NUP2105L Dual Line CAN Bus Protector The NUP2105L has been designed to protect the CAN transceiver in high−speed and fault tolerant networks from ESD and other harmful transient voltage events. This device provides bidirectional protection for each data line with a single compact SOT−23 package, giving the system designer a low cost option for improving system reliability and meeting stringent EMI requirements. Features • • • • • • • • 350 W Peak Power Dissipation per Line (8 x 20 msec Waveform) Low Reverse Leakage Current (< 100 nA) Low Capacitance High−Speed CAN Data Rates IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4 − IEC 61000−4−4 (EFT): 40 A – 5/50 ns − IEC 61000−4−5 (Lighting) 8.0 A (8/20 ms) ISO 7637−1, Nonrepetitive EMI Surge Pulse 2, 9.5 A (1 x 50 ms) ISO 7637−3, Repetitive Electrical Fast Transient (EFT) EMI Surge Pulses, 50 A (5 x 50 ns) Flammability Rating UL 94 V−0 Pb−Free Packages are Available http://onsemi.com SOT−23 DUAL BIDIRECTIONAL VOLTAGE SUPPRESSOR 350 W PEAK POWER PIN 1 PIN 3 PIN 2 CAN_H CAN Transceiver CAN Bus CAN_L NUP2105L Applications MARKING DIAGRAM • Industrial Control Networks ♦ • Smart Distribution Systems (SDS™) DeviceNet™ Automotive Networks ♦ Low and High−Speed CAN ♦ Fault Tolerant CAN ♦ 27EMG G SOT−23 CASE 318 STYLE 27 1 27E = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NUP2105LT1 NUP2105LT1G NUP2105LT3 NUP2105LT3G Package Shipping† SOT−23 3000/Tape & Reel SOT−23 (Pb−Free) 3000/Tape & Reel SOT−23 10000/Tape & Reel SOT−23 (Pb−Free) 10000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 July, 2005 − Rev. 4 1 Publication Order Number: NUP2105L/D NUP2105L MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified) Symbol PPK Rating Value Peak Power Dissipation 8 x 20 ms Double Exponential Waveform (Note 1) Unit W 350 TJ Operating Junction Temperature Range −55 to 150 °C TJ Storage Temperature Range −55 to 150 °C TL Lead Solder Temperature (10 s) 260 °C Human Body model (HBM) Machine Model (MM) IEC 61000−4−2 Specification (Contact) 16 400 30 kV V kV ESD Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Non−repetitive current pulse per Figure 1. ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) Symbol VRWM Parameter Test Conditions Reverse Working Voltage (Note 2) Breakdown Voltage IT = 1 mA (Note 3) IR Reverse Leakage Current VRWM = 24 V VC Clamping Voltage VC VBR Min Typ Max 24 Unit V 26.2 32 V 100 nA IPP = 5 A (8 x 20 ms Waveform) (Note 4) 40 V Clamping Voltage IPP = 8 A (8 x 20 ms Waveform) (Note 4) 44 V IPP Maximum Peak Pulse Current 8 x 20 ms Waveform (Note 4) 8.0 A CJ Capacitance VR = 0 V, f = 1 MHz (Line to GND) 30 pF 15 2. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 3. VBR is measured at pulse test current IT. 4. Pulse waveform per Figure 1. http://onsemi.com 2 NUP2105L TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 12.0 IPP, PEAK PULSE CURRENT (A) % OF PEAK PULSE CURRENT 110 WAVEFORM PARAMETERS tr = 8 ms td = 20 ms 100 90 80 c−t 70 60 td = IPP/2 50 40 30 20 PULSE WAVEFORM 8 x 20 ms per Figure 1 10.0 8.0 6.0 4.0 2.0 10 0 0 10 5 20 15 0.0 30 25 25 30 40 45 Figure 1. Pulse Waveform, 8 × 20 ms Figure 2. Clamping Voltage vs Peak Pulse Current 50 35 f = 1.0 MHz, Line to Ground 45 40 30 125°C 35 25 IT, (mA) 25°C 20 −40°C 30 25°C 25 65°C 20 15 10 15 −55°C 5 10 TA = +150°C 0 0 4 2 6 8 10 20 22 VR, REVERSE VOLTAGE (V) 24 26 28 30 32 34 VBR, VOLTAGE (V) Figure 4. VBR versus IT Characteristics of the NUP2105L Figure 3. Typical Junction Capacitance vs Reverse Voltage 120 25 −55°C +25°C 20 100 TA = +150°C PERCENT DERATING (%) VR, REVERSE