isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUP22A DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 350V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switchingregulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage VBE=0 650 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 20 A IB Base Current-Continuous 4 A IBM Base Current-Peak 6 A PC Collector Power Dissipation @ TC=25℃ 125 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.0 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUP22A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ;IB= 0; L=25 mH 350 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.67A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 0.67A 1.5 V ICES Collector Cutoff Current VCE= VCESmax;VBE= 0 VCE= VCESmax;VBE= 0; TJ= 125℃ 1 2 mA IEBO Emitter Cutoff Current VEB= 9V; IC=0 10 mA hFE DC Current Gain IC= 1A; VCE= 5V B TYP. MAX UNIT V B B 25 Switching Times; Resistive Load ton Turn-On Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 6A; IB1= -IB2= 0.67A 2 0.5 μs 3.0 μs 0.3 μs