Pan Jit IMZ2A Complementary dual general purpose amplifier transi Datasheet

IMZ2A
COMPLEMENTARY DUAL GENERAL PURPOSE AMPLIFIER TRANSIS
VOLTAGE
50 Volts
POWER
300mW
FEATURES
• PNP/ NPN epitaxial silicon, planar design
• Collector-emitter voltage VCE=50V
• Collector current IC=150mA
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case : SOT23-6L plastic
Terminals : Solderable per MIL-STD-750,Method 2026
Approx. Weight: 0.013gram
Marking : Z2A
Tr2
Tr1
Fig.137
ABSOLUTE RATINGS (TA =25°C)
PARAMETER
SYMBOL
Tr1
Tr2
UNITS
Collector-Emitter Voltage
VCEO
-50
50
V
Collector-Base Voltage
VCBO
-60
60
V
Emitter-Base Voltage
VEBO
-6
7
V
IC
-150
150
mA
Collector Current Continuous
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNITS
Max. Power Dissipation (Note1)
PTOT
300
mW
Thermal Resistance, Junction to Ambient (Note1)
RΘJA
106
TJ,TSTG
-55 to +150
Operating Junction and Storage Temperature Range
O
C/W
O
C
NOTE:
1. Transistor mounted on FR-4 board 70 x 60 x 1 mm.
REV.0.1-MAR.10.2009
PAGE . 1
IMZ2A
ELECTRICAL CHARACTERISTICS (TA =25°C)
Tr1 (PNP)
PARAMETER
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
Collector-Emitter Breakdown Voltage
V(BR)CEO
I C=-1mA
-50
-
-
V
Collector-Base Breakdown Voltage
V(BR)CBO
I C=-50µA
-60
-
-
V
Emitter-Base Breakdown Voltage
V(BR)EBO
I E=-50µA
-6
-
-
V
Collector-Base Cutoff Current
I CBO
VCB=-60V
-
-
-0.1
µA
Collector-Emitter Cutoff Current
I EBO
VEB=-6V
-
-
-0.1
µA
DC Current Gain (Note1)
hFE
VCE=-6V, I C=-1mA
120
-
560
-
VCE(sat)
I C/I B=-50mA/-5mA
-
-
-0.5
V
fT
I E=2mA,VCE=-12V,
f=100MHz
-
140
-
MHz
C ob
I E=0mA,VCE=-12V,
f=100MHz
-
4
5
pF
MIN
TYP
MAX
UNITS
Collector-Emitter Saturation Voltage
Cutoff Frequency
Output Capacitance
Tr2 (NPN)
PARAMETER
SYMBOL
TEST CONDITION
Collector-Emitter Breakdown Voltage
V(BR)CEO
I C=1mA
50
-
-
V
Collector-Base Breakdown Voltage
V(BR)CBO
I C=50µA
60
-
-
V
Emitter-Base Breakdown Voltage
V(BR)EBO
I E=50µA
7
-
-
V
Collector-Base Cutoff Current
I CBO
VCB=60V
-
-
0.1
µA
Collector-Emitter Cutoff Current
I EBO
VEB=7V
-
-
0.1
µA
DC Current Gain (Note1)
hFE
VCE=6V, I C=1mA
120
-
560
-
VCE(sat)
I C/I B=50mA/5mA
-
-
0.4
V
fT
I E=2mA,VCE=12V,
f=100MHz
-
180
-
MHz
C ob
I E=0mA,VCE=12V,
f=100MHz
-
2
3.5
pF
Collector-Emitter Saturation Voltage
Cutoff Frequency
Output Capacitance
REV.0.1-MAR.10.2009
PAGE . 2
IMZ2A
Fig. 1. Collector Saturation Region
Fig. 2. DC Current Gain
`
Fig. 3. VCE(sat) versus IC
Fig. 4. VBE(sat) versus IC
Fig. 5. Base-Emitter Voltage
REV.0.1-MAR.10.2009
PAGE . 3
IMZ2A
Fig. 1. Collector Saturation Region
Fig. 2. DC Current Gain
`
Fig. 3. VCE(sat) versus IC
Fig. 4. VBE(sat) versus IC
Fig. 5. Base-Emitter Voltage
REV.0.1-MAR.10.2009
PAGE . 4
IMZ2A
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 10K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
REV.0.1-MAR.10.2009
PAGE . 5
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