NL27WZU04 Dual Unbuffered Inverter The NL27WZU04 is a high performance dual unbuffered inverter operating from a 1.65 to 5.5 V supply. These devices are well suited for use as oscillators, pulse shapers, and in many other applications requiring a high−input impedance amplifier. For digital applications, the NL27WZ04 is recommended. http://onsemi.com Features • • • Designed for 1.65 V to 5.5 V VCC Operation Unbuffered for Crystal Oscillator and Analog Applications LVCMOS Compatible Source/Sink ±16 mA @ 4.5 V VCC Near Zero Static Supply Current Substantially Reduces System Power Requirements Chip Complexity: FET = 72; Equivalent Gate = 18 These Devices are Pb−Free and are RoHS Compliant NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable IN A1 1 6 OUT Y1 GND 2 5 VCC MARKING DIAGRAMS 6 M • • • • • SC−88/SOT−363/SC−70 DF SUFFIX CASE 419B M6 M G G 1 6 TSOP−6 DT SUFFIX CASE 318G M6 M G M6 M G G 1 = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. IN A2 3 OUT Y2 4 PIN ASSIGNMENT Figure 1. Pinout (Top View) IN A1 1 OUT Y1 IN A2 1 OUT Y2 Figure 2. Logic Symbol Pin Function 1 IN A1 2 GND 3 IN A2 4 OUT Y2 5 VCC 6 OUT Y1 FUNCTION TABLE A Input Y Output L H H L ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2012 June, 2012 − Rev. 9 1 Publication Order Number: NL27WZU04/D NL27WZU04 MAXIMUM RATINGS Symbol VCC Characteristics Value Units −0.5 to +7.0 V −0.5 ≤ VI ≤ VCC V −0.5 to +7.0 V DC Supply Voltage VI DC Input Voltage VO DC Output Voltage IIK DC Input Diode Current VI < GND −50 IOK DC Output Diode Current VO < GND VO > VCC −50 +50 IO DC Output Sink Current ±50 mA ICC DC Supply Current per Supply Pin ±100 mA IGND DC Ground Current per Ground Pin ±100 mA TSTG Storage Temperature Range −65 to +150 °C PD Power Dissipation in Still Air SC−88, TSOP−6 200 qJA Thermal Resistance SC−88, TSOP−6 333 TL Lead Temperature, 1 mm from Case for 10 s 260 °C TJ Junction Temperature under Bias +150 °C VESD ESD Withstand Voltage Human Body Model (Note 1) Machine Model (Note 2) Charged Device Model (Note 3) > 2000 > 200 N/A ILatchup Latchup Performance Above VCC and Below GND at 85°C (Note 4) mA mA mW °C/W V mA ±500 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Tested to EIA/JESD22−A114−A. 2. Tested to EIA/JESD22−A115−A. 3. Tested to JESD22−C101−A. 4. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol VCC Parameter Supply Voltage Operating Data Retention Only Min Max 1.65 1.5 5.5 5.5 Units V VI Input Voltage 0 5.5 V VO Output Voltage (High or LOW State) 0 5.5 V TA Operating Free−Air Temperature −55 +125 °C Dt/DV Input Transition Rise or Fall Rate VCC = 2.5 V ± 0.2 V VCC = 3.0 V ± 0.3 V VCC = 5.0 V ± 0.5 V 0 0 0 20 10 5 http://onsemi.com 2 ns/V NL27WZU04 DC ELECTRICAL CHARACTERISTICS Symbol Parameter Condition VIH High−Level Input Voltage TA = 25°C Min 1.65 to 1.85 0.85 VCC 0.85 VCC 2.3 to 5.5 0.8 VCC 0.8 VCC Typ 1.65 to 1.85 VIL Low−Level Input Voltage VOH High−Level Output Voltage VIN = VIL IOH = −100 mA VIN = GND Max IIN Min Max Units V 0.15 VCC 2.3 to 5.5 VOL −55°C 3 TA 3 125°C VCC (V) 0.15 VCC 0.2 VCC V 0.2 VCC 1.65 to 5.5 VCC−0.1 VCC−0.1 IOH = −3 mA 1.65 1.29 1.52 1.29 IOH = −4 mA 