Jiangsu BAS16WX High-speed switching diode Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
BAS16WX
HIGH-SPEED SWITCHING DIODE
SOD-323
FEATURES
z
z
z
Fast Switching Speed
For General Purpose Switching Applications
High Conductance
MARKING: T4
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol
Limit
Unit
Non-Repetitive Peak Reverse Voltage
VRM
85
V
Peak Repetitive Peak Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
75
V
DC Blocking Voltage
VR
RMS Reverse Voltage
VR(RMS)
53
V
IO
100
mA
Non-Repetitive Peak Forward Surge Current @t=8.3ms
IFSM
2.0
A
Power Dissipation
Pd
200
mW
RθJA
625
℃/W
Junction Temperature
Tj
150
℃
Storage Temperature
TSTG
-55~+150
Test conditions
Min
Average Rectified Output Current
Thermal Resistance Junction to Ambient
℃
Electrical Ratings @Ta=25℃
Parameter
Reverse voltage
Forward voltage
Symbol
V(BR)
IR
Total capacitance
Ctot
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Max
75
trr
Unit
V
IF=1mA
0.715
IF=10mA
0.855
IF=50mA
1
IF=150mA
1.25
V
VF
Reverse current
Reverse recovery time
IR=10μA
Typ
VR=75V
1
μA
VR=0V,f=1MHz
2
pF
IF= IR=10mA, Irr=0.1×IR,RL=100Ω
6
ns
1
C,Mar,2015
Typical Characteristics
(nA)
REVERSE CURRENT IR
T =2
a
5℃
10
1
0.1
0.0
Reverse
10000
T=
a 10
0℃
(mA)
IF
FORWARD CURRENT
Characteristics
Forward
100
Characteristics
Ta=100℃
1000
100
Ta=25℃
10
1
0.4
0.8
1.2
FORWARD VOLTAGE
VF
1.6
0
20
(V)
40
60
REVERSE VOLTAGE
80
VR
100
(V)
Power Derating Curve
Capacitance Characteristics
1.6
250
(mW)
f=1MHz
200
PD
1.4
1.2
POWER DISSIPATION
CAPACITANCE BETWEEN TERMINALS
CT (pF)
Ta=25℃
1.0
0.8
0.6
150
100
50
0
0
4
8
12
REVERSE VOLTAGE
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16
VR
20
0
(V)
25
50
75
100
AMBIENT TEMPERATURE
2
125
Ta
150
(℃)
C,Mar,2015
SOD-323 Package Outline Dimensions
SOD-323 Suggested Pad Layout
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3
C,Mar,2015
SOD-323 Tape and Reel
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4
C,Mar,2015
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