Plastic-Encapsulate Diodes ZENER DIODES MMBZ52XXB series FEATURES • Planar Die construction • 500mW Power Dissipation • Zener Voltages from 2.4V - 39V • Ideally Suited for Automated Assembly Processes SOT-23 Parameter Symbol Value Units Power Dissipation (Notes A) at 75OC PD 500 mW Peak Forward Surge Current, 8.3ms single half sine-wave superimposed on rated load (JEDEC method) (Notes B) IFSM 4.0 Amps TJ -55 to +150 Operating Junction and StorageTemperature Range C O NOTES: A. Mounted on 5.0mm2(.013mm thick) land areas. B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum. GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P3-P1 Plastic-Encapsulate Diodes MMBZ52XXB series ELECTRICAL CHARACTERISTICS @ Ta=25ÿ unless otherwise specified Nominal Zener Voltage Part N umber Z ZT @ I ZT V Z @ IZT No m. V M i n. V M a x. V Max Reverse Leakage Current Max. Zener Impedance Ω mA Z ZK @ I ZK Ω mA IR @ V R nA V Typical Temp. Coefficient TC Max. Zener Current IZM @ T a mA 500 mWatts Zener D iodes MMBZ5221B 2.4 2.28 2.52 30 20 1200 0.25 100 1 -0.070 188 MMBZ5222B 2.5 2.38 2.63 30 20 1250 0.25 100 1 -0.065 180 MMBZ5223B 2.7 2.57 2.84 30 20 1300 0.25 75 1 -0.060 167 150 MMBZ5225B 3 2.85 3.15 30 20 1600 0.25 50 1 -0.055 MMBZ5226B 3.3 3.14 3.47 28 20 1600 0.25 25 1 0.030 138 MMBZ5227B 3.6 3.42 3.78 24 20 1700 0.25 15 1 0.030 126 MMBZ5228B 3.9 3.71 4.1 23 20 1900 0.25 10 1 +0.038 115 MMBZ5229B 4.3 4.09 4.52 22 20 2000 0.25 5 1 +0.038 106 MMBZ5230B 4.7 4.47 4.94 19 20 1900 0.25 5 2 +0.045 97 MMBZ5231B 5.1 4.85 5.36 17 20 1600 0.25 5 2 +0.050 89 MMBZ5232B 5.6 5.32 5.88 11 20 1600 0.25 5 3 +0.058 81 MMBZ5234B 6.2 5.89 6.51 7 20 1000 0.25 5 4 +0.062 73 MMBZ5235B 6.8 6.46 7.14 5 20 750 0.25 3 5 +0.065 67 MMBZ5236B 7.5 7.13 7.88 6 20 500 0.25 3 6 +0.068 61 MMBZ5237B 8.2 7.79 8.61 8 20 500 0.25 3 6 +0.075 55 MMBZ5239B 9.1 8.65 9.56 10 20 600 0.25 3 6.5 +0.076 50 MMBZ5240B 10 9.5 10.5 17 20 600 0.25 3 8 +0.077 45 MMBZ5241B 11 10.45 11.55 22 20 600 0.25 3 8.4 +0.079 41 MMBZ5242B 12 11.4 12.6 30 20 600 0.25 2 9.1 +0.082 38 35 MMBZ5243B 13 12.35 13.65 13 9.5 600 0.25 1 9.9 +0.082 MMBZ5245B 15 14.25 15.75 16 8.5 600 0.25 0.5 11 +0.083 30 MMBZ5246B 16 15.2 16.8 17 7.8 600 0.25 0.1 12 +0.084 28 MMBZ5248B 18 17.1 18.9 21 7 600 0.25 0.1 14 +0.085 25 MMBZ5250B 20 19 21 25 6.2 600 0.25 0.1 15 +0.086 23 MMBZ5251B 22 20.9 23.1 29 5.6 600 0.25 0.1 17 +0.086 21 MMBZ5252B 24 22.8 25.2 33 5.2 600 0.25 0.1 18 +0.087 19.1 MMBZ5254B 27 25.65 28.35 41 5 600 0.25 0.1 21 +0.087 16.8 MMBZ5255B 28 26.6 29.4 44 4.5 600 0.25 0.1 21 +0.089 16.2 MMBZ5256B 30 28.5 31.5 49 4.2 600 0.25 0.1 23 +0.090 15.1 MMBZ5257B 33 31.35 34.65 58 3.8 700 0.25 0.1 25 +0.091 13.8 MMBZ5258B 36 34.2 37.8 70 3.4 700 0.25 0.1 27 +0.091 12.6 MMBZ5259B 39 37.05 40.95 80 3.2 800 0.25 0.1 30 +0.092 11.6 NOTE: 1. Tolerance and Type Number Designation. The type numbers listed have a standard tolerance on the nominal zener voltage of ±5%. 2. Specials Available Include: A. Nominal zener voltages between the voltages shown and tighter voltage tolerances. B. Matched sets. 3. Zener Voltage (VZ) Measurement. Guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (TL) at 30OC, from the diode body. 4. Zener Impedance (ZZ) Derivation. The zener impedance is derived from the 60 cycle ac voltage, which results when an AC current having an rms value equal to 10% of the dc zener current (IZT or IZK) is superimposed on IZT or IZK. 5. Surge Current (IR) Non-Repetitive. The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, IZT, per JEDEC registration; however, actual device capability is as described in Figure 5. GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P3-P2 Plastic-Encapsulate Diodes MMBZ52XXB series 8 100 TEMPERATURE COEFFICIENT,mV / oC) TEMPERATURE COEFFICIENT,mV / oC) 7 6 5 4 3 10 2 1 0 -1 -2 -3 2 3 4 5 6 7 8 9 10 11 1 10 12 100 NOMINAL ZENER VOLTAGE, Volts NOMINAL ZENER VOLTAGE, Volts TYPICAL REVERSE CURRENT 1000 TJ=25 C IZ(AC)=0.1IZ(DC) F=1 kHZ O IZ = 1 mA FORWARD CURRENT, mA DYNAMIC IMPEDANCE, W 1000 STEADY STATE POWER DERATING 100 5 mA 20 mA 10 100 150OC 10 O 75 C 25OC 1 1 10 1 0.4 100 0.5 0.7 0.8 0.9 1.0 1.1 1.2 FORWARD VOLTAGE, Volts NORMAL ZENER VOLTAGE, Volts TYPICAL FORWARD VOLTAGE EFFECT OF ZENER VOLTAGE ON ZENER IMPEDANCE 1000 1.2 1.0 CAPACITANCE, pF POWER DISSIPATION, Watts 0.6 O 5C 0.8 0.6 PD V.S. TA 0.4 TA=25oC 0 V BIAS 1 V BIAS 100 BIAS AT 50% OF VZ NOM 10 0.2 0 25 50 75 100 125 150 155 1 1 10 100 o TEMPERATURE ( C) NOMINAL ZENER VOLTAGE, Volts STEADY STATE POWER DERATING GUANGDONG HOTTECH TYPICAL CAPACITANCE INDUSTRIAL CO,. LTD. Page:P3-P3