ON NGTG50N60FLWG Insulated gate bipolar transistor (igbt) Datasheet

NGTG50N60FLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss.
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Features
•
•
•
•
•
Low Saturation Voltage using Trench with Field Stop Technology
Low Switching Loss Reduces System Power Dissipation
Optimized for High Speed Switching
5 ms Short−Circuit Capability
These are Pb−Free Devices
50 A, 600 V
VCEsat = 1.65 V
C
Typical Applications
• Power Factor Correction
• Solar Inverters
• Uninterruptable Power Supply (UPS)
G
ABSOLUTE MAXIMUM RATINGS
Rating
E
Symbol
Value
Unit
Collector−emitter voltage
VCES
600
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
A
100
50
Pulsed collector current, Tpulse
limited by TJmax
ICM
200
A
Short−circuit withstand time
VGE = 15 V, VCE = 400 V,
TJ ≤ +150°C
tSC
5
ms
Gate−emitter voltage
VGE
$20
V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
Operating junction temperature
range
TJ
−55 to +150
°C
Storage temperature range
Tstg
−55 to +150
°C
Lead temperature for soldering, 1/8”
from case for 5 seconds
TSLD
260
°C
G
C
TO−247
CASE 340L
STYLE 4
E
MARKING DIAGRAM
W
223
89
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
G50N60FL
AYWWG
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGTG50N60FLWG
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. 0
1
Package
Shipping
TO−247
(Pb−Free)
30 Units / Rail
Publication Order Number:
NGTG50N60FLW/D
NGTG50N60FLWG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.56
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
600
−
−
V
VGE = 15 V, IC = 50 A
VGE = 15 V, IC = 25 A, TJ = 150°C
VCEsat
1.40
−
1.65
1.85
1.90
−
V
VGE = VCE, IC = 350 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 150°C
ICES
−
−
−
−
0.5
2
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V , VCE = 0 V
IGES
−
−
200
nA
Cies
−
7302
−
pF
Coes
−
220
−
Cres
−
190
−
Gate charge total
Qg
−
310
−
Gate to emitter charge
Qge
−
60
−
Qgc
−
150
−
td(on)
−
116
−
tr
−
43
−
td(off)
−
292
−
tf
−
78
−
Eon
−
1.1
−
Turn−off switching loss
Eoff
−
0.6
−
Total switching loss
Ets
−
1.7
−
Turn−on delay time
td(on)
−
110
−
tr
−
45
−
td(off)
−
300
−
tf
−
105
−
Eon
−
1.4
−
Turn−off switching loss
Eoff
−
1.1
−
Total switching loss
Ets
−
2.5
−
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
VCE = 480 V, IC = 50 A, VGE = 15 V
Gate to collector charge
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 25°C
VCC = 400 V, IC = 50 A
Rg = 10 W
VGE = 0 V/ 15 V*
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 150°C
VCC = 400 V, IC = 50 A
Rg = 10 W
VGE = 0 V/ 15 V*
*Includes diode reverse recovery loss using NGTB50N60FLWG.
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2
ns
mJ
ns
mJ
NGTG50N60FLWG
TYPICAL CHARACTERISTICS
300
TJ = 25°C
VGE = 17 V to 13 V
200
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
250
11 V
150
10 V
100
9V
50
7V
0
0
8V
1
2
3
4
5
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
250
11 V
150
10 V
100
9V
50
8V
7V
0
Figure 1. Output Characteristics
VGE = 17 V to 13 V
11 V
150
10 V
100
7V
50
0
9V
8V
0
1
2
3
4
5
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
180
160
100
80
60
40
20
0
16
100000
IC = 100 A
10000
2.00
IC = 50 A
1.50
IC = 25 A
1.00
IC = 5 A
CAPACITANCE (pF)
VCE, COLLECTOR−EMITTER
VOLTAGE (V)
4
8
12
VGE, GATE−EMITTER VOLTAGE (V)
Figure 4. Typical Transfer Characteristics
3.00
Cies
1000
Coes
100
Cres
0.50
0.00
−75
TJ = 150°C
120
0
8
TJ = 25°C
140
Figure 3. Output Characteristics
2.50
8
200
TJ = −55°C
200
1
2
3
4
5
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 2. Output Characteristics
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
250
VGE = 17 V to 13 V
200
0
8
TJ = 150°C
−25
25
75
125
TJ, JUNCTION TEMPERATURE (°C)
175
10
0
Figure 5. VCE(sat) vs. TJ
10 20
30 40
50 60 70
80 90 100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 6. Typical Capacitance
