TI ISO122UE4 Precision lowest cost isolation amplifier Datasheet

ISO122
Precision Lowest Cost
ISOLATION AMPLIFIER
FEATURES
APPLICATIONS
● 100% TESTED FOR HIGH-VOLTAGE
BREAKDOWN
● INDUSTRIAL PROCESS CONTROL:
Transducer Isolator, Isolator for Thermocouples, RTDs, Pressure Bridges, and
Flow Meters, 4mA to 20mA Loop Isolation
● GROUND LOOP ELIMINATION
● MOTOR AND SCR CONTROL
●
●
●
●
●
RATED 1500Vrms
HIGH IMR: 140dB at 60Hz
BIPOLAR OPERATION: VO = ±10V
16-PIN PLASTIC DIP AND 28-LEAD SOIC
EASE OF USE: Fixed Unity Gain
Configuration
● POWER MONITORING
● PC-BASED DATA ACQUISITION
● TEST EQUIPMENT
● 0.020% max NONLINEARITY
● ±4.5V to ±18V SUPPLY RANGE
DESCRIPTION
The ISO122 is a precision isolation amplifier incorporating a novel duty cycle modulation-demodulation
technique. The signal is transmitted digitally across
a 2pF differential capacitive barrier. With digital modulation the barrier characteristics do not affect signal
integrity, resulting in excellent reliability and good high
frequency transient immunity across the barrier. Both
barrier capacitors are imbedded in the plastic body of
the package.
VIN
VOUT
The ISO122 is easy to use. No external components
are required for operation. The key specifications are
0.020% max nonlinearity, 50kHz signal bandwidth,
and 200µV/°C VOS drift. A power supply range of
±4.5V to ±18V and quiescent currents of ±5.0mA on
VS1 and ±5.5mA on VS2 make these amplifiers ideal
for a wide range of applications.
The ISO122 is available in 16-pin plastic DIP and 28lead plastic surface mount packages.
International Airport Industrial Park • Mailing Address: PO Box 11400
Tel: (520) 746-1111 • Twx: 910-952-1111 • Cable: BBRCORP •
©
SBOS160
1989 Burr-Brown Corporation
–VS2
Gnd
+VS2
–VS1
+VS1
Gnd
• Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706
Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132
PDS-857F
Printed in U.S.A. November, 1993
SPECIFICATIONS
At TA = +25°C , VS1 = VS2 = ±15V, and RL = 2kΩ unless otherwise noted.
ISO122P/U
PARAMETER
CONDITIONS
ISOLATION
Voltage Rated Continuous AC 60Hz
100% Test (1)
Isolation Mode Rejection
Barrier Impedance
Leakage Current at 60Hz
GAIN
Nominal Gain
Gain Error
Gain vs Temperature
Nonlinearity(2)
1s, 5pc PD
60Hz
MIN
TYP
TYP
MAX
UNITS
*
VAC
VAC
dB
Ω || pF
µArms
140
1014 || 2
0.18
*
*
*
0.5
VO = ±10V
1
±0.05
±10
±0.016
±20
±200
±2
4
OUTPUT
Voltage Range
Current Drive
Capacitive Load Drive
Ripple Voltage(3)
TEMPERATURE RANGE
Specification
Operating
Storage
θJA
θJC
MIN
*
*
VISO = 240Vrms
INPUT
Voltage Range
Resistance
POWER SUPPLIES
Rated Voltage
Voltage Range
Quiescent Current: VS1
VS2
MAX
1500
2400
INPUT OFFSET VOLTAGE
Initial Offset
vs Temperature
vs Supply
Noise
FREQUENCY RESPONSE
Small Signal Bandwidth
Slew Rate
Settling Time
0.1%
0.01%
Overload Recover Time
ISO122JP/JU
*
*
*
±0.025
±0.50
±0.020
±50
*
*
*
*
*
±0.050
*
V/V
%FSR
ppm/°C
%FSR
mV
µV/°C
mV/V
µV/√Hz
±10
±12.5
200
*
*
*
V
kΩ
±10
±5
±12.5
±15
0.1
20
*
*
*
*
*
*
V
mA
µF
mVp-p
50
2
*
*
kHz
V/µs
50
350
150
*
*
*
µs
µs
µs
VO = ±10V
±15
±4.5
±5.0
±5.5
–25
–25
–40
100
65
*
±18
±7.0
±7.0
*
+85
+85
+85
*
*
*
*
*
*
*
*
*
*
*
*
*
V
V
mA
mA
°C
°C
°C
°C/W
°C/W
* Specification same as ISO122P/U.
