APT10078BLL APT10078SLL 1000V 14A 0.780W POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg VDSS ID SLL D • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS Symbol TO-247 G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT10078 UNIT 1000 Volts Drain-Source Voltage 14 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 400 Watts Linear Derating Factor 3.2 W/°C VGSM PD TJ,TSTG 56 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 14 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 30 4 mJ 1300 STATIC ELECTRICAL CHARACTERISTICS RDS(on) IDSS IGSS VGS(th) Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 TYP MAX 1000 Volts 14 Amps (VGS = 10V, 0.5 ID[Cont.]) 0.78 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) UNIT Ohms µA ±100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 10-2001 ID(on) MIN Rev B BVDSS Characteristic / Test Conditions 050-7003 Symbol DYNAMIC CHARACTERISTICS Symbol APT10078 BLL - SLL Characteristic MIN Test Conditions TYP Ciss Input Capacitance VGS = 0V 2510 Coss Output Capacitance VDS = 25V 430 Crss Reverse Transfer Capacitance f = 1 MHz 73 Qg Total Gate Charge VGS = 10V 93 Q gs Gate-Source Charge 3 Q gd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr VDD = 0.5 VDSS 11 ID = ID[Cont.] @ 25°C 59 VGS = 15V 10 VDD = 0.5 VDSS 6 ID = ID[Cont.] @ 25°C 30 RG = 1.6W 8.6 Rise Time td(off) Turn-off Delay Time tf Fall Time MAX UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM V SD MIN Characteristic / Test Conditions TYP MAX 14 Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) 56 Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.]) 1.3 UNIT Amps Volts t rr Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/µs) 580 ns Q Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/µs) 5.6 µC dv / rr Peak Diode Recovery dt dv/ dt 5 10 V/ns MAX UNIT THERMAL CHARACTERISTICS Symbol MIN Characteristic RqJC Junction to Case RqJA Junction to Ambient TYP 0.31 °C/W 40 1 Repetitive Rating: Pulse width limited by maximum junction 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 13.26mH, R = 25W, Peak I = 14A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS £ -ID Cont. di/dt £ 700A/µs VR £ VDSS TJ £ 150°C [ ] APT Reserves the right to change, without notice, the specifications and information contained herein. temperature. 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 TO-247 Package Outline 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC Drain Drain (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) D PAK Package Outline 5.38 (.212) 6.20 (.244) 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) Revised 4/18/95 20.80 (.819) 21.46 (.845) 1.04 (.041) 1.15 (.045) 13.79 (.543) 13.99 (.551) 13.41 (.528) 13.51 (.532) Revised 8/29/97 11.51 (.453) 11.61 (.457) 3.50 (.138) 3.81 (.150) 050-7003 Rev B 10-2001 0.46 (.018) 0.56 (.022) {3 Plcs} 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 2.87 (.113) 3.12 (.123) 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 5.45 (.215) BSC {2 Plcs.} Gate Drain Source Source Drain Gate Dimensions in Millimeters (Inches) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 1.98 (.078) 2.08 (.082) 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058 3.81 (.150) 4.06 (.160) (Base of Lead) Heat Sink (Drain) and Leads are Plated