POINN BDT60A Pnp silicon power darlington Datasheet

BDT60, BDT60A, BDT60B, BDT60C
PNP SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK
●
AUGUST 1993 - REVISED MARCH 1997
Designed for Complementary Use with
BDT61, BDT61A, BDT61B and BDT61C
TO-220 PACKAGE
(TOP VIEW)
●
50 W at 25°C Case Temperature
●
4 A Continuous Collector Current
B
1
●
Minimum hFE of 750 at 1.5 V, 3 A
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
BDT60
Collector-base voltage (IE = 0)
BDT60A
BDT60B
VCBO
BDT60C
Collector-emitter voltage (IB = 0)
BDT60B
UNIT
-60
-80
-100
V
-120
BDT60
BDT60A
VALUE
-60
VCEO
BDT60C
-80
-100
V
-120
V EBO
-5
V
Continuous collector current
IC
-4
A
Continuous base current
IB
-0.1
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Ptot
50
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Ptot
2
W
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
TA
-65 to +150
°C
Emitter-base voltage
Operating junction temperature range
Storage temperature range
Operating free-air temperature range
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BDT60, BDT60A, BDT60B, BDT60C
PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
BDT60
V (BR)CEO
ICEO
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
VEC
Collector-emitter
MAX
BDT60A
-80
BDT60B
-100
BDT60C
-120
IC = -30 mA
IB = 0
VCE = -30 V
IB = 0
BDT60
-0.5
Collector-emitter
V CE = -40 V
IB = 0
BDT60A
-0.5
cut-off current
V CE = -50 V
IB = 0
BDT60B
-0.5
V CE = -60 V
IB = 0
BDT60C
-0.5
VCB = -60 V
IE = 0
BDT60
-0.2
V CB = -80 V
IE = 0
BDT60A
-0.2
V CB = -100 V
IE = 0
BDT60B
-0.2
Collector cut-off
V CB = -120 V
IE = 0
BDT60C
-0.2
current
V CB = -30 V
IE = 0
TC = 150°C
BDT60
-2.0
V CB = -40 V
IE = 0
TC = 150°C
BDT60A
-2.0
V CB = -50 V
IE = 0
TC = 150°C
BDT60B
-2.0
V CB = -60 V
IE = 0
TC = 150°C
BDT60C
-2.0
VEB =
-5 V
IC = 0
VCE =
-3 V
IC =
-1.5 A
(see Notes 3 and 4)
-6 mA
IC =
-1.5 A
-3 V
IC =
-1.5 A
breakdown voltage
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
IB =
VCE =
voltage
Parallel diode
IE =
forward voltage
-1.5 A
(see Note 3)
TYP
UNIT
-60
V
mA
mA
-5
mA
(see Notes 3 and 4)
-2.5
V
(see Notes 3 and 4)
-2.5
V
-2.0
V
750
IB = 0
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
MIN
TYP
2.5
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
†
MIN
ton
Turn-on time
IC = -2 A
IB(on) = -8 mA
IB(off) = 8 mA
toff
Turn-off time
V BE(off) = 5 V
RL = 20 Ω
tp = 20 µs, dc ≤ 2%
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
2
TEST CONDITIONS
INFORMATION
TYP
1
µs
4.5
µs
BDT60, BDT60A, BDT60B, BDT60C
PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS115AD
20000
TC = -40°C
TC = 25°C
TC = 100°C
10000
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
1000
VCE = -3 V
tp = 300 µs, duty cycle < 2%
100
-0·5
-1·0
-5·0
TCS115AB
-2·0
tp = 300 µs, duty cycle < 2%
IB = IC / 100
-1·5
-1·0
-0·5
TC = -40°C
TC = 25°C
TC = 100°C
0
-0·5
IC - Collector Current - A
-1·0
-5·0
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS115AC
VBE(sat) - Base-Emitter Saturation Voltage - V
-3·0
-2·5
TC = -40°C
TC = 25°C
TC = 100°C
-2·0
-1·5
-1·0
IB = IC / 100
t p = 300 µs, duty cycle < 2%
-0·5
-0·5
-1·0
-5·0
IC - Collector Current - A
Figure 3.
PRODUCT
INFORMATION
3
BDT60, BDT60A, BDT60B, BDT60C
PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
-10
SAS115AB
-1·0
-0·1
BDT60
BDT60A
BDT60B
BDT60C
-0.01
-1·0
-10
-100
-1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS110AA
Ptot - Maximum Power Dissipation - W
60
50
40
30
20
10
0
0
25
50
75
100
TC - Case Temperature - °C
Figure 5.
PRODUCT
4
INFORMATION
125
150
BDT60, BDT60A, BDT60B, BDT60C
PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
ø
10,4
10,0
3,96
3,71
1,32
1,23
2,95
2,54
see Note B
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
1,70
1,07
0,97
0,61
1
2
14,1
12,7
3
2,74
2,34
5,28
4,88
VERSION 1
0,64
0,41
2,90
2,40
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
PRODUCT
MDXXBE
INFORMATION
5
BDT60, BDT60A, BDT60B, BDT60C
PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
PRODUCT
6
INFORMATION
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