SEMICONDUCTOR BC546/7/8 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C A FEATURES ·High Voltage : BC546 VCEO=65V. ·For Complementary With PNP Type BC556/557/558. N E K G J D MAXIMUM RATING (Ta=25℃) SYMBOL RATING H UNIT F F Voltage BC547 VCBO 50 BC548 30 BC546 65 V 1 2 C Collector-Base 80 L BC546 3 MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M CHARACTERISTIC DIM A B C D E F G H J K L M N 1. COLLECTOR 2. BASE Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Emitter Current BC547 VCEO 45 BC548 30 BC546 6 BC547 VEBO 6 BC548 5 BC546 100 BC547 IC 100 BC548 100 BC546 20 BC547 IB 20 BC548 20 BC546 -100 BC547 IE BC548 -100 3. EMITTER V TO-92 V mA mA mA -100 Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ Storage Temperature Range 2008. 4. 16 Revision No : 4 1/3 BC546/7/8 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL ICBO Collector Cut-off Current TEST CONDITION VCB=30V, IE=0 BC546 DC Current Gain (Note) BC547 hFE VCE=5V, IC=2mA BC548 MIN. TYP. MAX. UNIT - - 15 nA 110 - 450 110 - 800 110 - 800 Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=5mA - - 0.6 V Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=5mA - 0.9 1.1 V VBE(ON)1 VCE=5V, IC=2mA 0.58 - 0.7 V VBE(ON)2 VCE=5V, IC=10mA - - 0.75 V VCE=5V, IC=10mA, f=100MHz - 150 - MHz VCB=10V, f=1MHz, IE=0 - - 4.5 pF - 1.0 10 dB Base-Emitter Voltage fT Transition Frequency Collector Output Capacitance Cob Noise Figure NF VCE=6V, IC=0.1mA Rg=10kΩ, f=1kHz NOTE : According to the value of hFE the BC546, BC547, BC548 are classified as follows. CLASSIFICATION hFE 2008. 4. 16 none A B C BC546 110～450 110～220 200～450 - BC547 110～800 110～220 200～450 420～800 BC548 110～800 110～220 200～450 420～800 Revision No : 4 2/3 BC546/7/8 2008. 4. 16 Revision No : 4 3/3