MJD122 (NPN) MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Surface Mount Replacements for 2N6040−2N6045 Series, • • • • • SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS TIP120−TIP122 Series, and TIP125−TIP127 Series Monolithic Construction With Built−in Base−Emitter Shunt Resistors High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Pb−Free Packages are Available 4 1 2 3 MARKING DIAGRAM MAXIMUM RATINGS Rating Symbol Value Unit VCEO 100 Vdc Collector−Base Voltage VCB 100 Vdc Emitter−Base Voltage VEB 5 Vdc IC 8 16 Adc Base Current IB 120 mAdc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 20 0.16 W W/°C Total Power Dissipation (Note 1) @ TA = 25°C Derate above 25°C PD 1.75 0.014 W W/°C Operating and Storage Junction Temperature Range TJ, Tstg −65 to +150 °C Collector−Emitter Voltage Collector Current − Continuous − Peak YWW J12xG Y WW x G = Year = Work Week = 2 or 7 = Pb−Free Package ORDERING INFORMATION Package Shipping † DPAK 75 Units/Rail MJD122G DPAK (Pb−Free) 75 Units/Rail MJD122T4 DPAK 2500/Tape & Reel DPAK (Pb−Free) 2500/Tape & Reel Device MJD122 MJD122T4G THERMAL CHARACTERISTICS Characteristic DPAK CASE 369C STYLE 1 Symbol Max Unit MJD127 DPAK 75 Units/Rail Thermal Resistance Junction−to−Case RqJC 6.25 °C/W MJD127G DPAK (Pb−Free) 75 Units/Rail Thermal Resistance Junction−to−Ambient (Note1) RqJA 71.4 °C/W MJD127T4 DPAK 2500/Tape & Reel DPAK (Pb−Free) 2500/Tape & Reel Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. MJD127T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2005 December, 2005 − Rev. 7 1 Publication Order Number: MJD122/D MJD122 (NPN) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 100 − Vdc Collector Cutoff Current (VCE = 50 Vdc, IB = 0) ICEO − 10 mAdc Collector Cutoff Current (VCB = 100 Vdc, IE = 0) ICBO − 10 mAdc Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO − 2 mAdc 1000 100 12,000 − − − 2 4 OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 30 mAdc, IB = 0) ON CHARACTERISTICS DC Current Gain (IC = 4 Adc, VCE = 4 Vdc) (IC = 8 Adc, VCE = 4 Vdc) hFE − Collector−Emitter Saturation Voltage (IC = 4 Adc, IB = 16 mAdc) (IC = 8 Adc, IB = 80 mAdc) VCE(sat) Vdc Base−Emitter Saturation Voltage (Note 2) (IC = 8 Adc, IB = 80 mAdc) VBE(sat) − 4.5 Vdc Base−Emitter On Voltage (IC = 4 Adc, VCE = 4 Vdc) VBE(on) − 2.8 Vdc |hfe| 4 − MHz − − 300 200 300 − DYNAMIC CHARACTERISTICS Current−Gain−Bandwidth Product (IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob pF MJD127 MJD122 Small−Signal Current Gain (IC = 3 Adc, VCE = 4 Vdc, f = 1 kHz) hfe 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. PD, POWER DISSIPATION (WATTS) TA TC 2.5 25 2 20 TC 1.5 15 TA SURFACE MOUNT 1 10 0.5 5 0 0 25 50 75 100 T, TEMPERATURE (°C) Figure 1. Power Derating http://onsemi.com 2 125 150 − MJD122 (NPN) TYPICAL ELECTRICAL CHARACTERISTICS PNP MJD127 NPN MJD122 20,000 20,000 VCE = 4 V VCE = 4 V 10,000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 10,000 7000 5000 TJ = 150°C 3000 2000 25°C 1000 700 500 300 200 0.1 −55 °C 0.2 5000 TJ = 150°C 3000 2000 25°C 1000 −55 °C 500 0.3 0.5 0.7 1 2 3 5 7 300 200 0.1 10 0.2 0.5 0.7 0.3 IC, COLLECTOR CURRENT (AMP) 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMP) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 2. DC Current Gain 3 TJ = 25°C 2.6 IC = 2 A 4A 6A 2.2 1.8 1.4 1 0.3 0.5 0.7 1 2 3 5 7 10 20 30 3 TJ = 25°C 2.6 IC = 2 A 4A 6A 2.2 1.8 1.4 1 0.3 0.5 0.7 1 2 3 5 7 10 20 30 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA) Figure 3. Collector Saturation Region 3 3 TJ = 25°C TJ = 25°C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.5 2 1.5 1 VBE @ VCE = 