Transistors SMD Type PNP Transistors H8550 ■ Features 1.70 0.1 ● Collector Power Dissipation: PC=0.5W ● Collector Current: IC=-1.5A ● Comlementary to H8050 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -25 V Emitter-base voltage VEBO -5 V Collector current IC -1.5 A Collector power dissipation PC 0.5 W Junction temperature Tj 150 ℃ Storage temperature Tstg -55 to +150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC= -100μA, IE=0 -40 V Collector-emitter breakdown voltage VCEO IC = -0.1mA, I B=0 -25 V Emitter-base breakdown voltage VEBO IE= -100μA, IC=0 -5 V Collector cut-off current ICBO VCB= -40 V,I E=0 Collector cut-off current ICEO VCE= -20V, I B=0 -0.1 μA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 μA DC current gain hFE -0.1 VCE= -1V, I C= -100mA 85 VCE= -1V, I C = -800mA 40 μA 400 Collector-emitter saturation voltage VCE(sat) IC=-800mA, I B= -80mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800mA, I B=-80mA -1.2 V Base-emitter on voltage VBE(on) Ic=-1V,V CE=-10mA Base-emitter positive favor voltage VBEF IB=-1A output capacitance Cob VCB=-10V,I E =0,f=1MHz Transition frequency fT VCE= -10V, I C=-50mA 100 -1 V -1.55 V 20 pF MHz ■ Classification of hfe(1) Type H8550-B H8550-C H8550-D H8550-D3 Range 85-160 120-200 160-300 300-400 Marking 8550B 8550C 8550D 8550D3 www.kexin.com.cn 1 Transistors SMD Type PNP Transistors H8550 ■ Typical Characteristics -0 .5 -1 000 -0 .4 IB = -2.5mA hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT VCE = -1V IB = -3.0mA IB = -2.0mA -0 .3 IB = -1.5mA -0 .2 IB = -1.0mA -0 .1 -1 00 -1 0 IB = -0.5mA 0 -0 .4 -0 .8 -1.2 -1.6 -1 -0 .1 -2 .0 -1 VCE[V], COLLECTOR-EMITTER VOLTAGE -100 IC = 10 IB V BE(sat) -1000 -100 V CE(sat) -1 VCE = -1V IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE -10000 -10 -0.1 -10 -100 -10 -1 -0 .1 0.0 -1000 -0 .2 -0 .4 -0 .6 -0 .8 -1 .0 -1 .2 VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 1000 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 1000 IE = 0 f = 1MHz 100 10 1 -1000 Figure 2. DC current Gain IC[mA], COLLECTOR CURRENT Cob [pF], CAPACITANCE -100 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic -1 -1 0 VCB [V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance 2 -10 www.kexin.com.cn -1 00 VCE = -10V 100 10 1 -1 -1 0 -1 00 -4 00 IC[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product