Data Sheet 4V Drive Nch + Nch MOSFET MP6K11 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) MPT6 (Duel) Features 1) Low on-resistance. 2) High power package(MPT6). 3) Low voltage drive(4V drive). (6) (5) (4) (1) (2) (3) Application Switching Inner circuit Packaging specifications Type Package Code Basic ordering unit (pieces) Taping TCR 1000 MP6K11 (6) Symbol Limits Unit Drain-source voltage VDSS 30 V VGSS 20 V Source current (Body Diode) Continuous ID Pulsed Continuous IDP Is *1 Pulsed Isp *1 PD *2 Power dissipation Channel temperature Range of storage temperature Tch Tstg ∗2 ∗2 Gate-source voltage Drain current (4) ∗1 Absolute maximum ratings (Ta = 25C) Parameter (5) 3.5 A 12 1.6 A A 12 A (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE 2.0 W / TOTAL 1.4 W / ELEMENT 150 C 55 to 150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.04 - Rev.A Data Sheet MP6K11 Electrical characteristics (Ta = 25C) <It is the same ratings for Tr1 and Tr2.> Symbol Min. Typ. Max. Unit IGSS 10 A Drainsource breakdown voltage V (BR)DSS 30 V ID=1mA, VGS=0V Zero gate voltage drain current IDSS 1 A VDS=30V, VGS=0V Gate threshold voltage VGS (th) 1.0 2.5 V VDS=10V, ID=1mA Static drainsource onstate resistance RDS (on)* 70 98 ID=3.5A, VGS=10V 90 126 m ID=3.5A, VGS=4.5V 110 140 l Yfs l* 1.5 S ID=3.5A, VDS=10V Input capacitance Ciss 85 pF VDS=10V Output capacitance Coss 40 pF VGS=0V Reverse transfer capacitance Crss 20 pF f=1MHz Turnon delay time td(on) * 4 ns ID=1.75A, VDD 15V tr * 8 ns VGS=10V td(off) * 18 ns RL=6.0 Parameter Gatesource leakage Forward transfer admittance Rise time Turnoff delay time Conditions VGS=20V, VDS=0V ID=3.5A, VGS=4.0V tf * 3 ns RG=10 Total gate charge Qg * 1.9 nC ID=3.5A, VDD 15V Gatesource charge Gatedrain charge Qgs * Qgd * 0.8 0.4 nC nC VGS=5V Fall time *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) <It is the same ratings for Tr1 and Tr2.> Parameter Forward Voltage Symbol VSD * Min. Typ. Max. 1.2 Unit V Conditions Is=3.5A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.04 - Rev.A Data Sheet MP6K11 Electrical characteristic curves (Ta=25C) Fig.2 Typical Output Characteristics(Ⅱ) Fig.1 Typical Output Characteristics(Ⅰ) 3.5 3.5 Ta=25°C Pulsed 3 DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A] 2.5 2 VGS= 2.8V 1.5 1 VGS= 2.5V 0.5 VGS= 2.8V 3 VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 10V VGS= 4.5V VGS= 4.0V 2.5 2 VGS= 2.5V 1.5 1 0.5 Ta=25°C Pulsed 0 0 0 0.2 0.4 0.6 0.8 1 0 DRAIN-SOURCE VOLTAGE : VDS[V] 6 8 10 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Fig.3 Typical Transfer Characteristics 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VDS= 10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1 DRAIN CURRENT : ID[A] 4 DRAIN-SOURCE VOLTAGE : VDS[V] 10 0.1 0.01 Ta=25°C Pulsed VGS= 4.0V VGS= 4.5V VGS= 10V 100 . 10 0.001 0 1 2 0.1 3 1 10 GATE-SOURCE VOLTAGE : VGS[V] DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 1000 1000 VGS= 10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 2 100 10 VGS= 4.5V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 10 0.1 1 DRAIN-CURRENT : ID[A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10 0.1 1 10 DRAIN-CURRENT : ID[A] 3/6 2011.04 - Rev.A Data Sheet MP6K11 Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Forward Transfer Admittance vs. Drain Current 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 10 VGS= 4.0V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 10 0.1 1 VDS= 10V Pulsed 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 10 0.1 Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 200 Ta=25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VGS=0V Pulsed SOURCE CURRENT : Is [A] 10 Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 10 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 ID= 1.75A 150 ID= 3.5A 100 50 0 0 0.5 1 1.5 0 SOURCE-DRAIN VOLTAGE : VSD [V] Fig.11 Switching Characteristics 2 4 6 8 GATE-SOURCE VOLTAGE : VGS[V] 10 Fig.12 Dynamic Input Characteristics 10 1000 tf GATE-SOURCE VOLTAGE : VGS [V] Ta=25°C VDD= 15V VGS=10V RG=10Ω Pulsed td(off) SWITCHING TIME : t [ns] 1 DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A] 100 td(on) 10 8 6 4 Ta=25°C VDD= 15V ID= 3.5A Pulsed 2 tr 1 0 0.01 0.1 1 10 0 DRAIN-CURRENT : ID[A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 2 3 4 5 TOTAL GATE CHARGE : Qg [nC] 4/6 2011.04 - Rev.A Data Sheet MP6K11 Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Aera 1000 100 Operation in this area is limited by RDS(ON) (VGS=10V) DRAIN CURRENT : ID (A) CAPACITANCE : C [pF] Ciss 100 Crss 10 Coss 10 PW =100us 1 PW =1ms PW = 10ms 0.1 Ta=25°C Single Pulse : 1Unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Ta=25°C f=1MHz VGS=0V 1 DC operation 0.01 0.01 0.1 1 10 100 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V] Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) 10 Ta=25°C Single Pulse : 1Unit 1 0.1 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=89.3°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.04 - Rev.A Data Sheet MP6K11 Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) ton Fig.1-1 Switching Time Measurement Circuit 90% td(off) tr tf toff Fig.1-2 Switching Waveforms VG VGS ID VDS Qg RL IG(Const.) VGS D.U.T. Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.04 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A