KEC BC546 Epitaxial planar npn transistor Datasheet

SEMICONDUCTOR
BC546/7/8
TECHNICAL DATA
EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
B
C
A
FEATURES
·High Voltage : BC546 VCEO=65V.
·For Complementary With PNP Type BC556/557/558.
N
E
K
G
J
D
MAXIMUM RATING (Ta=25℃)
SYMBOL
RATING
H
UNIT
F
F
Voltage
BC547
VCBO
50
BC548
30
BC546
65
V
1
2
C
Collector-Base
80
L
BC546
3
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_ 0.50
14.00 +
0.55 MAX
2.30
0.45 MAX
1.00
M
CHARACTERISTIC
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
1. COLLECTOR
2. BASE
Collector-Emitter
Voltage
Emitter-Base
Voltage
Collector Current
Base Current
Emitter Current
BC547
VCEO
45
BC548
30
BC546
6
BC547
VEBO
6
BC548
5
BC546
100
BC547
IC
100
BC548
100
BC546
20
BC547
IB
20
BC548
20
BC546
-100
BC547
IE
BC548
-100
3. EMITTER
V
TO-92
V
mA
mA
mA
-100
Collector Power Dissipation
PC
625
mW
Junction Temperature
Tj
150
℃
Tstg
-55~150
℃
Storage Temperature Range
2008. 4. 16
Revision No : 4
1/3
BC546/7/8
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
ICBO
Collector Cut-off Current
TEST CONDITION
VCB=30V, IE=0
BC546
DC Current Gain (Note)
BC547
hFE
VCE=5V, IC=2mA
BC548
MIN.
TYP.
MAX.
UNIT
-
-
15
nA
110
-
450
110
-
800
110
-
800
Collector-Emitter Saturation Voltage
VCE(sat)
IC=100mA, IB=5mA
-
-
0.6
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=100mA, IB=5mA
-
0.9
1.1
V
VBE(ON)1
VCE=5V, IC=2mA
0.58
-
0.7
V
VBE(ON)2
VCE=5V, IC=10mA
-
-
0.75
V
VCE=5V, IC=10mA, f=100MHz
-
150
-
MHz
VCB=10V, f=1MHz, IE=0
-
-
4.5
pF
-
1.0
10
dB
Base-Emitter Voltage
fT
Transition Frequency
Collector Output Capacitance
Cob
Noise Figure
NF
VCE=6V, IC=0.1mA
Rg=10kΩ, f=1kHz
NOTE : According to the value of hFE the BC546, BC547, BC548 are classified as follows.
CLASSIFICATION
hFE
2008. 4. 16
none
A
B
C
BC546
110~450
110~220
200~450
-
BC547
110~800
110~220
200~450
420~800
BC548
110~800
110~220
200~450
420~800
Revision No : 4
2/3
BC546/7/8
2008. 4. 16
Revision No : 4
3/3
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