Spec. No. : C705Q8 Issued Date : 2017.01.11 Revised Date : 2017.01.13 Page No. : 1/12 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTNN6904Q8 FET1 40V 8.7A 11.7mΩ 15.5mΩ BVDSS ID@TA=25°C, VGS=10V RDSON(TYP.)@VGS=10V RDSON(TYP.)@VGS=4.5V FET 2 40V 10.3A 7.4mΩ 9.2mΩ Features • Simple drive requirement • Low on-resistance • Fast switching speed • Two N-ch MOSFETs in a package • Pb-free lead plating package Equivalent Circuit Outline SOP-8 MTNN6904Q8 D2 D2 D1 D1 G：Gate S：Source D：Drain Pin 1 S1 G1 S2 G2 Ordering Information Device Package Shipping MTNN6904Q8-0-T3-G SOP-8 (Pb-free lead plating & halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTNN6904Q8 CYStek Product Specification Spec. No. : C705Q8 Issued Date : 2017.01.11 Revised Date : 2017.01.13 Page No. : 2/12 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits N-CH 1 N-CH 2 Drain-Source Voltage VDS 40 40 Gate-Source Voltage VGS ±20 ±20 8.7 10.3 7.0 8.2 40 40 Continuous Drain Current @ TA=25 °C, VGS=10V (Note 1) ID Continuous Drain Current @ TA=70 °C, VGS=10V (Note 1) Pulsed Drain Current (Note 2&3) IDM Total Power Dissipation @ TA=25 °C Linear Derating Factor PD Operating Junction and Storage Temperature Range Unit V A 2 W 0.016 W / °C Tj ; Tstg -55~+150 °C Symbol RθJA Value 20 62.5 (Note 1) 114 (Note 4) Unit Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max RθJC °C/W Note : 1. Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s; 135°C/W when mounted on minimum copper pad. 2. Pulse width limited by maximum junction temperature. 3. Pulse width≤300μs, duty cycle≤2%. 4. Surface mounted on minimum copper pad, pulse width≤10s. Characteristics (Tj=25°C, unless otherwise specified) N-Channel MOSFET 1 Symbol Static BVDSS VGS(th) GFS IGSS IDSS *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf MTNN6904Q8 Min. Typ. Max. 40 1.0 - 10 11.7 15.5 2.5 ±100 1 25 16 21 - 13.8 2.5 2.6 7.8 14.4 27.4 8.8 - Unit V S nA μA mΩ Test Conditions VGS=0V, ID=250μA VDS = VGS, ID=250μA VDS =10V, ID=5A VGS=±20V VDS =32V, VGS =0V VDS =32V, VGS =0V, Tj=85°C VGS =10V, ID=8A VGS =4.5V, ID=6A nC ID=8A, VDS=20V, VGS=10V ns VDS=20V, ID=8A,VGS=10V, RG=1Ω CYStek Product Specification CYStech Electronics Corp. Ciss Coss Crss Rg Source-Drain Diode *IS *ISM *VSD *trr *Qrr - 656 97 46 2.8 - - 0.72 10.5 4.5 2.3 9.2 1 - V ns nC Min. Typ. Max. Unit 40 1 - 10 7.4 9.2 2.5 ±100 1 25 10.5 12.5 32.5 4.8 7.5 12.6 16.8 46.8 8.4 1438 168 124 2 - 0.71 14.3 7.4 2.3 9.2 1 - Spec. No. : C705Q8 Issued Date : 2017.01.11 Revised Date : 2017.01.13 Page No. : 3/12 pF VGS=0V, VDS=30V, f=1MHz Ω f=1MHz A IS=1A, VGS=0V IF=1A, dIF/dt=100A/μs N-Channel MOSFET 2 Symbol Static BVDSS VGS(th) GFS IGSS IDSS RDS(ON)* Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Rg Source-Drain Diode *IS *ISM *VSD *trr *Qrr - V S nA μA mΩ Test Conditions VGS=0V, ID=250μA VDS=VGS, ID=250μA VDS =10V, ID=5A VGS=±20V VDS =32V, VGS =0V VDS =32V, VGS =0V, Tj=85°C VGS =10V, ID=10A VGS =4.5V, ID=8A nC ID=10A, VDS=20V, VGS=10V ns VDS=20V, ID=10A,VGS=10V, RG=1Ω pF VDS=30V, VGS=0V, f=1MHz Ω f=1MHz A V ns nC IS=1A, VGS=0V IF=1A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTNN6904Q8 CYStek Product Specification CYStech Electronics Corp. N-CH MOSFET 1, Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 36 BVDSS, Normalized Drain-Source Breakdown Voltage 40 10V, 9V, 8V, 7V, 6V, 5V, 4V ID, Drain