Production specification Dual Hot-Carrier Diodes MMBD452 FEATURES Pb z Very low capacitance. z Extremely low minority carrier lifetime. Lead-free z Low reverse leakage. z Power dissipation Pd=225mW. APPLICATIONS z Designed primarily for UHF and VHF detector SOT-23 applications. ORDERING INFORMATION Type No. Marking MMBD452 5N Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit Continuous reverse voltage VR 30 V Power Dissipation Pd 225 mW Operating junction temperature range TJ -55 to +125 ℃ Junction and storage temperature TSTG -55 to +150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Min. Reverse Breakdown Voltage V(BR) 30 Forward voltage VF 0.38 0.52 Reverse current IR Total Capacitanc CT C139 Rev.A Typ. Max. Unit Conditions V IR=10μA 0.45 0.6 V IF=1.0mA IF=10mA 13 200 nA VR=25V 0.9 1.5 pF VR=15V,f=1MHz www.gmicroelec.com 1 Production specification Dual Hot-Carrier Diodes MMBD452 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified C139 Rev.A www.gmicroelec.com 2 Production specification Dual Hot-Carrier Diodes MMBD452 PACKAGE OUTLINE Plastic surface mounted package SOT-23 SOT-23 A E K B J D G Dim Min Max A 2.70 3.10 B 1.10 1.50 C 1.0 Typical D 0.4 Typical E 0.35 0.48 G 1.80 2.00 H 0.02 0.1 J H C K 0.1 Typical 2.20 2.60 All Dimensions in mm SOLDERING FOOTPRINT 0.95 0.95 2.00 0.90 0.80 Unit : mm PACKAGE INFORMATION Device Package Shipping MMBD452 SOT-23 3000/Tape&Reel C139 Rev.A www.gmicroelec.com 3