PRELIMINARY MX25L51245G MX25L51245G DATASHEET P/N: PM2006 PRELIMINARY MX25L51245G Contents 1. FEATURES............................................................................................................................................................... 4 2. GENERAL DESCRIPTION...................................................................................................................................... 6 Table 1. Read performance Comparison.....................................................................................................6 3. PIN CONFIGURATIONS .......................................................................................................................................... 7 4. PIN DESCRIPTION................................................................................................................................................... 7 5. BLOCK DIAGRAM.................................................................................................................................................... 8 6. DATA PROTECTION................................................................................................................................................. 9 Table 2. Protected Area Sizes....................................................................................................................10 Table 3. 4K-bit Secured OTP Definition..................................................................................................... 11 7. Memory Organization............................................................................................................................................ 12 Table 4. Memory Organization...................................................................................................................12 8. DEVICE OPERATION............................................................................................................................................. 13 8-1. 256Mb Address Protocol........................................................................................................................... 15 8-2. Quad Peripheral Interface (QPI) Read Mode........................................................................................... 18 9. COMMAND DESCRIPTION.................................................................................................................................... 19 9-1. 9-2. 9-3. 9-4. 9-5. 9-6. 9-7. 9-8. 9-9. 9-10. 9-11. 9-12. 9-13. 9-14. 9-15. 9-16. 9-17. 9-18. 9-19. 9-20. 9-21. 9-22. 9-23. 9-24. P/N: PM2006 Table 5. Command Set...............................................................................................................................19 Write Enable (WREN)............................................................................................................................... 24 Write Disable (WRDI)................................................................................................................................ 25 Read Identification (RDID)........................................................................................................................ 26 Release from Deep Power-down (RDP), Read Electronic Signature (RES)............................................ 27 Read Electronic Manufacturer ID & Device ID (REMS)............................................................................ 29 QPI ID Read (QPIID)................................................................................................................................ 30 Table 6. ID Definitions ...............................................................................................................................30 Read Status Register (RDSR).................................................................................................................. 31 Read Configuration Register (RDCR)....................................................................................................... 32 Write Status Register (WRSR).................................................................................................................. 38 Table 7. Protection Modes..........................................................................................................................39 Enter 4-byte mode (EN4B)....................................................................................................................... 42 Exit 4-byte mode (EX4B).......................................................................................................................... 42 Read Data Bytes (READ)......................................................................................................................... 43 Read Data Bytes at Higher Speed (FAST_READ)................................................................................... 44 Dual Output Read Mode (DREAD)........................................................................................................... 45 2 x I/O Read Mode (2READ).................................................................................................................... 46 Quad Read Mode (QREAD)..................................................................................................................... 47 4 x I/O Read Mode (4READ).................................................................................................................... 48 Fast Double Transfer Rate Read (FASTDTRD)........................................................................................ 50 2 x I/O Double Transfer Rate Read Mode (2DTRD)................................................................................. 51 4 x I/O Double Transfer Rate Read Mode (4DTRD)................................................................................. 52 Preamble Bit ............................................................................................................................................ 54 4 Byte Address Command Set.................................................................................................................. 59 Performance Enhance Mode.................................................................................................................... 65 Performance Enhance Mode Reset.......................................................................................................... 70 2 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-25. 9-26. 9-27. 9-28. 9-29. 9-30. 9-31. 9-32. 9-33. 9-34. 9-35. 9-36. 9-37. Burst Read................................................................................................................................................ 72 Fast Boot.................................................................................................................................................. 73 Sector Erase (SE)..................................................................................................................................... 76 Block Erase (BE32K)................................................................................................................................ 77 Block Erase (BE)...................................................................................................................................... 78 Chip Erase (CE)........................................................................................................................................ 79 Page Program (PP).................................................................................................................................. 80 4 x I/O Page Program (4PP)..................................................................................................................... 82 Deep Power-down (DP)............................................................................................................................ 83 Enter Secured OTP (ENSO)..................................................................................................................... 84 Exit Secured OTP (EXSO)........................................................................................................................ 84 Read Security Register (RDSCUR).......................................................................................................... 84 Write Security Register (WRSCUR).......................................................................................................... 84 Table 8. Security Register Definition..........................................................................................................85 9-38. Write Protection Selection (WPSEL)......................................................................................................... 86 9-39. Advanced Sector Protection..................................................................................................................... 88 9-40. Program/Erase Suspend/Resume............................................................................................................ 97 9-41. Erase Suspend......................................................................................................................................... 97 9-42. Program Suspend..................................................................................................................................... 97 9-43. Write-Resume........................................................................................................................................... 99 9-44. No Operation (NOP)................................................................................................................................. 99 9-45. Software Reset (Reset-Enable (RSTEN) and Reset (RST)).................................................................... 99 9-46. Read SFDP Mode (RDSFDP)................................................................................................................. 101 Table 9. Signature and Parameter Identification Data Values .................................................................102 Table 10. Parameter Table (0): JEDEC Flash Parameter Tables.............................................................103 Table 11. Parameter Table (1): Macronix Flash Parameter Tables...........................................................105 10. RESET................................................................................................................................................................ 107 Table 12. Reset Timing-(Power On).........................................................................................................107 Table 13. Reset Timing-(Other Operation)...............................................................................................107 11. POWER-ON STATE............................................................................................................................................ 108 12. ELECTRICAL SPECIFICATIONS....................................................................................................................... 109 Table 14. ABSOLUTE MAXIMUM RATINGS...........................................................................................109 Table 15. CAPACITANCE TA = 25°C, f = 1.0 MHz...................................................................................109 Table 16. DC CHARACTERISTICS (Temperature = -40°C to 85°C, VCC = 2.7V ~ 3.6V) ...................... 111 Table 17. AC CHARACTERISTICS (Temperature = -40°C to 85°C, VCC = 2.7V ~ 3.6V) ..................... 112 13. OPERATING CONDITIONS................................................................................................................................ 113 Table 18. Power-Up/Down Voltage and Timing ....................................................................................... 115 13-1. INITIAL DELIVERY STATE......................................................................................................................115 14. ERASE AND PROGRAMMING PERFORMANCE............................................................................................. 116 15. DATA RETENTION............................................................................................................................................. 116 16. LATCH-UP CHARACTERISTICS....................................................................................................................... 116 17. ORDERING INFORMATION............................................................................................................................... 117 18. PART NAME DESCRIPTION.............................................................................................................................. 118 19. PACKAGE INFORMATION................................................................................................................................. 119 20. REVISION HISTORY .......................................................................................................................................... 122 P/N: PM2006 3 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 3V 512M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY 1. FEATURES GENERAL • Serial Peripheral Interface compatible -- Mode 0 and Mode 3 • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • 512Mb: 536,870,912 x 1 bit structure or 268,435,456 x 2 bits (two I/O mode) structure or 134,217,728 x 4 bits (four I/O mode) structure • Protocol Support - Single I/O, Dual I/O and Quad I/O • Latch-up protected to 100mA from -1V to Vcc +1V • Low Vcc write inhibit is from 2.3V to 2.5V • Fast read for SPI mode - Support clock frequency up to 166MHz for all protocols - Support Fast Read, 2READ, DREAD, 4READ, QREAD instructions - Support DTR (Double Transfer Rate) Mode - Configurable dummy cycle number for fast read operation • Quad Peripheral Interface (QPI) available • Equal Sectors with 4K byte each, or Equal Blocks with 32K byte each or Equal Blocks with 64K byte each - Any Block can be erased individually • Programming : - 256byte page buffer - Quad Input/Output page program(4PP) to enhance program performance • Typical 100,000 erase/program cycles • 20 years data retention SOFTWARE FEATURES • Input Data Format - 1-byte Command code • Advanced Security Features - Block lock protection The BP0-BP3 and T/B status bits define the size of the area to be protected against program and erase instructions - Advanced sector protection function (Solid and Password Protect) • Additional 4K bit security OTP - Features unique identifier - factory locked identifiable, and customer lockable • Command Reset • Program/Erase Suspend and Resume operation • Electronic Identification - JEDEC 1-byte manufacturer ID and 2-byte device ID - RES command for 1-byte Device ID - REMS command for 1-byte manufacturer ID and 1-byte device ID • Support Serial Flash Discoverable Parameters (SFDP) mode P/N: PM2006 4 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G HARDWARE FEATURES • SCLK Input - Serial clock input • SI/SIO0 - Serial Data Input or Serial Data Input/Output for 2 x I/O read mode and 4 x I/O read mode • SO/SIO1 - Serial Data Output or Serial Data Input/Output for 2 x I/O read mode and 4 x I/O read mode • WP#/SIO2 - Hardware write protection or serial data Input/Output for 4 x I/O read mode • RESET#/SIO3 - Hardware Reset pin or Serial input & Output for 4 x I/O read mode • PACKAGE - 16-pin SOP (300mil) - 8-land WSON (8x6mm) - 24-Ball BGA (5x5 ball array) - All devices are RoHS Compliant and Halogen-free P/N: PM2006 5 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 2. GENERAL DESCRIPTION MX25L51245G is 512Mb bits serial Flash memory, which is configured as 67,108,864 x 8 internally. When it is in two or four I/O mode, the structure becomes 268,435,456 bits x 2 or 134,217,728 bits x 4. MX25L51245G feature a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus while it is in single I/O mode. The three bus signals are a clock input (SCLK), a serial data input (SI), and a serial data output (SO). Serial access to the device is enabled by CS# input. When it is in two I/O read mode, the SI pin and SO pin become SIO0 pin and SIO1 pin for address/dummy bits input and data output. When it is in four I/O read mode, the SI pin, SO pin, WP# and RESET# pin become SIO0 pin, SIO1 pin, SIO2 pin and SIO3 pin for address/dummy bits input and data output. The MX25L51245G MXSMIO (Serial Multi I/O) provides sequential read operation on whole chip. After program/erase command is issued, auto program/erase algorithms which program/erase and verify the specified page or sector/block locations will be executed. Program command is executed on byte basis, or page (256 bytes) basis, or word basis for erase command is executed on sector (4K-byte), block (32K-byte), or block (64K-byte), or whole chip basis. To provide user with ease of interface, a status register is included to indicate the status of the chip. The status read command can be issued to detect completion status of a program or erase operation via WIP bit. Advanced security features enhance the protection and security functions, please see security features section for more details. When the device is not in operation and CS# is high, it is put in standby mode. The MX25L51245G utilizes Macronix's proprietary memory cell, which reliably stores memory contents even after 100,000 program and erase cycles. Table 1. Read performance Comparison Numbers of Dummy Cycles Fast Read (MHz) Dual Output Fast Read (MHz) Quad Output Fast Read (MHz) Dual IO Fast Read (MHz) Quad IO Fast Read (MHz) 4 - - - 84* 70 6 133 133 104 104 84* 8 133* 133* 133* 133 104 10 166 166 166 166 133 Numbers of Dummy Cycles Fast DTR Read Dual I/O DT Read Quad I/O DT Read 4 - 52* 42 6 66 66 52* 8 66* 66 66 10 83 83 83 (MHz) (MHz) (MHz) Note: * mean default status P/N: PM2006 6 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 4. PIN DESCRIPTION 3. PIN CONFIGURATIONS 16-PIN SOP (300mil) NC/SIO3 VCC RESET# NC DNU DNU CS# SO/SIO1 SYMBOL CS# 1 2 3 4 5 6 7 8 SCLK SI/SIO0 NC NC DNU DNU GND WP#/SIO2 16 15 14 13 12 11 10 9 SI/SIO0 SO/SIO1 SCLK WP#/SIO2 8-WSON (8x6mm) CS# SO/SIO1 WP#/SIO2 GND 1 2 3 4 8 7 6 5 NC/SIO3 VCC RESET#/SIO3 SCLK SI/SIO0 RESET# VCC GND NC DNU Note: RESET# pin has internal pull up. 24-Ball BGA (5x5 ball array) 5 NC DESCRIPTION Chip Select Serial Data Input (for 1 x I/O)/ Serial Data Input & Output (for 2xI/O or 4xI/ O read mode) Serial Data Output (for 1 x I/O)/ Serial Data Input & Output (for 2xI/O or 4xI/ O read mode) Clock Input Write protection: connect to GND or Serial Data Input & Output (for 4xI/O read mode) No Connection or Serial Data Input & Output (for 4xI/O read mode) Hardware Reset Pin Active low + 3V Power Supply Ground No Connection Do Not Use (It may connect to internal signal inside) NC NC NC NC RESET# VCC NC GND NC SI/SIO0 NC NC SCLK CS# SO/SIO1 NC NC NC B C 4 WP#/SIO2 NC/SIO3 NC 3 2 1 A P/N: PM2006 NC D NC E 7 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 5. BLOCK DIAGRAM X-Decoder Address Generator Memory Array Page Buffer SI/SIO0 Data Register Y-Decoder SRAM Buffer CS# WP#/SIO2 RESET#/SIO3 RESET pin SCLK Mode Logic State Machine HV Generator Clock Generator Output Buffer SO/SIO1 P/N: PM2006 Sense Amplifier 8 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 6. DATA PROTECTION During power transition, there may be some false system level signals which result in inadvertent erasure or programming. The device is designed to protect itself from these accidental write cycles. The state machine will be reset as standby mode automatically during power up. In addition, the control register architecture of the device constrains that the memory contents can only be changed after specific command sequences have completed successfully. In the following, there are several features to protect the system from the accidental write cycles during VCC powerup and power-down or from system noise. • Valid command length checking: The command length will be checked whether it is at byte base and completed on byte boundary. • Write Enable (WREN) command: WREN command is required to set the Write Enable Latch bit (WEL) before other command to change data. • Deep Power Down Mode: By entering deep power down mode, the flash device also is under protected from writing all commands except Release from deep power down mode command (RDP) and Read Electronic Signature command (RES), Erase/Program suspend command, Erase/Program resume command and softreset command. • Advanced Security Features: there are some protection and security features which protect content from inadvertent write and hostile access. P/N: PM2006 9 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G I. Block lock protection - The Software Protected Mode (SPM) use (BP3, BP2, BP1, BP0 and T/B) bits to allow part of memory to be protected as read only. The protected area definition is shown as Table 2 Protected Area Sizes, the protected areas are more flexible which may protect various area by setting value of BP0-BP3 bits. - The Hardware Proteced Mode (HPM) use WP#/SIO2 to protect the (BP3, BP2, BP1, BP0) bits and Status Register Write Protect bit. - In four I/O and QPI mode, the feature of HPM will be disabled. Table 2. Protected Area Sizes Protected Area Sizes (T/B bit = 0) Status bit BP3 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 BP2 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 BP1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 BP0 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 Protect Level 512Mb 0 (none) 1 (1 block, protected block 1023rd) 2 (2 blocks, protected block 1022nd~1023rd) 3 (4 blocks, protected block 1020th~1023rd) 4 (8 blocks, protected block 1016th~1023rd) 5 (16 blocks, protected block 1008th~1023rd) 6 (32 blocks, protected block 992nd~1023rd) 7 (64 blocks, protected block 960th~1023rd) 8 (128 blocks, protected block 896th~1023rd) 9 (256 blocks, protected block 768th~1023rd) 10 (512 blocks, protected block 512nd~1023rd) 11 (1024 blocks, protected all) 12 (1024 blocks, protected all) 13 (1024 blocks, protected all) 14 (1024 blocks, protected all) 15 (1024 blocks, protected all) Protected Area Sizes (T/B bit = 1) Status bit BP3 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 P/N: PM2006 BP2 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 BP1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 Protect Level BP0 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 512Mb 0 (none) 1 (1 block, protected block 0th) 2 (2 blocks, protected block 0th~1th) 3 (4 blocks, protected block 0th~3rd) 4 (8 blocks, protected block 0th~7th) 5 (16 blocks, protected block 0th~15th) 6 (32 blocks, protected block 0th~31st) 7 (64 blocks, protected block 0th~63rd) 8 (128 blocks, protected block 0th~127th) 9 (256 blocks, protected block 0th~255th) 10 (512 blocks, protected block 0th~511st) 11 (1024 blocks, protected all) 12 (1024 blocks, protected all) 13 (1024 blocks, protected all) 14 (1024 blocks, protected all) 15 (1024 blocks, protected all) 10 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G II. Additional 4K-bit secured OTP for unique identifier: to provide 4K-bit one-time program area for setting device unique serial number - Which may be set by factory or system customer. - Security register bit 0 indicates whether the chip is locked by factory or not. - To program the 4K-bit secured OTP by entering 4K-bit secured OTP mode (with Enter Security OTP command), and going through normal program procedure, and then exiting 4K-bit secured OTP mode by writing Exit Security OTP command. - Customer may lock-down the customer lockable secured OTP by writing WRSCUR(write security register) command to set customer lock-down bit1 as "1". Please refer to "Table 8. Security Register Definition" for security register bit definition and "Table 3. 4K-bit Secured OTP Definition" for address range definition. - Note: Once lock-down whatever by factory or customer, it cannot be changed any more. While in 4K-bit secured OTP mode, array access is not allowed. Table 3. 4K-bit Secured OTP Definition Address range Size Standard Factory Lock xxx000~xxx00F 128-bit ESN (electrical serial number) xxx010~xxx1FF 3968-bit N/A P/N: PM2006 11 Customer Lock Determined by customer REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 7. Memory Organization Table 4. Memory Organization 2042 … 3FEFFFFh … 3FF0FFFh 3FEF000h … individual 16 sectors lock/unlock unit:4K-byte … … … 3FF0000h 16367 3FE8000h 3FE8FFFh 16359 3FE7000h 3FE7FFFh … 16360 16352 3FE0000h 3FE0FFFh 16351 3FDF000h 3FDFFFFh … 1021 16368 16344 3FD8000h 3FD8FFFh 16343 3FD7000h 3FD7FFFh … 2043 3FF7FFFh … 2044 individual block lock/unlock unit:64K-byte 3FF8FFFh 3FF7000h … 1022 3FF8000h 16375 … 2045 16376 … 2046 3FFFFFFh … 1023 Address Range 3FFF000h … 2047 … 16383 … Sector … Block(64K-byte) Block(32K-byte) 16336 3FD0000h 3FD0FFFh 47 002F000h 002FFFFh 0 0 P/N: PM2006 … … … … … 0020FFFh 001F000h 001FFFFh … 0020000h 31 … 32 0018000h 0018FFFh 23 0017000h 0017FFFh … 24 0010000h 0010FFFh 15 000F000h 000FFFFh … 16 8 0008000h 0008FFFh 7 0007000h 0007FFFh … 1 0027FFFh … 2 027000h … 1 39 … 3 0028FFFh … individual block lock/unlock unit:64K-byte 0028000h … 4 40 … 2 … 5 … individual block lock/unlock unit:64K-byte 0 0000000h 0000FFFh 12 individual 16 sectors lock/unlock unit:4K-byte REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 8. DEVICE OPERATION 1. Before a command is issued, status register should be checked to ensure device is ready for the intended operation. 2. When incorrect command is inputted to this device, this device becomes standby mode and keeps the standby mode until next CS# falling edge. In standby mode, SO pin of this device should be High-Z. 3. When correct command is inputted to this device, this device becomes active mode and keeps the active mode until next CS# rising edge. 4. Input data is latched on the rising edge of Serial Clock (SCLK) and data shifts out on the falling edge of SCLK. The difference of Serial mode 0 and mode 3 is shown as "Serial Modes Supported". 5. For the following instructions: RDID, RDSR, RDSCUR, READ/READ4B, FAST_READ/FAST_READ4B, 2READ/2READ4B, DREAD/DREAD4B, 4READ/4READ4B, QREAD/QREAD4B, RDSFDP, RES, REMS, QPIID, RDDPB, RDSPB, RDPASS, RDLR, RDEAR, RDFBR, RDSPBLK, RDCR, the shifted-in instruction sequence is followed by a data-out sequence. After any bit of data being shifted out, the CS# can be high. For the following instructions: WREN, WRDI, WRSR, SE/SE4B, BE32K/BE32K4B, BE/BE4B, CE, PP/PP4B, 4PP/4PP4B, DP, ENSO, EXSO, WRSCUR, EN4B, EX4B, WPSEL, GBLK, GBULK, SPBLK, SUSPEND, RESUME, NOP, RSTEN, RST, EQIO, RSTQIO the CS# must go high exactly at the byte boundary; otherwise, the instruction will be rejected and not executed. 6. During the progress of Write Status Register, Program, Erase operation, to access the memory array is neglected and not affect the current operation of Write Status Register, Program, Erase. Figure 1. Serial Modes Supported CPOL CPHA shift in (Serial mode 0) 0 0 SCLK (Serial mode 3) 1 1 SCLK SI shift out MSB SO MSB Note: CPOL indicates clock polarity of Serial master, CPOL=1 for SCLK high while idle, CPOL=0 for SCLK low while not transmitting. CPHA indicates clock phase. The combination of CPOL bit and CPHA bit decides which Serial mode is supported. P/N: PM2006 13 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Figure 2. Serial Input Timing tSHSL CS# tCHSL tSLCH tCHSH tSHCH SCLK tDVCH tCHCL tCHDX tCLCH LSB MSB SI High-Z SO Figure 3. Output Timing CS# tCH SCLK tCLQV tCLQX tCL tCLQV tCLQX LSB SO SI P/N: PM2006 tSHQZ ADDR.LSB IN 14 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 8-1. 256Mb Address Protocol The original 24 bit address protocol of serial Flash can only access density size below 128Mb. For the memory device of 256Mb and above, the 32bit address is requested for access higher memory size. The MX25L51245G provides three different methods to access the whole density: (1) Command entry 4-byte address mode: Issue Enter 4-Byte mode command to set up the 4BYTE bit in Configuration Register bit. After 4BYTE bit has been set, the number of address cycle become 32-bit. (2) Extended Address Register (EAR): configure the memory device into four 128Mb segments to select which one is active through the EAR<0-1>. (3) 4-byte Address Command Set: When issuing 4-byte address command set, 4-byte address (A31-A0) is requested after the instruction code. Please note that it is not necessary to issue EN4B command before issuing any of 4-byte command set. Enter 4-Byte Address Mode In 4-byte Address mode, all instructions are 32-bits address clock cycles. By using EN4B and EX4B to enable and disable the 4-byte address mode. When 4-byte address mode is enabled, the EAR<0-1> becomes "don't care" for all instructions requiring 4-byte address. The EAR function will be disabled when 4-byte mode is enabled. Extended Address Register The device provides an 8-bit volatile register for extended Address Register: it identifies the extended address (A31~A24) above 128Mb density by using original 3-byte address. Extended Address Register (EAR) Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 A31 A30 A29 A28 A27 A26 A25 A24 For the MX25L51245G the A31 to A26 are Don't Care. During EAR, reading these bits will read as 0. The bit 0 is default as "0". P/N: PM2006 15 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Figure 6. EAR Operation Segments 03FFFFFFh EAR<1-0>= 11 03000000h 02FFFFFFh EAR<1-0>= 10 02000000h 01FFFFFFh EAR<1-0>= 01 01000000h 00FFFFFFh EAR<1-0>= 00 00000000h When under EAR mode, Read, Program, Erase operates in the selected segment by using 3-byte address mode. For the read operation, the whole array data can be continually read out with one command. Data output starts from the selected top or bottom 128Mb, but it can cross the boundary. When the last byte of the segment is reached, the next byte (in a continuous reading) is the first byte of the next segment. However, the EAR (Extended Address Register) value does not change. The random access reading can only be operated in the selected segment. The Chip erase command will erase the whole chip and is not limited by EAR selected segment. However, the sector erase ,block erase , program operation are limited in selected segment and will not cross the boundary. Figure 4. Write EAR Register (WREAR) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCLK Mode 0 command SI EAR In C5h 7 4 5 3 2 1 0 MSB High-Z SO 6 Figure 5. Write EAR Register (WREAR) Sequence (QPI Mode) CS# Mode 3 0 1 2 3 Mode 3 SCLK Mode 0 Mode 0 Command EAR in SIO[3:0] P/N: PM2006 C5h 16 H0 L0 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Figure 7. Read EAR (RDEAR) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCLK Mode 0 command C8h SI SO EAR Out High-Z 7 6 5 4 3 EAR Out 2 1 0 7 6 5 4 3 2 1 0 7 MSB MSB Figure 8. Read EAR (RDEAR) Sequence (QPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 N SCLK Mode 0 SIO[3:0] C8h H0 L0 H0 L0 H0 L0 H0 L0 MSB LSB EAR Out P/N: PM2006 EAR Out 17 EAR Out EAR Out REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 8-2. Quad Peripheral Interface (QPI) Read Mode QPI protocol enables user to take full advantage of Quad I/O Serial Flash by providing the Quad I/O interface in command cycles, address cycles and as well as data output cycles. Enable QPI mode By issuing 35H command, the QPI mode is enable. Figure 9. Enable QPI Sequence CS# MODE 3 SCLK 0 1 2 3 4 5 6 7 MODE 0 SIO0 35h SIO[3:1] Reset QPI (RSTQIO) To reset the QPI mode, the RSTQIO (F5H) command is required. After the RSTQIO command is issued, the device returns from QPI mode (4 I/O interface in command cycles) to SPI mode (1 I/O interface in command cycles). Note: For EQIO and RSTQIO commands, CS# high width has to follow "write spec" tSHSL for next instruction. Figure 10. Reset QPI Mode CS# SCLK SIO[3:0] P/N: PM2006 F5h 18 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9. COMMAND DESCRIPTION Table 5. Command Set Read/Write Array Commands FAST READ 2READ (2 x I/O read (fast read command) data) 4READ READ (normal read) Mode 1st byte SPI 3/4 03 (hex) SPI 3/4 0B (hex) SPI 3/4 BB (hex) SPI 3/4 3B (hex) SPI/QPI 3/4 EB (hex) SPI 3/4 6B (hex) SPI 3/4 0D (hex) SPI 3/4 BD (hex) 2nd byte ADD1 ADD1 ADD1 ADD1 ADD1 ADD1 ADD1 ADD1 3rd byte ADD2 ADD2 ADD2 ADD2 ADD2 ADD2 ADD2 ADD2 4th byte ADD3 Address Bytes 5th byte DREAD (1I 2O read) QREAD (4 I/O read start from (1I 4O read) bottom 128Mb) FASTDTRD 2DTRD (fast DT (Dual I/O DT read) Read) Command (byte) ADD3 ADD3 ADD3 ADD3 ADD3 ADD3 ADD3 Dummy* Dummy* Dummy* Dummy* Dummy* Dummy* Dummy* Data Cycles Action n bytes read n bytes read Quad I/ n bytes read n bytes read n bytes read n bytes read out until CS# out until CS# out by 2 x I/ out by Dual O read for out by Quad out (Double output until Transfer bottom goes high goes high O until CS# output until Rate) until goes high CS# goes 128Mb with CS# goes 6 dummy high CS# goes high high cycles Mode 4DTRD (Quad I/O DT Read) SPI/QPI PP (page program) SPI/QPI 4PP (quad page program) SPI SE (sector erase) SPI/QPI Address Bytes 3/4 3/4 3/4 3/4 3/4 3/4 1st byte ED (hex) 02 (hex) 38 (hex) 20 (hex) 52 (hex) D8 (hex) 2nd byte ADD1 ADD1 ADD1 ADD1 ADD1 3rd byte ADD2 ADD2 ADD2 ADD2 ADD2 4th byte ADD3 ADD3 ADD3 ADD3 ADD3 5th byte Dummy* Command (byte) Data Cycles Action n bytes read out (Double Transfer Rate) by 2xI/ O until CS# goes high BE 32K BE CE (block erase (block erase (chip erase) 32KB) 64KB) SPI/QPI SPI/QPI SPI/QPI 1-256 1-256 n bytes read to program quad input to erase the to erase the to erase the selected selected 32K selected out (Double the selected to program block Transfer page the selected sector block Rate) by 4xI/ page O until CS# goes high 0 60 or C7 (hex) to erase whole chip * Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in configuration register. Notes 2: Please note the address cycles above are based on 3-byte address mode. After enter 4-byte address mode by EN4B command, the address cycles will be increased to 4byte. P/N: PM2006 19 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Read/Write Array Commands (4 Byte Address Command Set) Command (byte) Mode READ4B FAST READ4B 2READ4B DREAD4B 4READ4B QREAD4B Address Bytes SPI 4 SPI 4 SPI 4 SPI 4 SPI/QPI 4 SPI 4 FRDTR4B (fast DT read) SPI 4 1st byte 13 (hex) 0C (hex) BC (hex) 3C (hex) EC (hex) 6C (hex) 0E (hex) 2nd byte ADD1 ADD1 ADD1 ADD1 ADD1 ADD1 ADD1 3rd byte ADD2 ADD2 ADD2 ADD2 ADD2 ADD2 ADD2 4th byte ADD3 ADD3 ADD3 ADD3 ADD3 ADD3 ADD3 5th byte ADD4 6th byte ADD4 ADD4 ADD4 ADD4 ADD4 ADD4 Dummy* Dummy* Dummy* Dummy* Dummy* Dummy* Data Cycles Action Read data n bytes read read data byte read data byte read data byte Read data byte read data byte out (Double by by 2 x I/O with by Dual Output by 4 x I/O with byte by Quad by with 4 byte 4 byte address Output with 4 Transfer Rate) 4 byte address 4 byte address 4 byte address byte address until CS# goes address high 4DTRD4B (Quad I/O DT Read) SPI/QPI 4 PP4B 4PP4B Address Bytes 2DTRD4B (Dual I/O DT Read) SPI 4 SPI/QPI 4 Command (byte) Mode SPI 4 BE4B (block erase 64KB) SPI/QPI 4 BE32K4B (block erase 32KB) SPI/QPI 4 SE4B (Sector erase 4KB) SPI/QPI 4 1st byte BE (hex) EE (hex) 12 (hex) 3E (hex) DC (hex) 5C (hex) 21 (hex) 2nd byte ADD1 ADD1 ADD1 ADD1 ADD1 ADD1 ADD1 3rd byte ADD2 ADD2 ADD2 ADD2 ADD2 ADD2 ADD2 4th byte ADD3 ADD3 ADD3 ADD3 ADD3 ADD3 ADD3 ADD4 ADD4 ADD4 ADD4 ADD4 5th byte ADD4 ADD4 6th byte Dummy* Dummy* Data Cycles Action P/N: PM2006 1-256 1-256 to erase the to erase the to erase the n bytes read to program the Quad input to n bytes read out (Double selected page program the selected (64KB) selected (32KB) selected (4KB) out (Double with 4byte selected page block with block with sector with Transfer Rate) Transfer Rate) 4byte address 4byte address 4byte address address with 4byte by 2xI/O until by 4xI/O until address CS# goes high CS# goes high 20 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Register/Setting Commands Mode SPI/QPI SPI/QPI SPI/QPI RDCR (read configuration register) SPI/QPI 1st byte 06 (hex) 04 (hex) 05 (hex) 15 (hex) Command (byte) WREN WRDI (write enable) (write disable) RDSR (read status register) WRSR RDEAR WREAR (write status/ (read extended (write extended configuration address address register) register) register) SPI/QPI SPI/QPI SPI/QPI 01 (hex) 2nd byte Values 3rd byte Values C8 (hex) C5 (hex) 4th byte 5th byte Data Cycles Action sets the (WEL) resets the to read out the to read out the write enable (WEL) write values of the values of the latch bit enable latch bit status register configuration register Command (byte) WPSEL (Write Protect Selection) EQIO (Enable QPI) Mode 1st byte SPI/QPI 68 (hex) SPI 35 (hex) Action to enter and enable individal block protect mode Entering the QPI mode Command (byte) DP (Deep power down) Mode 1st byte 1-2 to write new values of the status/ configuration register RSTQIO (Reset QPI) EN4B (enter 4-byte mode) EX4B (exit 4-byte mode) QPI F5 (hex) SPI/QPI B7 (hex) SPI/QPI E9 (hex) 1 read extended write extended address address register register PGM/ERS Suspend (Suspends Program/ Erase) SPI/QPI B0 (hex) PGM/ERS Resume (Resumes Program/ Erase) SPI/QPI 30 (hex) 2nd byte 3rd byte 4th byte 5th byte Data Cycles Exiting the QPI to enter 4-byte to exit 4-byte mode mode and set mode and clear 4BYTE bit as 4BYTE bit to "1" be "0" SPI/QPI B9 (hex) RDP (Release from deep power down) SPI/QPI AB (hex) SBL (Set Burst Length) SPI/QPI C0 (hex) enters deep power down mode release from deep power down mode to set Burst length RDFBR WRFBR ESFBR (read fast boot (write fast boot (erase fast register) register) boot register) SPI SPI SPI 16(hex) 17(hex) 18(hex) 2nd byte 3rd byte 4th byte 5th byte Data Cycles Action P/N: PM2006 1-4 21 4 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G ID/Security Commands Command (byte) Mode Address Bytes 1st byte REMS RDID RES (read electronic QPIID (read identific- (read electronic manufacturer & (QPI ID Read) ation) ID) device ID) SPI SPI/QPI SPI QPI 0 0 0 0 9F (hex) AB (hex) 90 (hex) AF (hex) 2nd byte x 3rd byte x 4th byte Address Bytes SPI/QPI 0 1st byte 2B (hex) 2F (hex) Mode RDSCUR (read security register) EXSO (exit secured OTP) SPI/QPI 3 5A (hex) SPI/QPI 0 B1 (hex) SPI/QPI 0 C1 (hex) ADD1 x ADD2 ADD1 (Note 1) ADD3 outputs JEDEC to read out output the ID: 1-byte 1-byte Device Manufacturer Manufacturer ID ID & Device ID ID & 2-byte Device ID WRSCUR (write security register) SPI/QPI 0 Command (byte) ENSO (enter secured OTP) x 5th byte Action RDSFDP Dummy (8) Read SFDP mode ID in QPI interface to enter the to exit the 4K-bit secured 4K-bit secured OTP mode OTP mode SPI 0 WRPASS (write password register) SPI 0 RDPASS (read password register) SPI 0 2C (hex) 2D (hex) 28 (hex) 27 (hex) 2 2 1-8 1-8 GBLK (gang block lock) GBULK (gang block unlock) WRLR (write Lock register) RDLR (read Lock register) SPI/QPI 0 SPI/QPI 0 SPI 0 7E (hex) 98 (hex) 2nd byte 3rd byte 4th byte 5th byte Data Cycles Action whole chip to read value to set the of security lock-down bit write protect register as "1" (once lock-down, cannot be updated) whole chip unprotect Address Bytes PASSULK (password unlock) SPI 0 WRSPB (SPB bit program) SPI 4 ESSPB (all SPB bit erase) SPI 0 RDSPB (read SPB status) SPI 4 SPBLK (SPB lock set) SPI 0 1st byte 29 (hex) E3 (hex) E4 (hex) E2 (hex) A6 (hex) Command (byte) Mode RDSPBLK WRDPB (SPB lock (write DPB register read) register) SPI SPI 0 4 A7 (hex) RDDPB (read DPB register) SPI 4 E1 (hex) E0 (hex) 2nd byte ADD1 ADD1 ADD1 ADD1 3rd byte ADD2 ADD2 ADD2 ADD2 4th byte ADD3 ADD3 ADD3 ADD3 5th byte ADD4 ADD4 ADD4 ADD4 1 1 Data Cycles 8 1 2 Action P/N: PM2006 22 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Reset Commands Mode SPI/QPI SPI/QPI RST (Reset Memory) SPI/QPI 1st byte 00 (hex) 66 (hex) 99 (hex) Command (byte) NOP RSTEN (No Operation) (Reset Enable) 2nd byte 3rd byte 4th byte 5th byte Action Note 1: The count base is 4-bit for ADD(2) and Dummy(2) because of 2 x I/O. And the MSB is on SO/SIO1 which is different from 1 x I/O condition. Note 2: ADD=00H will output the manufacturer ID first and AD=01H will output device ID first. Note 3: It is not recommended to adopt any other code not in the command definition table, which will potentially enter the hidden mode. Note 4: Before executing RST command, RSTEN command must be executed. If there is any other command to interfere, the reset operation will be disabled. Note 5: The number in parentheses after "ADD" or "Data" stands for how many clock cycles it has. For example, "Data(8)" represents there are 8 clock cycles for the data in. Please note the number after "ADD" are based on 3-byte address mode, for 4-byte address mode, which will be increased. P/N: PM2006 23 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-1. Write Enable (WREN) The Write Enable (WREN) instruction is for setting Write Enable Latch (WEL) bit. For those instructions like PP/ PP4B, 4PP/4PP4B, SE/SE4B, BE32K/BE32K4B, BE/BE4B, CE, and WRSR, which are intended to change the device content WEL bit should be set every time after the WREN instruction setting the WEL bit. The sequence of issuing WREN instruction is: CS# goes