BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK ● AUGUST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C TO-220 PACKAGE (TOP VIEW) ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current B 1 ● Minimum hFE of 750 at 1.5 V, 3 A C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDT60 Collector-base voltage (IE = 0) BDT60A BDT60B VCBO BDT60C Collector-emitter voltage (IB = 0) BDT60B UNIT -60 -80 -100 V -120 BDT60 BDT60A VALUE -60 VCEO BDT60C -80 -100 V -120 V EBO -5 V Continuous collector current IC -4 A Continuous base current IB -0.1 A Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Ptot 50 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Ptot 2 W Tj -65 to +150 °C Tstg -65 to +150 °C TA -65 to +150 °C Emitter-base voltage Operating junction temperature range Storage temperature range Operating free-air temperature range NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS AUGUST 1993 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN BDT60 V (BR)CEO ICEO ICBO IEBO hFE VCE(sat) VBE(on) VEC Collector-emitter MAX BDT60A -80 BDT60B -100 BDT60C -120 IC = -30 mA IB = 0 VCE = -30 V IB = 0 BDT60 -0.5 Collector-emitter V CE = -40 V IB = 0 BDT60A -0.5 cut-off current V CE = -50 V IB = 0 BDT60B -0.5 V CE = -60 V IB = 0 BDT60C -0.5 VCB = -60 V IE = 0 BDT60 -0.2 V CB = -80 V IE = 0 BDT60A -0.2 V CB = -100 V IE = 0 BDT60B -0.2 Collector cut-off V CB = -120 V IE = 0 BDT60C -0.2 current V CB = -30 V IE = 0 TC = 150°C BDT60 -2.0 V CB = -40 V IE = 0 TC = 150°C BDT60A -2.0 V CB = -50 V IE = 0 TC = 150°C BDT60B -2.0 V CB = -60 V IE = 0 TC = 150°C BDT60C -2.0 VEB = -5 V IC = 0 VCE = -3 V IC = -1.5 A (see Notes 3 and 4) -6 mA IC = -1.5 A -3 V IC = -1.5 A breakdown voltage Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter IB = VCE = voltage Parallel diode IE = forward voltage -1.5 A (see Note 3) TYP UNIT -60 V mA mA -5 mA (see Notes 3 and 4) -2.5 V (see Notes 3 and 4) -2.5 V -2.0 V 750 IB = 0 NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 2.5 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † † MIN ton Turn-on time IC = -2 A IB(on) = -8 mA IB(off) = 8 mA toff Turn-off time V BE(off) = 5 V RL = 20 Ω tp = 20 µs, dc ≤ 2% Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT 2 TEST CONDITIONS INFORMATION TYP 1 µs 4.5 µs BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS AUGUST 1993 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS115AD 20000 TC = -40°C TC = 25°C TC = 100°C 10000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 1000 VCE = -3 V tp = 300 µs, duty cycle < 2% 100 -0·5 -1·0 -5·0 TCS115AB -2·0 tp = 300 µs, duty cycle < 2% IB = IC / 100 -1·5 -1·0 -0·5 TC = -40°C TC = 25°C TC = 100°C 0 -0·5 IC - Collector Current - A -1·0 -5·0 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS115AC VBE(sat) - Base-Emitter Saturation Voltage - V -3·0 -2·5 TC = -40°C TC = 25°C TC = 100°C -2·0 -1·5 -1·0 IB = IC / 100 t p = 300 µs, duty cycle < 2% -0·5 -0·5 -1·0 -5·0 IC - Collector Current - A Figure 3. PRODUCT INFORMATION 3 BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS AUGUST 1993 - REVISED MARCH 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A -10 SAS115AB -1·0 -0·1 BDT60 BDT60A BDT60B BDT60C -0.01 -1·0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS110AA Ptot - Maximum Power Dissipation - W 60 50 40 30 20 10 0 0 25 50 75 100 TC - Case Temperature - °C Figure 5. PRODUCT 4 INFORMATION 125 150 BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS AUGUST 1993 - REVISED MARCH 1997 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 5,28 4,88 VERSION 1 0,64 0,41 2,90 2,40 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. PRODUCT MDXXBE INFORMATION 5 BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS AUGUST 1993 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited PRODUCT 6 INFORMATION