BIAS VOLTAGE (V) 50 VC, CLAMPING VOLTAGE (V) t, TIME (ms) C, CAPACITANCE (pF) 35 +65°C 15 10 5 0 0 2 4 6 8 IL, LEAKAGE CURRENT (nA) 10 80 60 40 20 0 −60 12 Figure 5. IR versus Temperature Characteristics of the NUP2105L −30 0 30 60 90 TEMPERATURE (°C) 120 150 180 Figure 6. Temperature Power Dissipation Derating of the NUP2501L http://onsemi.com 3 NUP2105L APPLICATIONS Background ESD. The NUP2105L has been tested to EMI and ESD levels that exceed the specifications of popular high speed CAN networks. The Controller Area Network (CAN) is a serial communication protocol designed for providing reliable high speed data transmission in harsh environments. TVS diodes provide a low cost solution to conducted and radiated Electromagnetic Interference (EMI) and Electrostatic Discharge (ESD) noise problems. The noise immunity level and reliability of CAN transceivers can be easily increased by adding external TVS diodes to prevent transient voltage failures. The NUP2105L provides a transient voltage suppression solution for CAN data communication lines. The NUP2105L is a dual bidirectional TVS device in a compact SOT−23 package. This device is based on Zener technology that optimizes the active area of a PN junction to provide robust protection against transient EMI surge voltage and CAN Physical Layer Requirements Table 1 provides a summary of the system requirements for a CAN transceiver. The ISO 11898−2 physical layer specification forms the baseline for most CAN systems. The transceiver requirements for the Honeywell® Smart Distribution Systems (SDS®) and Rockwell (Allen−Bradley) DeviceNet™ high speed CAN networks are similar to ISO 11898−2. The SDS and DeviceNet transceiver requirements are similar to ISO 11898−2; however, they include minor modifications required in an industrial environment. Table 1. Transceiver Requirements for High−Speed CAN Networks Parameter ISO 11898−2 SDS Physical Layer Specification 2.0 DeviceNet Min / Max Bus Voltage (12 V System) −3.0 V / 16 V 11 V / 25 V Same as ISO 11898−2 Common Mode Bus Voltage CAN_L: Same as ISO 11898−2 Same as ISO 11898−2 −2.0 V (min) 2.5 V (nom) CAN_H: 2.5 V (nom) 7.0 V (max) Transmission Speed 1.0 Mb/s @ 40 m 125 kb/s @ 500 m Same as ISO 11898−2 500 kb/s @ 100 m 125 kb/s @ 500 m ESD Not specified, recommended w $8.0 kV (contact) Not specified, recommended w $8.0 kV (contact) Not specified, recommended w $8.0 kV (contact) EMI Immunity ISO 7637−3, pulses ‘a’ and ‘b’ IEC 61000−4−4 EFT Same as ISO 11898−2 Popular Applications Automotive, Truck, Medical and Marine Systems Industrial Control Systems Industrial Control Systems http://onsemi.com 4 NUP2105L EMI Specifications 61000−4 and ISO 7637 tests are similar; however, the IEC standard was created as a generic test for any electronic system, while the ISO 7637 standard was designed for vehicular applications. The IEC61000−4−4 Electrical Fast Transient (EFT) specification is similar to the ISO 7637−1 pulse 1 and 2 tests and is a requirement of SDS CAN systems. The IEC 61000−4−5 test is used to define the power absorption capacity of a TVS device and long duration voltage transients such as lightning. Table 2 provides a summary of the ISO 7637 and IEC 61000−4−X test specifications. Table 3 provides the NUP2105L’s ESD test results. The EMI protection level provided by the TVS device can be measured using the International Organization for Standardization (ISO) 7637−1 and −3 specifications that are representative of various noise sources. The ISO 7637−1 specification is used to define the susceptibility to coupled transient