low→sending WREN instruction code→ CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care in SPI mode. Figure 11. Write Enable (WREN) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 SCLK Mode 0 Command SI 06h High-Z SO Figure 12. Write Enable (WREN) Sequence (QPI Mode) CS# 0 Mode 3 1 SCLK Mode 0 Command 06h SIO[3:0] P/N: PM2006 24 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-2. Write Disable (WRDI) The Write Disable (WRDI) instruction is to reset Write Enable Latch (WEL) bit. The sequence of issuing WRDI instruction is: CS# goes low→sending WRDI instruction code→CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care in SPI mode. The WEL bit is reset by following situations: - Power-up - Reset# pin driven low - WRDI command completion - WRSR command completion - PP/PP4B command completion - 4PP/4PP4B command completion - SE/SE4B command completion - BE32K/BE32K4B command completion - BE/BE4B command completion - CE command completion - PGM/ERS Suspend command completion - Softreset command completion - WRSCUR command completion - WPSEL command completion - GBLK command completion - GBULK command completion - WREAR command completion - WRLR command completion - WRPASS command completion - PASSULK command completion - SPBLK command completion - WRSPB command completion - ESSPB command completion - WRDPB command completion - WRFBR command completion - ESFBR command completion Figure 13. Write Disable (WRDI) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 SCLK Mode 0 SI SO P/N: PM2006 Command 04h High-Z 25 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Figure 14. Write Disable (WRDI) Sequence (QPI Mode) CS# 0 Mode 3 1 SCLK Mode 0 Command 04h SIO[3:0] 9-3. Read Identification (RDID) The RDID instruction is for reading the manufacturer ID of 1-byte and followed by Device ID of 2-byte. The Macronix Manufacturer ID and Device ID are listed as Table 6 ID Definitions. The sequence of issuing RDID instruction is: CS# goes low→ sending RDID instruction code→24-bits ID data out on SO→ to end RDID operation can drive CS# to high at any time during data out. While Program/Erase operation is in progress, it will not decode the RDID instruction, therefore there's no effect on the cycle of program/erase operation which is currently in progress. When CS# goes high, the device is at standby stage. Figure 15. Read Identification (RDID) Sequence (SPI mode only) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 13 14 15 16 17 18 28 29 30 31 SCLK Mode 0 Command SI 9Fh Manufacturer Identification SO High-Z 7 6 5 2 MSB P/N: PM2006 1 Device Identification 0 15 14 13 3 2 1 0 MSB 26 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-4. Release from Deep Power-down (RDP), Read Electronic Signature (RES) The Release from Deep Power-down (RDP) instruction is completed by driving Chip Select (CS#) High. When Chip Select (CS#) is driven High, the device is put in the Stand-by Power mode. If the device was not previously in the Deep Power-down mode, the transition to the Stand-by Power mode is immediate. If the device was previously in the Deep Power-down mode, though, the transition to the Stand-by Power mode is delayed by tRES2, and Chip Select (CS#) must remain High for at least tRES2(max), as specified in Table 17 AC Characteristics. Once in the Stand-by Power mode, the device waits to be selected, so that it can receive, decode and execute instructions. The RDP instruction is only for releasing from Deep Power Down Mode. Reset# pin goes low will release the Flash from deep power down mode. RES instruction is for reading out the old style of 8-bit Electronic Signature, whose values are shown as Table 6 ID Definitions. This is not the same as RDID instruction. It is not recommended to use for new design. For new design, please use RDID instruction. Even in Deep power-down mode, the RDP and RES are also allowed to be executed, only except the device is in progress of program/erase/write cycle; there's no effect on the current program/erase/write cycle in progress. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. The RES instruction is ended by CS# goes high after the ID been read out at least once. The ID outputs repeatedly if continuously send the additional clock cycles on SCLK while CS# is at low. If the device was not previously in Deep Power-down mode, the device transition to standby mode is immediate. If the device was previously in Deep Power-down mode, there's a delay of tRES2 to transit to standby mode, and CS# must remain to high at least tRES2(max). Once in the standby mode, the device waits to be selected, so it can be receive, decode, and execute instruction. Figure 16. Read Electronic Signature (RES) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 SCLK Mode 0 Command SI ABh tRES2 3 Dummy Bytes 23 22 21 3 2 1 0 MSB SO Electronic Signature Out High-Z 7 6 5 4 3 2 1 0 MSB Deep Power-down Mode P/N: PM2006 27 Stand-by Mode REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Figure 17. Read Electronic Signature (RES) Sequence (QPI Mode) CS# MODE 3 0 1 2 3 4 5 6 7 SCLK MODE 0 3 Dummy Bytes Command SIO[3:0] X ABh X X X X X H0 L0 MSB LSB Data In Data Out Stand-by Mode Deep Power-down Mode Figure 18. Release from Deep Power-down (RDP) Sequence (SPI Mode) CS# 0 Mode 3 1 2 3 4 5 6 tRES1 7 SCLK Mode 0 Command SI ABh High-Z SO Deep Power-down Mode Stand-by Mode Figure 19. Release from Deep Power-down (RDP) Sequence (QPI Mode) CS# Mode 3 tRES1 0 1 SCLK Mode 0 Command SIO[3:0] ABh Deep Power-down Mode P/N: PM2006 28 Stand-by Mode REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-5. Read Electronic Manufacturer ID & Device ID (REMS) The REMS instruction is an alternative to the Release from Power-down/Device ID instruction that provides both the JEDEC assigned manufacturer ID and the specific device ID. The REMS instruction is very similar to the Release from Power-down/Device ID instruction. The instruction is initiated by driving the CS# pin low and shift the instruction code "90h" followed by two dummy bytes and one bytes address (A7~A0). After which, the Manufacturer ID for Macronix (C2h) and the Device ID are shifted out on the falling edge of SCLK with most significant bit (MSB) first. The Device ID values are listed in Table 6 of ID Definitions. If the one-byte address is initially set to 01h, then the device ID will be read first and then followed by the Manufacturer ID. The Manufacturer and Device IDs can be read continuously, alternating from one to the other. The instruction is completed by driving CS# high. Figure 20. Read Electronic Manufacturer & Device ID (REMS) Sequence (SPI Mode only) CS# SCLK Mode 3 0 1 2 Mode 0 3 4 5 6 7 8 Command SI 9 10 2 Dummy Bytes 15 14 13 90h 3 2 1 0 High-Z SO CS# 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCLK ADD (1) SI 7 6 5 4 3 2 1 0 Manufacturer ID SO 7 6 5 4 3 2 1 Device ID 0 7 6 5 4 3 2 MSB MSB 1 0 7 MSB Notes: (1) ADD=00H will output the manufacturer's ID first and ADD=01H will output device ID first. P/N: PM2006 29 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-6. QPI ID Read (QPIID) User can execute this QPIID Read instruction to identify the Device ID and Manufacturer ID. The sequence of issue QPIID instruction is CS# goes low→sending QPI ID instruction→Data out on SO→CS# goes high. Most significant bit (MSB) first. After the command cycle, the device will immediately output data on the falling edge of SCLK. The manufacturer ID, memory type, and device ID data byte will be output continuously, until the CS# goes high. Table 6. ID Definitions Command Type RDID 9Fh RES ABh REMS 90h QPIID AFh P/N: PM2006 MX25L51245G Manufactory ID C2 Manufactory ID C2 Manufactory ID C2 Memory type 20 Electronic ID 19 Device ID 19 Memory type 20 30 Memory density 1A Memory density 1A REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-7. Read Status Register (RDSR) The RDSR instruction is for reading Status Register Bits. The Read Status Register can be read at any time (even in program/erase/write status register condition). It is recommended to check the Write in Progress (WIP) bit before sending a new instruction when a program, erase, or write status register operation is in progress. The sequence of issuing RDSR instruction is: CS# goes low→ sending RDSR instruction code→ Status Register data out on SO. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. Figure 21. Read Status Register (RDSR) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCLK Mode 0 command 05h SI SO Status Register Out High-Z 7 6 5 4 3 2 1 Status Register Out 0 7 6 5 4 3 2 1 0 7 MSB MSB Figure 22. Read Status Register (RDSR) Sequence (QPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 N SCLK Mode 0 SIO[3:0] 05h H0 L0 H0 L0 H0 L0 H0 L0 MSB LSB Status Byte Status Byte Status Byte P/N: PM2006 31 Status Byte REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-8. Read Configuration Register (RDCR) The RDCR instruction is for reading Configuration Register Bits. The Read Configuration Register can be read at any time (even in program/erase/write configuration register condition). It is recommended to check the Write in Progress (WIP) bit before sending a new instruction when a program, erase, or write configuration register operation is in progress. The sequence of issuing RDCR instruction is: CS# goes low→ sending RDCR instruction code→ Configuration Register data out on SO. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. Figure 23. Read Configuration Register (RDCR) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCLK Mode 0 command 15h SI SO Configuration register Out High-Z 7 6 5 4 3 2 1 0 Configuration register Out 7 6 5 4 3 2 1 0 7 MSB MSB Figure 24. Read Configuration Register (RDCR) Sequence (QPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 N SCLK Mode 0 SIO[3:0] 15h H0 L0 H0 L0 H0 L0 H0 L0 MSB LSB Config. Byte Config. Byte Config. Byte P/N: PM2006 32 Config. Byte REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G For user to check if Program/Erase operation is finished or not, RDSR instruction flow are shown as follows: Figure 25. Program/Erase flow with read array data start WREN command RDSR command* WEL=1? No Yes Program/erase command Write program data/address (Write erase address) RDSR command WIP=0? No Yes RDSR command Read WEL=0, BP[3:0], QE, and SRWD data Read array data (same address of PGM/ERS) No Verify OK? Yes Program/erase successfully Program/erase another block? No Program/erase fail Yes * Issue RDSR to check BP[3:0]. * If WPSEL = 1, issue RDSPB and RDDPB to check the block status. Program/erase completed P/N: PM2006 33 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Figure 26. Program/Erase flow without read array data (read P_FAIL/E_FAIL flag) start WREN command RDSR command* WEL=1? No Yes Program/erase command Write program data/address (Write erase address) RDSR command WIP=0? No Yes RDSR command Read WEL=0, BP[3:0], QE, and SRWD data RDSCUR command Yes P_FAIL/E_FAIL =1 ? No Program/erase fail Program/erase successfully Program/erase another block? No Yes * Issue RDSR to check BP[3:0]. * If WPSEL = 1, issue RDSPB and RDDPB to check the block status. Program/erase completed P/N: PM2006 34 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Status Register The definition of the status register bits is as below: WIP bit. The Write in Progress (WIP) bit, a volatile bit, indicates whether the device is busy in program/erase/write status register progress. When WIP bit sets to 1, which means the device is busy in program/erase/write status register progress. When WIP bit sets to 0, which means the device is not in progress of program/erase/write status register cycle. WEL bit. The Write Enable Latch (WEL) bit, a volatile bit, indicates whether the device is set to internal write enable latch. When WEL bit sets to 1, which means the internal write enable latch is set, the device can accept program/ erase/write status register instruction. When WEL bit sets to 0, which means no internal write enable latch; the device will not accept program/erase/write status register instruction. The program/erase command will be ignored if it is applied to a protected memory area. To ensure both WIP bit & WEL bit are both set to 0 and available for next program/erase/operations, WIP bit needs to be confirm to be 0 before polling WEL bit. After WIP bit confirmed, WEL bit needs to be confirm to be 0. BP3, BP2, BP1, BP0 bits. The Block Protect (BP3, BP2, BP1, BP0) bits, non-volatile bits, indicate the protected area (as defined in Table 2) of the device to against the program/erase instruction without hardware protection mode being set. To write the Block Protect (BP3, BP2, BP1, BP0) bits requires the Write Status Register (WRSR) instruction to be executed. Those bits define the protected area of the memory to against Page Program (PP), Sector Erase (SE), Block Erase 32KB (BE32K), Block Erase (BE) and Chip Erase (CE) instructions (only if Block Protect bits (BP3:BP0) set to 0, the CE instruction can be executed). The BP3, BP2, BP1, BP0 bits are "0" as default. Which is un-protected. QE bit. The Quad Enable (QE) bit, non-volatile bit, while it is "0" (factory default), it performs non-Quad and WP#, RESET# are enable. While QE is "1", it performs Quad I/O mode and WP#, RESET# are disabled. In the other word, if the system goes into four I/O mode (QE=1), the feature of HPM and RESET will be disabled. SRWD bit. The Status Register Write Disable (SRWD) bit, non-volatile bit, is operated together with Write Protection (WP#/SIO2) pin for providing hardware protection mode. The hardware protection mode requires SRWD sets to 1 and WP#/SIO2 pin signal is low stage. In the hardware protection mode, the Write Status Register (WRSR) instruction is no longer accepted for execution and the SRWD bit and Block Protect bits (BP3, BP2, BP1, BP0) are read only. The SRWD bit defaults to be "0". Status Register bit7 SRWD (status register write protect) bit6 QE (Quad Enable) bit5 BP3 (level of protected block) bit4 BP2 (level of protected block) 1=Quad 1=status Enable register write (note 1) (note 1) 0=not Quad disable Enable Non-volatile Non-volatile Non-volatile Non-volatile bit bit bit bit Note 1: see the Table 2 "Protected Area Size". P/N: PM2006 bit3 BP1 (level of protected block) bit2 BP0 (level of protected block) (note 1) (note 1) Non-volatile bit Non-volatile bit 35 bit1 bit0 WEL WIP (write enable (write in latch) progress bit) 1=write 1=write enable operation 0=not write 0=not in write enable operation volatile bit volatile bit REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Configuration Register The Configuration Register is able to change the default status of Flash memory. Flash memory will be configured after the CR bit is set. ODS bit The output driver strength (ODS2, ODS1, ODS0) bits are volatile bits, which indicate the output driver level (as defined in Output Driver Strength Table) of the device. The Output Driver Strength is defaulted as 30 Ohms when delivered from factory. To write the ODS bits requires the Write Status Register (WRSR) instruction to be executed. TB bit The Top/Bottom (TB) bit is a non-volatile OTP bit. The Top/Bottom (TB) bit is used to configure the Block Protect area by BP bit (BP3, BP2, BP1, BP0), starting from TOP or Bottom of the memory array. The TB bit is defaulted as “0”, which means Top area protect. When it is set as “1”, the protect area will change to Bottom area of the memory device. To write the TB bits requires the Write Status Register (WRSR) instruction to be executed. PBE bit The Preamble Bit Enable (PBE) bit is a volatile bit. It is used to enable or disable the preamble bit data pattern output on dummy cycles. The PBE bit is defaulted as “0”, which means preamble bit is disabled. When it is set as “1”, the preamble bit will be enabled, and inputted into dummy cycles. To write the PBE bits requires the Write Status Register (WRSR) instruction to be executed. 4BYTE Indicator bit By writing EN4B instruction, the 4BYTE bit may be set as "1" to access the address length of 32-bit for memory area of higher density (large than 128Mb). The default state is "0" as the 24-bit address mode. The 4BYTE bit may be cleared by power-off or writing EX4B instruction to reset the state to be "0". Configuration Register bit7 DC1 (Dummy cycle 1) bit6 DC0 (Dummy cycle 0) (note 2) (note 2) volatile bit volatile bit bit5 4 BYTE 0=3-byte address mode 1=4-byte address mode (Default=0) volatile bit bit4 bit3 bit2 bit1 bit0 PBE TB ODS 2 ODS 1 ODS 0 (Preamble bit (top/bottom (output driver (output driver (output driver Enable) selected) strength) strength) strength) 0=Disable 1=Enable 0=Top area protect 1=Bottom area protect (Default=0) (note 1) (note 1) (note 1) OTP volatile bit volatile bit volatile bit volatile bit Note 1: see "Output Driver Strength Table" Note 2: see "Dummy Cycle and Frequency Table (MHz)" P/N: PM2006 36 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Output Driver Strength Table ODS2 0 0 0 0 1 1 1 1 ODS1 0 0 1 1 0 0 1 1 ODS0 0 1 0 1 0 1 0 1 Description Reserved 90 Ohms 60 Ohms 45 Ohms Reserved 20 Ohms 15 Ohms 30 Ohms (Default) Note Impedance at VCC/2 Dummy Cycle and Frequency Table (MHz) DC[1:0] 00 (default) 01 10 11 DC[1:0] 00 (default) 01 10 11 DC[1:0] 00 (default) 01 10 11 P/N: PM2006 Numbers of Dummy clock cycles 8 6 8 10 Numbers of Dummy clock cycles 4 6 8 10 Numbers of Dummy clock cycles 6 4 8 10 Fast Read Dual Output Fast Read Quad Output Fast Read Fast DTR Read 133 133 133 166 133 133 133 166 133 104 133 166 66 66 66 83 Dual IO Fast Read Dual I/O DTR 84 104 133 166 52 66 66 83 Quad IO Fast Read Quad I/O DTR Read 84 70 104 133 52 42 66 83 Read 37 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-9. Write Status Register (WRSR) The WRSR instruction is for changing the values of Status Register Bits and Configuration Register Bits. Before sending WRSR instruction, the Write Enable (WREN) instruction must be decoded and executed to set the Write Enable Latch (WEL) bit in advance. The WRSR instruction can change the value of Block Protect (BP3, BP2, BP1, BP0) bits to define the protected area of memory (as shown in Table 2). The WRSR also can set or reset the Quad enable (QE) bit and set or reset the Status Register Write Disable (SRWD) bit in accordance with Write Protection (WP#/ SIO2) pin signal, but has no effect on bit1(WEL) and bit0 (WIP) of the status register. The WRSR instruction cannot be executed once the Hardware Protected Mode (HPM) is entered. The sequence of issuing WRSR instruction is: CS# goes low→ sending WRSR instruction code→ Status Register data on SI→CS# goes high. The CS# must go high exactly at the 8 bits or 16 bits data boundary; otherwise, the instruction will be rejected and not executed. The self-timed Write Status Register cycle time (tW) is initiated as soon as Chip Select (CS#) goes high. The Write in Progress (WIP) bit still can be check out during the Write Status Register cycle is in progress. The WIP sets 1 during the tW timing, and sets 0 when Write Status Register Cycle is completed, and the Write Enable Latch (WEL) bit is reset. Figure 27. Write Status Register (WRSR) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 SCLK Mode 0 SI SO command 01h Status Register In 7 6 4 5 Configuration Register In 2 3 0 15 14 13 12 11 10 9 1 8 MSB High-Z Note : The CS# must go high exactly at 8 bits or 16 bits data boundary to completed the write register command. Figure 28. Write Status Register (WRSR) Sequence (QPI Mode) CS# Mode 3 0 1 2 3 4 5 Mode 3 SCLK Mode 0 Mode 0 SR in Command SIO[3:0] P/N: PM2006 01h H0 38 L0 CR in H1 L1 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Software Protected Mode (SPM): - When SRWD bit=0, no matter WP#/SIO2 is low or high, the WREN instruction may set the WEL bit and can change the values of SRWD, BP3, BP2, BP1, BP0. The protected area, which is defined by BP3, BP2, BP1, BP0 and T/B bit, is at software protected mode (SPM). - When SRWD bit=1 and WP#/SIO2 is high, the WREN instruction may set the WEL bit can change the values of SRWD, BP3, BP2, BP1, BP0. The protected area, which is defined by BP3, BP2, BP1, BP0 and T/B bit, is at software protected mode (SPM) Note: If SRWD bit=1 but WP#/SIO2 is low, it is impossible to write the Status Register even if the WEL bit has previously been set. It is rejected to write the Status Register and not be executed. Hardware Protected Mode (HPM): - When SRWD bit=1, and then WP#/SIO2 is low (or WP#/SIO2 is low before SRWD bit=1), it enters the hardware protected mode (HPM). The data of the protected area is protected by software protected mode by BP3, BP2, BP1, BP0 