2.3 1.9 2.1 1.9 IOH = −6 mA 2.7 2.2 2.3 2.2 IOH = −8 mA 3.0 2.4 2.6 2.4 IOH = −12 mA 3.0 2.3 2.5 2.3 IOH = −16 mA 4.5 3.8 4.2 Low−Level Output Voltage VIN = VIH IOL = 100 mA 1.65 to 5.5 VIN = VCC IOL = 3 mA 1.65 IOL = 4 mA IOL = 6 mA V 3.8 0.1 0.1 0.08 0.24 0.24 2.3 0.12 0.3 0.3 2.7 0.20 0.4 0.4 IOL = 8 mA 3.0 0.24 0.4 0.4 IOL = 12 mA 3.0 0.26 0.55 0.55 IOL = 16 mA 4.5 0.31 0.55 0.55 0 to 5.5 ±0.1 ±1.0 mA 0 1 10 mA 5.5 1.0 10 mA Input Leakage Current VIN = 5.5 V or GND IOFF Power Off Leakage Current VIN = 5.5 V or VOUT = 5.5 V ICC Maximum Quiescent Supply Current VIN = 5.5 V or GND V ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ AC ELECTRICAL CHARACTERISTICS tR = tF = 2.5 ns; CL = 50 pF; RL = 500 W TA = 25°C Symbol tPLH tPHL Condition VCC (V) Min Typ Max Min Max Units RL = 1 MW, CL = 50 pF 1.8 ± 0.15 1.5 5.5 1.8 1.5 11.0 ns RL = 1 MW, CL = 15 pF 2.5 ± 0.2 1.2 3.3 5.7 1.2 6.3 RL = 1 MW, CL = 15 pF 3.3 ± 0.3 0.8 2.7 4.1 0.8 4.5 1.2 4.0 6.4 1.2 7.0 0.5 2.2 3.3 0.5 3.6 0.8 3.4 5.6 0.8 6.2 Parameter Propagation Delay Input A to Y (Figure 3 and 4) *55°C 3 TA 3 125°C RL = 500 W, CL = 50 pF RL = 1 MW, CL = 15 pF 5.0 ± 0.5 RL = 500 W, CL = 50 pF CAPACITIVE CHARACTERISTICS Symbol CIN Parameter Condition Typical Units Input Capacitance VCC = 5.5 V, VI = 0 V or VCC 7 pF COUT Output Capacitance VCC = 5.5 V, VI = 0 V or VCC 8 pF CPD Power Dissipation Capacitance (Note 5) 10 MHz, VCC = 5.5 V, VI = 0 V or VCC 25 pF 5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. http://onsemi.com 3 NL27WZU04 A or B VCC 50% GND tPLH Y tPHL 50% VCC PROPAGATION DELAYS tR = tF = 2.5 ns, 10% to 90%; f = 1 MHz; tW = 500 ns Figure 3. Switching Waveforms VCC PULSE GENERATOR DUT RT CL RL CL = 50 pF or equivalent (includes jig and probe capacitance) RL = R1 = 500 W or equivalent RT = ZOUT of pulse generator (typically 50 W) Figure 4. Test Circuit ORDERING INFORMATION Package Shipping† NL27WZU04DFT2G SC−88 / SOT−363 / SC−70 (Pb−Free) 3000 / Tape & Reel NLV27WZU04DFT2G* SC−88 / SOT−363 / SC−70 (Pb−Free) 3000 / Tape & Reel TSOP−6 (Pb−Free) 3000 / Tape & Reel Device NL27WZU04DTT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. http://onsemi.com 4 NL27WZU04 PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE W NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. D e 6 5 4 1 2 3 HE DIM A A1 A3 b C D E e L HE −E− b 6 PL 0.2 (0.008) M E M MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 A3 C A A1 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 NL27WZU04 PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE U NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D AND E1 ARE DETERMINED AT DATUM H. 5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE. D H 6 5 ÉÉ E1 1 NOTE 5 2 L2 4 GAUGE PLANE E 3 L b C DETAIL Z e 0.05 M A SEATING PLANE DIM A A1 b c D E E1 e L L2 M c A1 DETAIL Z MIN 0.90 0.01 0.25 0.10 2.90 2.50 1.30 0.85 0.20 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 2.75 3.00 1.50 1.70 0.95 1.05 0.40 0.60 0.25 BSC 10° − RECOMMENDED SOLDERING FOOTPRINT* 6X 0.60 6X 3.20 0.95 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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