HF150-50S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 4L STUD (A) The ASI HF150-50S is Designed for .112 x 45° FEATURES: A Ø .630 NOM C • PG = 14 dB min. at 150 W/30 MHz • IMD3 = 100 dBc max. at 150 W (PEP) • Omnigold™ Metalization System B C E E B D E G MAXIMUM RATINGS 1/4-28 UNF-2A F H IC 10 A VCBO 110 V VEBO 4.0 V DIM MINIMUM inches / mm inches / mm 55 V A .220 / 5.59 .230 / 5.84 VCEO PDISS 233 W @ TC = 25 C TJ -65 OC to +200 OC T STG -65 OC to +150 OC θ JC 0.75 OC/W CHARACTERISTICS SYMBOL 1.050 / 26.67 B O MAXIMUM C .545 / 13.84 .555 / 14.10 D .495 / 12.57 .505 / 12.83 E .003 / 0.08 .007 / 0.18 .830 / 21.08 F G .185 / 4.70 .198 / 5.03 H .497 / 12.62 .530 / 13.46 ORDER CODE: ASI10613 TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CBO IC = 100 mA 110 V BV CES IC = 100 mA 110 V BV CEO IC = 100 mA 55 V BV EBO IE = 10 mA 4.0 V ICEO VCE = 30 V 5 mA ICES VE = 60 V 5 mA hFE VCE = 6 V 43.5 --- Cob VCB = 50 V 220 pF -30 dB dBc % GP IMD3 ηC IC = 1.4 A 18 f = 1.0 MHz 14 VCE = 50 V ICQ =100 mA POUT = 150 W(PEP) 37 A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.