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3
NGTG50N60FLWG
TYPICAL CHARACTERISTICS
VGE, GATE−EMITTER VOLTAGE (V)
20
15
VCE = 480 V
10
5
0
0
50
100
150
200 250
QG, GATE CHARGE (nC)
300
350
Figure 7. Typical Gate Charge
1.6
1000
td(off)
Eon
1.2
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
1.4
1
Eoff
0.8
0.6
VCE = 400 V
VGE = 15 V
IC = 50 A
Rg = 10 W
0.4
0.2
0
0
20
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (°C)
tf
tr
10
1
160
td(on)
100
VCE = 400 V
VGE = 15 V
IC = 50 A
Rg = 10 W
0
Figure 8. Switching Loss vs. Temperature
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
SWITCHING LOSS (mJ)
4
3.5
3
2.5
td(off)
Eon
1.5
1
tf
100
td(on)
tr
10
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
0.5
0
8
20
160
1000
Eoff
2
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Time vs. Temperature
SWITCHING TIME (ns)
4.5
20
32
44
56
68
80
IC, COLLECTOR CURRENT (A)
92
1
104
8
Figure 10. Switching Loss vs. IC
20
32
44
56
68
80
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Time vs. IC
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4
92
104
NGTG50N60FLWG
TYPICAL CHARACTERISTICS
SWITCHING LOSS (mJ)
6
5
10000
VCE = 400 V
VGE = 15 V
IC = 50 A
TJ = 150°C
td(off)
Eon
SWITCHING TIME (ns)
7
4
Eoff
3
2
1000
td(on)
100
tf
tr
VCE = 400 V
VGE = 15 V
IC = 50 A
TJ = 150°C
10
1
0
5
15
25
35
45
55
65
75
1
5
85
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
Eon
225
275
325
375 425 475
525
VCE, COLLECTOR−EMITTER VOLTAGE (V)
85
225
275
325
375
425 475
525
VCE, COLLECTOR−EMITTER VOLTAGE (V)
575
tf
tr
10
1
175
575
VGE = 15 V
IC = 50 A
Rg = 10 W
TJ = 150°C
Figure 15. Switching Time vs. VCE
1000
1000
50 ms
100
dc operation
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
75
td(on)
100
Figure 14. Switching Loss vs. VCE
0.01
1
65
td(off)
0.6
0.1
55
1000
VGE = 15 V
IC = 50 A
Rg = 10 W
TJ = 150°C
1.2
1
45
Figure 13. Switching Time vs. RG
Eoff
10
35
Figure 12. Switching Loss vs. RG
1.8
0
175
25
RG, GATE RESISTOR (W)
3
2.4
15
RG, GATE RESISTOR (W)
100 ms
1 ms
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
10
100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
100
10
1
1000
VGE = 15 V, TC = 125°C
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Safe Operating Area
Figure 17. Reverse Bias Safe Operating Area
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NGTG50N60FLWG
TYPICAL CHARACTERISTICS
1
50% Duty Cycle
RqJC = 0.56
20%
R(t) (°C/W)
0.1
10%
Junction R1
5%
1%
C1
C2
Cn
Ri (°C/W)
Case
0.00001
ti (sec)
0.02087
0.05041
0.07919
0.11425
0.19393
1.0E−4
5.48E−5
0.002
0.03
0.1
0.09951
2.0
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.001
0.000001
Rn
Ci = ti/Ri
2%
0.01
R2
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 18. IGBT Transient Thermal Impedance
Figure 19. Test Circuit for Switching Characteristics
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6
10
100
1000
NGTG50N60FLWG
Figure 20. Definition of Turn On Waveform
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7
NGTG50N60FLWG
Figure 21. Definition of Turn Off Waveform
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8
NGTG50N60FLWG
PACKAGE DIMENSIONS
TO−247
CASE 340L−02
ISSUE F
−T−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
C
−B−
E
U
N
L
4
A
−Q−
1
2
0.63 (0.025)
3
M
T B
M
P
−Y−
K
F 2 PL
W
J
D 3 PL
0.25 (0.010)
M
Y Q
MILLIMETERS
MIN
MAX
20.32
21.08
15.75
16.26
4.70
5.30
1.00
1.40
1.90
2.60
1.65
2.13
5.45 BSC
1.50
2.49
0.40
0.80
19.81
20.83
5.40
6.20
4.32
5.49
--4.50
3.55
3.65
6.15 BSC
2.87
3.12
STYLE 4:
PIN 1.
2.
3.
4.
H
G
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
U
W
INCHES
MIN
MAX
0.800
8.30
0.620
0.640
0.185
0.209
0.040
0.055
0.075
0.102
0.065
0.084
0.215 BSC
0.059
0.098
0.016
0.031
0.780
0.820
0.212
0.244
0.170
0.216
--0.177
0.140
0.144
0.242 BSC
0.113
0.123
GATE
COLLECTOR
EMITTER
COLLECTOR
S
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NGTG50N60FLW/D