4 V VBE(sat) @ IC/IB = 250 2 1.5 VBE @ VCE = 4 V 1 VCE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.5 0.1 0.2 0.3 0.5 0.7 VBE(sat) @ IC/IB = 250 1 2 3 5 7 0.5 0.1 10 IC, COLLECTOR CURRENT (AMP) 0.2 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMP) Figure 4. “On” Voltages http://onsemi.com 3 5 7 10 MJD122 (NPN) TYPICAL ELECTRICAL CHARACTERISTICS NPN MJD122 +5 θV, TEMPERATURE COEFFICIENTS (mV/°C) θV, TEMPERATURE COEFFICIENTS (mV/°C) PNP MJD127 *IC/IB ≤ hFE/3 +4 +3 +2 +1 0 25°C to 150°C qVC for VCE(sat) −1 −55 °C to 25°C 25°C to 150°C −2 −3 qVB for VBE −55 °C to 25°C −4 −5 0.1 0.2 0.3 0.5 1 2 3 IC, COLLECTOR CURRENT (AMP) 5 7 +5 +4 *IC/IB ≤ hFE/3 +3 25°C to 150°C +2 −55 °C to 25°C +1 0 *qVC for VCE(sat) −1 −2 −3 −4 −5 0.1 10 25°C to 150°C qVB for VBE −55 °C to 25°C 0.2 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMP) 5 7 10 Figure 5. Temperature Coefficients 105 105 REVERSE FORWARD IC, COLLECTOR CURRENT (A) μ IC, COLLECTOR CURRENT (A) μ REVERSE 104 VCE = 30 V 103 102 TJ = 150°C 101 100°C 100 25°C 10−1 +0.6 +0.4 +0.2 0 −0.2 −0.4 −0.6 −0.8 −1 VBE, BASE−EMITTER VOLTAGE (VOLTS) FORWARD 104 VCE = 30 V 103 102 TJ = 150°C 101 100 100°C 25°C 10−1 −0.6 −0.4 −0.2 0 +0.2 +0.4 +0.6 +0.8 +1 VBE, BASE−EMITTER VOLTAGE (VOLTS) −1.2 −1.4 +1.2 +1.4 Figure 6. Collector Cut−Off Region 300 5000 3000 2000 200 TJ = 25°C C, CAPACITANCE (pF) hfe , SMALL−SIGNAL CURRENT GAIN 10,000 1000 500 300 200 TC = 25°C VCE = 4 Vdc IC = 3 Adc 100 50 30 20 10 2 5 100 70 Cib 50 PNP NPN 1 Cob 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 30 0.1 PNP NPN 0.2 0.5 1 2 5 10 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Capacitance Figure 7. Small−Signal Current Gain http://onsemi.com 4 20 50 100 MJD122 (NPN) 5 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA VCC −30 V RC SCOPE RB 51 ≈ 8 k ≈ 120 D1 +4V 25 ms tf 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.1 FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 tr, tf ≤ 10 ns DUTY CYCLE = 1% PNP NPN ts 1 t, TIME (s) μ TUT V2 APPROX +8 V 0 V1 APPROX −12 V 3 2 0.2 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES. r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 9. Switching Times Test Circuit 1 0.7 0.5 td @ VBE(off) = 0 V 0.3 0.5 0.7 1 3 2 IC, COLLECTOR CURRENT (AMP) 5 7 10 Figure 10. Switching Times D = 0.5 0.2 0.3 0.2 0.1 0.07 0.05 tr VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C 0.1 RqJC(t) = r(t) RqJC RqJC = 6.25°C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) qJC(t) 0.05 0.01 0.03 SINGLE PULSE 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 t, TIME OR PULSE WIDTH (ms) 20 30 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 300 500 1000 IC, COLLECTOR CURRENT (AMP) Figure 11. Thermal Response 20 15 10 500m σ 5 3 2 0.5 0.3 0.2 5ms BONDING WIRE LIMIT THERMAL LIMIT TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 0.1 0.05 0.03 0.02 100m σ 1ms TJ = 150°C 1 1 2 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 12 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150_C. T J(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 3 5 7 10 20 dc 30 50 70 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 12. Maximum Forward Bias Safe Operating rea http://onsemi.com 5 MJD122 (NPN) COLLECTOR PNP COLLECTOR NPN BASE BASE ≈8k ≈ 120 ≈8k EMITTER ≈ 120 EMITTER Figure 13. Darlington Schematic http://onsemi.com 6 MJD122 (NPN) PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE −T− E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D 2 PL G 0.13 (0.005) M T INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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