noise on a 12 V power supply, while ISO 7637−3 defines the noise immunity tests for data lines. The ISO 7637 tests also verify the robustness and reliability of a design by applying the surge voltage for extended durations. The IEC 61000−4−X specifications can also be used to quantify the EMI immunity level of a CAN system. The IEC Table 2. ISO 7637 and IEC 61000−4−X Test Specifications Test Waveform Pulse 1 Test Specifications NUP2105L Test Vs = 0 to −100 V Imax = 10 A Imax = 1.75 A Vclamp_max = 31 V tduration = 5000 pulses tduration = 5000 pulses ISO 7637−1 Vs = 0 to +100 V Imax = 10 A 12 V Power Supply Lines Pulse 2 Imax = 9.5 A Vclamp_max = 33 V tduration = 5000 pulses tduration = 5000 pulses ISO 7637−3 Imax = 50 A Vclamp_max = 40 V tduration = 60 minutes tduration = 10 minutes Vs = +40 V Imax = 0.8 A Pulse ‘b’ DUT in parallel with inductive load that is disconnected from power supply. DUT in series with inductor that is disconnected. Ri = 10 W, tr = 1.0 ms, td_10% = 50 ms, t1 = 2.5 s, t2 = 200 ms Vs = −60 V Imax = 1.2 A Pulse ‘a’ Data Line EFT Ri = 10 W, tr = 1.0 ms, td_10% = 2000 ms, t1 = 2.5 s, t2 = 200 ms, t3 = 100 ms Simulated Noise Source Switching noise of inductive loads. Ri = 50 W, tr = 5.0 ns, td_10% = 0.1 ms, t1 = 100 ms, t2 = 10 ms, t3 = 90 ms tduration = 10 minutes Vopen circuit = 2.0 kV Ishort circuit = 40 A (Level 4 = Severe Industrial Environment) IEC 61000−4−4 (Note 2) Switching noise of inductive loads. Ri = 50 W, tr < 5.0 ns, td_50% = 50 ns, tburst = 15 ms, fburst = 2.0 to 5.0 kHz, trepeat = 300 ms tduration = 1 minute Data Line EFT Vopen circuit = 1.2 x 50 ms, Ishort circuit = 8 x 20 ms IEC 61000−4−5 Lightning, nonrepetitive power line and load switching Ri = 50 W 1. DUT = device under test. 2. The EFT immunity level was measured with test limits beyond the IEC 61000−4−4 test, but with the more severe test conditions of ISO 7637−3. Table 3. NUP2105L ESD Test Results ESD Specification Human Body Model IEC 61000−4−2 Test Test Level Pass / Fail Contact 16 kV Pass Contact 30 kV (Note 3) Pass Non−contact (Air Discharge) 30 kV (Note 3) Pass 3. Test equipment maximum test voltage is 30 kV. http://onsemi.com 5 NUP2105L TVS Diode Protection Circuit voltage of the diode that is reversed biased, plus the diode drop of the second diode that is forwarded biased. TVS diodes provide protection to a transceiver by clamping a surge voltage to a safe level. TVS diodes have high impedance below and low impedance above their breakdown voltage. A TVS Zener diode has its junction optimized to absorb the high peak energy of a transient event, while a standard Zener diode is designed and specified to clamp a steady state voltage. Figure 7 provides an example of a dual bidirectional TVS diode array that can be used for protection with the high−speed CAN network. The bidirectional array is created from four identical Zener TVS diodes. The clamping voltage of the composite device is equal to the breakdown CAN_H CAN Transceiver CAN_L CAN Bus NUP2105L Figure 7. High−Speed and Fault Tolerant CAN TVS Protection Circuit http://onsemi.com 6 NUP2105L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D 3 1 E HE 2 DIM A A1 b c D E e L HE e A b A1 C L MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.54 0.69 2.40 2.64 STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.029 0.104 NUP2105L Honeywell and SDS are registered trademarks of Honeywell International Inc. DeviceNet is a trademark of Rockwell Automation. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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