AOD510/AOI510 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial VDS ID (at VGS=10V) 30V 70A RDS(ON) (at VGS=10V) < 2.6mΩ RDS(ON) (at VGS=4.5V) < 4mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK TopView Top View Bottom View TO-251A IPAK D Bottom View D D S D D G G S S G G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Units V ±20 V 54 A 45 IDSM TA=70°C Maximum 30 280 IDM TA=25°C Continuous Drain Current S D 70 ID TC=100°C G A 37 IAS 45 A Avalanche energy L=0.1mH C EAS 101 mJ VDS Spike VSPIKE 36 V Power Dissipation B 100ns TC=25°C PD TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 0: Feb. 2012 7.5 Steady-State Steady-State RθJA RθJC W 5.2 TJ, TSTG Symbol t ≤ 10s W 30 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 60 -55 to 175 Typ 16 41 1.9 www.aosmd.com °C Max 20 50 2.5 Units °C/W °C/W °C/W Page 1 of 6 AOD510/AOI510 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd tD(on) 1.7 ±100 nA 2.2 V 2.1 2.6 2.7 3.3 3.2 4 85 0.7 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A 0.9 mΩ mΩ S 1 V 70 A 2719 VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge µA 5 1.2 Units V 1 TJ=55°C VDS=5V, ID=20A Max 30 VDS=30V, VGS=0V IDSS Coss Typ pF 1204 pF 169 pF 2 3 Ω 44 60 nC 21 28 nC 9 nC Gate Drain Charge 7 nC Turn-On DelayTime 9.7 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 5.2 ns 32.5 ns tf Turn-Off Fall Time 10.3 ns trr Body Diode Reverse Recovery Time Qrr IF=20A, dI/dt=500A/µs 19.6 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 42.7 ns nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Feb. 2012 www.aosmd.com Page 2 of 6 AOD510/AOI510 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 100 10V 4V VDS=5V 3.5V 100 80 4.5V 80 ID(A) ID (A) 60 60 40 40 20 VGS=3V 20 125°C 0 0 0 1 2 3 4 0 5 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 6 Normalized On-Resistance 1.6 5 RDS(ON) (mΩ Ω) 25°C 4 VGS=4.5V 3 2 VGS=10V 1 0 VGS=10V ID=20A 1.4 17 5 VGS=4.5V 2 ID=20A 10 1.2 1 0.8 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 6 1.0E+02 ID=20A 5 1.0E+01 4 1.0E+00 125°C IS (A) RDS(ON) (mΩ Ω) 40 3 125°C 1.0E-01 1.0E-02 2 1.0E-03 1 25°C 25°C 1.0E-04 0 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Feb. 2012 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOD510/AOI510 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 4000 VDS=15V ID=20A 3500 8 Ciss Capacitance (pF) VGS (Volts) 3000 6 4 2500 2000 Coss 1500 1000 2 500 Crss 0 0 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 50 0 RDS(ON) limited 10µs 30 100µs 10.0 1.0 1ms 10ms TJ(Max)=175°C TC=25°C DC 0.1 TJ(Max)=175°C TC=25°C 160 10µs Power (W) ID (Amps) 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 200 1000.0 100.0 5 120 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=2.5°C/W 1 PD Single Pulse 0.1 Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Feb. 2012 www.aosmd.com Page 4 of 6 AOD510/AOI510 80 100 60 80 Current rating ID(A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 20 60 40 20 0 0 0 25 50 75 100 125 150 TCASE (° °C) Figure 12: Power De-rating (Note F) 175 0 25 50 75 100 125 150 TCASE (° °C) Figure 13: Current De-rating (Note F) 175 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=50°C/W 0.1 Single Pulse PD 0.01 Ton T 0.001 1E-05 Rev 0: Feb. 2012 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) www.aosmd.com 100 1000 Page 5 of 6 AOD510/AOI510 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0: Feb. 2012 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6