NOTES: (1) Tested at 1.6 X rated, fail on 5pC partial discharge. (2) Nonlinearity is the peak deviation of the output voltage from the best-fit straight line. It is expressed
as the ratio of deviation to FSR. (3) Ripple frequency is at carrier frequency (500kHz).
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.
®
ISO122
2
CONNECTION DIAGRAM
Top View —P Package
Top View—U Package
+VS1 1
16 Gnd
+VS1 1
28 Gnd
–VS1 2
15 VIN
–VS1 2
27 VIN
VOUT
7
10 –VS2
VOUT 13
16 –VS2
Gnd
8
9
Gnd 14
15 +VS2
+VS2
ABSOLUTE MAXIMUM RATINGS
PACKAGE INFORMATION(1)
MODEL
ISO122P
ISO122JP
ISO122U
ISO122JU
PACKAGE
PACKAGE DRAWING
NUMBER
16-Pin Plastic DIP
16-Pin Plastic DIP
28-Pin Plastic SOIC
28-Pin Plastic SOIC
238
238
217-1
217-1
Supply Voltage ................................................................................... ±18V
VIN ......................................................................................................±100V
Continuous Isolation Voltage ..................................................... 1500Vrms
Junction Temperature .................................................................... +150°C
Storage Temperature ....................................................................... +85°C
Lead Temperature (soldering, 10s) ................................................ +300°C
Output Short to Common ......................................................... Continuous
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix D of Burr-Brown IC Data Book.
ORDERING INFORMATION
MODEL
ISO122P
ISO122JP
ISO122U
ISO122JU
PACKAGE
NONLINEARITY
MAX %FSR
Plastic DIP
Plastic DIP
Plastic SOIC
Plastic SOIC
±0.020
±0.050
±0.020
±0.050
®
3
ISO122
TYPICAL PERFORMANCE CURVES
TA = +25°C, VS = ±15V unless otherwise noted.
SINE RESPONSE
(f = 2kHz)
SINE RESPONSE
(f = 20kHz)
+10
Output Voltage (V)
Output Voltage (V)
+10
0
–10
0
500
0
–10
0
1000
50
STEP RESPONSE
STEP RESPONSE
+10
+10
Output Voltage (V)
Output Voltage (V)
100
Time (µs)
Time (µs)
0
–10
0
500
0
–10
50
0
1000
100
Time (µs)
Time (µs)
ISOLATION VOLTAGE
vs FREQUENCY
IMR vs FREQUENCY
160
Max DC Rating
140
120
1k
IMR (dB)
Peak Isolation Voltage
2.1k
Degraded
Performance
100
80
100
Typical
Performance
60
40
0
100
1k
10k
100k
1M
10M
1
100M
100
1k
10k
Frequency (Hz)
Frequency (Hz)
®
ISO122
10
4
100k
1M
TYPICAL PERFORMANCE CURVES
TA = +25°C, VS = ±15V unless otherwise noted.
