, Unc. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BLW91 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand infinite VSWR at rated output power. High reliability is ensured by a gold sandwich metallization. The transistor is housed in a V«," capstan envelope with a ceramic cap. All leads are isolated from the stud. QUICK REFERENCE DATA R.F. performance up to Th = 26 °C in an unneutralized common-emitter class-B circuit de of operation c.w. GP V f MHz PL w dB % 28 470 10 >9 >60 VCE MECHANICAL DATA Dimensions in mm Fig.1 SOT122A. 1 1,52 5 — 0,14 t x metal 8-32UNC 35 - 8,5 - max~*~ ^ 3,25 2,80"* 12,0 ^ 11,0 Torque on nut; min. 0,75 Nm Diameter of clearance hole in heatsink: max. 4,2 mm. (7,5 kg cm) Mounting hole to have no burrs at either end. max. 0,85 Nm De-burring must leave surface flat; do not chamfer or (8,5 kg cm) countersink either end of hole. When locking is required an adhesive is preferred instead of a lock washer. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discoveYed in its use. Nl Semi-Conductors encourages customers to verify rhat datasheets are current before pfacing orders. RATINGS Limiting values in accordance with the Absolute Maximum System Collector-emitter voltage (peak value); VBE - ° open base Emitter-base voltage (open collector) Collector current d.c. or average (peakvalue);f>1 MHz VcEO max. max. V 6BO max. 'c; IC(AV) 'CM Total power dissipation up to Tmb - 35 °C ptot R.F. power dissipation (f > 1 MHz); Tmb = 25 °C Storage temperature Tstg Operating junction temperature T: max. 1,5 A 3,5 A max. max. 30 W max. 32,5 W -65 to + 150 °C max. 200 °C VCESM Prf 60 V 30 V 4 V ?8 3340 7ZB3338 P.tot. (W) j s on ^ s V ^ ^\ ^ fc i ss \^ s, ^\ 20 ss S ^ % s \ V 11 V m 0 Fig. 2 D.C. SOAR. T 50 Fig. 3 Power derating curves vs. temperature. I Continuous d.c. operation II Continuous r.f. operation III Short-time operation during mismatch THERMAL RESISTANCE (dtssipation = 10 W; Tmb = 76 oc, i.e. Th = 70 °C) From junction to mounting base (d,c. and r.f. dissipation) Rtn i.^ From mounting base to heatsink 100 Rth mb-h = 6,2 K/W 0,6 K/W CHARACTERISTICS Tj = 25 °C Collector-emitter breakdown voltage VBE = 0; IC - 10 mA Collector-emitter breakdown voltage open base; Ic = 50 mA Emitter-base breakdown voltage open collector; Ig = 4 mA Collector cut-off current V(BR)CES 60 V V (BR)CEO 30 V V (BR)EBO 4 V VBE = 0; VCE = so v Second breakdown energy; L = 25 mH; f = 50 Hz open base 4 mA 2 mJ 2 mJ ESBO ESBR D.C. current gain * lc = 0,6 A; VCE " 5 V Collector-emitter saturation voltage * lc = 2,0 A; IB = 0,4 A Transition frequency at f = 500 MHz -IE = 2,OA;V CB = Collector capacitance at f = 1 MHz Feedback capacitance at f - 1 MHz lc = 20 mA; VCE = 28 V Collector-stud capacitance "FE typ. 40 10 to 100 vCEsat typ. 1,0 V ff typ. typ. 1,2 GHz 1,0 GHz typ. 17 pF typ. typ. 8,5 pF 1,2 pF Cre