TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/301 DEVICES LEVELS 2N918 2N918UB JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 15 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 3.0 Vdc IC 50 mAdc PT 200 mW Top & Tstg -65 to +200 °C Collector Current Total Power Dissipation @ TA = +25°C (1) Operating & Storage Junction Temperature Range TO-72 2N918 Note: 1) Derate linearly 1.14mW/°C above TA > 25°C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. V(BR)CEO 15 Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 3mAdc Collector-Base Cutoff Current VCB = 30Vdc VCB = 25Vdc VCB = 25Vdc; TA = +150°C Emitter-Base Cutoff Current VEB = 3.0Vdc VEB = 2.5Vdc Forward-Current Transfer Ratio ICBO IEBO IC = 0.5mAdc, VCE = 10Vdc IC = 3.0mAdc, VCE = 1.0Vdc Vdc 1.0 10 1.0 µAdc ηAdc µAdc 10 10 µAdc ηAdc 10 hFE 20 IC = 10mAdc, VCE = 10Vdc 20 IC = 3.0mAdc, VCE = 1.0Vdc; TA = -55°C 10 200 Collector-Emitter Saturation Voltage IC = 10mAdc, IB = 1.0mAdc VCE(sat) 0.4 Vdc Base-Emitter Voltage IC = 10mAdc, IB = 1.0mAdc VBE(sat) 1.0 Vdc T4-LDS-0010 Rev. 3 (101342) 3 PIN 2N918UB Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude of Small-Signal Short-Circuit - Forward Current Transfer Ratio IC = 4mAdc, VCE = 10Vdc, f = 100MHz Symbol Min. Max. |hfe| 6.0 18 Unit Output Capacitance VCB = 0Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Cobo1 3.0 VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Cobo2 1.7 Input Capacitance VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz Cibo 2.0 pF NF 6.0 dB Noise Figure (1) VCE = 6V, IC = 1.0mA, f = 60MHz gs = 2.5mmho pF Small-Signal Power Gain (1) VCB = 12V, IC = 6.0mA, f = 200MHz Gpe Collector-Base Time Constant (1) VCB = 10V, IE = -4.0mA, f = 79.8MHz Rb’CC Oscillator Power Output (1) VCB = 1.5V, IC = 8.0mA, f ≥ 500MHz Po 30 mW Collector Efficiency VCB = 15V, IC = 8.0mA, f > 500MHz n 25 % 15 dB 25 ps NOTES: (1) For more detail see MIL-PRF-19500/301 T4-LDS-0010 Rev. 3 (101342) Page 2 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS Dimensions Symbol CD Inches Min Max .178 .195 CH .170 .210 4.32 5.33 HD .209 .230 5.31 5.84 LC Millimeters Min Max 4.52 4.95 .100 TP 2.54 TP Note 5 5 7,8 LD .016 .021 .406 .533 7,8 LL .500 .750 12.70 19.05 7,8 LU .016 .019 .406 .483 L1 .050 1 .27 L2 .250 6.35 P .100 2.54 Q .040 1.02 TL .028 .048 .71 1.22 TW .036 .046 .91 1.17 r α .007 5 .18 45° TP NOTES: 1. Dimension are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 inch (0.28 mm). 4. Dimension TL measured from maximum HD. Body contour optional within zone defined by HD, CD, and Q. 5. 6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.025 -0.00 mm) below seating plane shall be within .007 inch (0.18mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is 7. uncontrolled in L1 and beyond LL minimum. 8. All four leads. Dimension r (radius) applies to both inside corners of tab. 9. 10. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. 11. Lead 1 = emitter, lead 2 = base, lead 3 = collector, lead 4 = case (electrically connected). FIGURE 1. Physical dimensions for 2N918 (TO-72). T4-LDS-0010 Rev. 3 (101342) Page 3 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS Dimensions Millimeters Min Max 1.17 1.42 Symbol Dimensions BH Inches Min Max .046 .056 Note Symbol LS1 Inches Min Max .036 .040 Millimeters Min Max 0.91 1.02 BL .115 .128 2.92 3.25 LS2 .071 .079 1.80 2.01 BW .085 .108 2.16 2.74 LW .016 .024 0.41 0.61 CL .128 3.25 r .008 .203 CW .108 2.74 r1 .012 .305 r2 .022 .559 LL1 .022 .038 0.56 0.97 LL2 .017 .035 0.4. 0.89 Note NOTES: 1. 2. 3. 4. 5. 6. Dimensions are in inches. Millimeters are given for general information only. Hatched areas on package denote metallized areas. Lid material: Kovar. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. FIGURE 2. Physical dimensions for 2N918UB, surface mount. T4-LDS-0010 Rev. 3 (101342) Page 4 of 4