CHENMKO ENTERPRISE CO.,LTD CHDTB114TKPT SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 500 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SC-59/SOT-346 * Small surface mounting type. (SC-70/SOT-323) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Internal isolated PNP transistors in one package. Built in bias resistor(R1=10kΩ, Typ. ) (2) 0.95 (3) 1.7~2.1 2.7~3.1 0.95 (1) CONSTRUCTION 0.3~0.51 * One PNP transistors and bias of thin-film resistors in one package. 1.2~1.9 MARKING TK0 0.89~1.3 0.085~0.2 E CIRCUIT 0~0.1 0.3~0.6 B 2 1 2.1~2.95 TR R1 3 SC-59/SOT-346 Dimensions in millimeters C LIMITING VALUES In accordance with the Absolute Maximum Rating System . SYMBOL PARAMETER VALUE CONDITIONS UNIT VCBO Coll ector -Base voltage -50 V VCEO Collector-Emitter voltage -40 V VEBO Emitter-Base voltage -5 V IC Coll ector current -500 mA PC Collector Power dissipation 200 mW TSTG Storage temperature −55 ∼ +150 O TJ Junction temperature −55 ∼ +150 O C 140 O C/W RθJ-S Thermal resistance , Note 1 Tamb ≤ 25 OC, Note 1 junction - soldering point C Note 1. Transistor mounted on an FR4 printed-circuit board. 2003-12 RATING CHARACTERISTIC ( CHDTB114TKPT ) CHARA CTERISTICS Tamb = 25 °C unless otherwise speciÞed. SY MBOL PARAMETER CONDITIONS MIN. MAX. UNIT -50.0 − − V -40.0 − − V − V BVCBO Collector-Base breakdown voltage BVCEO Collector-Emitter breakdown voltage IC= -1mA BVEBO Emitter-Base breakdown voltage IE= -50uA -5.0 − IC= -50uA TY P . − VCE(sat) Collector-Emitter Saturation voltage IC= -50mA; IB= -2.5mA − -0.3 V ICBO Collector-Base current VCB= -50V − − -0.5 uA IEBO Emitter-Base current VEB= -4V − − -0.5 uA hFE DC current gain IC= -50mA; VCE= -5.0V 100 250 600 R1 fT Input resistor Transition frequency 7 − 10 250 13 − Not e 1.Pulse test: tp≤300uS; δ ≤0.02. IE=5mA, VCE= -10.0V f=100MHz = KΩ MHz