ISOLATION LEAKAGE CURRENT
vs FREQUENCY
PSRR vs FREQUENCY
60
54
100mA
Leakage Current (rms)
PSRR (dB)
10mA
40
+VS1 , +VS2
–VS1 , –VS2
20
1mA
1500Vrms
100µA
10µA
240Vrms
1µA
0.1µA
0
1
10
100
1k
10k
100k
1
1M
10
100
1k
10k
100k
1M
Frequency (Hz)
Frequency (Hz)
SIGNAL RESPONSE TO
INPUTS GREATER THAN 250kHz
100kHz
Freq
Out
V OUT / VIN dBm
0
250
–10
200
–20
150
–30
100
–40
50
0
500kHz
1MHz
Frequency Out
VOUT/VIN
1.5MHz
Input Frequency
(NOTE: Shaded area shows aliasing frequencies that cannot
be removed by a low-pass filter at the output.)
®
5
ISO122
THEORY OF OPERATION
The ISO122 isolation amplifier uses an input and an output
section galvanically isolated by matched 1pF isolating capacitors built into the plastic package. The input is dutycycle modulated and transmitted digitally across the barrier.
The output section receives the modulated signal, converts it
back to an analog voltage and removes the ripple component
inherent in the demodulation. Input and output sections are
fabricated, then laser trimmed for exceptional circuitry matching common to both input and output sections. The sections
are then mounted on opposite ends of the package with the
isolating capacitors mounted between the two sections. The
transistor count of the ISO122 is 250 transistors.
VOUT pin equal to VIN. The sample and hold amplifiers in the
output feedback loop serve to remove undesired ripple
voltages inherent in the demodulation process.
BASIC OPERATION
SIGNAL AND SUPPLY CONNECTIONS
Each power supply pin should be bypassed with 1µF tantalum capacitors located as close to the amplifier as possible.
The internal frequency of the modulator/demodulator is set
at 500kHz by an internal oscillator. Therefore, if it is desired
to minimize any feedthrough noise (beat frequencies) from
a DC/DC converter, use a π filter on the supplies (see Figure
4). ISO122 output has a 500kHz ripple of 20mV, which can
be removed with a simple two pole low-pass filter with a
100kHz cutoff using a low cost op amp. See Figure 4.
MODULATOR
An input amplifier (A1, Figure 1) integrates the difference
between the input current (VIN/200kΩ) and a switched
±100µA current source. This current source is implemented
by a switchable 200µA source and a fixed 100µA current
sink. To understand the basic operation of the modulator,
assume that VIN = 0.0V. The integrator will ramp in one
direction until the comparator threshold is exceeded. The
comparator and sense amp will force the current source to
switch; the resultant signal is a triangular waveform with a
50% duty cycle. The internal oscillator forces the current
source to switch at 500kHz. The resultant capacitor drive is
a complementary duty-cycle modulation square wave.
The input to the modulator is a current (set by the 200kΩ
integrator input resistor) that makes it possible to have an
input voltage greater than the input supplies, as long as the
output supply is at least ±15V. It is therefore possible when
using an unregulated DC/DC converter to minimize PSR
related output errors with ±5V voltage regulators on the
isolated side and still get the full ±10V input and output
swing. An example of this application is shown in Figure
10.
DEMODULATOR
The sense amplifier detects the signal transitions across the
capacitive barrier and drives a switched current source into
integrator A2. The output stage balances the duty-cycle
modulated current against the feedback current through the
200kΩ feedback resistor, resulting in an average value at the
CARRIER FREQUENCY CONSIDERATIONS
The ISO122 amplifier transmits the signal across the isolation barrier by a 500kHz duty cycle modulation technique.
For input signals having frequencies below 250kHz, this
system works like any linear amplifier. But for frequencies
above 250kHz, the behavior is similar to that of a sampling
amplifier. The signal response to inputs greater than 250kHz
Isolation Barrier
200µA
Sense
150pF
200kΩ
VIN
200µA
1pF
1pF
1pF
1pF
Sense
150pF
100µA
200kΩ
100µA
VOUT
–
–
||
+
A1
A2
S/H
G=1
Osc
+VS1 Gnd 1 –VS1
+VS2
FIGURE 1. Block Diagram.
