MCC MMBD1504 High conductance low leakage diode 350mw Datasheet

MCC
MMBD1501(A)
THRU
MMBD1505(A)
omponents
21201 Itasca Street Chatsworth
!"#
$ % !"#
Features
High Conductance
l
Low Leakage
l
Surface Mount Package Ideally Suited for Automatic Insertion
Low Leakage Diode
o
l
150 C Junction Temperature
l
High Conductance
350mW
Mechanical Data
SOT-23
l Case: SOT-23, Molded Plastic
l Terminals: Solderable per MIL-STD-202, Method 208
A
D
l Polarity: See Diagram
l Weight: 0.008 grams ( approx.)
C
B
Maximum Ratings @ 25oC Unless Otherwise Specified
Characteristic
Symbol
Value
Working Inverse Voltage
V IV
180
V
DC Forward Current
IF
600
mA
Average Rectified Current
Io
200
mA
Recurrent Peak Forward Current
if
700
mA
if(surge)
1.0
2.0
A
Pd
350
mW
Peak Forward Surge Current @ t=1.0s
@t=1.0ms
Power Dissipation
Thermal Resistance
R
357
Operation & Storage Temp. Range
Tj, TSTG
-55 to +150
o
C/W
o
C
Note: 1) These ratings are based on a max. junction temperature of 150 degrees C
2) These are steady state limits. T he factory should be consulted on applications
involving pulsed or low duty cycle operation
Electrical Characteristics @ 25oC Unless Otherwise Specified
Charateristic
Symbol
Min
Breakdown Voltage
BV
200
VF
620
720
800
0.83
0.87
0.9
750
850
950
1.1
1.3
1.5
-----
Forward Voltage Drop
Reverse Current
Junction Capacitance
IR
Cj
-----
Max
F
Unit
Unit
Test Cond.
V
mV
mV
mV
V
V
V
IR=5.0uA
I F=1.0mA
IF =10mA
IF =50mA
IF =100mA
IF =200mA
IF =300mA
1.0
3.0
10
5.0
nA
uA
nA
uA
V R=125V
o
VR =125V T A =150 C
V R=180V
o
V R =180V T A =150 C
4
pF
V R =0V, f=1.0MHz
E
H
G
J
K
DIMENSIONS
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
.037
.950
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.037
.950
inches
mm
MCC
MMBD1501(A) thru MMBD1505(A)
325
Ta= 25°C
300
275
250
3
5
10
20
30
50
I R - REVERSE CURRENT (uA)
400
1
2
Ta= 25°C
2
1
0
130
3
5
10
20 30
50
IF - FORWARD CURRENT (uA)
100
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 0.1 to 10 mA
800
700
650
600
550
500
0.1
4
CAPACITANCE (pF)
1.1
1
0.9
0.8
20
0.2 0.3 0.5
1
2
3
5
I F - FORWARD CURRENT (mA)
30
50
100
200 300
3
2.5
2
1.5
1
500
Ta= 25°C
3.5
0
IFIF - FORWARD CURRENT (mA)
I - CURRENT (mA)
500
IR
400
300
CU
RR
EN
T
ST
EA
D
Y
Io - A
ST
VER
AT
AGE
E
REC
-m
TIFIE
D CU
A
RRE
NT mA
200
100
0
-F
OR
WA
RD
50
100
150
TA - AMBIENT TEMPERATURE ( o C)
4
6
8
10
REVERSE VOLTAGE (V)
12
14 15
POWER DERATING CURVE
400
DO-35 Pkg
300
SOT-23 Pkg
200
100
0
0
2
500
PD - POWER DISSIPATION (mW)
Average Rectified Current (Io) &
Forward Current (I F) versus
Ambient Temperature (TA)
10
CAPACITANCE vs REVERSE VOLTAGE
VR - 0 to 15 V
Ta= 25°C
10
Ta= 25°C
750
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 10 to 800 mA
1.2
205
150
170
190
VR - REVERSE VOLTAGE (V)
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
VVFF - FORWARD VOLTAGE (mV)
450
VF - FORWARD VOLTAGE (V)
VVFF - FORWARD VOLTAGE (mV)
Ta= 25°C
500
350
3
100
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 1 to 100 uA
550
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 130 - 205 Volts
IR - REVERSE CURRENT (nA)
VR - REVERSE VOLTAGE (V)
REVERSE VOLTAGE vs REVERSE CURRENT
BV - 3.0 to 100 uA
0
50
100
150
IO - AVERAGE TEMPERATURE ( oC)
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200
MCC
MMBD1501(A) thru MMBD1505(A)
CONNECTION DIAGRAMS
3
11
1
MMBD1501
MMBD1503
MMBD1504
MMBD1505
3
1501
3
2 NC
1
1
2
3
3
1504
1503
1505
2
MARKING
11 MMBD1501A
13 MMBD1503A
14 MMBD1504A
15 MMBD1505A
1
2
1
2
A11
A13
A14
A15
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