isc Product Specification INCHANGE Semiconductor isc Thyristors BT151-800 APPLICATIONS ·For use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 800 V VRRM Repetitive peak reverse voltage 800 V IT(AV) Average on-stage current 8 A RMS on-state current 12 A ITSM Surge non-repetitive on-state current 100 A PGM Peak gate power dissipation 5 W IT(RMS) PG(AV) Average gate power dissipation 0.5 W Tj Operating junction temperature 125 ℃ -45~150 ℃ Tstg Storage temperature ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VRM=VRRM, VRM=VRRM, Tj=125℃ VDM=VDRM, VDM=VDRM , Tj=125℃ 0.02 0.5 0.02 0.5 On-state voltage ITM= 23A 1.75 V IGT Gate-trigger current VD= 12V; IT= 0.1A 8 mA VGT Gate-trigger voltage VD= 12V; IT= 0.1A 1.5 V Holding current IT= 0.1A; Gate Open 20 mA Thermal resistance Junction to case 1.6 ℃/W IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VTM IH Rth(j-c) isc website：www.iscsemi.cn mA mA