Mitsubishi M63820FP 8-unit 500ma darlington transistor-array with clamp diode Datasheet

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
ARY
M63820FP/KP
MIN
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8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION
The M63820FP/KP 8-channel sinkdriver, consists of 16 NPN
transistors connected to from eight high current gain driver
pairs.
FEATURES
● High breakdown voltage (BV CEO ≥ 50V)
● High-current driving (IC(max) = 500mA)
● With clamping diodes
● 3V micro computer series compatible input
● Wide operating temperature range (Ta = –40 to +85°C)
APPLICATION
Output for 3 voltage microcomputer series and interface with
high voltage system. Relay and small printer driver, LED, or
incandescent display digit driver.
PIN CONFIGURATION
NC
1
20
NC
IN1
2
19
O1
IN2
3
18
O2
IN3
4
17
O3
IN4
5
16
O4
IN5
6
15
O5
IN6
7
14
O6
IN7
8
13
O7
IN8
9
12
O8
GND
10
11
COM
INPUT
OUTPUT
20P2N-A(FP)
Package type 20P2E-A(KP)
COMMON
NC : No connection
CIRCUIT DIAGRAM
FUNCTION
The M63820FP/KP is transistor-array of high active level
eight units type which can do direct drive of 3 voltage microcomputer series. A resistor of 1.05kΩ is connected between
the input pin. A clamp diode for inductive load transient suppression is connected for the output pin (collector) and COM
pin (pin11). All emitters of the output transistor are connected to GND (pin10). The outputs are capable of driving
500mA and are rated for operation with output voltage up to
50V.
COM
OUTPUT
1.05K
INPUT
7.2K
3K
GND
The eight circuits share the COM and GND
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit : Ω
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
(Unless otherwise noted, Ta = –40 ~ +85°C)
Parameter
Collector-emitter voltage
Collector current
Conditions
Output, H
Current per circuit output, L
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Ta = 25°C, when mounted on board
Ratings
–0.5 ~ +50
500
–0.5 ~ +10
500
50
1.10(GP)/0.68(KP)
–40 ~ +85
–55 ~ +125
Unit
V
mA
V
mA
V
W
°C
°C
Sep. 2001
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
ARY
MIN
RELI
M63820FP/KP
on. ange.
ificati
h
l spec ct to c
a finaare subje
t
o
n
is
its
is
m
h
li
T
e:
tric
Notice parame
Som
P
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS
Symbol
VO
(Unless otherwise noted, Ta = –40 ~ +85°C)
Limits
Parameter
typ
—
max
50
Duty Cycle
FP : no more than 4%
KP : no more than 2%
0
—
400
Duty Cycle
FP : no more than 15%
KP : no more than 6%
0
—
200
2.7
—
—
10
V
0.6
V
Output voltage
Collector current (Current per
1 circuit when 8 circuits are
coming on simultaneously)
IC
VIH
VIL
0
ELECTRICAL CHARACTERISTICS
Symbol
V (BR) CEO
VCE(sat)
II
VF
IR
hFE
min
50
—
—
—
—
—
—
1000
typ
—
1.2
1.0
0.9
1.5
1.4
—
2500
Unit
max
—
1.6
1.3
1.1
2.4
2.0
100
—
V
V
mA
V
µA
—
(Unless otherwise noted, Ta = 25°C)
Parameter
Limits
Test conditions
Turn-on time
Turn-off time
toff
Limits
Test conditions
Collector-emitter breakdown voltage ICEO = 100µA
II = 500µA, IC = 350mA
Collector-emitter saturation voltage II = 350µA, IC = 200mA
II = 250µA, IC = 100mA
Input current
VI = 3V
Clamping diode forward volltage IF = 350mA
Clamping diode reverse current
VR = 50V
DC amplification factor
VCE = 2V, IC = 350mA
Symbol
ton
(Unless otherwise noted, Ta = 25°C)
Parameter
SWITCHING CHARACTERISTICS
V
mA
IC ≤ 400mA
“H” input voltage
“L” input voltage
Unit
min
0
CL = 15pF (note 1)
min
—
typ
15
max
—
—
350
—
Unit
ns
ns
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
INPUT
VO
50%
Measured device
50%
INPUT
RL
OPEN
OUTPUT
PG
OUTPUT
50Ω
CL
50%
ton
50%
toff
(1)Pulse generator (PG) characteristics : PRR=1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω
VI = 0 ~ 3V
(2)Input-output conditions : RL = 25Ω, Vo = 10V
(3)Electrostatic capacity CL includes floating capacitance
at connections and input capacitance at probes
Sep. 2001
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