and T/B bit and hardware protected mode by the WP#/SIO2 to against data modification. Note: To exit the hardware protected mode requires WP#/SIO2 driving high once the hardware protected mode is entered. If the WP#/SIO2 pin is permanently connected to high, the hardware protected mode can never be entered; only can use software protected mode via BP3, BP2, BP1, BP0 and T/B bit. If the system enter QPI or set QE=1, the feature of HPM will be disabled. Table 7. Protection Modes Mode Software protection mode (SPM) Hardware protection mode (HPM) Status register condition WP# and SRWD bit status Memory Status register can be written in (WEL bit is set to "1") and the SRWD, BP0-BP3 bits can be changed WP#=1 and SRWD bit=0, or WP#=0 and SRWD bit=0, or WP#=1 and SRWD=1 The protected area cannot be program or erase. The SRWD, BP0-BP3 of status register bits cannot be changed WP#=0, SRWD bit=1 The protected area cannot be program or erase. Note: 1. As defined by the values in the Block Protect (BP3, BP2, BP1, BP0) bits of the Status Register, as shown in Table 2. P/N: PM2006 39 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Figure 29. WRSR flow start WREN command RDSR command WEL=1? No Yes WRSR command Write status register data RDSR command WIP=0? No Yes RDSR command Read WEL=0, BP[3:0], QE, and SRWD data Verify OK? No Yes WRSR successfully P/N: PM2006 WRSR fail 40 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Figure 30. WP# Setup Timing and Hold Timing during WRSR when SRWD=1 WP# tSHWL tWHSL CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCLK 01h SI SO High-Z Note: WP# must be kept high until the embedded operation finish. P/N: PM2006 41 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-10. Enter 4-byte mode (EN4B) The EN4B instruction enables accessing the address length of 32-bit for the memory area of higher density (larger than 128Mb). The device default is in 24-bit address mode; after sending out the EN4B instruction, the bit5 (4BYTE bit) of security register will be automatically set to "1" to indicate the 4-byte address mode has been enabled. Once the 4-byte address mode is enabled, the address length becomes 32-bit instead of the default 24-bit. There are three methods to exit the 4-byte mode: writing exit 4-byte mode (EX4B) instruction, Reset or power-off. All instructions are accepted normally, and just the address bit is changed from 24-bit to 32-bit. The following command don't support 4bye address: RDSFDP, RES and REMS. The sequence of issuing EN4B instruction is: CS# goes low → sending EN4B instruction to enter 4-byte mode( automatically set 4BYTE bit as "1") → CS# goes high. 9-11. Exit 4-byte mode (EX4B) The EX4B instruction is executed to exit the 4-byte address mode and return to the default 3-bytes address mode. After sending out the EX4B instruction, the bit5 (4BYTE bit) of Configuration register will be cleared to be "0" to indicate the exit of the 4-byte address mode. Once exiting the 4-byte address mode, the address length will return to 24-bit. The sequence of issuing EX4B instruction is: CS# goes low → sending EX4B instruction to exit 4-byte mode (automatically clear the 4BYTE bit to be "0") → CS# goes high. P/N: PM2006 42 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-12. Read Data Bytes (READ) The read instruction is for reading data out. The address is latched on rising edge of SCLK, and data shifts out on the falling edge of SCLK at a maximum frequency fR. The first address byte can be at any location. The address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single READ instruction. The address counter rolls over to 0 when the highest address has been reached. The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the 4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B) Mode section. The sequence of issuing READ instruction is: CS# goes low→sending READ instruction code→ 3-byte or 4-byte address on SI→ data out on SO→to end READ operation can use CS# to high at any time during data out. Figure 31. Read Data Bytes (READ) Sequence (SPI Mode only) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39 SCLK Mode 0 SI command 03h 24-Bit Address (Note) 23 22 21 3 2 1 0 MSB SO Data Out 1 High-Z 7 6 5 4 3 2 Data Out 2 1 0 7 MSB Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. P/N: PM2006 43 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-13. Read Data Bytes at Higher Speed (FAST_READ) The FAST_READ instruction is for quickly reading data out. The address is latched on rising edge of SCLK, and data of each bit shifts out on the falling edge of SCLK at a maximum frequency fC. The first address byte can be at any location. The address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single FAST_READ instruction. The address counter rolls over to 0 when the highest address has been reached. The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the 4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B) Mode section. Read on SPI Mode The sequence of issuing FAST_READ instruction is: CS# goes low→ sending FAST_READ instruction code→ 3-byte or 4-byte address on SI→ 8 dummy cycles (default)→ data out on SO→ to end FAST_ READ operation can use CS# to high at any time during data out. While Program/Erase/Write Status Register cycle is in progress, FAST_READ instruction is rejected without any impact on the Program/Erase/Write Status Register current cycle. Figure 32. Read at Higher Speed (FAST_READ) Sequence (SPI Mode) CS# SCLK Mode 3 0 1 2 Mode 0 3 5 6 7 8 9 10 Command SI SO 4 28 29 30 31 24-Bit Address (Note) 23 22 21 0Bh 3 2 1 0 High-Z CS# 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCLK Configurable Dummy Cycle SI 7 6 5 4 3 2 1 0 DATA OUT 2 DATA OUT 1 SO 7 6 5 4 3 2 1 0 7 MSB MSB 6 5 4 3 2 1 0 7 MSB Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. P/N: PM2006 44 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-14. Dual Output Read Mode (DREAD) The DREAD instruction enable double throughput of Serial Flash in read mode. The address is latched on rising edge of SCLK, and data of every two bits (interleave on 2 I/O pins) shift out on the falling edge of SCLK at a maximum frequency fT. The first address byte can be at any location. The address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single DREAD instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing DREAD instruction, the following data out will perform as 2-bit instead of previous 1-bit. The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the 4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B) Mode section. The sequence of issuing DREAD instruction is: CS# goes low→ sending DREAD instruction→3-byte or 4-byte address on SIO0→ 8 dummy cycles (default) on SIO0→ data out interleave on SIO1 & SIO0→ to end DREAD operation can use CS# to high at any time during data out. While Program/Erase/Write Status Register cycle is in progress, DREAD instruction is rejected without any impact on the Program/Erase/Write Status Register current cycle. Figure 33. Dual Read Mode Sequence CS# 0 1 2 3 4 5 6 7 8 … Command SI/SIO0 SO/SIO1 30 31 32 9 SCLK 3B … 24 ADD Cycle A23 A22 … 39 40 41 42 43 44 45 A1 A0 High Impedance Configurable Dummy Cycle Data Out 1 Data Out 2 D6 D4 D2 D0 D6 D4 D7 D5 D3 D1 D7 D5 Notes: 1. Please note the above address cycles are base on 3-byte address mode, for 4-byte address mode, the address cycles will be increased. 2. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. P/N: PM2006 45 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-15. 2 x I/O Read Mode (2READ) The 2READ instruction enable double throughput of Serial Flash in read mode. The address is latched on rising edge of SCLK, and data of every two bits (interleave on 2 I/O pins) shift out on the falling edge of SCLK at a maximum frequency fT. The first address byte can be at any location. The address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single 2READ instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing 2READ instruction, the following address/dummy/data out will perform as 2-bit instead of previous 1-bit. The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the 4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B) Mode section. The sequence of issuing 2READ instruction is: CS# goes low→ sending 2READ instruction→ 3-byte or 4-byte address interleave on SIO1 & SIO0→ 4 dummy cycles (default) on SIO1 & SIO0→ data out interleave on SIO1 & SIO0→ to end 2READ operation can use CS# to high at any time during data out. While Program/Erase/Write Status Register cycle is in progress, 2READ instruction is rejected without any impact on the Program/Erase/Write Status Register current cycle. Figure 34. 2 x I/O Read Mode Sequence (SPI Mode only) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 Mode 3 17 18 19 20 21 22 23 24 25 26 27 28 29 30 SCLK Mode 0 Command SI/SIO0 SO/SIO1 BBh 12 ADD Cycles (Note) Configurable Dummy Cycle Data Out 1 Mode 0 Data Out 2 A22 A20 A18 A4 A2 A0 D6 D4 D2 D0 D6 D4 D2 D0 A23 A21 A19 A5 A3 A1 D7 D5 D3 D1 D7 D5 D3 D1 Notes: 1. Please note the above address cycles are base on 3-byte address mode, for 4-byte address mode, the address cycles will be increased. 2. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. P/N: PM2006 46 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-16. Quad Read Mode (QREAD) The QREAD instruction enable quad throughput of Serial Flash in read mode. The address is latched on rising edge of SCLK, and data of every four bits (interleave on 4 I/O pins) shift out on the falling edge of SCLK at a maximum frequency fQ. The first address byte can be at any location. The address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single QREAD instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing QREAD instruction, the following data out will perform as 4-bit instead of previous 1-bit. The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the 4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B) Mode section. The sequence of issuing QREAD instruction is: CS# goes low→ sending QREAD instruction → 3-byte or 4-byte address on SI → 8 dummy cycle (Default) → data out interleave on SO3, SO2, SO1 & SO0→ to end QREAD operation can use CS# to high at any time during data out. While Program/Erase/Write Status Register cycle is in progress, QREAD instruction is rejected without any impact on the Program/Erase/Write Status Register current cycle. Figure 35. Quad Read Mode Sequence CS# 0 1 2 3 4 5 6 7 8 … Command SIO0 SIO1 SIO2 SIO3 29 30 31 32 33 9 SCLK 6B … 24 ADD Cycles A23 A22 … High Impedance 38 39 40 41 42 A2 A1 A0 Configurable dummy cycles Data Data Data Out 1 Out 2 Out 3 D4 D0 D4 D0 D4 D5 D1 D5 D1 D5 High Impedance D6 D2 D6 D2 D6 High Impedance D7 D3 D7 D3 D7 Notes: 1. Please note the above address cycles are base on 3-byte address mode, for 4-byte address mode, the address cycles will be increased. 2. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. P/N: PM2006 47 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-17. 4 x I/O Read Mode (4READ) The 4READ instruction enable quad throughput of Serial Flash in read mode. A Quad Enable (QE) bit of status Register must be set to "1" before sending the 4READ instruction. The address is latched on rising edge of SCLK, and data of every four bits (interleave on 4 I/O pins) shift out on the falling edge of SCLK at a maximum frequency fQ. The first address byte can be at any location. The address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single 4READ instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing 4READ instruction, the following address/dummy/data out will perform as 4-bit instead of previous 1-bit. The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the 4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B) Mode section. 4 x I/O Read on SPI Mode (4READ) The sequence of issuing 4READ instruction is: CS# goes low→ sending 4READ instruction→ 3-byte or 4-byte address interleave on SIO3, SIO2, SIO1 & SIO0→ 6 dummy cycles (Default) →data out interleave on SIO3, SIO2, SIO1 & SIO0→ to end 4READ operation can use CS# to high at any time during data out. 4 x I/O Read on QPI Mode (4READ) The 4READ instruction also support on QPI command mode. The sequence of issuing 4READ instruction QPI mode is: CS# goes low→ sending 4READ instruction→ 3-byte or 4-byte address interleave on SIO3, SIO2, SIO1 & SIO0→ 6 dummy cycles (Default) →data out interleave on SIO3, SIO2, SIO1 & SIO0→ to end 4READ operation can use CS# to high at any time during data out. While Program/Erase/Write Status Register cycle is in progress, 4READ instruction is rejected without any impact on the Program/Erase/Write Status Register current cycle. P/N: PM2006 48 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Figure 36. 4 x I/O Read Mode Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 Mode 3 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 SCLK Mode 0 Command 6 ADD Cycles Data Out 1 Performance enhance indicator (Note 1) Data Out 2 Mode 0 Data Out 3 Configurable Dummy Cycle (Note 3) EA/EBh A20 A16 A12 A8 A4 A0 P4 P0 D4 D0 D4 D0 D4 D0 SIO1 A21 A17 A13 A9 A5 A1 P5 P1 D5 D1 D5 D1 D5 D1 SIO2 A22 A18 A14 A10 A6 A2 P6 P2 D6 D2 D6 D2 D6 D2 SIO3 A23 A19 A15 A11 A7 A3 P7 P3 D7 D3 D7 D3 D7 D3 SIO0 Notes: 1. Hi-impedance is inhibited for the two clock cycles. 2. P7≠P3, P6≠P2, P5≠P1 & P4≠P0 (Toggling) is inhibited. 3. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. 4. Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. Figure 37. 4 x I/O Read Mode Sequence (QPI Mode) CS# MODE 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 MODE 3 SCLK MODE 0 SIO[3:0] MODE 0 EBh Data In A20A23 A16A19 A12A15 A8A11 24-bit Address (Note) A4A7 A0A3 X X X X Configurable Dummy Cycle X X H0 L0 H1 L1 H2 L2 H3 L3 MSB Data Out Notes: 1. Please note the above address cycles are base on 3-byte address mode, for 4-byte address mode, the address cycles will be increased. 2. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. P/N: PM2006 49 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-18. Fast Double Transfer Rate Read (FASTDTRD) The FASTDTRD instruction is for doubling reading data out, signals are triggered on both rising and falling edge of clock. The address is latched on both rising and falling edge of SCLK, and data of each bit shifts out on both rising and falling edge of SCLK. The 2-bit address can be latched-in at one clock, and 2-bit data can be read out at one clock, which means one bit at rising edge of clock, the other bit at falling edge of clock. The first address byte can be at any location. The address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single FASTDTRD instruction. The address counter rolls over to 0 when the highest address has been reached. The sequence of issuing FASTDTRD instruction is: CS# goes low → sending FASTDTRD instruction code (1bit per clock) → 3-byte address on SI (2-bit per clock) → 6-dummy clocks (default) on SI → data out on SO (2-bit per clock) → to end FASTDTRD operation can use CS# to high at any time during data out. While Program/Erase/Write Status Register cycle is in progress, FASTDTRD instruction is rejected without any impact on the Program/Erase/Write Status Register current cycle. Figure 38. Fast DT Read (FASTDTRD) Sequence (SPI Only) CS# Mode 3 SCLK Mode 0 7 0 … Command SI/SIO0 8 0Dh … … 28 29 30 31 … Configurable Dummy Cycle 12 ADD Cycles A23 A22 27 19 Data Out 1 Data Out 2 A1 A0 D7 D6 D5 D4 D3 D2 D1 D0 D7 SO/SIO1 Notes: 1. Please note the above address cycles are base on 3-byte address mode, for 4-byte address mode, the address cycles will be increased. 2. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. P/N: PM2006 50 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-19. 2 x I/O Double Transfer Rate Read Mode (2DTRD) The 2DTRD instruction enables Double Transfer Rate throughput on dual I/O of Serial Flash in read mode. The address (interleave on dual I/O pins) is latched on both rising and falling edge of SCLK, and data (interleave on dual I/O pins) shift out on both rising and falling edge of SCLK. The 4-bit address can be latched-in at one clock, and 4-bit data can be read out at one clock, which means two bits at rising edge of clock, the other two bits at falling edge of clock. The first address byte can be at any location. The address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single 2DTRD instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing 2DTRD instruction, the following address/dummy/ data out will perform as 4-bit instead of previous 1-bit. The sequence of issuing 2DTRD instruction is: CS# goes low → sending 2DTRD instruction (1-bit per clock) → 24bit address interleave on SIO1 & SIO0 (4-bit per clock) → 6-bit dummy clocks (Default) on SIO1 & SIO0 → data out interleave on SIO1 & SIO0 (4-bit per clock) → to end 2DTRD operation can use CS# to high at any time during data out. While Program/Erase/Write Status Register cycle is in progress, 2DTRD instruction is rejected without any impact on the Program/Erase/Write Status Register current cycle. Figure 39. Fast Dual I/O DT Read (2DTRD) Sequence (SPI Only) CS# Mode 3 SCLK Mode 0 SI/SIO0 SO/SIO1 0 7 8 13 … … Command 6 ADD Cycles BDh 14 17 18 19 20 21 … Configurable Dummy Cycle Data Out 1 Data Out 2 … A22 A20 … A2 A0 D6 D4 D2 D0 D6 D4 D2 D0 D6 A23 A21 … A3 A1 D7 D5 D3 D1 D7 D5 D3 D1 D7 Notes: 1. Please note the above address cycles are base on 3-byte address mode, for 4-byte address mode, the address cycles will be increased. 2. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. P/N: PM2006 51 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-20. 4 x I/O Double Transfer Rate Read Mode (4DTRD) The 4DTRD instruction enables Double Transfer Rate throughput on quad I/O of Serial Flash in read mode. A Quad Enable (QE) bit of status Register must be set to "1" before sending the 4DTRD instruction. The address (interleave on 4 I/O pins) is latched on both rising and falling edge of SCLK, and data (interleave on 4 I/O pins) shift out on both rising and falling edge of SCLK. The 8-bit address can be latched-in at one clock, and 8-bit data can be read out at one clock, which means four bits at rising edge of clock, the other four bits at falling edge of clock. The first address byte can be at any location. The address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single 4DTRD instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing 4DTRD instruction, the following address/ dummy/data out will perform as 8-bit instead of previous 1-bit. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. While Program/Erase/Write Status Register cycle is in progress, 4DTRD instruction is rejected without any impact on the Program/Erase/Write Status Register current cycle. P/N: PM2006 52 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Figure 40. Fast Quad I/O DT Read (4DTRD) Sequence (SPI Mode) CS# Mode 3 0 7 SCLK 8 9 10 11 16 … Mode 0 17 18 … Command Performance Enhance Indicator 3 ADD Cycles Configurable Dummy Cycle A20 A16 … A4 A0 P4 P0 D4 D0 D4 D0 D4 SIO1 A21 A17 … A5 A1 P5 P1 D5 D1 D5 D1 D5 SIO2 A22 A18 … A6 A2 P6 P2 D6 D2 D6 D2 D6 SIO3 A23 A19 … A7 A3 P7 P3 D7 D3 D7 D3 D7 SIO0 EDh Notes: 1. Hi-impedance is inhibited for this clock cycle. 2. P7≠P3, P6≠P2, P5≠P1 & P4≠P0 (Toggling) will result in entering the performance enhance mode. 3. Configuration Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in configuration register. 4. Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. Figure 41. Fast Quad I/O DT Read (4DTRD) Sequence (QPI Mode) CS# Mode 3 0 1 2 3 4 5 11 10 SCLK 12 … Mode 0 Command 3 ADD Cycles Performance Enhance Indicator Configurable Dummy Cycle SIO[3:0] EDh A20 | A23 A16 | A19 A12 | A15 A8 | A11 A4 | A7 A0 | A3 P1 P0 H0 L0 H1 L1 H2 Notes: 1. Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. 