®
ISO122
6
+
S/H
G=6
Gnd 2 –VS2
HIGH VOLTAGE TESTING
Burr-Brown Corporation has adopted a partial discharge test
criterion that conforms to the German VDE0884 Optocoupler Standards. This method requires the measurement of
minute current pulses (<5pC) while applying 2400Vrms,
60Hz high voltage stress across every ISO122 isolation
barrier. No partial discharge may be initiated to pass this
test. This criterion confirms transient overvoltage (1.6 x
1500Vrms) protection without damage to the ISO122. Lifetest
results verify the absence of failure under continuous rated
voltage and maximum temperature.
performance curve shows this behavior graphically; at input
frequencies above 250kHz the device generates an output
signal component of reduced magnitude at a frequency
below 250kHz. This is the aliasing effect of sampling at
frequencies less than 2 times the signal frequency (the
Nyquist frequency). Note that at the carrier frequency and its
harmonics, both the frequency and amplitude of the aliasing
go to zero.
ISOLATION MODE VOLTAGE INDUCED ERRORS
IMV can induce errors at the output as indicated by the plots
of IMV vs Frequency. It should be noted that if the IMV
frequency exceeds 250kHz, the output also will display
spurious outputs (aliasing), in a manner similar to that for
VIN > 250kHz and the amplifier response will be identical to
that shown in the Signal Response to Inputs Greater Than
250kHz performance curve. This occurs because IMVinduced errors behave like input-referred error signals. To
predict the total error, divide the isolation voltage by the
IMR shown in the IMR vs Frequency curve and compute the
amplifier response to this input-referred error signal from
the data given in the Signal Response to Inputs Greater than
250kHz performance curve. For example, if a 800kHz
1000Vrms IMR is present, then a total of [(–60dB) +
(–30dB)] x (1000V) = 32mV error signal at 200kHz plus a
1V, 800kHz error signal will be present at the output.
This new test method represents the “state of the art” for
non-destructive high voltage reliability testing. It is based on
the effects of non-uniform fields that exist in heterogeneous
dielectric material during barrier degradation. In the case of
void non-uniformities, electric field stress begins to ionize
the void region before bridging the entire high voltage
barrier. The transient conduction of charge during and after
the ionization can be detected externally as a burst of 0.010.1µs current pulses that repeat on each AC voltage cycle.
The minimum AC barrier voltage that initiates partial discharge is defined as the “inception voltage.” Decreasing the
barrier voltage to a lower level is required before partial
discharge ceases and is defined as the “extinction voltage.”
We have characterized and developed the package insulation
processes to yield an inception voltage in excess of 2400Vrms
so that transient overvoltages below this level will not
damage the ISO122. The extinction voltage is above
1500Vrms so that even overvoltage induced partial discharge will cease once the barrier voltage is reduced to the
1500Vrms (rated) level. Older high voltage test methods
relied on applying a large enough overvoltage (above rating)
to break down marginal parts, but not so high as to damage
good ones. Our new partial discharge testing gives us more
confidence in barrier reliability than breakdown/no breakdown criteria.
HIGH IMV dV/dt ERRORS
As the IMV frequency increases and the dV/dt exceeds
1000V/µs, the sense amp may start to false trigger, and the
output will display spurious errors. The common mode
current being sent across the barrier by the high slew rate is
the cause of the false triggering of the sense amplifier.
Lowering the power supply voltages below ±15V may
decrease the dV/dt to 500V/µs for typical performance.
Isolation Barrier
A0
ISO150
+15V –15V
VIN
VOUT
1
–VS2
1
Gnd
VIN
Gnd
+VS2
+VS1
–
VS1
1µF
+15V –15V
2
9
15 15
10
7
VOUT
8
ISO122P
16
±VS1
1µF
6
2
7 PGA
8 102
45
3
A1
±VS2
1µF
1µF
FIGURE 3. Programmable-Gain Isolation Channel with
Gains of 1, 10, and 100.
FIGURE 2. Basic Signal and Power Connections.