Current (A) 32 28 24 VGS=3.5V 20 16 12 8 1.2 1 0.8 ID=250μA, VGS=0V VGS=3V 4 0.6 0 0 1 2 3 4 5 6 7 8 VDS, Drain-Source Voltage(V) 9 -75 -50 -25 10 100 1.2 VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current VGS=4.5V 10 VGS=10V VGS=0V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 1 0.01 0.1 1 10 ID, Drain Current(A) 0 100 2 4 6 8 IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.4 R DS(on), Normalized Static DrainSource On-State Resistance 150 R DS(on), Static Drain-Source OnState Resistance(mΩ) Spec. No. : C705Q8 Issued Date : 2017.01.11 Revised Date : 2017.01.13 Page No. : 4/12 ID=8A 120 90 60 30 2 VGS=10V, ID=8A RDSON@Tj=25°C : 11.7 mΩ typ. 1.6 1.2 0.8 0.4 0 0 0 MTNN6904Q8 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C705Q8 Issued Date : 2017.01.11 Revised Date : 2017.01.13 Page No. : 5/12 CYStech Electronics Corp. N-CH MOSFET 1, Typical Characteristics (Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage Capacitance---(pF) 10000 Ciss 1000 C oss 100 Crss 1.4 1.2 ID=1mA 1 0.8 ID=250μA 0.6 0.4 10 0 5 10 15 20 25 VDS, Drain-Source Voltage(V) -75 -50 -25 30 50 75 100 125 150 175 Gate Charge Characteristics 10 10 VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 25 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current 1 0.1 VDS=10V Pulsed Ta=25°C 0.01 0.001 8 0.01 0.1 1 ID, Drain Current(A) 2 ID=8A 0 10 100μs 1ms 100ms TA=25°C, Tj=150°C VGS=10V, RθJA=62.5°C/W Single Pulse DC ID, Maximum Drain Current(A) RDSON Limited 1s 10 8 6 4 TA=25°C VGS=10V RθJA=62.5°C/W 2 0 0.01 MTNN6904Q8 16 12 1 0.01 4 8 12 Qg, Total Gate Charge(nC) Maximum Drain Current vs Junction Temperature 10ms 0.1 VDS=30V 4 0 100 10 VDS=20V 6 Maximum Safe Operating Area ID, Drain Current(A) 0 0.1 1 10 VDS, Drain-Source Voltage(V) 100 25 50 75 100 125 150 Tj, Junction Temperature(°C) 175 CYStek Product Specification Spec. No. : C705Q8 Issued Date : 2017.01.11 Revised Date : 2017.01.13 Page No. : 6/12 CYStech Electronics Corp. N-CH MOSFET 1, Typical Characteristics (Cont.) Typical Transfer Characteristics 40 1000 Single Pulse Power Rating, Junction to Ambient (Note on page 2) VDS=10V 36 TJ(MAX) =150°C TA=25°C RθJA=62.5°C/W 28 Power (W) ID, Drain Current(A) 32 24 20 16 100 10 12 8 4 0 0 1 2 3 VGS, Gate-Source Voltage(V) 4 5 1 0.0001 0.001 0.01 0.1 1 Pulse Width(s) 10 100 1000 Transient Thermal Response Curves r(t), Normalized Transient Thermal Resistance 1 D=0.5 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM -TA=PDM *RθJA(t) 4.RθJA=62.5°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTNN6904Q8 CYStek Product Specification CYStech Electronics Corp. N-CH MOSFET 2, Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 BVDSS, Normalized Drain-Source Breakdown Voltage 40 35 ID, Drain Current (A) Spec. No. : C705Q8 Issued Date : 2017.01.11 Revised Date : 2017.01.13 Page No. : 7/12 30 10V, 9V, 8V, 7V, 6V, 5V, 4V, 3.5V 25 20 15 10 VGS=3V 1.2 1 0.8 ID=250μA, VGS=0V 5 0.6 0 0 1 2 3 4 5 6 7 8 VDS, Drain-Source Voltage(V) 9 -75 -50 -25 10 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.2 VGS=0V VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 100 VGS=4.5V 10 VGS=10V 1 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 0.01 0.1 1 10 -ID, Drain Current(A) 0 100 2 4 6 IDR, Reverse Drain Current(A) 8 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.4 R