
A
ICP
Peak Collector Current
-1.5
A
IB
Base Current
-100
mA
PC
Collector Power Dissipation
1
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-65 ~ 150
°C
Electrical Characteristics
Symbol
Ta = 25°C unless otherwise noted
Parameter
Test Condition
Typ.
Max.
ICBO
Collector Cut-off Current
VCB= -30V, IE=0
-0.1
µA
IEBO
Emitter Cut-off Current
VEB= -5V, IC=0
-0.1
µA
hFE1
hFE2
hFE3
DC Current Gain
VCE= -2V, IC= -5mA
VCE= -2V, IC= -150mA
VCE= -2V, IC= -500mA
VCE (sat)
Collector-Emitter Saturation Voltage
IC= -500mA, IB= -50mA
VBE (on)
Base-Emitter On Voltage
VCE= -2V, IC= -500mA
fT
Current Gain Bandwidth Product
VCE= -5V, IC= -10mA,
f=50MHz
BC638 Rev. C2
1
-60
Units
Collector-Emitter Breakdown Voltage
©2005 Fairchild Semiconductor Corporation
IC= -10mA, IB=0
Min.
BVCEO
V
25
40
25
160
-0.5
-1
100
V
V
MHz
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Device Marking
Device
BC638
BC638BU
TO-92
BC638
BC638TA
TO-92
BC638
BC638TF
TO-92
--
--
2,000
BC638
BC638TFR
TO-92
--
--
2,000
BC638 Rev. C2
Package
Reel Size
2
Tape Width
Quantity
--
--
10,000
--
--
2,000
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BC638 PNP Epitaxial Silicon Transistor
Package Marking and Ordering Information
Figure 1. Static Characteristic
-500
Figure 2. DC Current Gain
1000
IB = - 1.8 mA
VCE = - 2V
IB = - 1.4 mA
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
IB = - 1.6 mA
-400
IB = - 1.2 mA
IB = - 1.0 mA
-300
IB = - 0.8 mA
IB = - 0.6 mA
-200
IB = - 0.4 mA
-100
-0
IB = - 0.2 mA
-0
-10
-20
-30
-40
100
10
-50
-1
-100
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
-10
-1000
IC[mA], COLLECTOR CURRENT
IC = 10 IB
VBE(sat)
-1
-0.1
VCE(sat)
-0.01
-1000
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
-10
-1
-10
-100
VCE = - 2V
-100
-10
-1
-1000
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
VBE[V], BASE-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
100
Cob[pF], CAPACITANCE
f=1MHz
10
1
-1
-10
-100
VCB[V], COLLECTOR-BASE VOLTAGE
BC638 Rev. C2
3
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BC638 PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
BC638 PNP Epitaxial Silicon Transistor
Mechanical Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
(0.25)
+0.10
0.38 –0.05
0.38 –0.05
±0.20
3.86MAX
3.60
1.02 ±0.10
+0.10
1.27TYP
[1.27 ±0.20]
(R2.29)
Dimensions in Millimeters
BC638 Rev. C2
4
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Definition of Terms
Datasheet Identification
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Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
5
BC638 Rev. C2
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BC638 PNP Epitaxial Silicon Transistor
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