®
7
ISO122
Isolation Barrier
13kΩ
100pF
385Ω
13kΩ
VIN
2
ISO122
–VS2
Gnd
–
6
4700pF
OPA602
3
VOUT = –VIN
+
Gnd
+VS2
–VS1
+VS1
10µH
10µH
10µH
±VS1
10µH
±VS2
1µF
1µF
1µF
1µF 1µF
1µF
1µF 1µF
FIGURE 4. Optional π Filter to Minimize Power Supply Feedthrough Noise; Output Filter to Remove 500kHz Carrier Ripple.
For more information concerning output filter refer to AB-023.
This Section Repeated 49 Times.
ISO122P
10kΩ
1
e1 = 12V
+V
9
10kΩ
15
V = e1
2
7
8
10
e2 = 12V
2
–V
Multiplexer
16
Charge/Discharge
Control
ISO122P
e49=12V
1
15
+V
9
7
e50=12V
2
+V
–V
7
4
25kΩ
25kΩ
25kΩ
–
5
8
10kΩ
10
2
10kΩ
–V
+
3
25kΩ
16
INA105
6
V = e50
2
1
FIGURE 5. Battery Monitor for a 600V Battery Power System. (Derives Input Power from the Battery.)
®
ISO122
8
Control
Section
+15V
2
10.0V
6
REF
102
Thermocouple
4
R4
+15V –15V
R1
27kΩ
+15V
Isothermal
Block with
1N4148 (1)
1MΩ
+15V –15V
1
12
RG
R2
2
2
4 +In
5
INA101
10
11 –In
1
10
15
14
R5
50Ω
R6
7
VOUT
8
13
16
3
R3
100Ω
ISO122P
9
–15V
100
Zero Adj
ISA
TYPE
E
Ground Loop Through Conduit
J
NOTE: (1) –2.1mV/°C at 2.00µA.
K
T
MATERIAL
SEEBACK
COEFFICIENT
(µV/°C)
R2
(R3 = 100Ω)
R4
(R5 + R6 = 100Ω)
58.5
3.48kΩ
56.2kΩ
50.2
4.12kΩ
64.9kΩ
39.4
5.23kΩ
80.6kΩ
38.0
5.49kΩ
84.5kΩ
Chromel
Constantan
Iron
Constantan
Chromel
Alumel
Copper
Constantan
FIGURE 6. Thermocouple Amplifier with Ground Loop Elimination, Cold Junction Compensation, and Up-scale Burn-out.
1mA
1mA
10
8
5
XTR101
RS
4-20mA
0.01µF
11
3
+VS =15V
on PWS740
6
4
R1 = 100Ω
7
3
16
1
14
2 RCV420
5, 13
10
4
RTD
(PT100)
ISO122P
15
+V
15
9
7
8
11
R2 = 2.5kΩ
10
12
VOUT
0V-5V
2
16
–V
2mA
Gnd
–VS = –15V
on PWS740
FIGURE 7. Isolated 4-20mA Instrument Loop. (RTD shown.)
®
9
ISO122
RS
10kΩ
2kΩ
VL
RD1
Load
0.1µF
IL
RD2
2
2kΩ
ISO122P
+V
16
–
OPA602
3
6
(V1)
IL= V1
+
10RS
0.01µF
9
7
15
8
ISO122P
10
+V
2
1
–V
9
15
7
16
10
2
0.3µF
8
0.3µF
1
–V
0.3µF
XY
10
1
4
PWS740-3
3
6
X
MPY100
0.3µF
3
2
1
6
5
4
Y
(V2)
PL= V2(RD1 + RD2)
RS RD2
PWS740-2
1
4
PWS740-3
3
6
(V3)
VL= V3(RD1 + RD2)
RD2
3
2
1
6
5
4
To PWS740-1
PWS740-2
To PWS740-1
FIGURE 8. Isolated Power Line Monitor.
®
ISO122
10
Channel 1
ISO122P
10
15
VIN
7
VOUT
8
9
16
2
1
0.3µF
0.3µF
0.3µF
0.3µF
Channel 2
(Same as Channel 1.)