DS(on), Normalized Static DrainSource On-State Resistance 150 R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=10A 120 90 60 30 2 VGS=10V, ID=10A RDSON@Tj=25°C : 7.4mΩ typ. 1.6 1.2 0.8 0.4 0 0 0 MTNN6904Q8 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C705Q8 Issued Date : 2017.01.11 Revised Date : 2017.01.13 Page No. : 8/12 CYStech Electronics Corp. N-CH MOSFET 2, Typical Characteristics (Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss Crss 1.6 1.4 1.2 ID=1mA 1 0.8 0.6 ID=250μA 0.4 100 0 5 10 15 20 25 VDS, Drain-Source Voltage(V) -75 -50 -25 30 50 75 100 125 150 175 Gate Charge Characteristics 100 10 -VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 25 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current 10 1 VDS=10V Pulsed Ta=25°C 0.1 0.01 0.001 8 VDS=20V 6 VDS=30V 4 2 ID=10A 0 0.01 0.1 1 -ID, Drain Current(A) 0 10 1ms 10ms 1 100ms 1s TA=25°C, Tj=150°C VGS=10V, RθJA=62.5°C/W Single Pulse DC ID, Maximum Drain Current(A) 100μs 10 20 25 30 35 40 10 8 6 4 TA=25°C VGS=10V RθJA=62.5°C/W 2 0 0.01 MTNN6904Q8 15 12 RDSON Limited 0.01 10 Maximum Drain Current vs Junction Temperature 100 0.1 5 Qg, Total Gate Charge(nC) Maximum Safe Operating Area ID, Drain Current(A) 0 0.1 1 10 VDS, Drain-Source Voltage(V) 100 25 50 75 100 125 Tj, Junction Temperature(°C) 150 175 CYStek Product Specification Spec. No. : C705Q8 Issued Date : 2017.01.11 Revised Date : 2017.01.13 Page No. : 9/12 CYStech Electronics Corp. N-CH MOSFET 2, Typical Characteristics (Cont.) Typical Transfer Characteristics 40 1000 Single Pulse Power Rating, Junction to Ambient (Note on page 2) VDS=10V 35 TJ(MAX) =150°C TA=25°C RθJA=62.5°C/W Power (W) ID, Drain Current(A) 30 25 20 15 100 10 10 5 0 0 1 2 3 VGS, Gate-Source Voltage(V) 4 5 1 0.0001 0.001 0.01 0.1 1 Pulse Width(s) 10 100 1000 Transient Thermal Response Curves r(t), Normalized Transient Thermal Resistance 1 D=0.5 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM -TA=PDM *RθJA(t) 4.RθJA=62.5°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTNN6904Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C705Q8 Issued Date : 2017.01.11 Revised Date : 2017.01.13 Page No. : 10/12 Reel Dimension Carrier Tape Dimension MTNN6904Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C705Q8 Issued Date : 2017.01.11 Revised Date : 2017.01.13 Page No. : 11/12 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTNN6904Q8 CYStek Product Specification Spec. No. : C705Q8 Issued Date : 2017.01.11 Revised Date : 2017.01.13 Page No. : 12/12 CYStech Electronics Corp. SOP-8 Dimension Marking: Device Name Date Code 6904 □□□□ Date Code(counting from left to right) : 1st code: year code, the last digit of Christian year 2nd code : month code, Jan→A, Feb→B, Mar→C, Apr→D May→E, Jun→F, Jul→G, Aug→H, Sep→J, Oct→K, Nov→L, Dec→M 3rd and 4th codes : prodcution serial number, 01~99 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Millimeters Min. Max. 1.350 1.750 0.100 0.250 1.350 1.550 0.330 0.510 0.170 0.250 4.700 5.100 DIM A A1 A2 b c D Inches Min. Max. 0.053 0.069 0.004 0.010 0.053 0.061 0.013 0.020 0.006 0.010 0.185 0.200 DIM E E1 e L θ Millimeters Min. Max. 3.800 4.000 5.800 6.200 1.270 (BSC) 0.400 1.270 8° 0 Inches Min. Max. 0.150 0.157 0.228 0.244 0.050 (BSC) 0.016 0.050 8° 0 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTNN6904Q8 CYStek Product Specification