MSFC110 Thyristor/Diode Modules VRRM / VDRM IFAV / ITAV 800 to 1600V 110Amp Applications Circuit Features MSFC 1 2 Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control 3 5 4 International standard package High Surge Capability Glass passivated chip Simple Mounting Heat transfer through aluminum oxide DBCceramic isolated metal baseplate UL E243882 approved Module Type TYPE VRRM/VDRM VRSM MSFC110-08 MSFC110-12 MSFC110-16 800V 1200V 1600V 900V 1300V 1700V ◆Diode Maximum Ratings Symbol Values Units ID Output Current(D.C.) Tc=85℃ 110 A IFSM Surge forward current t=10mS Tvj =45℃ 2250 A 25000 As 2 it Visol Tvj Tstg Mt Item Circuit Fusing Consideration Isolation Breakdown Voltage(R.M.S) 3000 V -40 to +125 ℃ Storage Temperature -40 to +125 ℃ To terminals(M5) 3±15% Nm To heatsink(M6) 5±15% Nm 100 g Mounting Torque Module（Approximately） Thermal Characteristics Symbol Item Rth(j-c) Thermal Impedance, max. Rth(c-s) a.c.50HZ;r.m.s.;1min 2 Operating Junction Temperature Ms Weight Conditions Thermal Impedance, max. Values Units Junction to Case Conditions 0.14 ℃/W Case to Heatsink 0.10 ℃/W Electrical Characteristics Symbol Item VFM Forward Voltage Drop, max. IRRM Repetitive Peak Reverse Current, max. Document Number: MSFC110 Sep.06,2013 Conditions T=25℃ IF =300A Tvj =25℃ VRD=VRRM Tvj =125℃ VRD=VRRM Values Min. Typ. Max. 1.65 ≤0.5 ≤6 Units V mA mA www.smsemi.com 1 MSFC110 ◆Thyristor Maximum Ratings Symbol Values Units ITAV Average On-State Current Sine 180 ;Tc=85℃ 110 A ITSM Surge On-State Current TVJ =45℃ t=10ms, sine TVJ =125℃ t=10ms, sine 2250 1900 A Circuit Fusing Consideration TVJ =45℃ t=10ms, sine TVJ =125℃ t=10ms, sine 25000 18000 A2s Isolation Breakdown Voltage(R.M.S) a.c.50HZ;r.m.s.;1min 3000 V Operating Junction Temperature -40 to +130 ℃ Storage Temperature -40 to +125 ℃ To terminals(M5) 3±15% Nm To heatsink(M6) 5±15% Nm 2 it Visol Tvj Tstg Mt Item Mounting Torque Ms Conditions o di/dt Critical Rate of Rise of On-State Current TVJ= TVJM , 2/3VDRM ,IG =500mA Tr<0.5us,tp>6us 150 A/us dv/dt Critical Rate of Rise of Off-State Voltage, min. TJ=TVJM ,2/3VDRM linear voltage rise 1000 V/us a Maximum allowable acceleration 50 m/s Values Units Junction to Case 0.28 ℃/W Case to Heatsink 0.20 ℃/W Thermal Characteristics Symbol Item Thermal Impedance, max. Rth(j-c) Rth(c-s) Thermal Impedance, max. Conditions 2 Electrical Characteristics Symbol Item VTM Peak On-State Voltage, max. Repetitive Peak Reverse Current, max. / Repetitive Peak Off-State Current, max. Conditions Values Min. Typ. Max. Units 1.72 V TVJ=TVJM ,VR=VRRM ,VD= VDRM 20 mA On state threshold voltage For power-loss calculations only (TVJ =125℃) 0.9 V Value of on-state slope resistance. max TVJ =TVJM 2 mΩ VGT Gate Trigger Voltage, max. TVJ =25℃ , VD =6V 3 V IGT Gate Trigger Current, max. TVJ =25℃ , VD =6V 150 mA VGD Non-triggering gate voltage, max. TVJ=125℃,VD =2/3VDRM 0.25 V IGD IRRM/IDRM VTO rT T=25℃ IT =300A Non-triggering gate current, max. TVJ =125℃, VD =2/3VDRM 6 mA IL Latching current, max. TVJ =25℃ , RG = 33 Ω 300 600 mA IH Holding current, max. TVJ =25℃ , VD =6V 150 250 mA tgd Gate controlled delay time TVJ=25℃, IG=1A, diG/dt=1A/us tq Circuit commutated turn-off time TVJ =TVJM Document Number: MSFC110 Sep.06,2013 1 us 100 us www.smsemi.com 2 MSFC110 Performance Curves 200 200 W rec.120 A sin.180 DC 150 DC 160 rec.60 120 rec.30 sin.180 100 rec.120 80 rec.60 50 rec.30 40 PTAV ITAVM 0 0 ITAV 50 100 A 150 0 0 Fig1. Power dissipation 50 100 2500 Zth(j-S) ℃/ W Zth(j-C) 0.25 0.001 t 0.01 0.1 1 10 S 100 50HZ A 1250 0 Fig3. Transient thermal impedance 10 100 ms 1000 Fig4. Max Non-Repetitive Forward Surge Current 300 A ℃ 130 Fig2.Forward Current Derating Curve 0.50 0 Tc 150 ℃ Typ. 200 max. 100 25℃ - - -125℃ IT 0 0 VTM 0.5 1.0 1.5 V 2.0 Fig5. Forward Characteristics Document Number: MSFC110 Sep.06,2013 www.smsemi.com 3 MSFC110 100 1/2·MSFC110 V 20V;20Ω 15 10 10 50 W (8 VGT 0W (0 m .5 m s) 0W (0 .1 m s) s) ∧ 1 VG Tvj IGT VGD125℃ 0.1 1.1 0.001 PG(tp) -40℃ 25℃ 125℃ IGD125℃ IG 0.01 0.1 1 10 A 100 Fig6. Gate trigger Characteristics Package Outline Information CASE: F1 × Dimensions in mm Document Number: MSFC110 Sep.06,2013 www.smsemi.com 4