1
4
PWS740-3
+V
3
10µF
2
1
PWS740-3
6
3
4
1
3
6
3
2
1
PWS740-2
20µH
PWS740-2
4
5
6
0.3µF 4
5
6
8
6
5
PWS740-1
4
3
Channel 3
(Same as Channel 1.)
Channel 4
(Same as Channel 1.)
FIGURE 9. Three-Port, Low-Cost, Four-Channel Isolated, Data Acquisition System.
®
11
ISO122
+15V
9
VIN , up to
± 10V Swing
7
ISO
122P
VOUT
8
10
1
16
2
–15
+5V
Regulator
MC78L05
0.1µF
1
0.1µF
1
2
3
3
–5V
Regulator
MC79L05
2
0.33µF 0.33µF
4
PWS740–3
To PWS740–2,–1
NOTE: The input supplies can be subregulated to ±5V to reduce
PSR related errors without reducing the ±10V input range.
FIGURE 10. Improved PSR Using External Regulator.
VS1 (+15V)
VS
(V)
INPUT RANGE
(V)(1)
20+
15
12
–2 to +10
–2 to +5
–2 to +2
7
INA105
Difference Amp
2
5
R1
10kΩ
6
Signal Source
VIN
+
RS
15 In
1
RC
Gnd
16
4
1
Reference
IN4689
5.1V
9
ISO
ISO
122P
122
122P
(1)
R4
R3
3
+VS2 (+15V)
R2
7
8
VOUT = VIN
10
2
–VS1
Com 2
–VS2 (–15V)
NOTE: Since the amplifier is unity gain, the input
range is also the output range. The output can go to
–2V since the output section of the ISO amp operates
from dual supplies.
NOTE: (1) Select to match RS .
FIGURE 11. Single Supply Operation of the ISO122P Isolation Amplifier. For additional information see AB-009.
®
ISO122
12
1
2
4
5
6
HPR117
–15V, 20mA
VIN
Input
Gnd
+15V, 20mA
16
15
10
9
Gnd V IN
V–
V+
INPUT
SECTION
V+
V–
1
2
ISO122P
Auxiliary
Isolated
Power
Output
OUTPUT
SECTION
V
O
7
Gnd
8
+15V
Output
Gnd
–15V
VO
FIGURE 12. Input-Side Powered ISO Amp. For additional information refer to AB-024.
+15V
Gnd
1
2
5
5
6
HPR117
HPR117
6
4
4
2
1
VIN
–15V, 20mA
Input
Gnd
+15V, 20mA
16
15
10
9
Gnd V IN
V–
V+
INPUT
SECTION
Auxiliary
Isolated
Power
Output
V+
V–
1
2
ISO122P
Auxiliary
Isolated
Power
Output
OUTPUT
SECTION
V
O
7
Gnd
8
+15V, 20mA
Output
Gnd
–15V, 20mA
VO
FIGURE 13. Powered ISO Amp with Three-Port Isolation. For additional information refer to AB-024.
