SFF9140J Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com -18 AMPS -100 VOLTS 0.20 Ω P-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: • • • • • • • • • • Rugged Construction with Poly Silicon Gate Low RDS(on) and High Transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dv/dt Performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Hermetically Sealed Replaces: IRF9140 Types TX, TXV, and Space Level Screening Available. Consult Factory. TO-257 MAXIMUM RATINGS Symbol Value Units VDS -100 Volts VGS ±20 Volts ID -18 -11 Amps TOP & Tstg -55 to +150 RθJC 2.0 PD 63 48 Watts Single Pulse Avalanche Energy EAS 500 mJ Repetitive Avalanche Energy EAR 12.5 mJ Drain to Source Voltage Gate to Source Voltage o Continuous Drain Current TC = 25 C TC = 100oC Operating and Storage Temperature Thermal Resistance, Junction to Case o Total Device Dissipation TC = 25 C TC = 55oC o C o C/W PACKAGE OUTLINE: TO-257 (J) PINOUT: PIN 1: DRAIN PIN 2: SOURCE PIN 3: GATE SUFFIX JDB NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FP0015G SUFFIX JUB DOC SFF9140J Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com ELECTRICAL CHARACTERISTICS Symbol Min Typ Max Unit Drain to Source Breakdown Voltage (VGS = 0 V, ID = 1 mA) ∆BVDSS -100 –– –– Volts Temperature Coefficient of Breakdown Voltage ∆BVDSS TJ –– 0.087 –– Volts RDS(on) –– –– 0.15 –– 0.20 0.23 Ω VGS(th) -2.0 –– -4.0 Volts gfs 6.1 8.0 –– S mho Zero Gate Voltage Drain Current (VDS = 80% rated VDS, VGS = 0 V) o (VDS = 80% rated VDS, VGS = 0 V, TA = 125 C) IDSS –– –– –– –– 25 250 µA Gate to Source Leakage Forward Gate to Source Leakage Reverse At rated VGS IgSS –– –– –– –– -100 100 nA Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS = -10 Volts 50% rated VDS ID = -18 A) Qg Qgs Qgd 31 –– 7 50 3 25 70 15 45 nC Turn ON Delay Time Rise Time Turn OFF Delay Time Fall TIme (VDD = 50% of rated VDS rated ID RG = 9.1 Ω) td(on)r tr td(off) tf –– –– –– –– 15 8 35 20 35 85 85 65 ns VSD –– –– -4.2 Volts Drain to Source ON State Resistance (VGS = -10 V) ID = 11A ID = 18A Gate Threshold Voltage (VDS = VGS, ID = 250µA) Forward Transconductance (VDS > 10V, IDS = 11A) Diode Forward Voltage (IS = rated ID, VGS = 0 V, TJ = 25°C) o Diode Reverse Recovery Time Reverse Recovery Charge TJ = 25 C IF = rated ID di/dt = 100 A/µsec trr QRR –– –– 170 –– 280 3.6 ns µC Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 Volts VDS = -25 Volts f = 1 MHz Ciss Coss Crss –– –– –– 1400 600 200 1650 740 260 ns