Chenmko CHUMF21PT Power management (dual transistor) Datasheet

CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
Power Management (Dual Transistor)
CHUMF21PT
Tr1:VOLTAGE 12 Volts CURRENT 0.5 Ampere
DTr2:VOLTAGE 50 Volts CURRENT 50 mAmpere
APPLICATION
* Power management circuit
FEATURE
* Small surface mounting type. (SC-88/SOT-363)
* Power switching circuit in a single package.
* Mounting cost and area can be cut in half.
* Both the 2SA2018 & CHDTC114E in one package.
* Built in bias resistor(R1=10kΩ, Typ. )
SC-88/SOT-363
(1)
(6)
0.65
1.2~1.4
2.0~2.2
0.65
(4)
0.15~0.35 (3)
1.15~1.35
0.8~1.1
0.08~0.15
0~0.1
0.1 Min.
CIRCUIT
6
4
R1
Tr1
2.15~2.45
R2
DTr2
1
3
SC-88/SOT-363
Dimensions in millimeters
2SA2018 LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
Collector-base voltage
−
-15
V
VCEO
Collector-emitter voltage
−
-12
V
VEBO
Emitter-base voltage
−
-6
V
−
-500
NOTE.1
−
-1000
NOTE.2
−
150
+150
IC
ICP
DC Output current
Pc
power dissipation
TSTG
Storage temperature
−55
TJ
Junction temperature
−
Note
1. Single Pulse Pw=1ms
2. 120mW per element must not be exceeded
Each teminal mounted on a recommended land.
150
mA
mW
O
C
O
C
CHDTC114E LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
Supply voltage
−
50
V
VIN
Input voltage
-10
+40
V
−
50
NOTE.1
−
100
NOTE.2
−
150
mW
IO
DC Output current
IC(Max.)
mA
PC
Power dissipation
TSTG
Storage temperature
−55
+150
O
C
TJ
Junction temperature
−
150
O
C
Note
1. Characteristics of built-in transistor.
2. Each terminal mounter on a recommended land.
2SA2018 CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
CONDITIONS
MIN.
BVCEO Collector-emitter breakdown voltage
IC=-1mA
-12
−
−
V
BVCBO Collector-base breakdown voltage
IC=-10uA
-15
−
−
V
Emitter-base breakdown voltage
IE=-10uA
-6
−
V
ICBO
Collector cut-off current
VCB=-15V
−
−
−
-100
nA
IEBO
Emitter cut-off current
DC current gain
VEB=-6V
−
−
270
−
-100
680
nA
VCE=-2V,IC=-10mA
IC=-200mA,IB=-10mA
-250
mV
−
pF
MHz
BVEBO
hFE
VCE(sat)
Cob
fT
PARAMETER
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
TYP.
−
−
VCB=-10V,IE=0mA,f=1MHZ
-100
6.5
−
VCE=-2V,IE=10mA,f=100MHZ
260
MAX.
−
UNIT
−
Note
1.Pulse test: tp≤300uS; δ≤0.02.
CHDTC114E CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VIoff)
Input off voltage
IO=100uA; VCC=5.0V
0.5
−
−
V
VI(on)
Input on voltage
IO=10mA; VO=0.3V
−
−
3.0
V
V
VO(on)
Output voltage
IO=10mA; II=0.5mA
−
0.1
0.3
II
Input current
VI=5V
−
−
0.88
mA
IC(off)
Output current
VI=0V; VCC=50V
−
−
0.5
uA
G1
DC current gain
IO=5mA; VO=5.0V
30
−
R1
Input resistor
R2/R1
fT
Resistor ratio
Transition frequency
Note
Pulse test: tp≤300uS; δ≤0.02.
IE=-5mA, VCE=10.0V
f=100MHz
=
−
−
7
10
13
KΩ
0.8
−
1.0
250
1.2
−
−
MHz
RATING CHARACTERISTIC CURVES ( CHUMF21PT )
2SA2018 Typical Electrical Characteristics
Fig.2 DC current gain vs. collector
current
Fig.1 Ground emitter propagation
characteristics
1000
VCE=2V
pulsed
O
O
DC CURRENT GAIN : hFE
100
Ta=25 C
O
O
Ta=-40 C
10
1
O
O
-40 C
100
10
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1
1.4
1000
O
Ta=25 C
pulsed
100
O
Ta=125 C
O
Ta=25 C
10
O
Ta=-40 C
1
1
10
100
COLLECTOR CURRENT : IC (mA)
1000
COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV)
Fig.3 Collector-emitter saturation voltage
vs. collector current ( I )
10
100
1000
COLLECTOR CURRENT : IC(mA)
BASE TO EMITTER VOLTAGE : VBE(V)
COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV)
VCE=2V
pulsed
Ta=125 C
25 C
Ta=125 C
COLLECTOR CURRENT : IC(mA)
1000
Fig.4 Collector-emitter saturation voltage
vs. collector current ( II )
1000
IC/IB=20
pulsed
100
O
Ta=125O C
Ta=25 C
O
Ta=-40 C
10
1
1
10
100
COLLECTOR CURRENT : IC (mA)
1000
RATING CHARACTERISTIC CURVES ( CHUMF21PT )
2SA2018 Typical Electrical Characteristics
1000
EMITTER INPUT CAPACITANCE : Cib (pF)
1000
IC/IB=20
pulsed
Ta=-40OOC
Ta=25 C
O
Ta=125 C
100
10
1
1
10
100
1000
COLLECTOR CURRENT : IC(mA)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
Fig.6 Gain bandwidth product vs.
collector current
TRANSITION FREQUENCY : fT(MHZ)
BASER SATURATION VOLTAGE : VBE(sat)(mV)
Fig.5 Base-emitter saturation voltage
vs. collector current
Fig.7 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
1000
IE=0A
f=1MHOZ
Ta=25 C
100
Cib
10
Cob
1
1
10
100
1000
COLLECTOR TO BASE VOLTAGE : VCB(V)
VCE=2V
O
Ta=25 C
pulsed
100
10
1
1
10
100
EMITTER CURRENT : IE(mA)
1000
RATING CHARACTERISTIC CURVES ( CHUMF21 )
CHDTC114E Typical Electrical Characteristics
Fig.1 Input voltage vs. output current
(ON characteristics)
100
Fig.2 Output current vs. input voltage
(OFF characteristics)
10m
5m
VO=0.3V
OUTPUT CURRENT : Io (A)
INPUT VOLTAGE : VI(on) (V)
50
20
10
Ta =- 40OC
O
25
= C
100OC
5
2
1
500m
200m
100m
100
200
500 1m
2m
2m
1m
500
VCC=5V
Ta=100OC
25OC
-40 OC
200
100
50
20
10
5
2
1
5m 10m 20m 50m 100m
0
0.5
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
1k
2.5
3.0
lO/lI=20
500m
Ta=100 C
25OC
-40OC
100
50
20
10
5
2
OUTPUT VOLTAGE : VO(on) (V)
DC CURRENT GAIN : GI
2.0
1
VO =5V
O
1
100 200
1.5
Fig.4 Output voltage vs. output
current
500
200
1.0
INPUT VOLTAGE : VI(off) (V)
Ta=100OC
25OC
-40 OC
200m
100m
50m
20m
10m
5m
2m
500 1m 2m
5m 10m 20m 50m100m
OUTPUT CURRENT : IO (A)
1m
100
200
500 1m
2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
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