DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Applications ► ► ► ► ► ► ► Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Normally-on switches Solid state relays Converters Linear amplifiers Constant current sources Power supply circuits Telecom Absolute Maximum Ratings Package Options Parameter Value Drain-to-source voltage BVDSX Drain-to-gate voltage BVDGX Gate-to-source voltage ±20V Operating and storage temperature -55OC to +150OC D 300OC Soldering temperature* S G D Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. TO-92 TO-243AA (top view) Ordering Information RDS(ON) (max) (min) 450V 20Ω 200mA Package Options IDSS -G indicates package is RoHS compliant (‘Green’) D (front view) *Distance of 1.6mm from case for 10 seconds. BVDSX/ BVDGX G TO-92 TO-243AA (SOT-89) DN3545N3 DN3545N8 DN3545N3-G DN3545N8-G S DN3545 Thermal Characteristics Package ID (continuous)1 ID (pulsed) Power Dissipation @TA = 25OC T0-92 136mA 550mA 0.74W TO-243AA 200mA 550mA 1.6W2 θjc C/W θja C/W IDR1 IDRM 125 170 136mA 550mA 15 782 200mA 550mA O O Notes: 1. ID (continuous) is limited by max rated Tj. 2. Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Electrical Characteristics (@25 C unless otherwise specified) O Parameter Min Typ Max Units BVDSX Drain-to-source breakdown voltage 450 - - V VGS = -5V, ID = 100µA VGS(OFF) Gate-to-source OFF voltage -1.5 - -3.5 V VDS = 25V, ID= 10µA Change in VGS(OFF) with temperature - - 4.5 Gate body leakage current - - 100 nA VGS = ± 20V, VDS = 0V - - 1.0 µA VGS = -5V, VDS = Max Rating - - 1.0 mA VGS = -5V, VDS = 0.8 Max Rating TA = 125°C 200 - - mA VGS = 0V, VDS = 15V Static drain-to-source on-state resistance - - 20 Ω VGS = 0V, ID = 150mA Change in RDS(ON) with temperature - - 1.1 %/OC VGS = 0V, ID = 150mA 150 - - m ΔVGS(OFF) IGSS ID(OFF) Drain-to-source leakage current IDSS Saturated drain-to-source current RDS(ON) ΔRDS(ON) Conditions mV/OC VDS = 25V, ID= 10µA Ω Symbol GFS Forward transductance CISS Input capacitance - - 360 COSS Common source output capacitance - - 40 CRSS Reverse transfer capacitance - - 15 td(ON) Turn-ON delay time - - 20 Rise time - - 30 Turn-OFF delay time - - 30 Fall time - - 40 Diode forward voltage drop - - 1.8 V VGS = -5V, ISD = 150mA Reverse recovery time - 800 - ns VGS = -5V, ISD = 150mA tr td(OFF) tf VSD trr pF ns 90% PULSE GENERATOR INPUT 10% td(ON) td(OFF) RGEN = 25Ω,VGS = 0V to -10V OUTPUT Rgen t(OFF) tr VDD = 25V, ID = 150mA, RL 0V t(ON) VGS = -5V, VDS = 25V, f = 1MHz VDD Switching Waveforms and Test Circuit -10V ID = 100mA, VDS = 10V tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 2 DN3545 Typical Performance Curves Output Characteristics 0.7 Saturation Characteristics 0.6 VGS = +2.0V 1.0V 0V 0.6 VGS = +2V +1.0V 0V 0.5 ID (Amperes) ID (Amperes) -0.5V 0.5 -0.5V 0.4 -0.8V 0.3 0.4 -0.8V 0.3 -1.0V 0.2 -1.0V 0.2 0.1 0.1 -1.5V -1.5V 0 0 0 50 100 150 200 250 300 350 400 450 0 2 4 6 8 10 VDS (Volts) VDS (Volts) Transconductance vs. Drain Current Power Dissipation vs. Ambient Temperature 2.0 0.8 VDS = 10V 0.6 TO-243AA 1.5 TA = 25oC PD (watts) GFS (siemens) TA = -55oC 0.4 1.0 TO-92 TA = 125oC 0.5 0.2 0 0 0 0.1 0.2 0.3 0 0.4 25 50 Maximum Rated Safe Operating Area 100 125 150 Thermal Response Characteristics 1.0 1.0 Thermal Resistance (normalized) TO-243AA (Pulsed) TO-92 (Pulsed) TO-243AA (DC) ID (Amperes) 75 TA (oC) ID (Amperes) 0.1 TO-92 (DC) 0.01 T A =25 oC 0.001 1 TO-243AA TA = 25 oC PD = 1.6W 0.8 0.6 0.4 0.2 TO-92 TC = 25 oC PD = 1.0W 0 10 100 1000 0.001 VDS (Volts) 0.01 0.1 tp (seconds) 3 1 10 DN3545 Typical Performance Curves (cont.) On Resistance vs. Drain Current BVDSS Variation with Temperature 50 ID = 100µA VGS = -5V 40 1.1 RDS(ON) (ohms) BVDSS (Normalized) 1.2 1.0 30 20 0.9 VGS = 0V 10 0.8 -50 0 0 50 100 150 0 0.2 0.4 0.6 0.8 TJ (oC) ID (Amperes) Transfer Characteristics VGS(OFF) and RDS(ON) w/ Temperature 1.0 1.5 2.4 1.3 2.0 VDS = 10V ID (Amperes) 0.6 TA = 25oC 0.4 TA = 125oC 1.1 0.9 1.2 0.7 0.2 1.6 VGS(OFF) @ 10µA 0.8 RDS(ON) @ 0V, 150mA 0.5 0 -3 -2 -1 0 1 0.4 -50 2 0 50 100 150 VGS (Volts) TJ (oC) Capacitance vs. Drain Source Voltage Gate Drive Dynamic Characteristics 3 300 VGS = -5V ID = 150mA 2 250 VDS = 30V VGS (volts) C (picofarads) 1 200 150 CISS 0 -1 -2 100 -3 50 COSS CRSS -4 0 -5 0 10 20 30 40 0 1 2 3 4 QG (Nanocoulombs) VDS (Volts) 4 5 6 RDS(ON) (normalized) VGS(OFF) (normalized) TA = -55oC 0.8 DN3545 3-Lead TO-92 Surface Mount Package (N3) 0.135 MIN 0.125 - 0.165 0.080 - 0.105 1 2 3 Top View 0.175 - 0.205 0.170 - 0.210 Seating Plane 1 2 3 0.500 MIN 0.014 - 0.022 0.014 - 0.022 0.045 - 0.055 0.095 - 0.105 Side View Front View Notes: All dimensions are in millimeters; all angles in degrees. 5 DN3545 3-Lead TO-243AA (SOT-89) Surface Mount Package (N8) 4.50 ± 0.10 1.72 ± 0.10 1.50 ± 0.10 0.40 ± 0.05 Exclusion Zone No Vias/Traces in this area. Shape of pad may vary. 4.10 ± 0.15 2.21 ± 0.08 2.45 ± 0.15 1.05 ± 0.15 0.5 ± 0.06 0.42 ± 0.06 1.50 BSC 3.00 BSC Top View Side View Bottom View Notes: All dimensions are in millimeters; all angles in degrees. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-DN3545 A012207 6