POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation RECTIFIER DIODE POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519 Sales Office: Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510 AR371 Repetitive voltage up to Mean forward current Surge current 3400 V 920 A 5.6 kA TARGET SPECIFICATION nov 02 - ISSUE : 02 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V RRM Repetitive peak reverse voltage 150 3400 V V RSM Non-repetitive peak reverse voltage 150 3500 V I RRM Repetitive peak reverse current 150 50 mA V=VRRM CONDUCTING I F (AV) Mean forward current 180° sin ,50 Hz, Th=55°C, double side cooled 920 A I F (AV) Mean forward current 180° sin ,50 Hz, Tc=85°C, double side cooled 910 A I FSM Surge forward current Sine wave, 10 ms without reverse voltage 150 5.6 kA 157 x 1E3 A²s Forward current = 25 I² t I² t V FM Forward voltage V F(TO) Threshold voltage 150 0.70 r F Forward slope resistance 150 0.660 V V mohm SWITCHING t rr Reverse recovery time Q rr Reverse recovery charge I rr Peak reverse recovery current µs 150 µC A MOUNTING R th(j-h) Thermal impedance, DC Junction to heatsink, double side cooled 50 °C/kW R th(c-h) Thermal impedance Case to heatsink, double side cooled 15 °C/kW T Operating junction temperature F j -30 / Mounting force 8.0 Mass 85 ORDERING INFORMATION : AR371 S 34 standard specification VRRM/100 150 °C / 9.0 kN g POSEICO AR371 RECTIFIER DIODE TARGET SPECIFICATION POSEICO SPA POwer SEmiconductors Italian COrporation nov 02 - ISSUE : 02 DISSIPATION CHARACTERISTICS SQUARE WAVE Th [°C] 170 150 130 110 90 30° 60° 70 90° 120° 180° DC 50 0 200 400 600 800 1000 1200 1400 IF(AV) [A] PF(AV) [W] 2000 1800 120 1600 180° 90° DC 60° 1400 30° 1200 1000 800 600 400 200 0 0 200 400 600 800 IF(AV) [A] 1000 1200 1400 AR371 RECTIFIER DIODE TARGET SPECIFICATION POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation nov 02 - ISSUE : 02 DISSIPATION CHARACTERISTICS SINE WAVE Th [°C] 170 150 130 110 90 30° 60° 90° 70 180° 120° 50 0 200 400 600 800 1000 IF(AV) [A] PF(AV) [W] 2000 1800 180° 120° 1600 1400 90° 60° 1200 30° 1000 800 600 400 200 0 0 200 400 600 IF(AV) [A] 800 1000 AR371 RECTIFIER DIODE POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation TARGET SPECIFICATION nov 02 - ISSUE : 02 SURGE CHARACTERISTIC Tj = 150 °C 3000 6 2500 5 2000 4 ITSM [kA] Forward Current [A] FORWARD CHARACTERISTIC Tj = 150 °C 1500 3 1000 2 500 1 0 0 0.6 1.6 2.6 1 Forward Voltage [V] 10 n° cycles TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 60.0 Zth j-h [°C/kW] 50.0 40.0 30.0 20.0 10.0 0.0 0.001 0.01 0.1 1 10 100 t[s] Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SpA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. 100