HOTTECH MMBZ5254B Plastic-encapsulate diode Datasheet

Plastic-Encapsulate Diodes
ZENER DIODES
MMBZ52XXB series
FEATURES
• Planar Die construction
• 500mW Power Dissipation
• Zener Voltages from 2.4V - 39V
• Ideally Suited for Automated Assembly Processes
SOT-23
Parameter
Symbol
Value
Units
Power Dissipation (Notes A) at 75OC
PD
500
mW
Peak Forward Surge Current, 8.3ms single half
sine-wave superimposed on rated load (JEDEC method) (Notes B)
IFSM
4.0
Amps
TJ
-55 to +150
Operating Junction and StorageTemperature Range
C
O
NOTES:
A. Mounted on 5.0mm2(.013mm thick) land areas.
B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.
GUANGDONG HOTTECH
INDUSTRIAL CO,. LTD.
Page:P3-P1
Plastic-Encapsulate Diodes
MMBZ52XXB series
ELECTRICAL CHARACTERISTICS @ Ta=25ÿ unless otherwise specified
Nominal Zener Voltage
Part N umber
Z ZT @ I ZT
V Z @ IZT
No m. V
M i n. V
M a x. V
Max Reverse
Leakage Current
Max. Zener Impedance
Ω
mA
Z ZK @ I ZK
Ω
mA
IR @ V R
nA
V
Typical Temp.
Coefficient
TC
Max. Zener
Current
IZM @ T a
mA
500 mWatts Zener D iodes
MMBZ5221B
2.4
2.28
2.52
30
20
1200
0.25
100
1
-0.070
188
MMBZ5222B
2.5
2.38
2.63
30
20
1250
0.25
100
1
-0.065
180
MMBZ5223B
2.7
2.57
2.84
30
20
1300
0.25
75
1
-0.060
167
150
MMBZ5225B
3
2.85
3.15
30
20
1600
0.25
50
1
-0.055
MMBZ5226B
3.3
3.14
3.47
28
20
1600
0.25
25
1
0.030
138
MMBZ5227B
3.6
3.42
3.78
24
20
1700
0.25
15
1
0.030
126
MMBZ5228B
3.9
3.71
4.1
23
20
1900
0.25
10
1
+0.038
115
MMBZ5229B
4.3
4.09
4.52
22
20
2000
0.25
5
1
+0.038
106
MMBZ5230B
4.7
4.47
4.94
19
20
1900
0.25
5
2
+0.045
97
MMBZ5231B
5.1
4.85
5.36
17
20
1600
0.25
5
2
+0.050
89
MMBZ5232B
5.6
5.32
5.88
11
20
1600
0.25
5
3
+0.058
81
MMBZ5234B
6.2
5.89
6.51
7
20
1000
0.25
5
4
+0.062
73
MMBZ5235B
6.8
6.46
7.14
5
20
750
0.25
3
5
+0.065
67
MMBZ5236B
7.5
7.13
7.88
6
20
500
0.25
3
6
+0.068
61
MMBZ5237B
8.2
7.79
8.61
8
20
500
0.25
3
6
+0.075
55
MMBZ5239B
9.1
8.65
9.56
10
20
600
0.25
3
6.5
+0.076
50
MMBZ5240B
10
9.5
10.5
17
20
600
0.25
3
8
+0.077
45
MMBZ5241B
11
10.45
11.55
22
20
600
0.25
3
8.4
+0.079
41
MMBZ5242B
12
11.4
12.6
30
20
600
0.25
2
9.1
+0.082
38
35
MMBZ5243B
13
12.35
13.65
13
9.5
600
0.25
1
9.9
+0.082
MMBZ5245B
15
14.25
15.75
16
8.5
600
0.25
0.5
11
+0.083
30
MMBZ5246B
16
15.2
16.8
17
7.8
600
0.25
0.1
12
+0.084
28
MMBZ5248B
18
17.1
18.9
21
7
600
0.25
0.1
14
+0.085
25
MMBZ5250B
20
19
21
25
6.2
600
0.25
0.1
15
+0.086
23
MMBZ5251B
22
20.9
23.1
29
5.6
600
0.25
0.1
17
+0.086
21
MMBZ5252B
24
22.8
25.2
33
5.2
600
0.25
0.1
18
+0.087
19.1
MMBZ5254B
27
25.65
28.35
41
5
600
0.25
0.1
21
+0.087
16.8
MMBZ5255B
28
26.6
29.4
44
4.5
600
0.25
0.1
21
+0.089
16.2
MMBZ5256B
30
28.5
31.5
49
4.2
600
0.25
0.1
23
+0.090
15.1
MMBZ5257B
33
31.35
34.65
58
3.8
700
0.25
0.1
25
+0.091
13.8
MMBZ5258B
36
34.2
37.8
70
3.4
700
0.25
0.1
27
+0.091
12.6
MMBZ5259B
39
37.05
40.95
80
3.2
800
0.25
0.1
30
+0.092
11.6
NOTE:
1. Tolerance and Type Number Designation. The type numbers listed have a standard tolerance on the nominal zener voltage of ±5%.
2. Specials Available Include:
A. Nominal zener voltages between the voltages shown and tighter voltage tolerances.
B. Matched sets.
3. Zener Voltage (VZ) Measurement. Guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (TL) at 30OC, from the diode body.
4. Zener Impedance (ZZ) Derivation. The zener impedance is derived from the 60 cycle ac voltage, which results when an AC current having an rms value equal to 10% of the dc zener
current (IZT or IZK) is superimposed on IZT or IZK.
5. Surge Current (IR) Non-Repetitive. The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine
wave pulse of 1/120 second duration superimposed on the test current, IZT, per JEDEC registration; however, actual device capability is as described in Figure 5.
GUANGDONG HOTTECH
INDUSTRIAL CO,. LTD.
Page:P3-P2
Plastic-Encapsulate Diodes
MMBZ52XXB series
8
100
TEMPERATURE COEFFICIENT,mV / oC)
TEMPERATURE COEFFICIENT,mV / oC)
7
6
5
4
3
10
2
1
0
-1
-2
-3
2
3
4
5
6
7
8
9
10
11
1
10
12
100
NOMINAL ZENER VOLTAGE, Volts
NOMINAL ZENER VOLTAGE, Volts
TYPICAL REVERSE CURRENT
1000
TJ=25 C
IZ(AC)=0.1IZ(DC)
F=1 kHZ
O
IZ = 1 mA
FORWARD CURRENT, mA
DYNAMIC IMPEDANCE, W
1000
STEADY STATE POWER DERATING
100
5 mA
20 mA
10
100
150OC
10
O
75 C
25OC
1
1
10
1
0.4
100
0.5
0.7
0.8
0.9
1.0
1.1
1.2
FORWARD VOLTAGE, Volts
NORMAL ZENER VOLTAGE, Volts
TYPICAL FORWARD VOLTAGE
EFFECT OF ZENER VOLTAGE ON ZENER IMPEDANCE
1000
1.2
1.0
CAPACITANCE, pF
POWER DISSIPATION, Watts
0.6
O
5C
0.8
0.6
PD V.S. TA
0.4
TA=25oC
0 V BIAS
1 V BIAS
100
BIAS AT
50% OF VZ NOM
10
0.2
0
25
50
75
100
125
150
155
1
1
10
100
o
TEMPERATURE ( C)
NOMINAL ZENER VOLTAGE, Volts
STEADY STATE POWER DERATING
GUANGDONG HOTTECH
TYPICAL CAPACITANCE
INDUSTRIAL CO,. LTD.
Page:P3-P3
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