2. Configuration Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in configuration register. P/N: PM2006 53 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-21. Preamble Bit The Preamble Bit data pattern supports system/memory controller to determine valid window of data output more easily and improve data capture reliability while the flash memory is running in high frequency. Preamble Bit data pattern can be enabled or disabled by setting the bit4 of Configuration register (Preamble bit Enable bit). Once the CR<4> is set, the preamble bit is inputted into dummy cycles. Enabling preamble bit will not affect the function of enhance mode bit. In Dummy cycles, performance enhance mode bit still operates with the same function. Preamble bit will output after performance enhance mode bit. The preamble bit is a fixed 8-bit data pattern (00110100). While dummy cycle number reaches 10, the complete 8 bits will start to output right after the performance enhance mode bit. While dummy cycle is not sufficient of 10 cycles, the rest of the preamble bits will be cut. For example, 8 dummy cycles will cause 6 preamble bits to output, and 6 dummy cycles will cause 4 preamble bits to output. Figure 42. SDR 1I/O (10DC) CS# SCK … … Dummy cycle Command cycle SI CMD Address cycle An … Preamble bits A0 SO 7 6 5 4 3 2 1 0 D7 D6 D7 D6 … Figure 43. SDR 1I/O (8DC) CS# SCK … … Dummy cycle Command cycle SI SO P/N: PM2006 CMD Address cycle An … Preamble bits A0 7 54 6 5 4 3 2 D5 D4 … REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Figure 44. SDR 2I/O (10DC) CS# SCK … … Dummy cycle Command cycle SIO0 CMD SIO1 Address cycle Toggle bits Preamble bits A(n-1) … A0 7 6 5 4 3 2 1 0 D6 D4 D2 D0 An … A1 7 6 5 4 3 2 1 0 D7 D5 D3 D1 … … Figure 45. SDR 2I/O (8DC) CS# SCK … … Dummy cycle Command cycle SIO0 SIO1 P/N: PM2006 CMD Address cycle Toggle bits Preamble bits A(n-1) … A0 7 6 5 4 3 2 D6 D4 D2 D0 An … A1 7 6 5 4 3 2 D7 D5 D3 D1 55 … … REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Figure 46. SDR 4I/O (10DC) CS# SCK … … Dummy cycle Command cycle Toggle bits Address cycle Preamble bits A(n-3) … A0 7 6 5 4 3 2 1 0 D4 D0 SIO1 A(n-2) … A1 7 6 5 4 3 2 1 0 D5 D1 SIO2 A(n-1) … A2 7 6 5 4 3 2 1 0 D6 D2 … SIO3 An … A3 7 6 5 4 3 2 1 0 D7 D3 … SIO0 CMD … … Figure 47. SDR 4I/O (8DC) CS# SCK … … Dummy cycle Command cycle Address cycle Toggle bits Preamble bits A(n-3) … A0 7 6 5 4 3 2 D4 D0 SIO1 A(n-2) … A1 7 6 5 4 3 2 D5 D1 SIO2 A(n-1) … A2 7 6 5 4 3 2 D6 D2 SIO3 An … A3 7 6 5 4 3 2 D7 D3 SIO0 P/N: PM2006 CMD 56 … … … … REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Figure 48. DTR1IO (DC=8) CS# SCK … … Dummy cycle Command cycle SI CMD Preamble bits Address cycle … An A1 A0 7 6 5 4 3 2 1 0 7 6 5 4 D7 D6 D5 D4 D3 D2 D1 D0 SO … Figure 49. DTR2IO (DC=6) CS# SCK … … Dummy cycle Command cycle SIO0 Address cycle CMD Toggle Bits Preamble bits … A2 A0 7 6 5 4 3 2 1 0 D6 D4 D2 D0 D6 D4 D2 D0 … … A3 A1 7 6 5 4 3 2 1 0 D7 D5 D3 D1 D7 D5 D3 D1 … A(n-1) SIO1 An P/N: PM2006 57 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Figure 50. DTR2IO (DC=8) CS# SCK … … Dummy cycle Command cycle SIO0 Address cycle CMD Learning pattern Toggle Bits … A2 A0 7 6 5 4 3 2 1 0 7 6 5 4 D6 D4 D2 D0 D6 D4 … … A3 A1 7 6 5 4 3 2 1 0 7 6 5 4 D7 D5 D3 D1 D7 D5 … A(n-1) SIO1 An Figure 51. DTR4IO (DC=6) CS# SCK … … Dummy cycle Command cycle SIO0 Address cycle CMD Toggle Bits Learning pattern … A0 7 6 5 4 3 2 1 0 D4 D0 D4 D0 D4 D0 D4 D0 … … A1 7 6 5 4 3 2 1 0 D5 D1 D5 D1 D5 D1 D5 D1 … … A2 7 6 5 4 3 2 1 0 D6 D2 D6 D2 D6 D2 D6 D2 … … A3 7 6 5 4 3 2 1 0 D7 D3 D7 D3 D7 D3 D7 D3 … A(n-3) SIO1 A(n-2) SIO2 A(n-1) SIO3 An P/N: PM2006 58 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-22. 4 Byte Address Command Set The operation of 4-byte address command set was very similar to original 3-byte address command set. The only different is all the 4-byte command set request 4-byte address (A31-A0) followed by instruction code. The command set support 4-byte address including: READ4B, Fast_Read4B, DREAD4B, 2READ4B, QREAD4B, 4READ4B, FRDTRD4B, 2DTRD4B, 4DTRD4B, PP4B, 4PP4B, SE4B, BE32K4B, BE4B. Please note that it is not necessary to issue EN4B command before issuing any of 4-byte command set. Figure 52. Read Data Bytes using 4 Byte Address Sequence (READ4B) CS# 0 1 2 3 4 5 6 7 8 36 37 38 39 40 41 42 43 44 45 46 47 9 10 SCLK Command 32-bit address 31 30 29 13h SI 3 2 1 0 MSB Data Out 1 High Impedance SO 7 6 5 4 Data Out 2 2 3 1 0 7 MSB Figure 53. Read Data Bytes at Higher Speed using 4 Byte Address Sequence (FASTREAD4B) CS# 0 1 2 3 4 5 6 7 8 9 10 36 37 38 39 SCLK Command 32-bit address 31 30 29 0Ch SI 3 2 1 0 High Impedance SO CS# 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 SCLK Configurable Dummy cycles SI 7 6 5 4 3 2 1 0 DATA OUT 2 DATA OUT 1 SO 7 6 5 4 MSB 3 2 1 0 7 6 MSB 5 4 3 2 1 0 7 MSB Note: 1. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. P/N: PM2006 59 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Figure 54. 2 x I/O Fast Read using 4 Byte Address Sequence (2READ4B) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 21 22 23 24 25 26 27 28 29 30 31 32 33 34 Mode 3 SCLK Mode 0 BCh SI/SIO0 SO/SIO1 Data Out 1 Configurable Dummy Cycle 16 ADD Cycles Command Data Out 2 A30 A28 A26 A4 A2 A0 D6 D4 D2 D0 D6 D4 D2 D0 A31 A29 A27 A5 A3 A1 D7 D5 D3 D1 D7 D5 D3 D1 Mode 0 Note: 1. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. Figure 55. 4 I/O Fast Read using 4 Byte Address sequence (4READ4B) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 Mode 3 SCLK Mode 0 Command 8 ADD Cycles Performance enhance indicator Data Out 1 Data Out 2 Data Out 3 Mode 0 Configurable Dummy Cycle SIO0 ECh A28 A24 A20 A16 A12 A8 A4 A0 P4 P0 D4 D0 D4 D0 D4 D0 SIO1 A29 A25 A21 A17 A13 A9 A5 A1 P5 P1 D5 D1 D5 D1 D5 D1 SIO2 A30 A26 A22 A18 A14 A10 A6 A2 P6 P2 D6 D2 D6 D2 D6 D2 SIO3 A31 A27 A23 A19 A15 A11 A7 A3 P7 P3 D7 D3 D7 D3 D7 D3 Note: 1. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. P/N: PM2006 60 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Figure 56. Fast DT Read (FRDTRD4B) Sequence (SPI Only) CS# Mode 3 SCLK 8 7 0 … Mode 0 … Command … A31 A30 32 33 34 35 … Configurable Dummy Cycle 16 ADD Cycles 0Eh SI/SIO0 31 23 Data Out 2 Data Out 1 A1 A0 D7 D6 D5 D4 D3 D2 D1 D0 D7 SO/SIO1 Note: 1. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. Figure 57. Fast Dual I/O DT Read (2DTRD4B) Sequence (SPI Only) CS# Mode 3 SCLK Mode 0 0 7 … Command SI/SIO0 SO/SIO1 8 BEh 15 16 … 19 20 21 22 23 … Configurable Dummy Cycle 8 ADD Cycles Data Out 1 Data Out 2 … A30 A28 … A2 A0 D6 D4 D2 D0 D6 D4 D2 D0 A31 A29 … A3 D7 D5 D3 D1 D7 D5 D3 D1 D7 A1 D6 Note: 1. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. P/N: PM2006 61 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Figure 58. Fast Quad I/O DT Read (4DTRD4B) Sequence (SPI Mode) CS# Mode 3 0 7 SCLK 8 9 10 11 12 17 … Mode 0 18 19 … Command Performance Enhance Indicator 4 ADD Cycles Configurable Dummy Cycle A28 A24 … A4 A0 P4 P0 D4 D0 D4 D0 D4 SIO1 A29 A25 … A5 A1 P5 P1 D5 D1 D5 D1 D5 SIO2 A30 A26 … A6 A2 P6 P2 D6 D2 D6 D2 D6 SIO3 A31 A27 … A7 A3 P7 P3 D7 D3 D7 D3 D7 SIO0 EEh Note: 1. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. Figure 59. Fast Quad I/O DT Read (4DTRD4B) Sequence (QPI Mode) CS# Mode 3 0 1 2 4 3 5 6 12 11 SCLK 13 … Mode 0 Command 4 ADD Cycles Performance Enhance Indicator Configurable Dummy Cycle SIO[3:0] EEh A28 | A31 A24 | A27 A20 | A23 A16 | A19 A12 | A15 A8 | A11 A4 | A7 A0 | A3 P1 P0 H0 L0 H1 L1 H2 Note: 1. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. P/N: PM2006 62 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Figure 60. Sector Erase (SE4B) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 37 38 39 9 SCLK Mode 0 32-Bit Address Command SI 31 30 21h 2 1 0 MSB Figure 61. Block Erase 32KB (BE32K4B) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 37 38 39 SCLK Mode 0 Command SI 32-Bit Address 2 31 30 5Ch 1 0 MSB Figure 62. Block Erase (BE4B) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 37 38 39 SCLK Mode 0 SI Command 32-Bit Address 31 30 DCh 2 1 0 MSB P/N: PM2006 63 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Figure 63. Page Program (PP4B) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 36 37 38 39 40 41 42 43 44 45 46 47 SCLK 1 0 7 6 5 3 2 1 0 2087 2 2086 3 2085 31 30 29 12h SI Data Byte 1 32-Bit Address 2084 Command 2083 Mode 0 4 1 0 MSB MSB 2082 2081 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 2080 CS# SCLK Data Byte 2 7 SI 6 5 4 3 Data Byte 3 2 1 0 MSB 7 6 5 4 3 2 Data Byte 256 1 0 MSB 7 6 5 4 3 2 MSB Figure 64. 4 x I/O Page Program (4PP4B) Sequence (SPI Mode only) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 SCLK Mode 0 Data Data Data Data Byte 2 Byte 3 Byte 4 Byte 4 8 Address cycle A0 4 0 4 0 4 0 4 0 SIO1 A29 A25 A21 A17 A13 A9 A5 A1 5 1 5 1 5 1 5 1 SIO2 A30 A26 A22 A18 A14 A10 A6 A2 6 2 6 2 6 2 6 2 SIO3 A31 A27 A23 A19 A15 A11 A7 A3 7 3 7 3 7 3 7 3 SIO0 P/N: PM2006 Command 3Eh A28 A24 A20 A16 A12 A8 A4 64 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-23. Performance Enhance Mode The device could waive the command cycle bits if the two cycle bits after address cycle toggles. Performance enhance mode is supported in both SPI and QPI mode. In QPI mode, “EBh” "ECh" "EDh" "EEh" and SPI “EBh” "ECh" "EDh" "EEh" commands support enhance mode. The performance enhance mode is not supported in dual I/O mode. To enter performance-enhancing mode, P[7:4] must be toggling with P[3:0]; likewise P[7:0]=A5h, 5Ah, F0h or 0Fh can make this mode continue and skip the next 4READ instruction. To leave enhance mode, P[7:4] is no longer toggling with P[3:0]; likewise P[7:0]=FFh, 00h, AAh or 55h along with CS# is afterwards raised and then lowered. Issuing ”FFh” data cycle can also exit enhance mode. The system then will leave performance enhance mode and return to normal operation. After entering enhance mode, following CS# go high, the device will stay in the read mode and treat CS# go low of the first clock as address instead of command cycle. Another sequence of issuing 4READ instruction especially useful in random access is : CS# goes low→sending 4 READ instruction→3-bytes or 4-bytes address interleave on SIO3, SIO2, SIO1 & SIO0 →performance enhance toggling bit P[7:0]→ 4 dummy cycles (Default) →data out still CS# goes high → CS# goes low (reduce 4 Read instruction) → 3-bytes or 4-bytes random access address. P/N: PM2006 65 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Figure 65. 4 x I/O Read enhance performance Mode Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 n SCLK Mode 0 Data Out 2 Data Out n A20 A16 A12 A8 A4 A0 P4 P0 D4 D0 D4 D0 D4 D0 SIO1 A21 A17 A13 A9 A5 A1 P5 P1 D5 D1 D5 D1 D5 D1 SIO2 A22 A18 A14 A10 A6 A2 P6 P2 D6 D2 D6 D2 D6 D2 SIO3 A23 A19 A15 A11 A7 A3 P7 P3 D7 D3 D7 D3 D7 D3 Command 6 ADD Cycles (Note 2) Data Out 1 Performance enhance indicator (Note 1) Configurable Dummy Cycle (Note 2) EBh SIO0 CS# n+1 ........... n+7 ...... n+9 ........... n+13 ........... Mode 3 SCLK 6 ADD Cycles (Note 2) Performance enhance indicator (Note 1) Data Out 1 Data Out 2 Data Out n Mode 0 Configurable Dummy Cycle (Note 2) SIO0 A20 A16 A12 A8 A4 A0 P4 P0 D4 D0 D4 D0 D4 D0 SIO1 A21 A17 A13 A9 A5 A1 P5 P1 D5 D1 D5 D1 D5 D1 SIO2 A22 A18 A14 A10 A6 A2 P6 P2 D6 D2 D6 D2 D6 D2 SIO3 A23 A19 A15 A11 A7 A3 P7 P3 D7 D3 D7 D3 D7 D3 Notes: 1. If not using performance enhance recommend to keep 1 or 0 in performance enhance indicator. 2. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. 3. Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. P/N: PM2006 66 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Figure 66. 4 x I/O Read enhance performance Mode Sequence (QPI Mode) CS# Mode 3 0 1 2 3 4 A20A23 A16A19 A12A15 5 6 7 A4A7 A0A3 8 9 10 11 12 13 14 15 16 17 H0 L0 H1 L1 SCLK Mode 0 SIO[3:0] EBh A8A11 X X X X MSB LSB MSB LSB P(7:4) P(3:0) Data In Data Out performance enhance indicator Configurable Dummy Cycle (Note 1) CS# n+1 ............. SCLK Mode 0 SIO[3:0] A20A23 A16A19 A12A15 A8A11 A4A7 A0A3 X X X 6 Address cycles (Note) X H0 L0 H1 L1 MSB LSB MSB LSB P(7:4) P(3:0) Data Out performance enhance indicator Configurable Dummy Cycle (Note 1) Notes: 1. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. 2. Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. P/N: PM2006 67 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Figure 67. 4 x I/O DT Read enhance performance Mode Sequence (SPI Mode) CS# Mode 3 SCLK Mode 0 0 7 8 9 10 11 16 … 17 18 … Command n … Performance Enhance Indicator 3 ADD Cycles Configurable Dummy Cycle A20 A16 … A4 A0 P4 P0 D4 D0 D4 D0 … D4 D0 SIO1 A21 A17 … A5 A1 P5 P1 D5 D1 D5 D1 … D5 D1 SIO2 A22 A18 … A6 A2 P6 P2 D6 D2 D6 D2 … D6 D2 SIO3 A23 A19 … A7 A3 P7 P3 D7 D3 D7 D3 … D7 D3 SIO0 EDh CS# n+1 …… n+4 Mode 3 SCLK … 3 ADD Cycles Mode 0 Performance Enhance Indicator Configurable Dummy Cycle SIO0 A20 A16 … A4 A0 P4 P0 D4 D0 D4 D0 SIO1 A21 A17 … A5 A1 P5 P1 D5 D1 D5 D1 SIO2 A22 A18 … A6 A2 P6 P2 D6 D2 D6 D2 SIO3 A23 A19 … A7 A3 P7 P3 D7 D3 D7 D3 Notes: 1. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. 2. Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. P/N: PM2006 68 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Figure 68. 4 x I/O DT Read enhance performance Mode Sequence (QPI Mode) CS# Mode 3 0 1 2 3 4 5 10 SCLK 11 12 … Mode 0 Command 3 ADD Cycles n … Performance Enhance Indicator Configurable Dummy Cycle SIO[3:0] A20 | A23 EDh A16 | A19 A12 | A15 A8 | A11 A0 | A3 A4 | A7 P1 P0 H0 L0 H1 L1 … Hn Ln CS# … n+1 … n+4 SCLK Mode 3 … 3 ADD Cycles Mode 0 Performance Enhance Indicator Configurable Dummy Cycle SIO[3:0] A20 | A23 A16 | A19 A12 | A15 A8 | A11 A4 | A7 A0 | A3 P1 P0 H0 L0 H1 L1 Notes: 1. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. 2. Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. P/N: PM2006 69 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-24. Performance Enhance Mode Reset To conduct the Performance Enhance Mode Reset operation in SPI mode, FFh data cycle(8 clocks in 3-byte address mode)/3FFh data cycle(10 clocks in 4-byte address mode), should be issued in 1I/O sequence. In QPI Mode, FFFFFFFFh data cycle(8 clocks in 3-byte address mode)/FFFFFFFFFFh data cycle (10 clocks in 4-byte address mode), in 4I/O should be issued. If the system controller is being Reset during operation, the flash device will return to the standard SPI operation. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. Figure 69. Performance Enhance Mode Reset for Fast Read Quad I/O (SPI Mode) Mode Bit Reset for Quad I/O CS# Mode 3 SCLK 0 1 2 3 4 5 6 Mode 3 7 Mode 0 Mode 0 SIO0 FFh SIO1 Don’t Care SIO2 Don’t Care SIO3 Don’t Care Figure 70. Performance Enhance Mode Reset for Fast Read Quad I/O (QPI Mode) Mode Bit Reset for Quad I/O CS# Mode 3 SCLK SIO[3:0] P/N: PM2006 0 1 2 3 4 5 6 Mode 0 7 Mode 3 Mode 0 FFFFFFFFh 70 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Figure 71. Performance Enhance Mode Reset for Fast Read Quad I/O using 4Byte Address Sequence (SPI Mode) Mode Bit Reset for Quad I/O CS# Mode 3 SCLK 0 1 2 3 4 5 6 7 8 Mode 3 9 Mode 0 Mode 0 SIO0 3FFh SIO1 Don’t Care SIO2 Don’t Care SIO3 Don’t Care Figure 72. Performance Enhance Mode Reset for Fast Read Quad I/O using 4Byte Address Sequence (QPI Mode) Mode Bit Reset for Quad I/O CS# Mode 3 SCLK SIO[3:0] P/N: PM2006 0 1 2 3 4 5 6 7 Mode 0 8 9 Mode 3 Mode 0 FFFFFFFFFFh 71 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-25. Burst Read To set the Burst length, following command operation is required to issue command: “C0h” in the first Byte (8-clocks), following 4 clocks defining wrap around enable with “0h” and disable with“1h”. The next 4 clocks are to define wrap around depth. Their definitions are as the following table: Data 00h 01h 02h 03h 1xh Wrap Around Yes Yes Yes Yes No Wrap Depth 8-byte 16-byte 32-byte 64-byte X The wrap around unit is defined within the 256Byte page, with random initial address. It is defined as “wrap-around mode disable” for the default state of the device. To exit wrap around, it is required to issue another “C0” command in which data=‘1xh”. Otherwise, wrap around status will be retained until power down or reset command. To change wrap around depth, it is requried to issue another “C0” command in which data=“0xh”. QPI “EBh” "ECh" and SPI “EBh” "ECh" support wrap around feature after wrap around is enabled. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. Figure 73. SPI Mode CS# Mode 3 0 1 2 3 4 5 6 7 8 9 D7 D6 10 11 12 13 14 15 SCLK Mode 0 SIO C0h D5 D4 D3 D2 D1 D0 Figure 74. QPI Mode CS# Mode 3 0 1 2 3 SCLK Mode 0 SIO[3:0] C0h H0 MSB L0 LSB Note: MSB=Most Significant Bit LSB=Least Significant Bit P/N: PM2006 72 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-26. Fast Boot The Fast Boot Feature provides the ability to automatically execute read operation after power on cycle or reset without any read instruction. A Fast Boot Register is provided on this device. It can enable the Fast Boot function and also define the number of delay cycles and start address (where boot code being transferred). Instruction WRFBR (write fast boot register) and ESFBR (erase fast boot register) can be used for the status configuration or alternation of the Fast Boot Register bit. RDFBR (read fast boot register) can be used to verify the program state of the Fast Boot Register. The default number of delay cycles is 13 cycles, and there is a 16bytes boundary address for the start of boot code access. When CS# starts to go low, data begins to output from default address after the delay cycles (default as 13 cycles). After CS# returns to go high, the device will go back to standard SPI mode and user can start to input command. In the fast boot data out process from CS# goes low to CS# goes high, a minimum of one byte must be output. Once Fast Boot feature has been enabled, the device will automatically start a read operation after power on cycle, reset command, or hardware reset operation. The fast Boot feature can support Single I/O and Quad I/O interface. If the QE bit of Status Register is “0”, the data is output by Single I/O interface. If the QE bit of Status Register is set to “1”, the data is output by Quad I/O interface. Fast Boot Register (FBR) Bits 31 to 4 Description FBSA (FastBoot Start Address) 3 x 2 to 1 FBSD (FastBoot Start Delay Cycle) 0 FBE (FastBoot Enable) Bit Status Default State 16 bytes boundary address for the start of boot FFFFFFF code access. 1 00: 7 delay cycles 01: 9 delay cycles 10: 11 delay cycles 11: 13 delay cycles 0=FastBoot is enabled. 