®
13
ISO122
PACKAGE OPTION ADDENDUM
www.ti.com
11-Apr-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Top-Side Markings
(3)
(4)
ISO122JP
ACTIVE
PDIP
NVF
8
25
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
-25 to 85
ISO122JP
ISO122JPE4
ACTIVE
PDIP
NVF
8
25
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
-25 to 85
ISO122JP
ISO122JU
ACTIVE
SOIC
DVA
8
20
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-25 to 85
ISO
122JU
ISO122JU/1K
ACTIVE
SOIC
DVA
8
1000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-25 to 85
ISO
122JU
ISO122JU/1KE4
ACTIVE
SOIC
DVA
8
1000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-25 to 85
ISO
122JU
ISO122JUE4
ACTIVE
SOIC
DVA
8
20
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-25 to 85
ISO
122JU
ISO122P
ACTIVE
PDIP
NVF
8
25
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
-25 to 85
ISO122P
ISO122PE4
ACTIVE
PDIP
NVF
8
25
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
-25 to 85
ISO122P
ISO122U
ACTIVE
SOIC
DVA
8
20
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-25 to 85
ISO
122U
ISO122U/1K
ACTIVE
SOIC
DVA
8
1000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-25 to 85
ISO
122U
ISO122U/1KE4
ACTIVE
SOIC
DVA
8
1000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-25 to 85
ISO
122U
ISO122UE4
ACTIVE
SOIC
DVA
8
20
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-25 to 85
ISO
122U
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
11-Apr-2013
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
24-Jul-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
ISO122JU/1K
SOIC
DVA
8
1000
330.0
24.4
10.9
18.3
3.2
12.0
24.0
Q1
ISO122U/1K
SOIC
DVA
8
1000
330.0
24.4
10.9
18.3
3.2
12.0
24.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
24-Jul-2013
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
ISO122JU/1K
SOIC
DVA
8
1000
367.0
367.0
45.0
ISO122U/1K
SOIC
DVA
8
1000
367.0
367.0
45.0
Pack Materials-Page 2
MECHANICAL DATA
MPDI072 – AUGUST 2001
NVF (R-PDIP-T8/16)
PLASTIC DUAL-IN-LINE
0.775 (21,34)
0.735 (18,67)
D
16
9
0.280 (7,11)
0.240 (6,10)
Index
Area
1
D
8
0.195 (4,95)
0.115 (2,92)
0.045 (1,14)
0.030 (0,76)
0.210 (5,33)
MAX
0.070 (1,78)
0.045 (1,14)
0.325 (8,26)
0.300 (7,62)
C
Seating Plane
Base Plane
E
0.005 (0,13)
MIN 4 PL
D
1/2 Lead
0.150 (3,81)
0.115 (2,92)
0.100 (2,54)
0.022 (0,56)
0.014 (0,36)
0.010 (0,25) M
0.015 (0,38)
MIN
C
0.300 (7,63)
0.014 (0,36)
0.008 (0,20)
0.060 (1,52)
0.000 (0,00) F
0.430 (10,92)
MAX
F
4202501/A 08/01
A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. Falls within JEDEC MS-001-BB with the exception of lead
count.
D. Dimensions do not include mold flash or protrusions.
Mold flash or protrusions shall not exceed 0.010 (0,25).
E. Dimensions measured with the leads constrained to be
perpendicular to Datum C.
F. Dimensions are measured at the lead tips with the leads
unconstrained.
G. A visual index feature must be located within the
cross-hatched area.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
1
MECHANICAL DATA
MPDS105 – AUGUST 2001
DVA (R-PDSO-G8/28)
PLASTIC SMALL-OUTLINE
C
A
18,10
17,70
0,25 M B M
28
15
B
7,60
7,40
10,65
10,01
D
Index
Area
1
14
2,65
2,35
C
0,75
0,25 x 45°
Seating
Plane
1,27
G
0,51
0,33
0,30
0,10
0,10
0,32
0,23
0,25 M C A M B S
0°–8°
F
1,27
0,40
4202103/B 08/01
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C.
Body length dimension does not include mold
flash, protrusions, or gate burrs. Mold flash, protrusions,
and gate burrs shall not exceed 0,15 mm per side.
D. Body width dimension does not include inter-lead flash
or portrusions. Inter-lead flash and protrusions
shall not exceed 0,25 mm per side.
E. The chamfer on the body is optional. If it is not present,
a visual index feature must be located within the
cross-hatched area.
G. Lead width, as measured 0,36 mm or greater
above the seating plane, shall not exceed a
maximum value of 0,61 mm.
H. Lead-to-lead coplanarity shall be less than
0,10 mm from seating plane.
I. Falls within JEDEC MS-013-AE with the exception
of the number of leads.
F. Lead dimension is the length of terminal for soldering
to a substrate.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
1
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