1=FastBoot is not enabled. Type NonVolatile NonVolatile 11 NonVolatile 1 NonVolatile Note: If FBSD = 11, the maximum clock frequency is 133 MHz If FBSD = 10, the maximum clock frequency is 104 MHz If FBSD = 01, the maximum clock frequency is 84 MHz If FBSD = 00, the maximum clock frequency is 70 MHz P/N: PM2006 73 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Figure 75. Fast Boot Sequence (QE=0) CS# Mode 3 0 - - - - - - n+1 n+2 n+3 n+4 n+5 n+6 n+7 n+8 n+9 n+10 n+11n+12n+13n+14n+15 n SCLK Mode 0 Delay Cycles Don’t care or High Impedance SI Data Out 1 High Impedance SO 7 6 5 4 3 Data Out 2 2 1 0 MSB 7 6 5 4 3 2 MSB 1 0 7 MSB Note: If FBSD = 11, delay cycles is 13 and n is 12. If FBSD = 10, delay cycles is 11 and n is 10. If FBSD = 01, delay cycles is 9 and n is 8. If FBSD = 00, delay cycles is 7 and n is 6. Figure 76. Fast Boot Sequence (QE=1) CS# Mode 3 0 - - - - - - - n n+1 n+2 n+3 n+5 n+6 n+7 n+8 n+9 SCLK Mode 0 SIO0 SIO1 SIO2 SIO3 Delay Cycles Data Data Out 1 Out 2 High Impedance High Impedance High Impedance High Impedance Data Out 3 Data Out 4 4 0 4 0 4 0 4 0 4 5 1 5 1 5 1 5 1 5 6 2 6 2 6 2 6 2 6 7 3 7 3 7 3 7 3 7 MSB Note: If FBSD = 11, delay cycles is 13 and n is 12. If FBSD = 10, delay cycles is 11 and n is 10. If FBSD = 01, delay cycles is 9 and n is 8. If FBSD = 00, delay cycles is 7 and n is 6. P/N: PM2006 74 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Figure 77. Read Fast Boot Register (RDFBR) Sequence CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 37 38 39 40 41 SCLK Mode 0 Command SI 16h Data Out 1 High-Z SO 7 6 Data Out 2 5 26 25 24 7 6 MSB MSB Figure 78. Write Fast Boot Register (WRFBR) Sequence CS# 0 Mode 3 1 2 3 4 5 6 7 8 9 10 37 38 39 SCLK Mode 0 Command SI Fast Boot Register 17h 7 6 5 26 25 24 MSB High-Z SO Figure 79. Erase Fast Boot Register (ESFBR) Sequence CS# Mode 3 0 1 2 3 4 5 6 7 SCLK Mode 0 SI SO P/N: PM2006 Command 18h High-Z 75 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-27. Sector Erase (SE) The Sector Erase (SE) instruction is for erasing the data of the chosen sector to be "1". The instruction is used for any 4K-byte sector. A Write Enable (WREN) instruction must execute to set the Write Enable Latch (WEL) bit before sending the Sector Erase (SE). Any address of the sector (see "Table 4. Memory Organization") is a valid address for Sector Erase (SE) instruction. The CS# must go high exactly at the byte boundary (the least significant bit of the address byte been latched-in); otherwise, the instruction will be rejected and not executed. The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the 4-byte address read mode or to define EAR bit. Address bits [Am-A12] (Am is the most significant address) select the sector address. To enter the 4-byte address mode, please refer to the enter 4-byte mode (EN4B) Mode section. The sequence of issuing SE instruction is: CS# goes low→ sending SE instruction code→ 3-byte or 4-byte address on SI→ CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. The self-timed Sector Erase Cycle time (tSE) is initiated as soon as Chip Select (CS#) goes high. The Write in Progress (WIP) bit still can be checked while the Sector Erase cycle is in progress. The WIP sets 1 during the tSE timing, and clears when Sector Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If the Block is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector Protect Mode), the Sector Erase (SE) instruction will not be executed on the block. Figure 80. Sector Erase (SE) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 29 30 31 SCLK Mode 0 24-Bit Address (Note) Command SI 20h A23 A22 A2 A1 A0 MSB Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. Figure 81. Sector Erase (SE) Sequence (QPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 A4A7 A0A3 SCLK Mode 0 24-Bit Address (Note) Command SIO[3:0] 20h A20- A16- A12- A8A23 A19 A15 A11 MSB Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. P/N: PM2006 76 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-28. Block Erase (BE32K) The Block Erase (BE32K) instruction is for erasing the data of the chosen block to be "1". The instruction is used for 32K-byte block erase operation. A Write Enable (WREN) instruction be executed to set the Write Enable Latch (WEL) bit before sending the Block Erase (BE32K). Any address of the block (see "Table 4. Memory Organization") is a valid address for Block Erase (BE32K) instruction. The CS# must go high exactly at the byte boundary (the least significant bit of address byte been latched-in); otherwise, the instruction will be rejected and not executed. Address bits [Am-A15] (Am is the most significant address) select the 32KB block address. The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the 4-byte address read mode or to define EAR bit. To enter the 4-byte address mode, please refer to the enter 4-byte mode (EN4B) Mode section. The sequence of issuing BE32K instruction is: CS# goes low→ sending BE32K instruction code→ 3-byte or 4-byte address on SI→CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. The self-timed Block Erase Cycle time (tBE32K) is initiated as soon as Chip Select (CS#) goes high. The Write in Progress (WIP) bit still can be checked while during the Block Erase cycle is in progress. The WIP sets during the tBE32K timing, and clears when Block Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If the Block is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector Protect Mode), the Block Erase (BE32K) instruction will not be executed on the block. Figure 82. Block Erase 32KB (BE32K) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 29 30 31 SCLK Mode 0 Command SI 24-Bit Address (Note) 52h A23 A22 A2 A1 A0 MSB Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. Figure 83. Block Erase 32KB (BE32K) Sequence (QPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 A4A7 A0A3 SCLK Mode 0 24-Bit Address (Note) Command SIO[3:0] 52h A20- A16- A12A23 A19 A15 A8A11 MSB Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. P/N: PM2006 77 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-29. Block Erase (BE) The Block Erase (BE) instruction is for erasing the data of the chosen block to be "1". The instruction is used for 64K-byte block erase operation. A Write Enable (WREN) instruction must be executed to set the Write Enable Latch (WEL) bit before sending the Block Erase (BE). Any address of the block (Please refer to "Table 4. Memory Organization") is a valid address for Block Erase (BE) instruction. The CS# must go high exactly at the byte boundary (the least significant bit of address byte been latched-in); otherwise, the instruction will be rejected and not executed. The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the 4-byte address read mode or to define EAR bit. To enter the 4-byte address mode, please refer to the enter 4-byte mode (EN4B) Mode section. The sequence of issuing BE instruction is: CS# goes low→ sending BE instruction code→ 3-byte or 4-byte address on SI→ CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. The self-timed Block Erase Cycle time (tBE) is initiated as soon as Chip Select (CS#) goes high. The Write in Progress (WIP) bit still can be checked while the Block Erase cycle is in progress. The WIP sets during the tBE timing, and clears when Block Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the Block is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector Protect Mode), the Block Erase (BE) instruction will not be executed on the block. Figure 84. Block Erase (BE) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 29 30 31 SCLK Mode 0 Command SI 24-Bit Address (Note) D8h A23 A22 A2 A1 A0 MSB Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. Figure 85. Block Erase (BE) Sequence (QPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 A4A7 A0A3 SCLK Mode 0 24-Bit Address (Note) Command SIO[3:0] D8h A20- A16- A12- A8A23 A19 A15 A11 MSB Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. P/N: PM2006 78 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-30. Chip Erase (CE) The Chip Erase (CE) instruction is for erasing the data of the whole chip to be "1". A Write Enable (WREN) instruction must be executed to set the Write Enable Latch (WEL) bit before sending the Chip Erase (CE). The CS# must go high exactly at the byte boundary, otherwise the instruction will be rejected and not executed. The sequence of issuing CE instruction is: CS# goes low→sending CE instruction code→CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. The self-timed Chip Erase Cycle time (tCE) is initiated as soon as Chip Select (CS#) goes high. The Write in Progress (WIP) bit still can be checked while the Chip Erase cycle is in progress. The WIP sets during the tCE timing, and clears when Chip Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. When the chip is under "Block protect (BP) Mode" (WPSEL=0). The Chip Erase (CE) instruction will not be executed, if one (or more) sector is protected by BP3-BP0 bits. It will be only executed when BP3-BP0 all set to "0". When the chip is under "Advances Sector Protect Mode" (WPSEL=1). The Chip Erase (CE) instruction will be executed on unprotected block. The protected Block will be skipped. If one (or more) 4K byte sector was protected in top or bottom 64K byte block, the protected block will also skip the chip erase command. Figure 86. Chip Erase (CE) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 SCLK Mode 0 Command SI 60h or C7h Figure 87. Chip Erase (CE) Sequence (QPI Mode) CS# Mode 3 0 1 SCLK Mode 0 SIO[3:0] P/N: PM2006 Command 60h or C7h 79 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-31. Page Program (PP) The Page Program (PP) instruction is for programming the memory to be "0". A Write Enable (WREN) instruction must be executed to set the Write Enable Latch (WEL) bit before sending the Page Program (PP). The device programs only the last 256 data bytes sent to the device. If the entire 256 data bytes are going to be programmed, A7-A0 (The eight least significant address bits) should be set to 0. The last address byte (the 8 least significant address bits, A7-A0) should be set to 0 for 256 bytes page program. If A7-A0 are not all zero, transmitted data that exceed page length are programmed from the starting address (24-bit address that last 8 bit are all 0) of currently selected page. If the data bytes sent to the device exceeds 256, the last 256 data byte is programmed at the request page and previous data will be disregarded. If the data bytes sent to the device has not exceeded 256, the data will be programmed at the request address of the page. There will be no effort on the other data bytes of the same page. The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the 4-byte address read mode or to define EAR bit. To enter the 4-byte address mode, please refer to the enter 4-byte mode (EN4B) Mode section. The sequence of issuing PP instruction is: CS# goes low→ sending PP instruction code→ 3-byte or 4-byte address on SI→ at least 1-byte on data on SI→ CS# goes high. The CS# must be kept to low during the whole Page Program cycle; The CS# must go high exactly at the byte boundary( the latest eighth bit of data being latched in), otherwise the instruction will be rejected and will not be executed. The self-timed Page Program Cycle time (tPP) is initiated as soon as Chip Select (CS#) goes high. The Write in Progress (WIP) bit still can be checked while the Page Program cycle is in progress. The WIP sets during the tPP timing, and clears when Page Program Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If the page is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector Protect Mode), the Page Program (PP) instruction will not be executed. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. P/N: PM2006 80 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Figure 88. Page Program (PP) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39 SCLK 1 0 7 6 5 3 2 1 0 2079 2 2078 3 2077 23 22 21 02h SI Data Byte 1 24-Bit Address (Note) 2076 Command 2075 Mode 0 4 1 0 MSB MSB 2074 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 2073 2072 CS# SCLK Data Byte 2 7 SI 6 5 4 3 2 Data Byte 3 1 MSB 0 7 6 5 4 3 2 Data Byte 256 1 7 0 MSB 6 5 4 3 2 MSB Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. Figure 89. Page Program (PP) Sequence (QPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 H0 L0 SCLK Mode 0 Command SIO[3:0] 02h Data In 24-Bit Address (Note) A20A23 A16A19 A12A15 A8A11 A4A7 A0A3 H1 L1 H2 L2 H3 L3 Data Byte Data Byte Data Byte Data Byte 1 2 3 4 H255 L255 ...... Data Byte 256 Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. P/N: PM2006 81 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-32. 4 x I/O Page Program (4PP) The Quad Page Program (4PP) instruction is for programming the memory to be "0". A Write Enable (WREN) instruction must be executed to set the Write Enable Latch (WEL) bit and Quad Enable (QE) bit must be set to "1" before sending the Quad Page Program (4PP). The Quad Page Programming takes four pins: SIO0, SIO1, SIO2, and SIO3 as address and data input, which can improve programmer performance and the effectiveness of application. The other function descriptions are as same as standard page program. The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the 4-byte address read mode or to define EAR bit. To enter the 4-byte address mode, please refer to the enter 4-byte mode (EN4B) Mode section. The sequence of issuing 4PP instruction is: CS# goes low→ sending 4PP instruction code→ 3-byte or 4-byte address on SIO[3:0]→ at least 1-byte on data on SIO[3:0]→CS# goes high. If the page is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector Protect Mode), the Quad Page Program (4PP) instruction will not be executed. Figure 90. 4 x I/O Page Program (4PP) Sequence (SPI Mode only) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 SCLK Mode 0 Command Data Data Data Data Byte 1 Byte 2 Byte 3 Byte 4 6 Address cycle A0 4 0 4 0 4 0 4 0 SIO1 A21 A17 A13 A9 A5 A1 5 1 5 1 5 1 5 1 SIO2 A22 A18 A14 A10 A6 A2 6 2 6 2 6 2 6 2 SIO3 A23 A19 A15 A11 A7 A3 7 3 7 3 7 3 7 3 SIO0 38h A20 A16 A12 A8 A4 Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. P/N: PM2006 82 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-33. Deep Power-down (DP) The Deep Power-down (DP) instruction is for setting the device to minimum power consumption (the standby current is reduced from ISB1 to ISB2). The Deep Power-down mode requires the Deep Power-down (DP) instruction to enter, during the Deep Power-down mode, the device is not active and all Write/Program/Erase instruction are ignored. When CS# goes high, it's only in deep power-down mode not standby mode. It's different from Standby mode. The sequence of issuing DP instruction is: CS# goes low→sending DP instruction code→CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. Once the DP instruction is set, all instruction will be ignored except the Release from Deep Power-down mode (RDP) and Read Electronic Signature (RES) instruction and softreset command. (those instructions allow the ID being reading out). When Power-down, or software reset command the deep power-down mode automatically stops, and when power-up, the device automatically is in standby mode. For DP instruction the CS# must go high exactly at the byte boundary (the latest eighth bit of instruction code been latched-in); otherwise, the instruction will not executed. As soon as Chip Select (CS#) goes high, a delay of tDP is required before entering the Deep Power-down mode. Figure 91. Deep Power-down (DP) Sequence (SPI Mode) CS# 0 Mode 3 1 2 3 4 5 6 tDP 7 SCLK Mode 0 Command B9h SI Stand-by Mode Deep Power-down Mode Figure 92. Deep Power-down (DP) Sequence (QPI Mode) CS# Mode 3 0 1 tDP SCLK Mode 0 Command SIO[3:0] B9h Stand-by Mode P/N: PM2006 83 Deep Power-down Mode REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-34. Enter Secured OTP (ENSO) The ENSO instruction is for entering the additional 4K-bit secured OTP mode. While device is in 4K-bit secured OTPmode, main array access is not available. The additional 4K-bit secured OTP is independent from main array and may be used to store unique serial number for system identifier. After entering the Secured OTP mode, follow standard read or program procedure to read out the data or update data. The Secured OTP data cannot be updated again once it is lock-down. The sequence of issuing ENSO instruction is: CS# goes low→ sending ENSO instruction to enter Secured OTP mode→ CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. Please note that after issuing ENSO command user can only access secure OTP region with standard read or program procedure. Furthermore, once security OTP is lock down, only read related commands are valid. 9-35. Exit Secured OTP (EXSO) The EXSO instruction is for exiting the additional 4K-bit secured OTP mode. The sequence of issuing EXSO instruction is: CS# goes low→ sending EXSO instruction to exit Secured OTP mode→ CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. 9-36. Read Security Register (RDSCUR) The RDSCUR instruction is for reading the value of Security Register bits. The Read Security Register can be read at any time (even in program/erase/write status register/write security register condition) and continuously. The sequence of issuing RDSCUR instruction is : CS# goes low→sending RDSCUR instruction→Security Register data out on SO→ CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. 9-37. Write Security Register (WRSCUR) The WRSCUR instruction is for changing the values of Security Register Bits. The WREN (Write Enable) instruction is required before issuing WRSCUR instruction. The WRSCUR instruction may change the values of bit1 (LDSO bit) for customer to lock-down the 4K-bit Secured OTP area. Once the LDSO bit is set to "1", the Secured OTP area cannot be updated any more. The sequence of issuing WRSCUR instruction is :CS# goes low→ sending WRSCUR instruction → CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. The CS# must go high exactly at the boundary; otherwise, the instruction will be rejected and not executed. P/N: PM2006 84 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Security Register The definition of the Security Register bits is as below: Write Protection Selection bit. Please reference to "Write Protection Selection bit" Erase Fail bit. The Erase Fail bit is a status flag, which shows the status of last Erase operation. It will be set to "1", if the erase operation fails or the erase region is protected. It will be set to "0", if the last operation is success. Please note that it will not interrupt or stop any operation in the flash memory. Program Fail bit. The Program Fail bit is a status flag, which shows the status of last Program operation. It will be set to "1", if the program operation fails or the program region is protected. It will be set to "0", if the last operation is success. Please note that it will not interrupt or stop any operation in the flash memory. Erase Suspend bit. Erase Suspend Bit (ESB) indicates the status of Erase Suspend operation. Users may use ESB to identify the state of flash memory. After the flash memory is suspended by Erase Suspend command, ESB is set to "1". ESB is cleared to "0" after erase operation resumes. Program Suspend bit. Program Suspend Bit (PSB) indicates the status of Program Suspend operation. Users may use PSB to identify the state of flash memory. After the flash memory is suspended by Program Suspend command, PSB is set to "1". PSB is cleared to "0" after program operation resumes. Secured OTP Indicator bit. The Secured OTP indicator bit shows the chip is locked by factory or not. When it is "0", it indicates non-factory lock; "1" indicates factory-lock. Lock-down Secured OTP (LDSO) bit. By writing WRSCUR instruction, the LDSO bit may be set to "1" for customer lock-down purpose. However, once the bit is set to "1" (lock-down), the LDSO bit and the 4K-bit Secured OTP area cannot be updated any more. While it is in 4K-bit secured OTP mode, main array access is not allowed. Table 8. Security Register Definition bit7 bit6 bit5 bit4 WPSEL E_FAIL P_FAIL Reserved 0=normal WP mode 1=individual mode (default=0) 0=normal Erase succeed 1=indicate Erase failed (default=0) 0=normal Program succeed 1=indicate Program failed (default=0) - 0=Erase is not suspended 1= Erase suspended (default=0) Non-volatile bit (OTP) Volatile bit Volatile bit Volatile bit Volatile bit P/N: PM2006 bit3 bit2 ESB PSB (Erase (Program Suspend bit) Suspend bit) 85 bit1 bit0 LDSO Secured OTP (indicate if indicator bit lock-down) 0 = not lock0=Program down 0 = nonis not 1 = lock-down factory suspended (cannot lock 1= Program program/ 1 = factory suspended erase lock (default=0) OTP) Non-volatile Non-volatile Volatile bit bit bit (OTP) (OTP) REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-38. Write Protection Selection (WPSEL) There are two write protection methods provided on this device, (1) Block Lock (BP) protection mode (2) Advanced Sector protection mode. If WPSEL=0, flash is under BP protection mode. If WPSEL=1, flash is under Advanced Sector protection mode. The default value of WPSEL is “0”. WPSEL command can be used to set WPSEL=1. Please note that WPSEL is an OTP bit. Once WPSEL is set to 1, there is no chance to recovery WPSEL back to “0”. If the flash is put on BP mode, the Advanced Sector protection mode is disabled. Contrarily, if flash is on the Advanced Sector protection mode, the BP mode is disabled. Every time after the system is powered-on, and the Security Register bit 7 is checked to be WPSEL=1, all the blocks or sectors will be write protected by Dynamic Protected Bit (DPB) in default. User may only unlock the blocks or sectors via GBULK instruction. Program or erase functions can only be operated after the Unlock instruction is conducted. When WPSEL = 0: Block Lock (BP) protection mode, Array is protected by BP3~BP0 and BP bits are protected by “SRWD=1 and WP#=0”, where SRWD is bit 7 of status register that can be set by WRSR command. When WPSEL =1: Advanced Sector protection mode, Blocks are individually protected by their own SPB or DPB lock bits which are set to “1” after power up. When the system accepts and executes WPSEL instruction, the bit 7 in security register will be set. It will activate WRLR, RDLR, WRPASS, RDPASS, PASSULK, WRSPB, ESSPB, SPBLK, RDSPBLK, WRDPB, RDDPB, GBLK, GBULK etc instructions to conduct block lock protection and replace the original Software Protect Mode (SPM) use (BP3~BP0) indicated block methods. Under the Advanced Sector protection mode (WPSEL=1), hardware protection is performed by driving WP#=0. Once WP#=0 all array blocks/sectors are protected regardless of the contents of SPB or DPB lock bits. The sequence of issuing WPSEL instruction is: CS# goes low → sending WPSEL instruction to enter the individual block protect mode → CS# goes high. Write Protection Selection Start (Default in BP Mode) WPSEL=1 Set WPSEL Bit Advance Sector Protection Set Lock Register WPSEL=0 Block Protection (BP) Bit 1 =0 Bit 2 =0 Password Protection P/N: PM2006 Solid Protection 86 Dynamic Protection REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Figure 93. WPSEL Flow start WREN command RDSCUR command Yes WPSEL=1? No WPSEL disable, block protected by BP[3:0] WPSEL command RDSR command WIP=0? No Yes RDSCUR command WPSEL=1? No Yes WPSEL set successfully WPSEL set fail WPSEL enable. Block protected by Advance Sector Protection P/N: PM2006 87 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-39. Advanced Sector Protection There are two ways to implement software Advanced Sector Protection on this device: Password method or Solid method. Through these two protection methods, user can disable or enable the programming or erasing operation to any individual sector or all sectors. There is a non-volatile (SPB) and volatile (DPB) protection bit related to the single sector in main flash array. Each of the sectors is protected from programming or erasing operation when the bit is set. The temporary unprotect solid write protect bit (USPB) can temporarily unprotect the sectors protected by SPB. The figure below helps describing an overview of these methods. The device is default to the Solid mode when shipped from factory. The detail algorithm of advanced sector protection is shown as follows: Figure 94. Advanced Sector Protection Overview Start Bit 1=0 Bit 2=0 Set Lock Register ? Solid Protection Mode Password Protection Mode Set 64 bit Password Set SPB Lock Bit ? SPBLK = 0 SPB Lock bit locked All SPB can not be changeable SPBLK = 1 SPB Lock bit Unlocked SPB is changeable Dynamic Protect Bit Register (DPB) DPB=1 sector protect Sector Array DPB=0 sector unprotect P/N: PM2006 SPB Access Register (SPB) Temporary Unprotect SPB bit (USPB) SPB=1 Write Protect USPB=0 SPB bit is disabled SPB=0 Write Unprotect USPB=1 SPB bit is effective DPB 0 SA 0 SPB 0 DPB 1 SA 1 SPB 1 DPB 2 SA 2 SPB 2 : : : : : : DPB N-1 SA N-1 SPB N-1 DPB N SA N SPB N 88 USPB REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-39-1. Lock Register User can choose favorite sector protecting method via setting Lock Register bits 1 and 2. Lock Register is a 16bit one-time programmable register. Once bit 1 or bit 2 has been programmed (cleared to "0"), they will be locked in that mode and the others will be disabled permanently. Bit 1 and bit 2 can not be programmed at the same time, otherwise the device will abort the operation. If user selects Password Protection mode, the password setting is required. User can set password by issuing WRPASS command. Lock Register Bit 15-3 Reserved x OTP Bit 2 Password Protection Mode Lock Bit 0=Password Protection Mode Enable 1= Password Protection Mode not enable (Default =1) OTP Bit 1 Solid Protection Mode Lock Bit Bit0 Reserved 0=Solid Protection Mode Enable 1= Solid Protection Mode not enable (Default =1) x OTP OTP Notes: 1. While bit 2 or bit 1 has been "0" status, other bits can't be changed any more. If set lock register program mode, program fail will be set to "1". Figure 95. Read Lock Register (RDLR) Sequence CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCLK Mode 0 command 2Dh SI Register Out High-Z SO 7 6 5 4 3 2 Register Out 1 0 15 14 13 12 11 10 9 7 8 MSB MSB Figure 96. Write Lock Register (WRLR) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 SCLK Mode 0 SI SO P/N: PM2006 Command 2Ch High-Z Lock Register In 7 6 5 4 3 2 1 0 15 14 13 12 11 10 9 8 MSB 89 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-39-2. SPB Lock Bit (SPBLB) The Solid Protection Bit Lock Bit (SPBLB) is assigned to control all SPB status. It is unique and volatile. The default status of this register is determined by Lock Register bit 1 and bit 2 status. Refer to SPB Lock Register for more SPB Lock information. When under Solid Protect Mode, there is no software command sequence requested to unlock this bit. To clear the SPB lock bit, just take the device through a reset or a power-up cycle. When under Password Protection Mode, in order to prevent modification, the SPB Lock Bit must be set after all SPBs are setting the desired status. SPB Lock Register Bit Description 7-1 Reserved 0 Bit Status X 0= SPB bit protected 1= SPB bit unprotected SPBLK (Lock SPB Bit) Default 0000000 Solid protected Mode=1 Password Protected Mode=0 Type Volatile Volatile Figure 97. SPB Lock Bit Set (SPBLK) Sequence CS# 0 Mode 3 1 2 3 4 5 6 7 SCLK Mode 0 Command SI A6h High-Z SO Figure 98. Read SPB Lock Register (RDSPBLK) Sequence CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCLK Mode 0 command A7h SI SO High-Z Register Out 7 6 5 4 2 1 0 7 6 5 4 3 2 1 0 7 MSB MSB P/N: PM2006 3 Register Out 90 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-39-3. Solid Protection Bits The Solid write Protection bit (SPB) is a nonvolatile bit with the same endurances as the Flash memory. It is assigned to each sector individually. When a SPB is set to “1”, the associated sector may be protected, preventing any program or erase operation on this sector. The SPB bits are set individually by WRSPB command. However, it cannot be cleared individually. Issuing the ESSPB command will erase all SPB in the same time. To unprotect a protected sector (corresponding SPB cleared to “0”), the SPB lock bit must be unlocked first. Under password protection mode (lock register bit 2 set as "0"), a PASSULK command is requested before unlocking SPB lock bit. However, while the device is under Solid Protection mode (lock register bit 1 set as "0"), just a reset or a power-up cycle can unlock the SPB lock bit. After the SPB lock bit unlocked, the SPB status can be changed for desired settings. To lock the Solid Protection Bits after the modification has finished, the SPB Lock Bit must be set once again. To verify the programming state of the SPB for a given sector, issuing a RDSPB Command to the device is required. Note: 1. Once SPB Lock Bit is set, its program or erase command will not be executed and time-out without programming or erasing the SPB. SPB Register Bit Description 7 to 0 SPB (Solid protected Bit) P/N: PM2006 Bit Status 00h= SPB for the sector address unprotected FFh= SPB for the sector address protected 91 Default Type 00h Non-volatile REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Figure 99. Read SPB Status (RDSPB) Sequence CS# Mode 3 0 1 2 3 4 5 6 7 8 37 38 39 40 41 42 43 44 45 46 47 9 SCLK Mode 0 Command SI 32-Bit Address E2h A31 A30 A2 A1 A0 MSB Data Out High-Z SO 7 6 5 4 3 2 1 0 MSB Figure 100. SPB Erase (ESSPB) Sequence CS# 1 0 Mode 3 2 3 4 5 6 7 SCLK Mode 0 Command SI E4h High-Z SO Figure 101. SPB Program (WRSPB) Sequence CS# Mode 3 0 1 2 3 4 5 6 7 8 9 37 38 39 SCLK Mode 0 SI Command 32-Bit Address E3h A31 A30 A2 A1 A0 MSB P/N: PM2006 92 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-39-4. Dynamic Write Protection Bits The Dynamic Protection features a volatile type protection to each individual sector. It can protect sectors from unintentional change, and is easy to disable when there are necessary changes. All DPBs are default as protected (FFh) after reset or upon power up cycle. Via setting up Dynamic Protection bit (DPB) by write DPB command (WRDPB), user can cancel the Dynamic Protection of associated sector. The Dynamic Protection only works on those unprotected sectors whose SPBs are cleared. After the DPB state is cleared to “0”, the sector can be modified if the SPB state is unprotected state. DPB Register Bit Description 7 to 0 DPB (Dynamic protected Bit) Bit Status Default 00h= DPB for the sector address unprotected FFh FFh= DPB for the sector address protected Type Volatile Figure 102. Read DPB Register (RDDPB) Sequence CS# 0 Mode 3 1 2 3 4 5 6 7 8 37 38 39 40 41 42 43 44 45 46 47 9 SCLK Mode 0 Command SI 32-Bit Address E0h A31 A30 A2 A1 A0 MSB Data Out High-Z SO 7 6 5 4 3 2 1 0 MSB Figure 103. Write DPB Register (WRDPB) Sequence CS# Mode 3 0 1 2 3 4 5 6 7 8 37 38 39 40 41 42 43 44 45 46 47 9 SCLK Mode 0 SI Command E1h A31 A30 A2 A1 A0 MSB P/N: PM2006 Data Byte 1 32-Bit Address 7 6 5 4 3 2 1 0 MSB 93 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-39-5. Temporary Un-protect Solid write protect bit (USPB) Temporary Un-protect Solid write Protect Bit is volatile bit. Software can temporarily unprotect write protect sectors despite of SPBs' property when DPBs are cleared. While the USPB=1, all the SPBs’ property is masked. Notes: 1. Upon power up, the USPB status is default protected. The USPB can be unprotected (to “0”) or protected (to “1”) as often as needed. The hardware reset will reset USPB/DPB to their default values. 2. Please refer to "9-39-7. Sector Protection States Summary Table" for the sector state with the protection status of DPB/SPB/USPB bits. 9-39-6. Gang Block Lock/Unlock (GBLK/GBULK) These instructions are only effective after WPSEL was executed. The GBLK/GBULK instruction is a chip-based protected or unprotected operation. It can enable or disable all DPB. The WREN (Write Enable) instruction is required before issuing GBLK/GBULK instruction. The sequence of issuing GBLK/GBULK instruction is: CS# goes low → send GBLK/GBULK (7Eh/98h) instruction →CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. The CS# must go high exactly at the byte boundary, otherwise, the instruction will be rejected and not be executed. 9-39-7. Sector Protection States Summary Table DPB bit 0 0 0 0 1 1 1 1 P/N: PM2006 Protection Status SPB bit 0 0 1 1 0 0 1 1 Sector State USPB bit 0 1 0 1 0 1 0 1 Unprotect Unprotect Unprotect Protect Protect Protect Protect Protect 94 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-39-8. Password Protection Mode The security level of Password Protection Method is higher than the Solid protection mode. The 64 bit password is requested before modify SPB lock bit status. When device is under password protection mode, the SPB lock bit is set “0”, after a power-up cycle or Reset Command. A correct password is required for PASSULK command, to unlock the SPB lock bit. Await 2us is necessary to unlocked the device after valid password is given. After that, the SPB bits are allows to be changed. The PASSULK command are issued slower than 2 μs every time, to prevent hacker from trying all the 64-bit password combinations. To place the device in password protection mode, a few more steps are required. First, prior to entering the password protection mode, it is necessary to set a 64-bit password to verify it. Password verification is only allowed during the password programming operation. Second, the password protection mode is then activated by programming the Password Protection Mode Lock Bit to”0”. This operation is not reversible. Once the bit is programmed, it cannot be erased, and the device remains permanently in password protection mode, and the 64-bit password can neither be retrieved nor reprogrammed. Moreover, all commands to the address where the password is stored are disabled. The password is all “1”s when shipped from the factory, it is only capable of programming "0"s under WRPASS command. All 64-bit password combinations are valid as a password. No special address is required for programming the password. The password is no longer readable after the Password Protection mode is selected by programming Lock register bit 2 to "0". Once sector under protected status, device will ignores the program/erase command, enable status polling and returns to read mode without contents change. The DPB, SPB and SPB lock bit status of each sector can be verified by issuing RDSPB, RDDPB, RDSPBLK commands. ● The unlock operation may fail if the password provided by PASSULK command does not match the previously entered password. It causes the same result when a programming operation is performed on a protected sector. The P_ERR bit is set to 1 and the WIP Bit remains set. ● It is not allowed to execute the PASSULK command faster than every 100us ± 20us. The reason behind it is to make it impossible to hack into the system by running through all the combinations of a set of 64-bit password (58 million years). To verify if the device has completed the PASSULK command and is available to process a new password command, the Read Status Register command is needed to read the WIP bit. When a valid password is provided the PASSULK command does not insert the 100us delay before returning the WIP bit to zero. ● It is not feasible to set the SPB Lock bit if the password is missing after the Password Mode is selected. Password Register (PASS) Bits Field Function Type Name 63 to 0 PWD P/N: PM2006 Description Default State Non-volatile OTP storage of 64 bit password. The Hidden password is no longer readable after the password OTP FFFFFFFFFFFFFFFFh Password protection mode is selected by programming Lock register bit 2 to zero. 95 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Figure 104. Read Password Register (RDPASS) Sequence CS# Mode 3 0 1 2 3 4 5 6 7 8 69 70 71 72 73 9 SCLK Mode 0 Command SI 27h Data Out 1 High-Z SO 7 Data Out 2 6 58 57 56 7 6 MSB MSB Figure 105. Write Password Register (WRPASS) Sequence CS# Mode 3 0 1 2 3 4 5 6 7 8 69 70 71 9 SCLK Mode 0 Command SI Password 7 28h 6 58 57 56 9 69 70 71 MSB SO High-Z Figure 106. Password Unlock (PASSULK) Sequence CS# Mode 3 0 1 2 3 4 5 6 7 8 SCLK Mode 0 SI Command Password 7 29h 6 58 57 56 MSB SO P/N: PM2006 High-Z 96 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-40. Program/Erase Suspend/Resume The device allow the interruption of Sector-Erase, Block-Erase or Page-Program operations and conduct other operations. After issue suspend command, the system can determine if the device has entered the Erase-Suspended mode through Bit2 (PSB) and Bit3 (ESB) of security register. (please refer to "Table 8. Security Register Definition") The latency time of erase operation : Suspend to suspend ready timing: 25us. Resume to another suspend timing: 1ms. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. 9-41. Erase Suspend Erase suspend allow the interruption of all erase operations. After the device has entered Erase-Suspended mode, the system can read any sector(s) or Block(s) except those being erased by the suspended erase operation. Reading the sector or Block being erase suspended is invalid. After erase suspend, WEL bit will be clear, only read related, resume and reset command can be accepted. (including: 03h, 0Bh, 3Bh, 6Bh, BBh, EBh, ECh, EDh, EEh, 0Ch, BCh, 3Ch, 5Ah, C0h, 06h, 04h, 2Bh, 9Fh, AFh, 05h, ABh, 90h, B1h, C1h, B0h, 30h, 66h, 99h, 00h, 35h, F5h, 15h, 2Dh, 27h, A7h, E2h, E0h, 16h) If the system issues an Erase Suspend command after the sector erase operation has already begun, the device will not enter Erase-Suspended mode until 20us time has elapsed. Erase Suspend Bit (ESB) indicates the status of Erase Suspend operation. Users may use ESB to identify the state of flash memory. After the flash memory is suspended by Erase Suspend command, ESB is set to "1". ESB is cleared to "0" after erase operation resumes. 9-42. Program Suspend Program suspend allows the interruption of all program operations. After the device has entered ProgramSuspended mode, the system can read any sector(s) or Block(s) except those being programmed by the suspended program operation. Reading the sector or Block being program suspended is invalid. After program suspend, WEL bit will be cleared, only read related, resume and reset command can be accepted. (including: 03h, 0Bh, 3Bh, 6Bh, BBh, EBh, ECh, EDh, EEh, 0Ch, BCh, 3Ch, 5Ah, C0h, 06h, 04h, 2Bh, 9Fh, AFh, 05h, ABh, 90h, B1h, C1h, B0h, 30h, 66h, 99h, 00h, 35h, F5h, 15h, 2Dh, 27h, A7h, E2h, E0h, 16h) Program Suspend Bit (PSB) indicates the status of Program Suspend operation. Users may use PSB to identify the state of flash memory. After the flash memory is suspended by Program Suspend command, PSB is set to "1". PSB is cleared to "0" after program operation resumes. P/N: PM2006 97 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Figure 107. Suspend to Read Latency CS# Suspend Command [B0] Program latency Erase latency Read Command Figure 108. Resume to Read Latency CS# Resume Command [30] TSE/TBE/TPP Read Command Figure 109. Resume to Suspend Latency CS# P/N: PM2006 Resume Command [30] 1ms 98 Suspend Command [B0] REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-43. Write-Resume The Write operation is being resumed when Write-Resume instruction issued. ESB or PSB (suspend status bit) in Status register will be changed back to “0”. The operation of Write-Resume is as follows: CS# drives low → send write resume command cycle (30H) → drive CS# high. By polling Busy Bit in status register, the internal write operation status could be checked to be completed or not. The user may also wait the time lag of TSE, TBE, TPP for Sector-erase, Block-erase or Page-programming. WREN (command "06") is not required to issue before resume. Resume to another suspend operation requires latency time of 1ms. Please note that, if "performance enhance mode" is executed during suspend operation, the device can not be resumed. To restart the write command, disable the "performance enhance mode" is required. After the "performance enhance mode" is disabled, the write-resume command is effective. 9-44. No Operation (NOP) The “No Operation” command is only able to terminate the Reset Enable (RSTEN) command and will not affect any other command. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care during SPI mode. 9-45. Software Reset (Reset-Enable (RSTEN) and Reset (RST)) The Software Reset operation combines two instructions: Reset-Enable (RSTEN) command and Reset (RST) command. It returns the device to standby mode. All the volatile bits and settings will be cleared then, which makes the device return to the default status as power on. To execute Reset command (RST), the Reset-Enable (RSTEN) command must be executed first to perform the Reset operation. If there is any other command to interrupt after the Reset-Enable command, the Reset-Enable will be invalid. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. If the Reset command is executed during program or erase operation, the operation will be disabled, the data under processing could be damaged or lost. The reset time is different depending on the last operation. For details, please refer to "Table 13. Reset Timing(Other Operation)" for tREADY2. P/N: PM2006 99 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Figure 110. Software Reset Recovery Stand-by Mode 66 CS# 99 tREADY2 Mode Note: Refer to "Table 13. Reset Timing-(Other Operation)" for tREADY2. Figure 111. Reset Sequence (SPI mode) tSHSL CS# SCLK Mode 3 Mode 3 Mode 0 Mode 0 Command Command 99h 66h SIO0 Figure 112. Reset Sequence (QPI mode) tSHSL CS# MODE 3 MODE 3 MODE 3 SCLK MODE 0 SIO[3:0] P/N: PM2006 Command MODE 0 66h Command MODE 0 99h 100 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 9-46. Read SFDP Mode (RDSFDP) The Serial Flash Discoverable Parameter (SFDP) standard provides a consistent method of describing the functional and feature capabilities of serial flash devices in a standard set of internal parameter tables. These parameter tables can be interrogated by host system software to enable adjustments needed to accommodate divergent features from multiple vendors. The concept is similar to the one found in the Introduction of JEDEC Standard, JESD68 on CFI. The sequence of issuing RDSFDP instruction is CS# goes low→send RDSFDP instruction (5Ah)→send 3 address bytes on SI pin→send 1 dummy byte on SI pin→read SFDP code on SO→to end RDSFDP operation can use CS# to high at any time during data out. SFDP is a JEDEC standard, JESD216. Figure 113. Read Serial Flash Discoverable Parameter (RDSFDP) Sequence CS# 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 SCLK Command SI SO 24 BIT ADDRESS 23 22 21 5Ah 3 2 1 0 High-Z CS# 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCLK Dummy Cycle SI 7 6 5 4 3 2 1 0 DATA OUT 2 DATA OUT 1 SO 7 6 5 3 2 1 0 7 MSB MSB P/N: PM2006 4 101 6 5 4 3 2 1 0 7 MSB REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Table 9. Signature and Parameter Identification Data Values Description SFDP Signature Comment Fixed: 50444653h Add (h) DW Add (Byte) (Bit) 00h 07:00 Data (h/b) note1 53h Data (h) 53h 01h 15:08 46h 46h 02h 23:16 44h 44h 03h 31:24 50h 50h SFDP Minor Revision Number Start from 00h 04h 07:00 00h 00h SFDP Major Revision Number Start from 01h This number is 0-based. Therefore, 0 indicates 1 parameter header. 05h 15:08 01h 01h 06h 23:16 01h 01h 07h 31:24 FFh FFh 00h: it indicates a JEDEC specified header. 08h 07:00 00h 00h Start from 00h 09h 15:08 00h 00h Start from 01h 0Ah 23:16 01h 01h How many DWORDs in the Parameter table 0Bh 31:24 09h 09h 0Ch 07:00 30h 30h 0Dh 15:08 00h 00h 0Eh 23:16 00h 00h 0Fh 31:24 FFh FFh it indicates Macronix manufacturer ID 10h 07:00 C2h C2h Start from 00h 11h 15:08 00h 00h Start from 01h 12h 23:16 01h 01h How many DWORDs in the Parameter table 13h 31:24 04h 04h 14h 07:00 60h 60h 15h 15:08 00h 00h 16h 23:16 00h 00h 17h 31:24 FFh FFh Number of Parameter Headers Unused ID number (JEDEC) Parameter Table Minor Revision Number Parameter Table Major Revision Number Parameter Table Length (in double word) Parameter Table Pointer (PTP) First address of JEDEC Flash Parameter table Unused ID number (Macronix manufacturer ID) Parameter Table Minor Revision Number Parameter Table Major Revision Number Parameter Table Length (in double word) Parameter Table Pointer (PTP) First address of Macronix Flash Parameter table Unused P/N: PM2006 102 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Table 10. Parameter Table (0): JEDEC Flash Parameter Tables Description Comment Block/Sector Erase sizes 00: Reserved, 01: 4KB erase, 10: Reserved, 11: not support 4KB erase Write Granularity 0: 1Byte, 1: 64Byte or larger Write Enable Instruction Required 0: not required for Writing to Volatile Status 1: required 00h to be written to the Registers status register Add (h) DW Add (Byte) (Bit) 31h (1-1-2) Fast Read (Note2) 0=not support 1=support Address Bytes Number used in addressing flash array Double Transfer Rate (DTR) Clocking 00: 3Byte only, 01: 3 or 4Byte, 10: 4Byte only, 11: Reserved 01:00 01b 02 1b 03 0b 30h 0: use 50h opcode, 1: use 06h opcode Write Enable Opcode Select for Note: If target flash status register is Writing to Volatile Status Registers nonvolatile, then bits 3 and 4 must be set to 00b. Contains 111b and can never be Unused changed 4KB Erase Opcode Data (h/b) note1 0=not support 1=support 32h Data (h) E5h 04 0b 07:05 111b 15:08 20h 16 1b 18:17 01b 19 0b 20 1b 20h F3h (1-2-2) Fast Read 0=not support 1=support (1-4-4) Fast Read 0=not support 1=support 21 1b (1-1-4) Fast Read 0=not support 1=support 22 1b 23 1b 33h 31:24 FFh 37h:34h 31:00 1FFF FFFFh Unused Unused Flash Memory Density (1-4-4) Fast Read Number of Wait 0 0000b: Wait states (Dummy states (Note3) Clocks) not support (1-4-4) Fast Read Number of 000b: Mode Bits not support Mode Bits (Note4) 38h (1-4-4) Fast Read Opcode 39h (1-1-4) Fast Read Number of Wait 0 0000b: Wait states (Dummy states Clocks) not support (1-1-4) Fast Read Number of 000b: Mode Bits not support Mode Bits 3Ah (1-1-4) Fast Read Opcode 3Bh P/N: PM2006 103 04:00 0 0100b 07:05 010b 15:08 EBh 20:16 0 1000b 23:21 000b 31:24 6Bh FFh 44h EBh 08h 6Bh REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Description Comment (1-1-2) Fast Read Number of Wait 0 0000b: Wait states (Dummy states Clocks) not supported (1-1-2) Fast Read Number of 000b: Mode Bits not supported Mode Bits Add (h) DW Add (Byte) (Bit) 3Ch (1-1-2) Fast Read Opcode 3Dh (1-2-2) Fast Read Number of Wait 0 0000b: Wait states (Dummy states Clocks) not supported (1-2-2) Fast Read Number of 000b: Mode Bits not supported Mode Bits 3Eh (1-2-2) Fast Read Opcode 3Fh (2-2-2) Fast Read 0=not support 1=support Unused (4-4-4) Fast Read 40h 0=not support 1=support Unused Data (h/b) note1 04:00 0 1000b 07:05 000b 15:08 3Bh 20:16 0 0100b 23:21 000b 31:24 BBh 00 0b 03:01 111b 04 1b 07:05 111b Data (h) 08h 3Bh 04h BBh FEh Unused 43h:41h 31:08 FFh FFh Unused 45h:44h 15:00 FFh FFh 20:16 0 0000b 23:21 000b (2-2-2) Fast Read Number of Wait 0 0000b: Wait states (Dummy states Clocks) not supported (2-2-2) Fast Read Number of 000b: Mode Bits not supported Mode Bits 46h (2-2-2) Fast Read Opcode 47h 31:24 FFh FFh 49h:48h 15:00 FFh FFh 20:16 0 0100b 23:21 010b Unused 00h (4-4-4) Fast Read Number of Wait 0 0000b: Wait states (Dummy states Clocks) not supported (4-4-4) Fast Read Number of 000b: Mode Bits not supported Mode Bits 4Ah (4-4-4) Fast Read Opcode 4Bh 31:24 EBh EBh 4Ch 07:00 0Ch 0Ch 4Dh 15:08 20h 20h 4Eh 23:16 0Fh 0Fh 4Fh 31:24 52h 52h 50h 07:00 10h 10h 51h 15:08 D8h D8h 52h 23:16 00h 00h 53h 31:24 FFh FFh Sector Type 1 Size (Note5) Sector/block size = 2^N bytes 0x00b: this sector type doesn't exist Sector Type 1 erase Opcode Sector Type 2 Size Sector/block size = 2^N bytes 0x00b: this sector type doesn't exist Sector Type 2 erase Opcode Sector Type 3 Size Sector/block size = 2^N bytes 0x00b: this sector type doesn't exist Sector Type 3 erase Opcode Sector Type 4 Size Sector/block size = 2^N bytes 0x00b: this sector type doesn't exist Sector Type 4 erase Opcode P/N: PM2006 104 44h REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Table 11. Parameter Table (1): Macronix Flash Parameter Tables Description Comment Add (h) DW Add (Byte) (Bit) Data (h/b) note1 Data (h) Vcc Supply Maximum Voltage 2000h=2.000V 2700h=2.700V 3600h=3.600V 61h:60h 07:00 15:08 00h 36h 00h 36h Vcc Supply Minimum Voltage 1650h=1.650V 2250h=2.250V 2350h=2.350V 2700h=2.700V 63h:62h 23:16 31:24 00h 27h 00h 27h H/W Reset# pin 0=not support 1=support 00 1b H/W Hold# pin 0=not support 1=support 01 0b Deep Power Down Mode 0=not support 1=support 02 1b S/W Reset 0=not support 1=support 03 1b S/W Reset Opcode Reset Enable (66h) should be issued 65h:64h before Reset Opcode. Program Suspend/Resume 0=not support 1=support 12 1b Erase Suspend/Resume 0=not support 1=support 13 1b 14 1b 15 1b 66h 23:16 C0h C0h 67h 31:24 64h 64h Unused Wrap-Around Read mode 0=not support 1=support Wrap-Around Read mode Opcode 11:04 1001 1001b F99Dh (99h) Wrap-Around Read data length 08h:support 8B wrap-around read 16h:8B&16B 32h:8B&16B&32B 64h:8B&16B&32B&64B Individual block lock 0=not support 1=support 00 1b Individual block lock bit (Volatile/Nonvolatile) 0=Volatile 1=Nonvolatile 01 0b 09:02 1110 0001b (E1h) 10 0b 11 1b Individual block lock Opcode Individual block lock Volatile protect bit default protect status 0=protect 1=unprotect Secured OTP 0=not support 1=support Read Lock 0=not support 1=support 12 0b Permanent Lock 0=not support 1=support 13 0b Unused 15:14 11b Unused 31:16 FFh FFh [31:00] FFh FFh Unused P/N: PM2006 6Bh:68h 6Fh:6Ch 105 CB85h REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Note 1: h/b is hexadecimal or binary. Note 2: (x-y-z) means I/O mode nomenclature used to indicate the number of active pins used for the opcode (x), address (y), and data (z). At the present time, the only valid Read SFDP instruction modes are: (1-1-1), (2-2-2), and (4-4-4) Note 3: Wait States is required dummy clock cycles after the address bits or optional mode bits. Note 4: Mode Bits is optional control bits that follow the address bits. These bits are driven by the system controller if they are specified. (eg,read performance enhance toggling bits) Note 5: 4KB=2^0Ch,32KB=2^0Fh,64KB=2^10h Note 6: All unused and undefined area data is blank FFh. P/N: PM2006 106 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 10. RESET Driving the RESET# pin low for a period of tRLRH or longer will reset the device. After reset cycle, the device is at the following states: - Standby mode - All the volatile bits such as WEL/WIP/SRAM lock bit will return to the default status as power on. - 3-byte address mode If the device is under programming or erasing, driving the RESET# pin low will also terminate the operation and data could be lost. During the resetting cycle, the SO data becomes high impedance and the current will be reduced to minimum. Figure 114. RESET Timing CS# tRHSL SCLK tRH tRS RESET# tRLRH tREADY1 / tREADY2 Table 12. Reset Timing-(Power On) Symbol Parameter tRHSL Reset# high before CS# low tRS Reset# setup time tRH Reset# hold time tRLRH Reset# low pulse width tREADY1 Reset Recovery time Min. 10 15 15 10 35 Typ. Max. Unit us ns ns us us Min. 10 15 15 10 40 40 310 12 25 1000 40 Typ. Max. Unit us ns ns us us us us ms ms ms ms Table 13. Reset Timing-(Other Operation) Symbol tRHSL tRS tRH tRLRH Parameter Reset# high before CS# low Reset# setup time Reset# hold time Reset# low pulse width Reset Recovery time (During instruction decoding) Reset Recovery time (for read operation) Reset Recovery time (for program operation) tREADY2 Reset Recovery time(for SE4KB operation) Reset Recovery time (for BE64K/BE32KB operation) Reset Recovery time (for Chip Erase operation) Reset Recovery time (for WRSR operation) P/N: PM2006 107 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 11. POWER-ON STATE The device is at below states when power-up: - Standby mode (please note it is not deep power-down mode) - Write Enable Latch (WEL) bit is reset The device must not be selected during power-up and power-down stage unless the VCC achieves below correct level: - VCC minimum at power-up stage and then after a delay of tVSL - GND at power-down Please note that a pull-up resistor on CS# may ensure a safe and proper power-up/down level. An internal power-on reset (POR) circuit may protect the device from data corruption and inadvertent data change during power up state. When VCC is lower than VWI (POR threshold voltage value), the internal logic is reset and the flash device has no response to any command. For further protection on the device, if the VCC does not reach the VCC minimum level, the correct operation is not guaranteed. The write, erase, and program command should be sent after the below time delay: - tVSL after VCC reached VCC minimum level The device can accept read command after VCC reached VCC minimum and a time delay of tVSL. Please refer to the "power-up timing". Note: - To stabilize the VCC level, the VCC rail decoupled by a suitable capacitor close to package pins is recommended. (generally around 0.1uF) - At power-down stage, the VCC drops below VWI level, all operations are disable and device has no response to any command. The data corruption might occur during the stage while a write, program, erase cycle is in progress. P/N: PM2006 108 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 12. ELECTRICAL SPECIFICATIONS Table 14. ABSOLUTE MAXIMUM RATINGS RATING VALUE Ambient Operating Temperature Industrial grade -40°C to 85°C Storage Temperature -65°C to 150°C Applied Input Voltage -0.5V to VCC+0.5V Applied Output Voltage -0.5V to VCC+0.5V VCC to Ground Potential -0.5V to 4.0V NOTICE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and functional operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended period may affect reliability. 2. Specifications contained within the following tables are subject to change. 3. During voltage transitions, all pins may overshoot to VCC+2.0V or -2.0V for period up to 20ns. Figure 116. Maximum Positive Overshoot Waveform Figure 115. Maximum Negative Overshoot Waveform 20ns 20ns 20ns Vss Vcc + 2.0V Vss-2.0V Vcc 20ns 20ns 20ns Table 15. CAPACITANCE TA = 25°C, f = 1.0 MHz Symbol Parameter CIN COUT P/N: PM2006 Min. Typ. Max. Unit Input Capacitance 8 pF VIN = 0V Output Capacitance 8 pF VOUT = 0V 109 Conditions REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Figure 117. INPUT TEST WAVEFORMS AND MEASUREMENT LEVEL Input timing reference level 0.8VCC Output timing reference level 0.7VCC AC Measurement Level 0.8V 0.2VCC 0.5VCC Note: Input pulse rise and fall time are <5ns Figure 118. OUTPUT LOADING 25K ohm DEVICE UNDER TEST CL +3.0V 25K ohm CL=30pF Including jig capacitance P/N: PM2006 110 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Table 16. DC CHARACTERISTICS (Temperature = -40°C to 85°C, VCC = 2.7V ~ 3.6V) Symbol Parameter Notes Min. Typ. Max. Units Test Conditions ILI Input Load Current 1 ±2 uA VCC = VCC Max, VIN = VCC or GND ILO Output Leakage Current 1 ±2 uA VCC = VCC Max, VOUT = VCC or GND ISB1 VCC Standby Current 1 50 100 uA VIN = VCC or GND, CS# = VCC ISB2 Deep Power-down Current 5 20 uA VIN = VCC or GND, CS# = VCC 20 mA f=104MHz, (4 x I/O read) SCLK=0.1VCC/0.9VCC, SO=Open 15 mA f=84MHz, SCLK=0.1VCC/0.9VCC, SO=Open 25 mA 20 mA ICC1 VCC Read VIL VCC Program Current (PP) VCC Write Status Register (WRSR) Current VCC Sector/Block (32K, 64K) Erase Current (SE/BE/BE32K) VCC Chip Erase Current (CE) Input Low Voltage VIH Input High Voltage VOL Output Low Voltage VOH Output High Voltage ICC2 ICC3 ICC4 ICC5 1 1 20 Program in Progress, CS# = VCC Program status register in progress, CS#=VCC 1 20 25 mA Erase in Progress, CS#=VCC 1 20 25 mA Erase in Progress, CS#=VCC -0.5 0.8 V 0.7VCC VCC+0.4 V 0.2 V IOL = 100uA V IOH = -100uA VCC-0.2 Notes : 1. Typical values at VCC = 3.3V, T = 25°C. These currents are valid for all product versions (package and speeds). 2. Typical value is calculated by simulation. P/N: PM2006 111 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Table 17. AC CHARACTERISTICS (Temperature = -40°C to 85°C, VCC = 2.7V ~ 3.6V) Symbol fSCLK fRSCLK fTSCLK Alt. Parameter fC Clock Frequency for all commands(except Read Operation) fR Clock Frequency for READ instructions Clock Frequency for FAST READ, DREAD, 2READ, QREAD, 4READ, FASTDTRD, 2DTRD, 4DTRD tCH(1) tCLH Clock High Time tCL(1) tCLL Clock Low Time Others (fSCLK) Normal Read (fRSCLK) Others (fSCLK) Normal Read (fRSCLK) tCLCH(2) Clock Rise Time (peak to peak) tCHCL(2) Clock Fall Time (peak to peak) tSLCH tCSS CS# Active Setup Time (relative to SCLK) tCHSL CS# Not Active Hold Time (relative to SCLK) tDVCH tDSU Data In Setup Time tCHDX tDH Data In Hold Time tCHSH CS# Active Hold Time (relative to SCLK) tSHCH CS# Not Active Setup Time (relative to SCLK) Read tSHSL tCSH CS# Deselect Time Write/Erase/Program tSHQZ(2) tDIS Output Disable Time Loading: 30pF tCLQV tV Clock Low to Output Valid Loading: 15pF Loading: 10pF tCLQX tHO Output Hold Time tWHSL(3) Write Protect Setup Time tSHWL(3) Write Protect Hold Time tDP(2) CS# High to Deep Power-down Mode CS# High to Standby Mode without Electronic Signature (2) tRES1 Read tRES2(2) CS# High to Standby Mode with Electronic Signature Read tW Write Status/Configuration Register Cycle Time tWREAW Write Extended Address Register tBP Byte-Program tPP Page Program Cycle Time tPP(5) Page Program Cycle Time (n bytes) Min. D.C. Typ. Max. 166 66 see "Dummy Cycle and Frequency Table (MHz)" 45% fTSCLK 7 45% fTSCLK 7 0.1 0.1 3 4 2 2 3 3 7 30 8 8 6 5 1 20 100 10 40 12 0.6 0.016 + 0.016* (n/16) (6) 43 190 340 240 Unit MHz MHz MHz ns ns ns ns V/ns V/ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns us 30 us 30 40 60 3 us ms ns us ms 3 ms tSE Sector Erase Cycle Time 200 ms tBE32 Block Erase (32KB) Cycle Time 1000 ms tBE Block Erase (64KB) Cycle Time 2000 ms tCE Chip Erase Cycle Time 600 s Notes: 1. tCH + tCL must be greater than or equal to 1/ Frequency. 2. Typical values given for TA=25°C. Not 100% tested. 3. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1. 4. Test condition is shown as Figure 117 and Figure 118. 5. While programming consecutive bytes, Page Program instruction provides optimized timings by selecting to program the whole 256 bytes or only a few bytes between 1~256 bytes. 6. “n”=how many bytes to program. The number of (n/16) will be round up to next integer. In the formula, while n=1, byte program time=32us. While n=17, byte program time=48us. 7. By default dummy cycle value. Please refer to the "Table 1. Read performance Comparison". P/N: PM2006 112 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 13. OPERATING CONDITIONS At Device Power-Up and Power-Down AC timing illustrated in Figure 119 and Figure 120 are for the supply voltages and the control signals at device power-up and power-down. If the timing in the figures is ignored, the device will not operate correctly. During power-up and power-down, CS# needs to follow the voltage applied on VCC to keep the device not to be selected. The CS# can be driven low when VCC reach Vcc(min.) and wait a period of tVSL. Figure 119. AC Timing at Device Power-Up VCC VCC(min) GND tVR tSHSL CS# tSLCH tCHSL tCHSH tSHCH SCLK tDVCH tCHCL tCHDX LSB IN MSB IN SI High Impedance SO Symbol tVR tCLCH Parameter VCC Rise Time Notes 1 Min. 20 Max. 500000 Unit us/V Notes : 1. Sampled, not 100% tested. 2. For AC spec tCHSL, tSLCH, tDVCH, tCHDX, tSHSL, tCHSH, tSHCH, tCHCL, tCLCH in the figure, please refer to Table 17. AC CHARACTERISTICS. P/N: PM2006 113 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Figure 120. Power-Down Sequence During power-down, CS# needs to follow the voltage drop on VCC to avoid mis-operation. VCC CS# SCLK Figure 121. Power-up Timing VCC VCC(max) Chip Selection is Not Allowed VCC(min) tVSL Device is fully accessible VWI time P/N: PM2006 114 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G Figure 122. Power Up/Down and Voltage Drop For Power-down to Power-up operation, the VCC of flash device must below VPWD for at least tPWD timing. Please check the table below for more detail. VCC VCC (max.) Chip Select is not allowed VCC (min.) tVSL Full Device Access Allowed VPWD (max.) tPWD Time Table 18. Power-Up/Down Voltage and Timing Symbol tVSL VWI VPWD tPWD tVR VCC Parameter VCC(min.) to device operation Command Inhibit Voltage VCC voltage needed to below VPWD for ensuring initialization will occur The minimum duration for ensuring initialization will occur VCC Rise Time VCC Power Supply Min. 1500 2.3 300 20 2.7 Max. 2.5 0.9 500000 3.6 Unit us V V us us/V V Note: These parameters are characterized only. 13-1. INITIAL DELIVERY STATE The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh). The Status Register contains 00h (all Status Register bits are 0). P/N: PM2006 115 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 14. ERASE AND PROGRAMMING PERFORMANCE Parameter Typ. (1) Min. Max. (2) Unit 40 ms Write Status Register Cycle Time Sector Erase Cycle Time (4KB) 43 200 ms Block Erase Cycle Time (32KB) 0.19 1 s Block Erase Cycle Time (64KB) 0.34 2 s Chip Erase Cycle Time 240 600 s Byte Program Time (via page program command) 12 60 us Page Program Time 0.6 3 ms Erase/Program Cycle 100,000 cycles Note: 1. Typical program and erase time assumes the following conditions: 25°C, 3.3V, and checkerboard pattern. 2. Under worst conditions of 85°C and 2.7V. 3. System-level overhead is the time required to execute the first-bus-cycle sequence for the programming command. 4. The maximum chip programming time is evaluated under the worst conditions of 0°C, VCC=3.3V, and 100K cycle with 90% confidence level. 15. DATA RETENTION Parameter Condition Min. Data retention 55˚C 20 Max. Unit years 16. LATCH-UP CHARACTERISTICS Min. Max. Input Voltage with respect to GND on all power pins, SI, CS# -1.0V 2 VCCmax Input Voltage with respect to GND on SO -1.0V VCC + 1.0V -100mA +100mA Current Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time. P/N: PM2006 116 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 17. ORDERING INFORMATION PART NO. CLOCK (MHz) TEMPERATURE PACKAGE MX25L51245GMI-10G 104 -40°C~85°C 16-SOP (300mil) MX25L51245GZ2I-10G 104 -40°C~85°C 8-WSON (8x6mm) MX25L51245GXDI-10G 104 -40°C~85°C 24-Ball BGA (5x5 ball array) P/N: PM2006 117 Remark REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 18. PART NAME DESCRIPTION MX 25 L 51245G Z2 I 10 G OPTION: G: RoHS Compliant & Halogen-free SPEED: 10: 104MHz TEMPERATURE RANGE: I: Industrial (-40°C to 85°C) PACKAGE: M: 16-SOP (300mil) Z2: 8-WSON (8x6mm) XD: 24-Ball BGA (5x5 ball array) DENSITY & MODE: 51245G: 512Mb TYPE: L: 3V DEVICE: 25: Serial Flash P/N: PM2006 118 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 19. PACKAGE INFORMATION P/N: PM2006 119 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G P/N: PM2006 120 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G P/N: PM2006 121 REV. 0.01, JAN. 06, 2014 PRELIMINARY MX25L51245G 20. REVISION HISTORY Revision No. Description 0.01 1. Modified 16-PIN SOP 2. Updated parameters for AC Characteristics 3. Content correction 4. Modified VCC to Ground Potential parameter 5. Corrected Figure 42~51 P/N: PM2006 122 Page P7 P112 P88~94,116 P109 P54~58 Date JAN/06/2014 REV. 0.01, JAN. 06, 2014 MX25L51245G Except for customized products which has been expressly identified in the applicable agreement, Macronix's products are designed, developed, and/or manufactured for ordinary business, industrial, personal, and/or household applications only, and not for use in any applications which may, directly or indirectly, cause death, personal injury, or severe property damages. In the event Macronix products are used in contradicted to their target usage above, the buyer shall take any and all actions to ensure said Macronix's product qualified for its actual use in accordance with the applicable laws and regulations; and Macronix as well as it’s suppliers and/or distributors shall be released from any and all liability arisen therefrom. Copyright© Macronix International Co., Ltd. 2013~2014. All rights reserved, including the trademarks and tradename thereof, such as Macronix, MXIC, MXIC Logo, MX Logo, Integrated Solutions Provider, NBit, Nbit, NBiit, Macronix NBit, eLiteFlash, HybridNVM, HybridFlash, XtraROM, Phines, KH Logo, BE-SONOS, KSMC, Kingtech, MXSMIO, Macronix vEE, Macronix MAP, Rich Audio, Rich Book, Rich TV, and FitCAM. The names and brands of third party referred thereto (if any) are for identification purposes only. For the contact and order information, please visit Macronix’s Web site at: http://www.macronix.com MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice. 123